207 results on '"Fjeldly, Tor A."'
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2. Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques
3. HEMT Modelling
4. Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures
5. Frontiers in Electronics
6. PHYSICS BASED ANALYTICAL MODELING OF NANOSCALE MULTIGATE MOSFETs
7. Capacitance modeling of short-channel double-gate MOSFETs
8. Compact subthreshold current modeling short-channel nanoscale double-gate MOSFET
9. Precise modeling framework for short-channel double-gate and gate-all-around MOSFETs
10. 2D Modeling of nanoscale DG SOI MOSFETs in and near the subthreshold regime
11. A secure approach to distributed internet-enabled metrology
12. Compact-modeling solutions for nanoscale double-gate and gate-all-around MOSFETs
13. SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors
14. Conducting laboratory experiments over the Internet
15. Physics and Modeling of Poly-, Micro-, and Nano-Si TFTs
16. CMOS RF Modeling, Characterization and Applications
17. A new charge conserving capacitance model for GaAs MESDET's
18. Advances in Surface Acoustic Wave Technology, Systems and Applications
19. Advances In Surface Acoustic Wave Technology, Systems And Applications
20. BEYOND SPICE, A REVIEW OF MODERN ANALOG CIRCUIT SIMULATION TECHNIQUES
21. THIN-FILM TRANSISTOR MODELING
22. SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES
23. Unified physical I-V model including self-heating effect for fully depleted SOI/MOSFET's
24. Enhanced GaAs MESFET CAD model for a wide range of temperatures
25. Unified quasi-static MOSFET capacitance model
26. Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFET's
27. Monte Carlo simulation of electron transport in mercury cadmium telluride
28. SIMULATION AND MODELING OF COMPOUND SEMICONDUCTOR DEVICES
29. METAL SEMICONDUCTOR FIELD EFFECT TRANSISTORS
30. ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model
31. Unified model for short-channel poly-Si TFTs
32. Self-consistent theory including nonstationary phenomena for carrier transport in the AlGaAs/GaAs high electron mobility transistor.
33. A charge-based capacitance model for AlGaAs/GaAs HEMTs
34. Determination of Surface Donor States Properties and Modeling of InAlN/AlN/GaN Heterostructures
35. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures
36. Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states
37. Erratum: “Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures” [J. Appl. Phys. 113, 014505 (2013)]
38. PHYSICS BASED ANALYTICAL MODELING OF NANOSCALE MULTIGATE MOSFETs
39. Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs
40. PREFACE
41. Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
42. Analysis of Drain-Current Nonlinearity Using Surface-Potential-Based Model in GaAs pHEMTs
43. Modeling and Simulation Methodology for SOA-Aware Circuit Design in DC and Pulsed-Mode Operation of HV MOSFETs
44. Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures
45. Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors
46. Assessment of NBTI in Presence of Self-Heating in High- $k$ SOI FinFETs
47. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices
48. A Surface-Potential-Based Compact Model for Study of Non-Linearities in AlGaAs/GaAs HEMTs
49. Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures
50. Modeling of coupling mechanisms and frequency separation in double disk resonators
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