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16 results on '"European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010)"'

1. Improved ohmic contacts for SiC nanowire devices with nickel-silicide

Author

Dae-Young Jeon, Maelig Ollivier, Laurence Latu-Romain, Francesca Rossi, Min-Kyu Joo, Ji-Hoon Choi, Louis Fradetal, Giovanni Attolini, Edwige Bano, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), School of Electrical Engineering [Korea University], Korea University [Seoul], Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Istituto dei Materiali per l'Elettronica ed il Magnetismo [Genova] (IMEM-CNR), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Consiglio Nazionale delle Ricerche (CNR)

Subjects
Materials science, Annealing (metallurgy), Nanowire, 02 engineering and technology, 01 natural sciences, Diffusion, chemistry.chemical_compound, 0103 physical sciences, Silicide, Materials Chemistry, Silicon carbide, Ohmic contact, 010302 applied physics, business.industry, Mechanical Engineering, Metals and Alloys, Heterojunction, Nanostructured materials, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Electrical transport, Semiconductor, Semiconductors, chemistry, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business, Current density
Abstract

International audience; The effect of annealing temperature has been investigated to obtain a low ohmic contact for silicon carbide nanowire field-effect transistor (SiC NW FET). Fabrication of two types of SiC NW FET has been studied using cylinder and needle shapes of SiC NW. The experimental results show that an annealing temperature of 650 °C leads to the lowest ohmic contact resistance on SiC NW FET. It is believed that the Ni silicide phases formed on SiC NWs make low resistance ohmic contacts. Ni silicide phases begin to intrude into the SiC NW channel after an annealing step at 700 °C for 30 s and consequently, it forms either a SiC/Ni silicide heterostructure or a fully Ni silicidized SiC NW depending on the channel length. A fully silicidized SiC NW exhibits a low channel resistance (740 Ω) and a high current density (1.46 × 107 A cm−2 at 1.4 V). The needle shape of SiC NWs is transformed into a bead necklace like morphology after Ni silicide intrusion.

Published
2015
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2. Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015)

Author

Sylvain David, C. Pascal, Pauline Serre, Jean-Michel Missiaen, Céline Ternon, Jean-Marie Lebrun, Thierry Baron, Thierry Luciani, Virginie Brouzet, Maxime Legallais, Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, nanonets, [PHYS]Physics [physics], sintering, Materials science, NW–NW junctions, Nanowire, Sintering, Nanotechnology, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Electrical contacts, Electronic, Optical and Magnetic Materials, Si nanowires, 0103 physical sciences, electrical properties, 0210 nano-technology, Silicon nanowires
Abstract

International audience; The development of functional devices compatible with standard microelectronic processes is central to the More‐than‐Moore and Beyond‐CMOS (complementary metal oxide semiconductor) electronic fields. Devices based on nanowires (NWs) are very promising, but their integration remains complex and submitted to variability limiting the potential scalability. The field of flexible electronics is another one in which the standard microelectronic industry struggles to propose a solution. Despite tremendous progress, organic materials remain highly sensitive to oxygen and humidity and deteriorate under UV irradiation, thus limiting their long‐term operation. Here, it is shown that Si NW networks, also called Si nanonets, provide an easy‐to‐process single answer to develop flexible electronics and NW‐based devices. As a major contribution to the state of the art, it is demonstrated that stable Si NW–NW junctions, insensitive to oxidation, can be formed with low variability, which opens up a new route to form reproducible and reliable devices, with long‐term performances, presumably over several years, for NW‐based or flexible devices using Si as active element.

Published
2015
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3. (Invited) Challenges to Nano-Scale Device World

Author

Francis Balestra, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), European Project: 216171,EC:FP7:ICT,FP7-ICT-2007-1,NANOSIL(2008), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Y. Omura, J.A. Martino, J.P. Raskin, S. Selberherr, H. Ishi, F. Gamiz and B. Nguye, and Ducroquet, Frédérique

Subjects
Engineering, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0502 economics and business, 05 social sciences, Hardware_INTEGRATEDCIRCUITS, Nanotechnology, 050207 economics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, 7. Clean energy, Nanoscopic scale
Abstract

The historic trend in micro/nano-electronics these last 40 years has been to increase both speed and density by scaling down the electronic devices, together with reduced energy dissipation per binary transition, and to develop many novel functionalities for future electronic systems. We are facing today dramatic challenges for More Moore and More than more applications: substantial increase of energy consumption and heating which can jeopardize future IC integration and performance, reduced performance due to limitation in traditional high conductivity metal/low k dielectric interconnects, limit of optical lithography, heterogeneous integration of new functionalities for futures nanosystems, etc. [1-16]. Therefore many breakthroughs, disruptive technologies, novel materials, and innovative devices are needed in the next two decades. With respect to the substantial reduction of the static and dynamic power of future high performance/ultra low power terascale integration and autonomous nanosystems, new materials and novel device architectures are mandatory for ultimate CMOS and beyond-CMOS eras, as well as new circuit design techniques, architectures and embedded softwares. Alternative memories, especially PCRAM, RRAM or MRAM will be useful for pushing the limit of integration and performance beyond to those afforded by present Non-Volatile, DRAM and SRAM memories. In the interconnect area, optical and RF interconnects, carbon or other 2D materials can overcome the present limitations of copper interconnects. Concerning ultimate processing technologies, EUV lithography, immersion multiple patterning, multi ebeam maskless or imprint lithography, as well as self-assembly of nanodevices could be used for different applications. Future autonomous nanosystems will also need the development of nanoscale high performance novel functionalities, which could be integrated on CMOS platforms. In this respect, nanostructures and nanodevices, especially nanowires, are of great interest for instance for improving the sensitivity, resolution, selectivity, energy consumption and response time of nanosensors, and for solar, mechanical and thermal energy harvesting. Parallel or sequential processes could be used for the integration of these future high performance sustainable, secure, ubiquitous and pervasive systems, which will be of high added value for many applications in the field of detection and communication of health problems, environment quality and security, secure transport, building and industrial monitoring, entertainment, education, etc. The talk will focus on the main trends, challenges, limits and possible solutions for future high performance and ultralow power nanoscale devices in the CMOS and Beyond CMOS arena, including ultra-thin films, multi-gates, nanowires and small slope switches. References 1. F. Balestra, Nanoscale CMOS: Innovative Materials, Modeling and Characterization, Francis Balestra Ed., ISTE-Wiley, 2010 2. F. Balestra, Beyond CMOS Nanodevices (Vol. 1 and 2), Francis Balestra Ed., ISTE-Wiley, 2014 3. F. Balestra et al, IEEE Electron Device Letters EDL-8, p. 410, 1987 4. C. Hu et al, VLSI 2008, p. 14 5. M. Luisier et al, IEEE EDL 30, p. 602, 2009 6. F. Conzatti et al, IEDM 2011, p. 95 7. G. Dewey et al, IEDM 2011, p. 785 8. J. Appenzeller et al, Phys. Rev. Lett. 93, 196805, 2004 9. F. Padilla et al, IEDM 2008, p. 171 10. K. Boucart et al, ESSDERC 2009, p. 452 11. F. Mayer et al, IEDM 2008, p. 16 12. D. Esseni et al, IEEE TED 60, p. 2802, 2013 13. S. Brocard et al, IEDM 2013, p. 5.4.1 14. M.H. Lee, IEDM 2013, p. 104 15. S. Brocard et al, IEEE-EDL 2, p. 184, 2014 16. M. Pala et al, J. Elec. Dev. Soc., 2014. Acknowledgements: The author would like to thank the Sinano Institute Members and Partners of Nanosil and Nanofunction FP7 European Networks of Excellence.

Published
2015
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4. Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy

Author

Vincent Consonni, Mauro Zanuccoli, Mireille Mouis, Ronan Hinchet, Laurent Montès, Claudio Fiegna, Alessandro Cresti, Mehdi Daanoune, Anne Kaminski-Cachopo, Gustavo Ardila, Jérôme Michallon, Marco G. Pala, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Department of electrical, electronic and information engineering 'GUGLIELMO MARCONI' [Bologna] (DEI), Alma Mater Studiorum Università di Bologna [Bologna] (UNIBO), A. Nazarov, F. Balestra, V. Kilchytska, D. Flandre, European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Nazarov, A., Balestra, F., Valeriya, K., Flandre, D., Gustavo, Ardila, Anne Kaminski Cachopo, Marco, Pala, Alessandro, Cresti, Laurent, Montè, Vincent, Consonni, Ronan, Hinchet, Jérôme, Michallon, Mehdi, Daanoune, Zanuccoli, Mauro, Fiegna, Claudio, Mireille, Mouis, Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
energy harvesting, Materials science, Nanostructure, Nanowire, 02 engineering and technology, 7. Clean energy, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], law, sensor, 0103 physical sciences, Solar cell, Vapor–liquid–solid method, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Energy conversion efficiency, 021001 nanoscience & nanotechnology, Engineering physics, solar cell, nanowires, nanomaterial, 0210 nano-technology, business, Energy harvesting, Energy (signal processing), Thermal energy
Abstract

In this chapter, we present the advantages of semiconducting nanostructures (nanowires) for energy harvesting applications. Three sources of energy are considered: mechanical inputs, light and thermal energy. Different simulation approaches are used to discuss the prospects of these energy transduction solutions at nanoscale. Some guidelines are brought out for the improvement of energy conversion efficiency by nanowires, when integrated into functional devices.

Published
2014
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5. Enhanced coupling effects in vertical double-gate FinFETs

Author

Sorin Cristoloveanu, Kerem Akarvardar, I. Ionica, Jong-Hyun Lee, Fanyu Liu, S.-J. Chang, Maryline Bawedin, Jung-Hee Lee, Yufeng Guo, Department of Electrical Engineering [Yale University], Yale University [New Haven], Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Nanjing University of Posts and Telecommunications [Nanjing] (NJUPT), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Kyungpook National University [Daegu], ANR-11-JS03-0001,AMNESIA,Dispositifs Mémoires Nanométriques Innovants pour Applications Ultra Basse Consommation(2011), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Kyungpook National University [Daegu] (KNU)

Subjects
Electron mobility, Materials science, Silicon on insulator, 02 engineering and technology, 01 natural sciences, Fin (extended surface), Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Electronic engineering, Wafer, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Coupling Back-bias scheme Model, 010302 applied physics, Coupling, Double-gate SOI, business.industry, 020208 electrical & electronic engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, FinFET, Optoelectronics, Double gate, Poisson's equation, business
Abstract

International audience; Vertical double-gate (DG) FinFETs fabricated on SOI wafers show good gate control, reasonable threshold voltage and high carrier mobility despite the absence of the top-gate. The 3D coupling effect between the two lateral-gates and the back-gate is investigated based on experimental and simulation results. We compare DG and triple-gate FinFETs with various fin widths. Front-channel characteristics are easily tuned by applied bias at the back-gate if the fin is not too narrow. We highlight that vertical DG FinFET is more appropriate device for dynamic threshold voltage adjustment than triple-gate FinFET. An analytical model is proposed to quantify the coupling effect in DG FinFET by solving 2D Poisson equation. The body potential profile and coupling effect are modeled. A very good agreement is obtained between experiments, 3D simulations and the proposed model.

Published
2014
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6. Light trapping in ZnO nanowire arrays covered with an absorbing shell for solar cells

Author

Mauro Zanuccoli, Anne Kaminski-Cachopo, Jérôme Michallon, Alain Morand, Davide Bucci, Vincent Consonni, Jerome Michallon, Davide Bucci, Alain Morand, Mauro Zanuccoli, Vincent Consonni, Anne Kaminski-Cachopo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Diffraction, Materials science, business.industry, Nanowire, SOLAR CELLS, Physics::Optics, [CHIM.MATE]Chemical Sciences/Material chemistry, NANOWIRES, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 7. Clean energy, Ray, Atomic and Molecular Physics, and Optics, Wavelength, Condensed Matter::Materials Science, Optics, Absorptance, Optoelectronics, NUMERICAL SIMULATION, Absorption (electromagnetic radiation), business, Rigorous coupled-wave analysis, Refractive index
Abstract

International audience; The absorption properties of ZnO nanowire arrays covered with a semiconducting absorbing shell for extremely thin absorber solar cells are theoretically investigated by optical computations of the ideal short-circuit current density with three-dimensional rigorous coupled wave analysis. The effects of nanowire geometrical dimensions on the light trapping and absorption properties are reported through a comprehensive optical mode analysis. It is shown that the high absorptance of these heterostructures is driven by two different regimes originating from the combination of individual nanowire effects and nanowire arrangement effects. In the short wavelength regime, the absorptance is likely dominated by optical modes efficiently coupled with the incident light and interacting with the nearby nanowires (i.e. diffraction), induced by the period of core shell ZnO nanowire arrays. In contrast, in the long wavelength regime, the absorptance is governed by key optically guided modes, related to the diameter of individual core shell ZnO nanowires.

Published
2014
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7. Progress on the modelling of piezoelectric nanogenerators

Author

G., Ardila, Tao, Ran, Hinchet, R., Laurent, Montès, M., Mouis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), SMINGUE (UJF), Georgia Institute of Technology, ANR-12-JS10-0003,COSCOF,Nanofils coeur de semiconducteur / coquille d'oxyde fonctionnel(2012), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Mouis, Mireille, Jeunes Chercheuses et Jeunes Chercheurs - Nanofils coeur de semiconducteur / coquille d'oxyde fonctionnel - - COSCOF2012 - ANR-12-JS10-0003 - JC - VALID, Beyond CMOS Nanodevices for Adding Functionalities to CMOS - NANOFUNCTION - - ICT2010-08-31 - 2013-08-31 - 257375 - VALID, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
TheoryofComputation_MISCELLANEOUS, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, GeneralLiterature_MISCELLANEOUS, ComputingMilieux_MISCELLANEOUS
Abstract

session : Nanogenerators (Invited); International audience

Published
2014

8. Vibrational Energy Harvesting

Author

Ronan Hinchet, Alessandro Bertacchini, Dhiman Mallick, Francesco Guido, Teresa Todaro, Saibal Roy, Gustavo Ardila, Massimo De Vittorio, Julien Keraudy, Pranay Podder, Luca Larcher, Dipartimento di Scienze e Metodi dell'Ingegneria [Reggio Emilia] (DISMI), Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia (UNIMORE), Tyndall National Institute [Cork], Istituto Nanoscienze [Lecce] (NNL), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Università degli Studi di Roma 'La Sapienza' = Sapienza University [Rome] (UNIROMA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), F. Balestra, European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Università degli Studi di Modena e Reggio Emilia (UNIMORE), Consiglio Nazionale delle Ricerche (CNR), Università degli Studi di Roma 'La Sapienza' = Sapienza University [Rome], Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), and Université de Nantes (UN)-Université de Nantes (UN)

Subjects
010302 applied physics, Microelectromechanical systems, energy harvesting, Computer science, Mechanical engineering, 02 engineering and technology, Transduction (psychology), 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Piezoelectricity, Computer Science::Other, Vibration, Modeling and simulation, MEMS, Transducer, 0103 physical sciences, energy harvesting, MEMS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Energy harvesting, Energy (signal processing)
Abstract

chap 6; International audience; Vibration‐powered generators are typically inertial spring and mass systems which employ three main transduction mechanisms to extract energy from vibrations: piezoelectric, electromagnetic and electrostatic. This chapter presents a short overview of the microelectromechanical systems (MEMS) energy harvesters employing both piezoelectric and electromagnetic effects both proposed in the literature and developed in the framework of the Nanofunction project. It presents a short overview of state‐of‐the‐art vibration energy transducers employing the piezoelectric effect. The chapter illustrates the near‐field characterization techniques as well as electromechanical modeling and simulation required for the design of the energy harvesting transducers. It reviews the electromagnetic generators presented in the literature including large‐scale discrete devices and integrated versions, where the results achieved on vibration energy harvester exploiting both electromagnetic and piezoelectric effects are derived. Modeling and simulation results are presented to demonstrate the feasibility of the proposed device concepts.

Published
2014
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9. Small slope switching

Author

M. Ionescu, Adrian, Balestra, Francis, Boucart, Kathy, Salvatore, Giovanni, Rusu, Alexandru, Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), F. Balestra, and European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

chap 1; International audience; Power dissipation in switching devices is considered today as the most important roadblock for future nanoelectronic circuits and systems. The complementary metal‐oxide‐semiconductor (CMOS) power consumption consists of two contributions: the dynamic and the static leakage components. The tunnel metal‐oxide‐semiconductor field‐effect transistor (MOSFET) offers an appealing concept for a substantial lowering of the energy dissipated in a switching device by replacing the thermionic emission of charge carriers over a barrier to enter the MOSFET channel with a tunneling process. If the tunneling process is made sufficiently effective, tunnel FETs can ultimately yield an effective cooling of the injecting source contact through a band‐pass filter action that enables steep inverse subthreshold slopes over many orders of magnitude, thus providing low values of the average subthreshold swing. This chapter focuses on the characteristics of metal‐ferroelectric‐MOS structures recently reported by EPFL group based on a complete set of experiments exploiting the internal metal contact.

Published
2014
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10. Metal Nanolines and Antennas for RF and mm‐Wave Applications

Author

Panagiotis Sarafis, Androula G. Nassiopoulou, Gustavo Ardila, Chuan-Lun Hsu, Philippe Benech, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), National Center for Scientific Research 'Demokritos' (NCSR), Ed. by F. Balestra, European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, business.industry, 020206 networking & telecommunications, 02 engineering and technology, 01 natural sciences, Metal, visual_art, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, visual_art.visual_art_medium, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

chap 14; International audience; Nanotubes and metal nanowires (nanolines) are expected to play an important role as high‐frequency interconnects in future nanoelectronics, for transmitting signals between nano‐components and connecting the nano‐devices. Additionally, in wireless communications, nano‐antennas based on nanotubes and nanowires can be investigated for use in connecting nanoelectronic devices to the macroscopic world and making potential high‐density circuitry possible. The on‐chip transmission lines for silicon monolithic‐integrated millimeter‐wave (mm‐wave) circuits are made of metals like copper and aluminum. Their line width and thickness is not less than 1 μm in the most advanced back‐end‐of‐line (BEOL) CMOS technology for RF and mm‐wave applications, thereby ensuring a low insertion loss and a good impedance matching. This chapter describes some recent advances, performed within the EU FP7 NoENanofunction network of excellence. It focuses on nanolines that are horizontal to the Si wafer surface, the fabrication description is limited to the first case of metal deposition and patterning.

Published
2014
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11. Beyond CMOS Nanodevices 2

Author

Balestra, Francis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), M. Mouis, European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Hardware_MEMORYSTRUCTURES, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Hardware_LOGICDESIGN
Abstract

International audience; This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Published
2014
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12. Performance optimization of vertical Nanowire based Piezoelectric Nanogenerators

Author

Mireille Mouis, Gustavo Ardila, Laurent Montès, Zhong Lin Wang, Sangmin Lee, Ronan Hinchet, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta], Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences [Beijing] (CAS), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, piezoelectric nanowires, business.industry, Electric potential energy, nanogenerators, Nanowire, Nanogenerator, Nanotechnology, Condensed Matter Physics, mechanical energy harvesting, 7. Clean energy, Capacitance, Piezoelectricity, Finite element method, Electronic, Optical and Magnetic Materials, Biomaterials, Electrochemistry, Optoelectronics, Sensitivity (control systems), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, piezoelectric nanocomposites, Mechanical energy
Abstract

International audience; The integrated nanogenerator (NG) based on vertical nanowire (NW) arrays is one of the dominant designs developed to harvest mechanical energy using piezoelectric nanostructures. Finite element method (FEM) simulations of such a NG are developed using ZnO NWs in compression mode to evaluate its performances in term of piezoelectric potential generated, capacitance, induced mechanical energy, output electrical energy, and efficiency. This evaluation is essential to correctly understand NG operation. Three main issues are highlighted. The mechanical and electrical structures of the NG as an integrated system are optimized, and strategies for concentrating the mechanical strain field in the NWs and increasing the force sensitivity are developed. In addition, the influence of NWs length and diameter on NG performances is investigated. The optimization results in a piezoelectric nano composite material where global performances are improved by mean of long and thin NWs.

Published
2014
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13. Ultrathin Nanogenerators as Self-Powered/Active Skin Sensors for Tracking Eye Ball Motion

Author

Ya Yang, Zhong Lin Wang, Gustavo Ardila, Mireille Mouis, Ronan Hinchet, Laurent Montès, Zong-Hong Lin, Yean Lee, Sangmin Lee, School of Materials Science and Engineering, Georgia Institute of Technology [Atlanta], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Department of Mechanical Engineering, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences [Beijing] (CAS), Airforce, U.S. Department of Energy, Office of Basic Energy Sciences (Award DE-FG02-07ER46394), NSF (0946418), MANA, National Institute For Materials, Japan, Sungkyunkwan University, Korea, Innovation Program of the Chinese Academy of Science (Grant No. KJCX2-YW-M13). Region Rhone-Alpes (RH). European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement NANOFUNCTION No.257375, European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
self-powered systems, Materials science, business.industry, Anodizing, Nanowire, Nanogenerator, Nanotechnology, Condensed Matter Physics, eye ball motion, Piezoelectricity, Finite element method, eye diseases, Electronic, Optical and Magnetic Materials, ultrathin nanogenerators, Biomaterials, active sensors, Electrochemistry, Optoelectronics, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, FOIL method, Voltage
Abstract

International audience; Ultrathin piezoelectric nanogenerator (NG) with a total thickness of ≈16 μm is fabricated as an active or self-powered sensor for monitoring local deformation on a human skin. The NG was based on an anodic aluminum oxide (AAO) as an insulating layer grown on a thin Al foil by anodization, on which a thin film made of aligned ZnO nanowire compacted arrays is grown by solution chemistry. The performance of the NG is characterized with the assistance of the finite element method (FEM) simulation. The extremely thin NG is attached on the surface of an eyelid, and its output voltage/current characterizes the motion of the eye ball underneath. Since there is no external power needed for the operation of the NG, this self-powered or active sensor can be effective in monitoring sleeping behavior, brain activities, and spirit status of a person as well as any biological associated skin deformation.

Published
2014
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14. On-chip Integrated Millimeter-wave Antennas on a Local Porous Si Substrate

Author

P., Sarafis, C-L, Hsu, G., Ardila, P., Benech, A., Nassiopoulou, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Rasolofoniaina, Brigitte, and Beyond CMOS Nanodevices for Adding Functionalities to CMOS - NANOFUNCTION - - ICT2010-08-31 - 2013-08-31 - 257375 - VALID

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

Session 1P4b: SC4: innovative materials/metamaterials for wireless circuits and miniaturized antennas; International audience

Published
2013

15. Light absorption processes and optimization of ZnO/CdTe core–shell nanowire arrays for nanostructured solar cells

Author

Vincent Consonni, Mauro Zanuccoli, Anne Kaminski-Cachopo, Davide Bucci, Jérôme Michallon, Alain Morand, Jérôme Michallon, Davide Bucci, Alain Morand, Mauro Zanuccoli, Vincent Consonni, Anne Kaminski-Cachopo, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Department of electrical, electronic and information engineering 'GUGLIELMO MARCONI' [Bologna] (DEI), Alma Mater Studiorum Università di Bologna [Bologna] (UNIBO), BQR Celeste, European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
NUMERICAL MODELING, Materials science, Nanowire, Shell (structure), Bioengineering, 02 engineering and technology, Substrate (electronics), NANOWIRES, 01 natural sciences, 010309 optics, Optics, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, Rigorous coupled-wave analysis, Absorption (electromagnetic radiation), business.industry, Mechanical Engineering, SOLAR CELLS, General Chemistry, 021001 nanoscience & nanotechnology, Cadmium telluride photovoltaics, Core (optical fiber), Mechanics of Materials, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Current density
Abstract

International audience; The absorption processes of extremely thin absorber solar cells based on ZnO/CdTe core–shell nanowire (NW) arrays with square, hexagonal or triangular arrangements are investigated through systematic computations of the ideal short-circuit current density using three-dimensional rigorous coupled wave analysis. The geometrical dimensions are optimized for optically designing these solar cells: the optimal NW diameter, height and array period are of 200 ± 10 nm, 1–3 μm and 350–400 nm for the square arrangement with CdTe shell thickness of 40–60 nm. The effects of the CdTe shell thickness on the absorption of ZnO/CdTe NW arrays are revealed through the study of two optical key modes: the first one is confining the light into individual NWs, the second one is strongly interacting with the NW arrangement. It is also shown that the reflectivity of the substrate can improve Fabry–Perot resonances within the NWs: the ideal short-circuit current density is increased by 10% for the ZnO/fluorine-doped tin oxide (FTO)/ideal reflector as compared to the ZnO/FTO/glass substrate. Furthermore, the optimized square arrangement absorbs light more efficiently than both optimized hexagonal and triangular arrangements. Eventually, the enhancement factor of the ideal short-circuit current density is calculated as high as 1.72 with respect to planar layers, showing the high optical potentiality of ZnO/CdTe core–shell NW arrays.

Published
2015
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16. Nanowires applications in the More Moore/More-Than-Moore perspectives

Author

Mouis, M., Lee, J. W., Mongillo, M., Marco Pala, Cresti, A., Hinchet, R., Ardila, G., Montès, L., Kaminski, A., Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), European Project: 257375,ICT,FP7-ICT-2009-5,NANOFUNCTION(2010), European Project: 257111,EC:FP7:ICT,FP7-ICT-2009-5,SQWIRE(2010), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Rasolofoniaina, Brigitte, Beyond CMOS Nanodevices for Adding Functionalities to CMOS - NANOFUNCTION - - ICT2010-08-31 - 2013-08-31 - 257375 - VALID, and Silicon Quantum Wire Transistors - SQWIRE - - EC:FP7:ICT2010-09-01 - 2013-08-31 - 257111 - VALID

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

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