Search

A physics-based compact subthreshold current model is described for short-channel nanoscale double-gate MOSFETs. The electrostatics is dominated by capacitive coupling between the body electrodes, the potential is obtained as an analytical solution of the 2-D Laplace equation and the current modeling is based on drift-diffusion theory.

The article discusses a precise modeling framework for short-channel nanoscale double-gate (DG) and gate-all-around MOSFETs. A wide range of bias voltages from subthreshold to strong inversion are found to be covered by this framework and the drain current calculated by this model using a drift-diffusion transport mechanism are found to be in good agreement with the numerical simulations.

Developments in compact-modeling principles and solutions for nanoscale double-gate (DG) and gate-all-around (GAA) MOSFETs are presented and reviewed. Techniques are presented to extend these compact models to the high-frequency regime and to study the main high-frequency parameters and characteristics such as noise.

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physics-based formalism is used for describing the radiation effects within the framework of the Gummel-Poon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE parameters is outlined, from which a simplifed radiation model is established. The latter is presented and implemented in AIM-Spice, and it is shown to agree quite well with experiments. Dynamic effects including annealing are also discussed. Index Terms--Annealing, bipolar junction transistor, displacement damage, neutron radiation effects, SPICE modeling.

We report on an interactive on-line laboratory for remote education called Automated Internet Measurement Laboratory (AIM-Lab), which utilizes the Internet and the World Wide Web. AIM-Lab allows efficient use of laboratory equipment in both regular and laboratory courses, especially in a distance-learning environment. Our approach is based on newly developed software packages and commercial measurement equipment. As an example, we describe an application of remote experiments on semiconductor device characterization, which can be freely accessed on the Web. Index Terms - AIM-spice, automated internet measurement (AIM) laboratory, distance learning, internet, on-line laboratory, remote experiment, semiconductor device characterization.

Communications research using quasi-static approximation methods and channel charge partitioning has established a new charge conserving capacitance model for Gallium-Arsenide (GaAs) metal semiconductor field effect transistors. The model works well at high and low voltages and can be used in circuit simulator and computer aided design applications.

A unified, physical I-V model for fully depleted silicon-on-insulator MOSFETs incorporates self-heating effect in a fully closed form to render the model applicable to circuit simulators. It explains drain induced conductivity enhancement and barrier lowering, channel length modulation, and parasitic series resistance. A single continuous expression defines the subthreshold, near-threshold, and the above-threshold regions of operation. The model ensures uninterrupted transition of current and conductance from the linear to the saturation zones. Its wide applicability is discussed.

A new GaAs MESFET model accurately describes the GaAS MESFET's above-threshold and sub-threshold characteristics in the temperature range of 77 Kelvin to 350 degrees celsius. The model can be implemented in computer-aided design (CAD) software packages. A single continuous, analytical expression represents the current-voltage characteristics for all regimes of operation. Accurate description of output resistance and transconductance by the model leads to its suitability for analog CAD.

A unified quasi-static capacitance-voltage model for metal oxide semiconductor field effect transistors is presented. Derived from the Unified Charge Control Model, it is based on an association between the bulk charge voltage-dependencies and the usual parameters considered during device modeling. Numerical results indicate a good fit with experimental measurements and results obtained from the Berkeley short-channel IGFET model.

The electrical characteristics of short-channel metal oxide semiconductor field effect transistors during subthreshold operation are modeled together with the threshold voltage change related to the drain-induced barrier lowering mechanism. The derived analytical model is based on charge-sharing theory and is used to develop expressions for the drain-bias-induced depletion charge and its channel distribution.

Monte Carlo simulations were used to study the mobility and steady state velocity-field properties of electron transport in mercury cadmium telluride. Results show an increase in the screening length as the electric field increases, a dependence more predominant in low carrier concentrations. Degeneracy effects along with the screening length dependence on the distribution function were also found to affect electron mobilities and drift velocities despite low carrier concentrations.

Focuses on a study that developed an analytical formulation for carrier transport in the two-dimensional conducting channel of the aluminum gallium arsenide/gallium arsenide high electron mobility transistor (HEMT). Properties of the relaxation time approximation; Basic equations for the HEMT; Model calculations.