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The article analyzes the theoretical aspects of protection as directly subjective civil rights and defines them within the framework of civil relations regarding the information on one's health. A clearer and complete description of the features of the realization of the right to information on one's health in the normatively established system of protection of subjective rights of a person has been obtained. It has been determined that the protection of the right to information on one's health is exercised freely, and the failure of a person to exercise the right to protection is not a ground for termination of this right. It is noted that during the protection of their violated right to health information, the authorized person may perform certain actions that are not related to the appeal to the competent state bodies and are a non-jurisdictional form of protection. The list of actions of an individual to protect the right to information on one’s health in the case of a non-jurisdictional form of protection of the above-mentioned right has been systematized.

Dynamic nuclear polarization (DNP) is well recognized as being important in spintronics and quantum-information processing. DNP gives rise to high nuclear spin polarization that not only can prolong electron-spin lifetime by generating an Overhauser field (OHF), but also has fertilized the idea to explore nuclear spin qubits. In strained quantum-dot structures (QDSs), a nuclear spin is coupled to a strain field via its quadrupole moment. It has been shown that such nuclear quadrupole interaction (NQI) can be used to achieve appreciable DNP and hence electron-spin polarization. Here, we uncover magneto-optical anomalies from a series of laterally arranged (In,Ga)As QDSs that arise from the NQI and DNP in these nanostructures. We find that the principal axis of NQI in symmetry-lowered QDSs significantly deviates from the growth direction, resulting in tilting of OHF with an angle exceeding 37 degrees. The resulting transverse component of OHF is probed with respect to the crystallographic orientations and its influence on the DNP and ensemble spin dephasing is analyzed. We show that a high-symmetry electronic confinement potential for excitons does not guarantee a high-symmetry NQI for nuclei within the same nano-object, thereby calling for correlated optimization in the symmetry of the electronic confinement potential and that of the nuclear spin bath. Our results underline the role of oblique NQI in electron-spin decoherence and depolarization, which has so far largely been overlooked. This work thus sheds light on design rules for engineering the electronic and spin landscape of QDSs for better performance of DNP desirable for applications in spintronics and quantum computation., Funding Agencies|Linkoping University; Swedish Research CouncilSwedish Research Council [2016-05091]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

The formation of ternary hydrogen-rich hydrides involving the first-row transition metals TM = Fe and Co in high oxidation states is demonstrated from in situ synchrotron diffraction studies of reaction mixtures NaH–TM–H2 at p ≈ 10 GPa. Na3FeH7 and Na3CoH6 feature pentagonal bipyramidal FeH73– and octahedral CoH63– 18-electron complexes, respectively. At high pressure, high temperature (300 < T ≤ 470 °C) conditions, metal atoms are arranged as in the face-centered cubic Heusler structure, and ab initio molecular dynamics simulations suggest that the complexes undergo reorientational dynamics. Upon cooling, subtle changes in the diffraction patterns evidence reversible and rapid phase transitions associated with ordering of the complexes. During decompression, Na3FeH7 and Na3CoH6 transform to tetragonal and orthorhombic low pressure forms, respectively, which can be retained at ambient pressure. The discovery of Na3FeH7 and Na3CoH6 establishes a consecutive series of homoleptic hydrogen-rich complexes for first-row transition metals from Cr to Ni.

The structural and vibrational properties of ammonium borohydride, NH4BH4, have been examined by first-principles density functional theory (DFT) calculations and inelastic neutron scattering (INS). The H disordered crystal structure of NH4BH4 is composed of the tetrahedral complex ions NH4+ and BH4-, which are arranged as in the fcc NaCl structure and linked by intermolecular dihydrogen bonding. Upon cooling, the INS spectra revealed a structural transition between 45 and 40 K. The reversible transition occurs upon heating between 46 and 49 K. In the low-temperature form reorientational dynamics are frozen. The libration modes for BH4- and NH4+ are near 300 and 200 cm(-1), respectively. Upon entering the fcc high-temperature form, NH4+ ions attain fast reorientational dynamics, as indicated in the disappearance of the NH4+ libration band, whereas BH4- ions become significantly mobile only at temperatures above 100 K. The vibrational behavior of BH4- ions in NH4BH4 compares well to the heavier alkali metal borohydrides, NaBH4-CsBH4. DFT calculations revealed a nondirectional nature of the dihydrogen bonding in NH4BH4 with only weak tendency for long-range order. Different rotational configurations of complex ions appear quasi-degenerate, which is reminiscent of glasses., Funding Agencies|Nordforsk within the project FunHy; Swedish research council (VR)Swedish Research Council; Carl Tryggers Stiftelse (CTS) for Vetenskaplig Forskning; Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]

The complex transition metal hydride Mg3CrH8 has been previously synthesized using high pressure conditions. It contains the first group 6 homoleptic hydrido complex, [Cr(II)H-7](5-). Here, we investigated the formation of Mg3CrH8 by in situ studies of reaction mixtures of 3MgH(2)-Cr-H-2 at 5 GPa. The formation of the known orthorhombic form (o-Mg3CrH8) was noticed at temperatures above 635 degrees C, albeit at a relatively slow rate. At temperatures around 750 degrees C a high temperature phase formed rapidly, which upon slow cooling converted into o-Mg3CrH8. The phase transition at high pressures occurred reversibly at similar to 735 degrees C upon heating and at similar to 675 degrees C upon slow cooling. Upon rapid cooling, a monoclinic polymorph (m-Mg3CrH8) was afforded which could be subsequently recovered and analyzed at ambient pressure. m-Mg3CrH8 was found to crystallize in P2(1)/n space group (a = 5.128 angstrom, b = 16.482 angstrom, c = 4.805 angstrom, beta = 90.27 degrees). Its structure elucidation from high resolution synchrotron powder diffraction data was aided by first-principles DFT calculations. Like the orthorhombic polymorph, m-Mg3CrH8 contains pentagonal bipyramidal complexes [CrH7](5-) and interstitial H-. The arrangement of metal atoms and interstitial H- resembles closely that of the high pressure orthorhombic form of Mg3MnH7. This suggests similar principles of formation and stabilization of hydrido complexes at high pressure and temperature conditions in the Mg-Cr-H and Mg-Mn-H systems. Calculated enthalpy versus pressure relations predict o-Mg3CrH8 being more stable than m-Mg3CrH8 by 6.5 kJ/mol at ambient pressure and by 13 kJ/mol at 5 GPa. The electronic structure of m-Mg3CrH8 is very similar to that of o-Mg3CrH8. The stable 18-electron complex [CrH7](5-) is mirrored in the occupied states, and calculated band gaps are around 1.5 eV.

The MgMnH system was investigated by in situ high pressure studies of reaction mixtures MgH2MnH2. The formation conditions of two complex hydrides with composition Mg3MnH7 were established. Previously known hexagonal Mg3MnH7 (h-Mg3MnH7) formed at pressures 1.52 GPa and temperatures between 480 and 500 degrees C, whereas an orthorhombic form (o-Mg3MnH7) was obtained at pressures above 5 GPa and temperatures above 600 degrees C. The crystal structures of the polymorphs feature octahedral [Mn(I)H-6](5) complexes and interstitial H-. Interstitial H- is located in trigonal bipyramidal and square pyramidal interstices formed by Mg2+ ions in h- and o-Mg3MnH7, respectively. The hexagonal form can be retained at ambient pressure, whereas the orthorhombic form upon decompression undergoes a distortion to monoclinic Mg3MnH7 (m-Mg3MnH7). The structure elucidation of o- and m-Mg3MnH7 was aided by first-principles density functional theory (DFT) calculations. Calculated enthalpy versus pressure relations predict m- and o-Mg3MnH7 to be more stable than h-Mg3MnH7 above 4.3 GPa. Phonon calculations revealed o-Mg3MnH7 to be dynamically unstable at pressures below 5 GPa, which explains its phase transition to m-Mg3MnH7 on decompression. The electronic structure of the quenchable polymorphs h- and m-Mg3MnH7 is very similar. The stable 18-electron complex [MnH6](5-) is mirrored in the occupied states, and calculated band gaps are around 1.5 eV. The study underlines the significance of in situ investigations for mapping reaction conditions and understanding phase relations for hydrogen-rich complex transition metal hydrides.

Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorporation of nitrogen in GaAs NWs leads to formation of three-dimensional confining potentials caused by short-range fluctuations in the nitrogen composition, which are superimposed on long-range alloy disorder. The resulting localized states exhibit a quantum-dot like electronic structure, forming optically active states in the GaNAs shell. By directly correlating the structural and optical properties of individual NWs, it is also shown that formation of the localized states is efficient in pure zinc-blende wires and is further facilitated by structural polymorphism. The light emission from these localized states is found to be spectrally narrow (similar to 50-130 mu eV) and is highly polarized (up to 100%) with the preferable polarization direction orthogonal to the NW axis, suggesting a preferential orientation of the localization potential. These properties of self-assembled nano-emitters embedded in the GaNAs-based nanowire structures may be attractive for potential optoelectronic applications., Funding agencies: Financial support by the Swedish Energy Agency (grant # P40119-1) and the Swedish Research Council (grants # 2015-05532 and 2008-405) is greatly appreciated. The Knut and Alice Wallenberg Foundation is gratefully acknowledged for support of the Electron Microscopy laboratory in Linkoping.

GaNAs-based nanowires (NWs) form a novel material system of potential importance for applications in advanced optoelectronic and photonic devices, thanks to the advantages provided by band-structure engineering, one-dimensional architecture and the possibility to combine them with mainstream silicon technology. In this work we utilize the micro-Raman scattering technique to systematically study the structural properties of such GaAs/GaNAs core/shell NW structures grown by molecular beam epitaxy on a Si substrate. It is shown that the employed one-dimensional architecture allows the fabrication of a GaNAs shell with a low degree of alloy disorder and weak residual strain, at least within the studied range of nitrogen (N) compositions [N]Â

Comprehensive studies of GaAs/GaNAs coaxial nanowires grown on Si substrates are carried out by temperature-dependent photoluminescence (PL) and PL excitation, to evaluate effects of the shell formation on carrier recombination. The PL emission from the GaAs core is found to transform into a series of sharp PL lines upon radial growth of the GaNAs shell, pointing toward the formation of localization potentials in the core. This hampers carrier transfer at low temperatures from the core in spite of its wider bandgap. Carrier injection from the core to the optically active shell is found to become thermally activated at Tamp;gt;60 K, which implies that the localization potentials are rather shallow. (C) 2016 American Vacuum Society., Funding Agencies|Swedish Energy Agency [P40119-1]; Swedish Research Council [2015-05532]

GaNP-based nanowires (NWs) represent a novel material system that has a great potential in a variety of optoelectronic and photonic applications. In this paper we review our recent results showing that advantages provided by alloying with nitrogen can be realized and even further enhanced in novel coaxial GaNP NWs grown on Si substrates. Based on combined mu-photoluminescence and optically detected magnetic resonance measurements, we identify the optimum structural design of these nanowires. We also demonstrate that these novel structures have potential as nanoscale light sources of linearly polarized light.

Fine-structure splitting (FSS) of excitons in semiconductor nanostructures is a key parameter that has significant implications in photon entanglement and polarization conversion between electron spins and photons, relevant to quantum information technology and spintronics. Here, we investigate exciton FSS in self-organized lateral InAs/GaAs quantum-dot molecular structures (QMSs) including laterally aligned double quantum dots (DQDs), quantum-dot clusters (QCs), and quantum rings (QRs), by employing polarization-resolved microphotoluminescence (μPL) spectroscopy. We find a clear trend in FSS between the studied QMSs depending on their geometric arrangements, from a large FSS in the DQDs to a smaller FSS in the QCs and QRs. This trend is accompanied by a corresponding difference in the optical polarization directions of the excitons between these QMSs, namely, the bright-exciton lines are linearly polarized preferably along or perpendicular to the [11̅0] crystallographic axis in the DQDs that also defines the alignment direction of the two constituting QDs, whereas in the QCs and QRs, the polarization directions are randomly oriented. We attribute the observed trend in the FSS to a significant reduction of the asymmetry in the lateral confinement potential of the excitons in the QRs and QCs as compared with the DQDs, as a result of a compensation between the effects of lateral shape anisotropy and piezoelectric field. Our work demonstrates that FSS strongly depends on the geometric arrangements of the QMSs, which effectively tune the degree of the compensation effects and are capable of reducing FSS even in a strained QD system to a limit similar to strain-free QDs. This approach provides a pathway in obtaining high-symmetry quantum emitters desirable for realizing photon entanglement and spintronic devices based on such nanostructures, utilizing an uninterrupted epitaxial growth procedure without special requirements for lattice-matched materials combinations, spec

Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (mu-PL) and mu-PL excitation (mu-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation. (C) 2014 AIP Publishing LLC.

Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp(2)-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.

The III-V semiconductor nanowires (NWs) have a great potential for applications in a variety of future electronic and photonic devices with enhanced functionality. In this work, we employ polarization resolved micro-photoluminescence (µ-PL) spectroscopy to study polarization properties of light emissions from individual GaNP and GaP/GaNP core/shell nanowires (NWs) with average diameters ranging between 100 and 350 nm. We show that the near-band-edge emission, which originates from the GaNP regions of the NWs, is strongly polarized (up to 60 % at 150 K) in the direction perpendicular to the NW axis. The polarization anisotropy can be retained up to room temperature. This polarization behavior, which is unusual for zinc blende NWs, is attributed to local strain in the vicinity of the N-related centers participating in the radiative recombination and to preferential alignment of their principal axis along the growth direction. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to tailor the polarization anisotropy of III-V nanowires, advantageous for their applications as nanoscale emitters of polarized light.

Semiconductor nanostructures, such as one-dimensional nanowires (NWs) and zerodimensional quantum dots (QDs), have recently gained increasing interest due to their unique physical properties that are found attractive for a wide variety of applications ranging from gas sensing and spintronics to optoelectronics and photonics. Here, especially promising are nanostructures based on compound semiconductors, including ZnO, GaNP and GaAs/InAs. For examples, ZnO NWs are used for gas sensing. They also serve as an active material in UV light sources, owing to its wide band gap combined with a large exciton binding energy. GaNP NWs are a novel material system that allows realization of efficient amber lightemitting diodes and novel intermediate-band solar cells with an anticipated high efficiency. InAs QDs formed in the GaAs matrix are efficient emitters of near IR light and can be utilized in future spin-functional devices for applications in spintronics and quantum information processing. The realization of the full potential of semiconductor nanostructures requires detailed knowledge of their electronic and structural properties which is far from being complete at the present stage of research. In this thesis we address some of these important issues using optical characterization techniques, such as micro-Raman and microphotoluminescence (μ-PL) spectroscopies. In paper I we use Raman spectroscopy to investigate effects of metallization by nickel on electronic and structural properties of ZnO/Ni core/shell NWs. We show that coating ZnO NWs with Ni shells causes passivation of surface states whereas subsequent annealing leads to formation of new defects, evident from appearance of the corresponding local vibrational modes. Ni coating is also found to strongly enhance the multiline Raman signal involving A1(LO) phonon scattering, based on the performed resonant Raman studies. This is attributed to an enhanced Fröhlich interaction at the ZnO/Ni heterointerface combined with, The series name Linköping Studies in Science and Technology Licentiate Thesis is incorrect. The correct series name is Linköping Studies in Science and Technology Thesis.

Comprehensive characterization of defects formed in bulk ZnO single crystals co-implanted with N and Zn as well as N and O atoms is performed by means of optically detected magnetic resonance (ODMR) complemented by Raman and photoluminescence (PL) spectroscopies. It is shown that in addition to intrinsic defects such as Zn vacancies and Zn interstitials, several N-related defects are formed in the implanted ZnO. The prevailed configuration of the defects is found to depend on the choices of the co-implants and also the chosen annealing ambient. Specifically, co-implantation with O leads to the formation of (i) defects responsible for local vibrational modes at 277, 511, and 581 cm−1; (ii) a N-related acceptor with the binding energy of 160 ± 40 meV that is involved in the donor-acceptor pair emission at 3.23 eV; and (iii) a deep donor and a deep NO acceptor revealed from ODMR. Activation of the latter defects is found to require post-implantation annealing in nitrogen ambient. None of these defects are detected when N is co-implanted with Zn. Under these conditions, the dominant N-induced defects include a deep center responsible for the 3.3128 eV PL line, as well as an acceptor center of unknown origin revealed by ODMR. Formation mechanisms of the studied defects and their role in carrier recombination are discussed., Funding Agencies|Swedish Research Council|621-2010-3971

Rhombohedral Boron Nitride layers were grown on sapphire substrate in a hot-wall CVD reactor. The characterization of those layers is reported and the results are discussed in correlation with the various growth parameters used.

Structural properties of ZnO/Ni core/shell nanowires (NWs) are studied in detail by means of Raman spectroscopy. It is shown that formation of the Ni shell leads to passivation of surface states responsible for the observed enhanced intensity of the A1(LO) Raman mode of the bare ZnO NWs. It also causes appearance of 490 cm−1 and 710 cm−1 modes that are attributed to local vibrational modes of a defect/impurity (or defects/impurities). This defect is concluded to be preferably formed in annealed ZnO/Ni NWs and is unlikely to contain a Ni atom, as the same Raman modes were also reported for the Ni-free ZnO nanostructures. From our resonant Raman studies, we also show that the ZnO/Ni core/shell NWs exhibit an enhanced Raman signal with a multiline structure involving A1(LO). This observation is attributed to combined effects of an enhanced Fröhlich interaction at the ZnO/Ni heterointerface and coupling of the scattered light with local surface plasmons excited in the Ni shell. The plasmonic effect is also suggested to allow detection of carbon-related species absorbed at the surface of a single ZnO/Ni NW, promising for applications of such structures as efficient nano-sized gas sensors.

Optically detected magnetic resonance (ODMR) complemented by photoluminescence measurements is used to evaluate optical and defect properties of ZnO nanowires (NWs) grown by rapid thermal chemical vapor deposition. By monitoring visible emissions, several grown-in defects are revealed and attributed to Zn vacancies, shallow (but not effective mass) donor and exchange-coupled pairs of Zn vacancies and Zn interstitials. It is also found that the intensity of the donor-related ODMR signals is substantially lower in the NWs compared with that in bulk ZnO. This may indicate that formation of native donors is suppressed in NWs, which is beneficial for achieving p-type conductivity., Funding Agencies|Swedish Research Council|621-2010-3971|World-Class University Programme through NRF||Korean government (MEST)|R31-10026|Swedish government strategic research area in materials science on functional materials at Linkoping University|2009-00971