303 results on '"Felix, Nelson M."'
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2. How metrology innovation delivers technology innovation: Nanosheets at the 2nm node
3. Morphology change and release of tin and lead micro-particles from substrates in hydrogen plasma
4. Particle contamination control by application of plasma
5. Spectral purity performance of high-power EUV systems
6. Welcome and Introduction to SPIE Conference 11609
7. EUV Lithography Perspective: from the beginning to HVM (Conference Presentation)
8. High-Z metal-based underlayer patterning for improving EUV stochastics (Conference Presentation)
9. Fundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch
10. Patterning Material Challenges for Improving EUV Stochastics
11. Overlay error statistics for multiple-exposure patterning
12. Electrical validation of the integration of 193i and DSA for sub-20nm metal cut patterning
13. EUV mask challenges and requirements for ultimate single exposure interconnects
14. The defect mitigation on EUV stack by track based technology
15. LCDU improvement of EUV-patterned vias with DSA
16. Fundamentals of resist stochastics effect for single-expose EUV patterning
17. Track based techniques to improve high-resolution EUV patterning defectivity
18. Study of resist hardmask interaction through surface activation layers
19. Inorganic hardmask development for extreme ultraviolet patterning
20. Defect detection strategies and process partitioning for SE EUV patterning (Conference Presentation)
21. Inorganic Hardmask Development for EUV Patterning
22. CNT pellicles: imaging results of the first full-field EUV exposures
23. Alternative developer solution/process for EUV lithography: ethyltrimethylammonium hydroxide (ETMAH)
24. Measuring EUV mask 3D effects with hyperspectral Zernike phase contrast
25. Lensless EUV mask inspection for anamorphic patterns
26. Morphology change and release of tin and lead micro-particles from substrates in hydrogen plasma
27. Particle removal tool to repair particle defects on EUV reticles
28. Design considerations for chemically amplified EUV resist materials
29. The development progress of the high power LPP-EUV light source using a magnetic field
30. Progress in EUV resist screening towards the deployment of high-NA lithography
31. Laser-assisted discharge produced plasma (LDP) EUV source for actinic patterned mask inspection (APMI)
32. Defect repairs for the extreme ultraviolet mask
33. Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations
34. 3D modeling of EUV photoresist using the multivariate Poisson propagation model
35. Chemically-amplified backbone scission (CABS) resist for EUV lithography
36. Line width roughness variation and printing failures caused by stochastic effect at extreme-ultraviolet exposure
37. Plasma etch solutions for EUV patterning: defect challenges
38. CNT EUV pellicle tunability and performance in a scanner-like environment
39. 28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography
40. Optimization of the EUV contact layer process for 7nm FPGA production
41. Novel processing technologies for advanced EUV patterning materials using metal oxide resist (MOR)
42. Metal layer single EUV expose at pitch 28 nm: how bright field and NTD resist advantages align
43. Extending 0.33 NA EUVL to 28 nm pitch using alternative mask and controlled aberrations
44. EUV single exposure via patterning at aggressive pitch
45. Regression analysis of photodecomposable quencher concentration effects on chemical gradient in chemically amplified extreme ultraviolet resist processes
46. NXE:3400 OPC process monitoring: model validity vs process variability
47. Optical design of EUV attenuated PSM for contact-hole applications
48. Development of amorphous silicon based EUV hardmasks through physical vapor deposition
49. Coater/developer based techniques to improve high-resolution EUV patterning defectivity
50. Development of TiO2 containing hardmasks through plasma-enhanced atomic layer deposition
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