Search

The quality of the SiO2/4H-SiC interface is critical for enhancing the performance of 4H-SiC metal–oxide–semiconductor field effect transistor devices. This research primarily concentrates on characterizing near-interface traps (NITs) in the SiO2/4H-SiC metal–oxide–semiconductor (MOS) capacitor using transient capacitance (C–t) measurements. Two types of samples were analyzed: thermally oxidized SiO2/4H-SiC MOS capacitors with (sample OX) and without (sample NO) NO post-oxidation annealing. It was found that the measurement voltage in C–t measurements significantly affects the electrical response of NITs, which has not received substantial attention in previous reports. By carefully selecting the measurement voltage, the maximum distance that carriers can tunnel into SiO2 from 4H-SiC can be assessed. Under the stress condition of maintaining a gate voltage of 20 V for 100 s, the maximum tunneling distances were determined to be 1.6 nm for sample OX and 1.4 nm for sample NO. Additionally, the concentrations of active NITs in both samples were examined. The results provide direct evidence that NO annealing significantly reduces active NITs, particularly those located farther from the interface. [ABSTRACT FROM AUTHOR]

We investigate the MX2 (M = {Hf, Zr}, X = {S, Se}) transition metal dichalcogenides patterned into armchair (AC) and zigzag (ZZ) nanoribbons (NRs) as potential channel materials in future logic field-effect devices. Ab initio quantum transport simulations are employed to assess the electronic, transport, and ballistic field-effect transistor (FET) properties of devices with such quasi-one-dimensional channels. We report a non-monotonic scaling behavior of MX2NR properties due to strong quantum confinement effects, which is reflected in a strong dependence of the ON-state current (ION) of MX2NR FETs on the nanoribbon configuration. The ∼2 nm-wide HfSe2 and ZrSe2 AC-PFETs have the highest ION of up to 2.6 mA/μm at 10 nA/μm OFF-state current. Surprisingly, MX2NR ZZ-NFETs exhibit a current increase of up to 70% when channel width is scaled down, with ION reaching 2.2 mA/μm in ∼2 nm-wide devices. The high ON-state performance is a direct consequence of high carrier injection velocity, which is explained by analyzing the band structure, transmission, and density of states. We demonstrate that nanostructured MX2 materials can be promising candidates for future logic transistors based on multi-nanowire architectures. [ABSTRACT FROM AUTHOR]

Large Schottky barriers formed at the interfaces between graphene and 2D semiconductors often degrade device performance. Here, taking the Janus MoSO as a prototype and using the first-principles calculations together with the band unfolding technique, we demonstrate that the Ohmic contact (OC), which is absent in pristine graphene/MoXY (X/Y = S, Se, Te. X ≠ Y), is realized in the pristine graphene/MoSO (G/MoSO) heterostructure. G/OMoS shows the n -type OC (OC- n) that leads to the p -doping of the graphene layer with a hole density of 1.17 × 10 13 /cm 2 , while G/SMoO exhibits the p -type Schottky contact with a tunable Schottky barrier height. The realization of OC and the interface dependent contact type are mainly attributed to the large intrinsic dipole between asymmetric S and O layers, which dominate the different behaviors of charge transfer and the associated interface dipole in heterostructures. Inspired by the finding, considering the larger dipole moment in Janus MoSeO and MoTeO, we further confirm that both OC- n and OC- p exist in pristine G/MoSeO and G/MoTeO. Moreover, on comparison with MoSO, both G/OMoS and G/SMoO show enhanced optical absorptions (∼ 10 5 cm − 1 ) in most of the visible light range. Our results not only show the potential application of G/MoSO in nanoelectronic devices such as field-effect transistors but also indicate that dipole engineering would help us to predict or design desirable electric contacts of Janus-transition metal dichalcogenide-based metal/semiconductor systems in advance. [ABSTRACT FROM AUTHOR]

In this contribution, we describe the various research domains in which RuII alkynyl derivatives are involved. Their peculiar molecular properties stem from a strong and intimate overlap between the metal centered d orbitals and the π system of the acetylide ligands, resulting in plethora of fascinating properties such as strong and tunable visible light absorption with a strong MLCT character essential for sensing, photovoltaics, light‐harvesting applications or non‐linear optical properties. Likewise, the d/π mixing results in tunable redox properties at low potential due to the raising of the HOMO level, and making those compounds particularly suited to achieve redox switching of various properties associated to the acetylide conjugated ligand, such as photochromism, luminescence or magnetism, for charge transport at the molecular level and in field effect transistor devices, or charge storage for memory devices. Altogether, we show in this review the potential of RuII acetylide compounds, insisting on the molecular design and suggesting further research developments for this class of organometallic dyes, including supramolecular chemistry. [ABSTRACT FROM AUTHOR]

Nowadays, silicon-based fin field-effect transistor (FinFET) devices have become the top choice for integrated circuit designers because they can handle the majority of application scenarios. In this article, the authors propose applying deep learning models to predict the electrical characteristics of devices using their structural parameters, aiming to solve the problems of complexity, time consumption, and convergence difficulty in traditional simulations. The authors first determine the electrical characteristics of simulations on FinFET devices using technology computer-aided design (TCAD). Different deep learning models were constructed in this study to predict various electrical parameters and characteristics of integrated circuit devices based on different datasets and prediction tasks, and high levels of accuracy were achieved. For instance, the average normalized mean square error of the predicted electrical parameters of FinFET devices based on TCAD simulation was less than 1.4 × 10−5, while the average relative errors of the predicted DC and AC characteristics of FinFET devices based on Berkeley short-channel insulated gate FET model (BSIM) simulation were 7.12 × 10−3 and 4.8 × 10−3, respectively. These results demonstrate that the proposed deep learning models can effectively predict the electrical parameters and characteristics of integrated circuit devices, providing strong support for device design and optimization. [ABSTRACT FROM AUTHOR]

GdI 2 monolayer is a promising material for spintronics applications due to its robust room-temperature ferromagnetism and sizable valley polarization. In two-dimensional van der Waals magnets, interlayer magnetic coupling plays a crucial role in device applications. The performance of these devices can be effectively tuned by adjusting the stacking order, charge doping, and strain. By performing first-principles calculations, we have demonstrated that the interlayer magnetic coupling in bilayer GdI 2 is highly dependent on the stacking order, which can be tuned between ferromagnetic (FM) and antiferromagnetic orders through lateral shifting. Furthermore, the interlayer magnetic coupling can also be tuned by charge doping and strain, where both electron and hole doping can enhance the FM coupling interaction between layers, and the interlayer FM coupling can be strengthened with increasing biaxial tensile strain. These results show that bilayer GdI 2 has rich tunable interlayer magnetic interactions, which can be used in designing interesting spin tunnel field-effect transistor devices. [ABSTRACT FROM AUTHOR]

GdI 2 monolayer is a promising material for spintronics applications due to its robust room-temperature ferromagnetism and sizable valley polarization. In two-dimensional van der Waals magnets, interlayer magnetic coupling plays a crucial role in device applications. The performance of these devices can be effectively tuned by adjusting the stacking order, charge doping, and strain. By performing first-principles calculations, we have demonstrated that the interlayer magnetic coupling in bilayer GdI 2 is highly dependent on the stacking order, which can be tuned between ferromagnetic (FM) and antiferromagnetic orders through lateral shifting. Furthermore, the interlayer magnetic coupling can also be tuned by charge doping and strain, where both electron and hole doping can enhance the FM coupling interaction between layers, and the interlayer FM coupling can be strengthened with increasing biaxial tensile strain. These results show that bilayer GdI 2 has rich tunable interlayer magnetic interactions, which can be used in designing interesting spin tunnel field-effect transistor devices. [ABSTRACT FROM AUTHOR]

Epitaxial graphene (EG) on cubic silicon carbide (3C-SiC) on silicon holds the promise of tunable nanoelectronic and nanophotonic devices, some uniquely unlocked by the graphene/cubic silicon carbide combination, directly integrated with the current well-established silicon technologies. Yet, the development of graphene field-effect devices based on the 3C-SiC/Si substrate system has been historically hindered by poor graphene quality and coverage, as well as substantial leakage issues of the heteroepitaxial system. We address these issues by growing EG on 3C-SiC on highly resistive silicon substrates using an alloy-mediated approach. In this work, we demonstrate a field-effect transistor based on EG/3C-SiC/Si with gate leakage current 6 orders of magnitude lower than the drain current at room temperature, which is a vast improvement on the current literature, opening the possibility for dynamically tunable nanoelectronic and nanophotonic devices on silicon at the wafer level. [ABSTRACT FROM AUTHOR]

We investigate the effect of structural and substitutional defects in Janus MoSSe and the Janus alloys MoS2(1−x)Se2x by a comprehensive analysis. Distinct Raman signatures are associated with various defect types and densities, mirroring the evolution from MoSe2 to Janus alloys to ideal Janus MoSSe. By the corresponding stoichiometrical and structural changes, the band gap can be tuned from 1.50 eV up to 1.68 eV at room temperature. Electrical characterization in a field effect device uncovers the impact of defects on conductivity, mobility (up to 2.42 × 10−3 cm2 V−1 s−1), and threshold voltages. A decrease of n-type doping of 5.3 × 1011 cm−2 in Janus MoSSe compared to the Janus alloy points towards an increased work function and a reduction of defects. Our findings deepen the understanding of defect physics in 2D Janus materials and pave the way for tailored defect engineering strategies for advanced (opto-)electronic applications. [ABSTRACT FROM AUTHOR]

Chemical sensors are increasingly used in healthcare because of their small size, durability, low resistance, and quick reaction time. This research aims to develop a pH biosensor utilizing an ion-sensitive field-effect transistor (ISFET) simulated with Silvaco technology computer-aided design (TCAD) software. The pH range of operation for the ISFET is 2 to 12. Sensitivity was evaluated based on the critical pH value and threshold voltage (Vth) parameters across different gate channel lengths (250 nm, 200 nm, and 50 nm) and sensing membrane thicknesses (3 nm, 10 nm, and 20 nm). The sensitivity of different materials to pH levels was measured. Titanium dioxide (TiO2) had the highest sensitivity at 57.98 mV/pH, followed by hafnium (IV) oxide (HfO2) at 57.46 mV/pH, tantalum pentoxide (Ta2O5) at 57.36 mV/pH, aluminium oxide (Al2O3) at 55.05 mV/pH, and silicon nitride (Si3N4) at 54.75 mV/pH. Notably, TiO2 with a 200 nm gate channel length and a 3 nm sensing membrane thickness demonstrated the highest sensitivity. These findings highlight the potential of ISFETs, particularly those with TiO2 sensing membranes, as robust and precise pH monitoring platforms in the biomedical industry. [ABSTRACT FROM AUTHOR]

We study field effect nanotransistor devices in the Si/SiO2 material system which are based on lateral resonant tunneling between two parallel conduction channels. After introducing a simple piecewise linear potential model, we calculate the quantum transport properties in the R-matrix approach. In the transfer characteristics, we find a narrow resonant tunneling peak around zero control voltage. Such a narrow resonant tunneling peak allows one to switch the drain current with small control voltages, thus opening the way to low-energy applications. In contrast to similar double electron layer tunneling transistors that have been studied previously in III-V material systems with much larger channel lengths, the resonant tunneling peak in the drain current is found to persist at room temperature. We employ the R-matrix method in an effective approximation for planar systems and compare the analytical results with full numerical calculations. This provides a basic understanding of the inner processes pertaining to lateral tunneling transport. [ABSTRACT FROM AUTHOR]

In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel. The overlapping gate and source contact regions create a strong and uniform electric field in the channel. Furthermore, the metal–semiconductor Schottky junction in the intrinsic source region induces the required carriers without the need for doping. This innovative design achieves both a steeper subthreshold swing (SS) and a higher ON-state current (ION). Using calibration-based simulations with Sentaurus TCAD, we compare the performance of three newly designed device structures: the conventional Nanosheet Tunnel Field-Effect Transistor (NS-TFET), the Nanosheet Line-tunneling TFET (NS-LTFET), and the proposed FS-iTFET. Simulation results show that, compared to the traditional NS-TFET, the NS-LTFET with its full line-tunneling structure improves the average subthreshold swing (SSAVG) by 19.2%. More significantly, the FS-iTFET, utilizing the Schottky-inductive source, further improves the SSAVG by 49% and achieves a superior ION/IOFF ratio. Additionally, we explore the impact of Trap-Assisted Tunneling on the performance of the three different integrations. The FS-iTFET consistently demonstrates superior performance across various metrics, highlighting its potential in advancing tunnel field-effect transistor technology. [ABSTRACT FROM AUTHOR]

Current diagnostic and prognostic tests for prostate cancer require specialised laboratories and have low specificity for prostate cancer detection. As such, recent advancements in electrochemical devices for point of care (PoC) prostate cancer detection have seen significant interest. Liquid-biopsy detection of relevant circulating and exosomal nucleic acid markers presents the potential for minimally invasive testing. In combination, electrochemical devices and circulating DNA and RNA detection present an innovative approach for novel prostate cancer diagnostics, potentially directly within the clinic. Recent research in electrochemical impedance spectroscopy, voltammetry, chronoamperometry and potentiometric sensing using field-effect transistors will be discussed. Evaluation of the PoC relevance of these techniques and their fulfilment of the WHO's REASSURED criteria for medical diagnostics is described. Further areas for exploration within electrochemical PoC testing and progression to clinical implementation for prostate cancer are assessed. [ABSTRACT FROM AUTHOR]

Redox gating involves the use of reversible redox functionalities combined with ionic electrolytes to substantially alter the charge carrier density in functional condensed materials. This modification leads to the emergence of physical properties not observed in the original material. In our study, we focus on redox gating applied to a LaNiO3 (001) film within a field-effect device and identify a critical gate voltage of 0.7 V. Hall measurements indicate that redox gating markedly increases the charge carrier density in LaNiO3, reaching over 1014 cm−2. This increase is primarily due to the injection of electrons into LaNiO3, which offsets the existing hole carriers. These adjustments in the carrier concentration result in reversible lattice expansion in LaNiO3 when gate voltages are below 0.7 V. This expansion correlates well with theoretical models that consider adjustments to the Ni–O bond length, influenced by oxygen ligand holes. Conversely, at gate voltages above 0.7 V, there are significant changes in resistivity, lattice structure, and Ni valence, stemming from the formation of oxygen vacancies in the LaNiO3 film. [ABSTRACT FROM AUTHOR]

Understanding and improving the contact resistance of two-dimensional materials for the fabrication of next-generation devices is of vital importance to be able to fully utilize the new physics available in these materials. In this work, eight different contact metals (Ag, Au, Cr, Cu, In, Mo, Ni, and Ti) have been investigated using the same sample of monolayer MoS2. Through the fabrication and testing of multiple, identically sized field-effect transistor devices per contact metal, we compensate for large variability in electrical properties of as-grown chemical vapor deposition MoS2 and deduce the relative performance of each metal. The general trend of lower work function metals having lower contact resistance holds with In, Ag, and Ti performing the best of the metals tested. Our results are compatible with recent research suggesting that the contact resistance in undoped, monolayer MoS2 is dominated by a lateral junction resistance, and we provide context for how this manifests in device-to-device variation. Multiple orders of magnitude differences in contact resistance are observed between metals and can be explained by this lateral barrier operating in the thermionic-field emission regime. [ABSTRACT FROM AUTHOR]

This study developed a technology for a vertical field‐effect transistor (VFET) incorporating c‐axis aligned crystal oxide semiconductor on a Gen 3.5 glass substrate. VFETs, with a channel length of 0.5 μm, demonstrated stable characteristics with minimal variation, higher on‐state current compared with low‐temperature polysilicon FETs, and extremely low off‐state leakage current. A prototype 513‐ppi organic light‐emitting diode display that features a red, green, and blue stripe arrangement and includes an internal compensation circuit with a configuration of six transistors and two capacitors was fabricated by harnessing the advantageous features of VFETs. Such a display was previously unattainable with planar FETs. Thus, the developed VFET technology presents a viable pathway for achieving ultrahigh‐resolution panels on glass substrates. [ABSTRACT FROM AUTHOR]

Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W–1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics. [ABSTRACT FROM AUTHOR]

We demonstrate the realization of reliable, high-quality, micro-sized graphene-based field-effect devices on a flexible and transparent substrate, ethylene vinyl acetate (EVA)/polyethylene terephthalate (PET), using a convenient hot-press lamination transfer and employing parylene-N as a dielectric material for gating. Using this technique, we fabricate a graphene thermocouple on the EVA/PET substrate. Specifically, the graphene is patterned in a U-shape, and its legs are equipped with two independent top gates. Full control of the carrier density and type by electrostatic gating in the two graphene regions allow the formation of a thermocouple layout, exhibiting an enlarged thermovoltage signal when the two regions are doped with opposite types of carriers and leading to a maximum sensitivity with a thermopower of ∼73 µV/K. This agrees well with the working principle of thermocouple, and it proves the good compatibility and functionality of the graphene thermocouple on the EVA/PET substrate. Our findings suggest possible applications for producing scalable and reliable graphene-based electronic devices on flexible and transparent substrates in a simple way. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) materials are attracting attention because of their outstanding physical, chemical, and electrical properties for applications of various future devices such as back-end-of-line field effect transistor (BEOL FET). Among many 2D materials, tin disulfide (SnS2) material is advantageous for low temperature process due to low melting point that can be used for flexible devices and back-end-of-line (BEOL) devices that require low processing temperature. However, low temperature synthesis method has a poor crystallinity for applying to various semiconductor industries. Hence, many studies of improving crystallinity of tin disulfide film are studied for enhancing the quality of film. In this work, we propose a precursor multi-dosing method before deposition of SnS2. This precursor pre-treatment was conducted by atomic layer deposition cycles for more adsorption of precursors to the substrate before deposition. The film quality was analyzed by x-ray diffraction, Raman, transmission electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy. As a result, more adsorbates by precursor pre-treatment induce higher growth rate and better crystallinity of film. [ABSTRACT FROM AUTHOR]

Poly(3-alkylthiophenes) (P3[Alkyl]T) exhibit high mobility and efficiency of formation of polaronic charge carriers generated by light absorption, thus finding applications in field effect devices. Excited states of π-stacked dimers of tetra-thiophene oligomers (T4), infinite isolated polythiophene (PT) chains, and P3[Alkyl]T crystals are modeled using configuration interaction singles (CIS) calculations. Excited states in cofacial T4 dimers are mostly localized Frenkel states except for two low energy charge transfer (CT) exciton states, which become the ionization potential and electron affinity levels of T4 molecules at large dimer separation. The lowest excited states in infinite, isolated PT chains and P3[Alkyl]T crystals are intra-chain excitons where the electron and hole are localized on the same chain. The next lowest excited states are interchain, CT excitons in which the electron and hole reside on neighboring chains. The former capture almost all optical oscillator strength and the latter may be a route to efficient formation of polaronic charge carriers in P3[Alkyl]T systems. Changes in optical absorption energies of T4 dimers as a function of molecular separation are explained using CIS calculations with four frontier orbitals in the active space. Shifts in optical absorption energy observed on going from isolated chains to P3[Alkyl]T lamellar structures are already present in single-particle transition energies induced by direct π–π interactions at short range. The electroabsorption spectrum of T4 dimers is calculated as a function of dimer separation and states that are responsible for parallel and perpendicular components of the spectrum are identified. [ABSTRACT FROM AUTHOR]

A WSe2 field effect transistor integrated with a lead zirconium titanate (PZT) pyroelectric device has been designed, fabricated, and tested and is described as the integrated pyroelectric device. The integrated device has been compared to a standalone pyroelectric device, which consists of PZT sandwiched between platinum electrodes. A pyroelectric coefficient of 1.755 × 10−4 C/m2K has been realized for our thin-film PZT (650 nm). The integrated device amplifies the output of the standalone device by over ten orders of magnitude as the current density calculated for the devices is 16 nA/mm2 and 1 nA/mm2, respectively. The interplay between the pyro- and ferro-induced polarization of the integrated device has been studied. From our observations, the ferroelectric gating controls directly the drain-source current output of the integrated device, showing anti-clockwise hysteresis behavior. The device shows promise for application in infrared sensing. [ABSTRACT FROM AUTHOR]

Purpose: High packaging density in the present VLSI era builds an acute power crisis, which limits the use of MOSFET device as a constituent block in CMOS technology. This leads researchers in looking for alternative devices, which can replace the MOSFET in CMOS VLSI logic design. In a quest for alternative devices, tunnel field effect transistor emerged as a potential alternative in recent times. The purpose of this study is to enhance the performances of the proposed device structure and make it compatible with circuit implementation. Finally, the performances of that circuit are compared with CMOS circuit and a comparative study is made to find the superiority of the proposed circuit with respect to conventional CMOS circuit. Design/methodology/approach: Silicon–germanium heterostructure is currently one of the most promising architectures for semiconductor devices such as tunnel field effect transistor. Analytical modeling is computed and programmed with MATLAB software. Two-dimensional device simulation is performed by using Silvaco TCAD (ATLAS). The modeled results are validated through the ATLAS simulation data. Therefore, an inverter circuit is implemented with the proposed device. The circuit is simulated with the Tanner EDA tool to evaluate its performances. Findings: The proposed optimized device geometry delivers exceptionally low OFF current (order of 10^−18 A/um), fairly high ON current (5x10^−5 A/um) and a steep subthreshold slope (20 mV/decade) followed by excellent ON–OFF current ratio (order of 10^13) compared to the similar kind of heterostructures. With a very low threshold voltage, even lesser than 0.1 V, the proposed device emerged as a good replacement of MOSFET in CMOS-like digital circuits. Hence, the device is implemented to construct a resistive inverter to study the circuit performances. The resistive inverter circuit is compared with a resistive CMOS inverter circuit. Both the circuit performances are analyzed and compared in terms of power dissipation, propagation delay and power-delay product. The outcomes of the experiments prove that the performance matrices of heterojunction Tunnel FET (HTFET)-based inverter are way ahead of that of CMOS-based inverter. Originality/value: Germanium–silicon HTFET with stack gate oxide is analytically modeled and optimized in terms of performance matrices. The device performances are appreciable in comparison with the device structures published in contemporary literature. CMOS-like resistive inverter circuit, implemented with this proposed device, performs well and outruns the circuit performances of the conventional CMOS circuit at 45-nm technological node. [ABSTRACT FROM AUTHOR]

Context: Two-dimensional materials are a new and promising research field in materials science. This is mainly attributed to their unique photoelectric and chemical properties. In addition to possessing unique optoelectronic and chemical properties, two-dimensional materials also have important application prospects in the field of field-effect devices. Based on density functional theory, the effects of uniaxial strain and equibiaxial strain on the mechanical properties, electronic structure, and optical properties of monolayer h-BN were studied using first principles. The results indicate that compressive strain has a significant impact on the stability of monolayer h-BN. The band gap width of monolayer h-BN decreases with increasing strain, and the optical properties of monolayer h-BN exhibit a relative trend under tensile and compressive strains. The influence of biaxial strain on the mechanical properties, electronic structure, and optical properties of monolayer h-BN is greater than that of uniaxial strain. Methods: All the calculations were done by the VASP software based on density functional theory. The interaction between atomic nuclei and electrons is described by the projected added wave pseudopotential (PAW), using the generalized gradient approximation (GGA) to exchange the Perdew-Burke-Ernzerhof (PBE) of the functional. To avoid interlayer interactions, a 15-Å vacuum layer was set up. The Brillouin zone selects the Monkhorst–Pack method to generate 9 × 9 × 1 of k-point grid, the cut off energy is set to 500 eV, the energy convergence standard of the system is 1 × 10−5 eV, and the interaction force between atoms is 0.01 eV/Å. [ABSTRACT FROM AUTHOR]

Regioregular poly(3-hexylthio)thiopene (P3HTT) has emerged tremendous potential in organic electronic applications due to the strong noncovalent interactions from the sulfur atom linked to thiophene. However, P3HTT generally exhibits low charge mobility mostly due to poor solution processability attributed to dense arrangement of hexylthio side chain in polymer, which led to strong noncovalent interactions among sulfur atoms. To balance the nonvalent interaction and aggregation for P3HTT, herein, we systematically study the effect of hexylthio side chain content in polymer backbone on the structure and properties. A series of regioregular P3HTT-based homopolymers (P3HTT, P3HTT-50, P3HTT-33 and P3HTT-25) were prepared via Kumada catalyst transfer polycondensation method from a set of mono-, bi-, ter- and quarter-thiophenes containing different contents of hexylthio side chain. The DFT calculation shows the planarity of polymers backbone could be improved through reducing the density of hexylthio side chain in polymer mainchain. And significant changes in their crystallinity, aggregation and optical properties were observed with the content of hexylthio side chain reducing. The P3HTT-33 displayed the highest field-effect transistor hole mobility of 2.83×10−2 cm2·V−1·s−1 resulting from a balance between the crystallinity and planarity. This study demonstrates modulating the content of hexylthio side chain in P3HTT is an effective strategy to optimize the opto-electronic properties of polymer obtaining excellent semiconductor device performance. [ABSTRACT FROM AUTHOR]

Ultra‐wide bandgap semiconductors are gaining attention for their promising properties for UV optoelectronics and UV transparent electronics as well as high‐power applications. Among them, La‐doped SrSnO3 exhibits excellent properties both for deep‐UV transparent oxide semiconductors and deep‐UV transparent conducting oxide. Here, the demonstration of thin film transistors (TFTs) with full deep‐UV transparency is reported, including electrodes, gate oxide, and substrate. The lightly La‐doped SrSnO3 for the channel layer is grown on MgO (100) substrates with buffer layers by pulsed laser deposition. TFTs with a metal—insulator–semiconductor structure are fabricated using high‐k perovskite dielectric LaScO3 as the gate oxide. A degenerately La‐doped SrSnO3 is used as the gate, the source, and the drain electrodes to obtain good ohmic contact with the channel layer as well as UV transparency. The resultant device shows a field effect mobility value of ≈24 cm2 V−1 s−1 and an on/off ratio >106. The optical transmittance of the entire device (including the substrate) is found to be >75% at 300 nm in wavelength. Furthermore, the electrical characteristics of the device exhibit excellent stability under visible irradiation. This research highlights the potential of SrSnO3 in advancing the field of UV optoelectronics and UV transparent electronics. [ABSTRACT FROM AUTHOR]

The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon liquid‐gated nanowire field‐effect transistor devices are investigated in different concentrations of MgCl2 solutions. The critical concentration of MgCl2 solution for charge inversion at the solid‐liquid interface is verified using noise spectroscopy and confirmed using the capacitance‐voltage measurement technique. In this study, it is found that the Hooge parameter (αH) and the equivalent input noise (SU) can effectively reflect the ion behavior on the surface of the nanowire. Moreover, the noise curves for αH and SU indicate two turning points at concentrations of 10−4 and 10−1 m for a peak and a valley, respectively. The noise transformation is related to the behavior of ions near the solid‐liquid interface in solutions with different MgCl2 concentrations is revealed. The results show that noise spectroscopy is a powerful method for monitoring charge dynamic processes in the research field of biosensors. [ABSTRACT FROM AUTHOR]

This work implements three fast measurement techniques based on the measure–stress–measure (MSM) method. These techniques, namely, measuring–around– , one–point on–the–fly (OTF), and pulsed current-voltage (PIV), were used to characterize three different technologies of metal–oxide–semiconductor field-effect transistors (MOSFETs) with same gate dielectric silicon–dioxide (SiO2) and various thicknesses = 20 nm, 4 nm, 2.3 nm. Moreover, well–configured electrical stress biasing has been performed to discuss the dielectric degradation of these devices using those characterization techniques. The pros and cons of the used techniques are well discussed based on our results. Furthermore, experimental results showed that threshold voltage shift () follows a power law time dependence with time exponent (n) being 0.16 for molecular hydrogen (H2) diffusing species and 0.25 for hydrogen atoms (H) diffusing species. We have found that the thicker the SiO2 dielectric the more the oxide traps () contribute to the resulting degradation. However, the dependency between SiO2 dielectric thickness and oxide traps could not be necessarily linear. [ABSTRACT FROM AUTHOR]

Silanization is one of the widely explored surface modification strategies for biofunctionalization of oxide interfaces. For biosensor applications, silanes with active terminal groups such as amine, thiol, carboxylic, and aldehyde groups are utilized in routine. In near‐field sensing schemes like biologically sensitive field‐effect transistors, it is crucial to generate a homogeneous layer of silane to confine the biointeractions in close vicinity of the sensor interface. The homogeneity of such biofunctional layer is determined by the surface activation and silanization protocol being applied. Herein, the impact of the surface activation process and silanization on electrical characteristics of field‐effect devices is studied comprehensively using an electrolyte‐oxide‐semiconductor (EOS) capacitor with a high‐quality gate oxide. The thermally grown silicon oxide (SiO2) interface is activated using acidic mixtures and plasma treatment, while the subsequent silanization steps are investigated comparatively using two different silanes (3‐aminopropyl triethoxysilane (APTES) and 3‐glycidyloxypropyl trimethoxysilane (GPTMS) in wet‐chemical and vapor‐phase processes. Furthermore, the optimized silanization process is utilized to immobilize an oligo strand at the EOS capacitor surface, followed by the hybridization of complementary oligo strands. The optimized protocol holds the potential for large‐scale production of functional oxide interfaces for various applications. [ABSTRACT FROM AUTHOR]

The synthesis of bench‐stable conjugated π‐radicals is challenging owing to the lack of modular approaches, which greatly hampers their practical material screens and applications. Here, we demonstrate a spin‐distribution‐directed regioselective substitution strategy to introduce substituents into the specific positions of an olympicenyl radical in a stepwise manner, resulting in a series of highly stable radical species. The substituents can also adjust the crystal packing by means of steric and electronic factors, enabling the changing from a π‐dimer to a pseudo‐one‐dimensional chain. The first single crystal organic field‐effect transistor device based on a graphenic radical is fabricated in air, showing a hole mobility of up to 0.021 cm2 V−1 s−1 and excellent device stability. This approach may be generalized to diverse spin‐delocalized open‐shell organic radicals. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS2 transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS2 transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobility, on/off current ratio, and breakdown voltage of gate dielectric are dramatically enhanced by field-effect mobility (from 0.166 to 1.08 cm2/V·s), on/off current ratio (from 4.90 × 105 to 1.52 × 107), and breakdown voltage (from 15.73 to 27.48 V) compared with a local back-gate-based MoS2 transistor, respectively. Integrated logic circuits, including inverters, NAND, NOR, AND, and OR gates, were successfully fabricated by 2-inch wafer-scale through the integration of a buried-gate MoS2 transistor array. [ABSTRACT FROM AUTHOR]

Printing technology will improve the complexity and material waste of traditional deposition and lithography processes in device fabrication. In particular, the printing process can effectively control the functional layer stacking and channel shape in thin-film transistor (TFT) devices. We prepared the patterning indium gallium zinc oxide (IGZO) semiconductor layer with Ga, In, and Zn molar ratios of 1:2:7 on Si/SiO2 substrates. And the patterning source and drain electrodes were printed on the surface of semiconductor layers to construct a TFT device with the top contact and bottom gate structures. To overcome the problem of uniform distribution of applied voltages between electrode centers and edges, we investigated whether the circular arc channel could improve the carrier regulation ability under the field effect in printed TFTs compared with a traditional structure of rectangular symmetry and a rectangular groove channel. The drain current value of the IGZO TFT with a circular arc channel pattern was significantly enhanced compared to that of a TFT with rectangular symmetric source/drain electrodes under the corresponding drain–source voltage and gate voltage. The field effect properties of the device were obviously improved by introducing the arc-shaped channel structure. [ABSTRACT FROM AUTHOR]

The miniaturization of infrared spectroscopy enables portable and low-cost devices, which could revolutionize many scientific and technological fields including environment monitoring, pharmacy, and biosensing. As a promising approach, metamaterial technologies have been widely developed in miniaturizing all the individual components of infrared spectroscopy such as light sources, sensors, spectral filters, and photodetectors. However, a systematic consideration on the whole device level is still lacking. In this Perspective, we focus on the possible opportunities offered by metamaterials for ultracompact infrared spectroscopy. To start with, we review the recent metamaterial-related component-level demonstrations. Then, we draw attention to the potential role of metamaterials as a common platform for all the individual components. Finally, we discuss about the near field effect in metamaterial-mediated devices. [ABSTRACT FROM AUTHOR]

Based on first-principles calculations, we predict that the recently synthesized two-dimensional (2D) NbSe2 can be changed from the metallic to the semiconducting phase upon the adsorption of H with an indirect bandgap of 2.99 eV. The bandgap opening of the 2D NbSe2 only occurs when the hydrogen coverage is high, and it is sensitive to mechanical strain. The hydrogenated 2D NbSe2 is dynamically stable under a tensile strain of up to 9%, whereas a compressive strain leads to instability of the system. The optical spectra obtained from the GW-Bethe–Salpeter equation calculations suggest that 2D NbSe2 is highly isotropic, and it will not affect the polarization of light along the x- or y-direction. The optical bandgap, describing the transition energy of the exciton, is sensitive to the mechanical strain with the calculated exciton binding energy of ∼0.42 eV. These intriguing properties suggest that H functionalized 2D NbSe2, grown on a substrate with a larger lattice parameter, can be used to modulate the bandgap of NbSe2. This is beneficial in developing a nanoscale field effect and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Covalent organic frameworks (COFs), as a burgeoning class of crystalline porous materials, have made significant progress in their application to optoelectronic devices such as field‐effect transistors, memristors, and photodetectors. However, the insoluble features of microcrystalline two‐dimensional (2D) COF powders limit development of their thin film devices. Additionally, the exploration of spin transport properties in this category of π‐conjugated skeleton materials remains vacant thus far. Herein, an imine‐linked 2D Py‐Np COF nanocrystalline powder was synthesized by Schiff base condensation of 4,4′,4′′,4′′′‐(pyrene‐1,3,6,8‐tetrayl)tetraaniline and naphthalene‐2,6‐dicarbaldehyde. Then, we prepared a large‐scale free‐standing Py‐Np COF film via a top‐down strategy of chemically assisted acid exfoliation. Moreover, high‐quality COF films acted as active layers were transferred onto ferromagnetic La0.67Sr0.33MnO3 (LSMO) electrodes for the first attempt to fabricate organic spin valves (OSVs) based on 2D COF materials. This COF‐based OSV device with a configuration of LSMO/Py‐Np COF/Co/Au demonstrated a remarkable magnetoresistance (MR) value up to −26.5 % at 30 K. Meanwhile, the MR behavior of the COF‐based OSVs exhibited a highly temperature dependence and operational stability. This work highlights the enormous application prospects of 2D COFs in organic spintronics and provides a promising approach for developing electronic and spintronic devices based on acid‐exfoliated COF thin films. [ABSTRACT FROM AUTHOR]

The development of n-type organic semiconductors has evolved significantly slower in comparison to that of p-type organic semiconductors mainly due to the lack of electron-deficient building blocks with stability and processability. However, to realize a variety of organic optoelectronic devices, high-performance n-type polymer semiconductors are essential. Herein, conjugated microporous polymers (CMPs) comprising isoindigo acceptor units linked to benzene or pyrene donor units (BI and PI) showing n-type semiconducting behavior are reported. In addition, considering the challenges of deposition of a continuous and homogeneous thin film of CMPs for accurate Hall measurements, a plasma-assisted fabrication technique is developed to yield uniform thin films. The fully conjugated 2D networks in PI- and BI-CMP films display high electron mobility of 6.6 and 3.5 cm² V-1 s-1, respectively. The higher carrier concentration in PI results in high conductivity (5.3 mS cm-1. Both experimental and computational studies are adequately combined to investigate structure-property relations for this intriguing class of materials in the context of organic electronics. [ABSTRACT FROM AUTHOR]

β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is considered to be one of the most promising candidates for power devices including field-effect transistors (FETs) and for other applications such as Schottky barrier diodes (SBDs) and solar-blind ultraviolet photodetectors. Ohmic contact is one of the key steps in the β-Ga2O3 device fabrication process for power applications. Ohmic contact techniques have been developed in recent years, and they are summarized in this review. First, the basic theory of metal–semiconductor contact is introduced. After that, the representative literature related to Ohmic contact with β-Ga2O3 is summarized and analyzed, including the electrical properties, interface microstructure, Ohmic contact formation mechanism, and contact reliability. In addition, the promising alternative schemes, including novel annealing techniques and Au-free contact materials, which are compatible with the CMOS process, are discussed. This review will help our theoretical understanding of Ohmic contact in β-Ga2O3 devices as well as the development trends of Ohmic contact schemes. [ABSTRACT FROM AUTHOR]

A method is presented for scaling up the production of flakes of van der Waals materials via mechanical exfoliation. Using a roll‐to‐roll setup and an automatized, massive parallel exfoliation process, adhesive tapes with a high density of nanosheets of van der Waals materials are produced. The technique allows for obtaining a good trade‐off between large lateral size and excellent area scalability, while also maintaining low cost. The potential of the method is demonstrated through the successful fabrication of field effect transistors and flexible photodetectors in large batches. This low‐cost method to produce large area films out of mechanically exfoliated flakes is very general, and it can be applied to a variety of substrates and van der Waals materials and, moreover, it can be used to combine different van der Waals materials on top of each other. Therefore, it is believed that this production method opens an interesting avenue for fabrication of low‐cost devices while maintaining a good scalability and performance. [ABSTRACT FROM AUTHOR]

Featured with highly structural anisotropy, rhenium-based transition metal dichalcogenides (TMDs) and alloys have attracted significant attention in electronics, optoelectronics, energy storage, and catalysis. The controlled growth of large-area, high-quality anisotropic TMDs is critical for associated applications. However, the Jahn–Teller effect and Peierls distortion of the lattice easily induce out-of-plane growth, making it a challenge to prepare uniform-thickness Re-based TMDs. Here, we report a NaCl-assisted chemical vapor deposition strategy for Re-based TMDs and highlight the essential role of Na+ absorption based on a combination of experiments and density functional theory calculations. We found that Cl has little influence on the intermediate products during the reaction process, while Na is responsible for reducing the highest energy barrier required for the formation of Re–Re chains. The barrier for the rate-determining step is reduced by 0.325 eV compared to that without considering Na+ adsorption. Additionally, the field-effect transistor device based on the sodium-assisted synthesized ReS2 monolayer demonstrates superior electrical properties. Our findings not only provide a reliable experimental scheme for the preparation of Re-based semiconductors but also promote the application of ReS2 in high-performance electronics. [ABSTRACT FROM AUTHOR]

Electric‐field regulation of magnetic properties in perovskite manganites has attracted much attention for its potential in spintronics. For antiferromagnetic perovskite manganites, fewer studies are reported due to technological difficulties in probing their magnetic properties. Here, negative exchange bias (EB) is realized in epitaxial antiferromagnetic/ferromagnetic manganite bilayers with atomically flat interfaces. The low‐voltage pulse modulation of EB is demonstrated using the field‐effect device geometry with the ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene as a dielectric gating layer, antiferromagnetic La0.35Sr0.65MnO3 (AF‐LSMO) as pinning layer, and ferromagnetic La0.7Sr0.3MnO3 (FM‐LSMO) as conduction channel. Instead of using non‐volatile polarizations to control the EB, volatile polarizations in ferroelectric field effect transistors are suggested to be capable of modulating the EB. With high‐resolution electron microscopy and spectroscopy, the non‐volatile regulation of EB is attributed to the creation/annihilation of oxygen vacancies in the AF‐LSMO layer via low‐voltage pulses. This study reveals the effect of volatile electric polarizations in ferroelectric field effect devices and highlights the potential for low‐voltage pulse control of the physical properties in antiferromagnetic perovskite oxide insulators. [ABSTRACT FROM AUTHOR]

The 2D–0D hybrid photodetector, with its special structure, high sensitivity, and wavelength tunability, is reported as a promising candidate system for optoelectronic devices. As research on hybrid lead halide perovskite quantum dots (PQDs) has progressed, PQDs with high photoluminescence (PL) quantum yield and excellent absorption properties are increasingly applied in optoelectronic devices; however, PQD stability remains one of the biggest limitations on device performance. Here, it is reported that the properties and stability of the hybrid photodetectors are improved by surface passivation using the quaternary ammonium ligand (didodecyldimethylammonium bromide, DDAB). The average carrier lifetime of DDAB treated CsPbBr3 PQDs (DDAB‐capped PQDs) is longer than that of pristine CsPbBr3 PQDs by 6.68–14.88 ns. It is confirmed that the durability against water is reduced by only 25.8% at PL intensity and is preserved for more than 16 h. A 2D–0D hybrid photodetector is then fabricated by deposition of DDAB‐capped PQDs on the WSe2 field‐effect transistor device for a high‐performance photodetector. The WSe2/DDAB‐capped PQD hybrid photodetector exhibits an enhanced responsivity of 1.4 × 103 A W−1 and an improved detectivity of 3.1 × 1013 Jones under 40.0 µW cm−2 of a 405 nm laser. [ABSTRACT FROM AUTHOR]

Universal platforms to analyze biomolecules using sensor devices can address critical diagnostic challenges. Sensor devices like electrical-based field-effect transistors play an essential role in sensing biomolecules by charge probing. Graphene-based devices are more suitable for these applications. It has been previously reported that Graphene Field-Effect Transistor (GFET) devices detect DNA hybridization, pH sensors, and protein molecules. Graphene became a promising material for electrical-based field-effect transistor devices in sensing biomarkers, including biomolecules and proteins. In the last decade, FET devices have detected biomolecules such as DNA molecules, pH, glucose, and protein. These studies have suggested that the reference electrode is placed externally and measures the transfer characteristics. However, the external probing method damages the samples, requiring safety measurements and a substantial amount of time. To control this problem, the graphene field-effect transistor (GFET) device is fabricated with an inbuilt gate that acts as a reference electrode to measure the biomolecules. Herein, the monolayer graphene is exfoliated, and the GFET is designed with an in-built gate to detect the Interleukin-6 (IL-6) protein. IL-6 is a multifunctional cytokine which plays a significant role in immune regulation and metabolism. Additionally, IL-6 subsidizes a variability of disease states, including many types of cancer development, and metastasis, progression, and increased levels of IL-6 are associated with a higher risk of cancer and can also serve as a prognostic marker for cancer. Here, the protein is desiccated on the GFET device and measured, and Dirac point shifting in the transfer characteristics systematically evaluates the device's performance. Our work yielded a conductive and electrical response with the IL-6 protein. This graphene-based transducer with an inbuilt gate gives a promising platform to enable low-cost, compact, facile, real-time, and sensitive amperometric sensors to detect IL-6. Targeting this pathway may help develop treatments for several other symptoms, such as neuromyelitis optica, uveitis, and, more recently, COVID-19 pneumonia. [ABSTRACT FROM AUTHOR]

In this study, we investigated the gas-sensing mechanism in bottom-gate organic field-effect transistors (OFETs) using poly(triarylamine) (PTAA). A comparison of different device architectures revealed that the top-contact structure exhibited superior gas-sensing performance in terms of field-effect mobility and sensitivity. The thickness of the active layer played a critical role in enhancing these parameters in the top-contact structure. Moreover, the distance and pathway for charge carriers to reach the active channel were found to significantly influence the gas response. Additionally, the surface treatment of the SiO2 dielectric with hydrophobic self-assembled mono-layers led to further improvement in the performance of the OFETs and gas sensors by effectively passivating the silanol groups. Under optimal conditions, our PTAA-based gas sensors achieved an exceptionally high response (>200%/ppm) towards NO2. These findings highlight the importance of device and interface engineering for optimizing gas-sensing properties in amorphous polymer semiconductors, offering valuable insights for the design of advanced gas sensors. [ABSTRACT FROM AUTHOR]

Ferroelectric (FE) control of magnetism at nanoscale, for instance, FE control of the polarity of spin‐polarized current is crucial for technological advances in magnetoelectric and spintronic applications. However, this fascinating functionality has not been reported in nanoscale systems yet. Herein, a new class of FE/A‐type antiferromagnetic heterobilayer/FE van der Waals (vdW) multiferroic structures is found, in which the FE control of polarity of spin‐polarized current is found possible. Take Sc2CO2/CrSiTe3/CrGeTe3/Sc2CO2 heterostructure as a successful example. First‐principles calculations reveal that its polarity of half‐metallicity can be switched by flipping the FE polarization orientation. Meanwhile, device transport simulation shows that its up/down spin current transmission ratio is as large as 0.1 × 103 at P→↑↑\[\mathop {\rm{P}}\limits^ \to \uparrow \uparrow \] Sc2CO2 configuration and is only 2.6 × 10−3 at P→↓↓$\mathop {\rm{P}}\limits^ \to \downarrow \downarrow $ Sc2CO2 configuration in the vdW multiferroic heterostructures. Essentially, it stems from the reversible FE switch of the internal electric field across the CrSiTe3/CrGeTe3 heterobilayer and the FE control of the interfacial effect between Sc2CO2 and Cr(Si/Ge)Te3 layers. This work opens a direction for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as spin field‐effect transistors. [ABSTRACT FROM AUTHOR]

Abstract The versatility of properties displayed by two‐dimensional electron gases (2DEGs) at oxide interfaces has fostered intense research in hope of achieving exotic electromagnetic effects in confined systems. Of particular interest is the recently discovered superconducting state appearing in (111)‐oriented KTaO3 interfaces, with a critical temperature Tc≈2 K, almost 10 times higher than that of SrTiO3‐based 2DEGs. Just as in SrTiO3‐based 2DEGs, fabricating devices in this new system is a technical challenge due to the fragility of the 2DEG and the propensity of bulk KTaO3 to become conducting outside the devices upon adventitious oxygen vacancy doping. Here, three different techniques are presented for patterning Hall bars in AlOx/KTaO3 (111) heterostructures. The devices show superconducting transitions ranging from 1.3 to 1.78 K, with limited degradation from the unpatterned thin film, and enable an efficient tuning of the carrier density by electric field effect. The array of techniques allows for the definition of channels with a large range of dimensions for the design of various kinds of devices to explore the properties of this system down to the nanoscale.

The debye length is a measure of the distance over which the electric field of a charged particle decays in an electrolyte solution. If the binding of the analyte to the surface of the transducer is too far away from the surface, the electric field to the analyte may decay over a distance greater than the debye length thereby reducing the sensitivity of the measurement. In this context, this study has developed a simple one‐step protein immobilization strategy to covalently attach proteins on the sensor surface. Our binding strategy, which uses hydrogen peroxide (H2O2) ensures that the analyte is attached as close as possible to the transducer surface. This study evaluates our findings by comparing our strategy with silane chemistry and elucidating the debye length effects with colorimetric assays and field effect devices. Additionally, as a case study, we also evaluated the performance of our methodology for the detection of glucose oxidation by a field effect device. Overall, the developed immobilization strategy avoids the effects of the debye length and improves the performance of the biosensor. [ABSTRACT FROM AUTHOR]

The technology development, combined with chip size reductions, has significantly increased power density. Furthermore, the power limitation in portable devices has increased the importance of power consumption considerably. Approximate computing as an emerging paradigm leverages the error resiliency of applications to decrease power consumption. In this paper, we propose four approximate 4:2 compressors. We utilize the gate diffusion input to achieve significant area reduction in the proposed compressors. Afterward, we employ these compressors in the structure of Dadda multipliers. Compared to the state-of-the-art works, the proposed compressors result in, on average, 45% and 42% higher accuracy and lower area, respectively. Circuit simulations were carried out at a 32-nm carbon nanotube field-effect transistor technology node by HSPICE. The comparisons between our proposed compressors and exact compressor indicate that there has been an average improvement of 55%, 60% and 46% in the number of transistors, power consumption, and delay, respectively. In addition, the proposed multipliers were used in three image processing applications, including image multiplication, sharpening, and smoothing. The results show up to 46% and 70% improvement in the mean structure similarity index metric and peak signal-to-noise ratio compared to the state-of-the-art. [ABSTRACT FROM AUTHOR]

This paper presents a comprehensive investigation of the electrical properties of a heterojunction tunnel field effect transistor with enhanced electrical tunneling current. The proposed device structure incorporates an extended source region and two parallel channels positioned above and below the source region. This configuration effectively amplifies the tunneling area, leading to a significant improvement in the on-state current. Moreover, the inclusion of an embedded oxide region between the source and drain regions confers the device with a high resistance to short-channel effects. The combination of materials in both the source and channel region results in a staggered band alignment at the tunneling junction. This specific configuration leads to a lower threshold voltage for the initiation of tunneling. The impact of critical design parameters on the device performance has been thoroughly examined. A 2D variation matrix has been developed to compute the threshold voltage and on-state current variation based on the source doping density and gate workfunction, which serve as essential design parameters to optimize the electrical performance of the device. Furthermore, the device has achieved a unity current-ratio frequency of 300 GHz indicating its suitability for highfrequency applications. Additionally, the proposed structure provides an on-state current of 2.24×10-4 (A/µm), an offstate current of 1.24×10-15 (A/µm), an on/off current ratio of 1.81×1011, and a subthreshold swing of 5 (mV/dec). These characteristics make the device viable for energy-efficient, high-speed digital circuits. [ABSTRACT FROM AUTHOR]

The article presents several news on Artificial Intelligence's use to identify potent antibiotics against the superbug Acinetobacter baumannii. Topics discussed include the potential of seaweed-derived material for thermochemical heat storage and a new light-absorbing material with applications in various technologies, from bioimaging to self-driving cars and solar cells.

One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel materials in the field-effect transistor devices and probably, a better interconnect than conventional copper with higher current density and resistance to electro-migration with sustainable down-scaling. We report a theoretically predicted halide based 1D few-chain atomic thread, PdBr2, isolable from its bulk which crystallizes in a monoclinic space group C2/c. Liquid phase exfoliated nanowires with mean length (20 ± 1)μm transferred onto a SiO2/Si wafer with a maximum aspect ratio (length:width) of ≈ 5000 confirm the lower cleavage energy perpendicular to the chain direction. Moreover, an isolated nanowire can also sustain a current density of 200 MA/cm2, which is atleast one-order higher than typical copper interconnects. However, local transport measurement via the conducting atomic force microscopy (CAFM) tip along the cross direction of the single chain records a much lower current density due to the anisotropic electronic band structure. While 1D nature of the nanoobject can be linked with a non-trivial collective quantum behavior, vdW nature could be beneficial for possible pathways in an interconnect fabrication strategy with better control of placement in an integrated circuit. [ABSTRACT FROM AUTHOR]

One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel materials in the field-effect transistor devices and probably, a better interconnect than conventional copper with higher current density and resistance to electro-migration with sustainable down-scaling. We report a theoretically predicted halide based 1D few-chain atomic thread, PdBr2, isolable from its bulk which crystallizes in a monoclinic space group C2/c. Liquid phase exfoliated nanowires with mean length (20 ± 1)μm transferred onto a SiO2/Si wafer with a maximum aspect ratio (length:width) of ≈ 5000 confirm the lower cleavage energy perpendicular to the chain direction. Moreover, an isolated nanowire can also sustain a current density of 200 MA/cm2, which is atleast one-order higher than typical copper interconnects. However, local transport measurement via the conducting atomic force microscopy (CAFM) tip along the cross direction of the single chain records a much lower current density due to the anisotropic electronic band structure. While 1D nature of the nanoobject can be linked with a non-trivial collective quantum behavior, vdW nature could be beneficial for possible pathways in an interconnect fabrication strategy with better control of placement in an integrated circuit. [ABSTRACT FROM AUTHOR]