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3. Thin-film polycrystalline silicon solar cells formed by diode laser crystallisation.

Author

Dore, Jonathon, Evans, Rhett, Schubert, Ute, Eggleston, Bonne D., Ong, Daniel, Kim, Kyung, Huang, Jialiang, Kunz, Oliver, Keevers, Mark, Egan, Renate, Varlamov, Sergey, and Green, Martin A.

Subjects
POLYCRYSTALLINE silicon, SILICON films, THICKNESS measurement, SEMICONDUCTOR lasers, CRYSTALLIZATION, SILICON oxide, OPEN-circuit voltage
Abstract

ABSTRACT Polycrystalline silicon films of 10 μm thickness are formed on glass in a single-step continuous wave diode laser crystallisation process, creating large crystal grains up to 1 mm wide and 10 mm long. Solar cells are formed on the layers by employing a rear point contacting scheme. Intermediate layers between the glass and the silicon are shown to heavily influence the cell characteristics. A stack of silicon oxide/silicon nitride/silicon oxide has produced the best cell efficiency so far of 8.4 % with open-circuit voltage of 557 mV. With simple optimisation of the contacting scheme, 10 % efficient cells are expected in the near future. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Published
2013
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