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918 results on '"Flandre, D."'

11. The shift of breakdown voltage for silicon membrane strip detectors resulting from surface avalanche.

Author

Peng, W., Sabri Alirezaei, I., André, N., Zeng, X., Bouterfa, M., Wang, B., Zeng, Y., and Flandre, D.

Subjects
BREAKDOWN voltage, MEMBRANE potential, STRAY currents, LEAK detectors, DETECTORS, SILICON diodes
Abstract

Silicon membrane strip photodetectors are fabricated based on thin silicon-on-insulator (SOI) wafers. The thin SOI wafer is realized by exploiting a thinning process on backside. Such detectors can be implemented in proton-beam position detection because its ultra-thin membrane substrate can reduce beam scattering and offer the considerable advantages of higher radiation hardness. A p-spray implantation process is typically performed at the silicon surface between the n + -strips in order to insulate them, without requiring an extra photolithographic mask. In this paper, the sources of leakage current in the detector are first studied by considering both activation energy and simulation analysis in Silvaco TCAD. While the device is operating below avalanche breakdown voltage, the Shockley–Read–Hall process and trap-assisted-tunneling process are dominantly contributing to leakage current. The dominant breakdown voltage is attributed to the premature breakdown in the junction of p − spray / n + region. The shift of this breakdown voltage under repeated avalanche processes is analyzed in-depth by both experiments and simulations, as a function of temperature and electrical stress conditions, which are introducing an important reliability problem. The electrical stress can be attributed to an increase in fixed charge density at the Si/ SiO 2 interface. The breakdown voltage finally increases by 4 V after successive avalanche breakdowns as a function of the applied excess bias voltage beyond breakdown voltage. [ABSTRACT FROM AUTHOR]

Published
2021
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12. Printed-Board Inductive Loop Topologies Performance for Partial Discharges Detection

Author

Imburgia, A., Kaziz, S., Romano, P., Flandre, D., Artale, G., Rizzo, G., Viola, F., Ala, G., and Tounsi, F.

Abstract

Partial discharges (PD) are localized breakdowns in the insulation within high-voltage (HV) equipment and can be a warning sign of potential future failure. Regular PD monitoring through preventive maintenance is essential to the reliability of many expensive HV apparatuses. Hence, the purpose of this work is to assess the performance of a novel class of multi-turn inductive loop sensors based on printed circuit board (PCB) to detect PD in free space. Based on their topology, three distinct inductive sensors, named meander, non-spiral, and spiral, are evaluated towards detecting in-lab corona, internal, and surface PDs. Through simulations and measurements, the low-frequency lumped-element circuit model for each of the three magnetic field probes was extracted. Experimental PRPD patterns showed that the three evaluated inductive loops could be effectively applied for online monitoring and recognition of PDs. The experimental results show that the single PD pulses detected by the three sensors have a typical PD pulse shape that is a damped sinusoidal function with frequency spectra spanning from 14.84 MHz to 46 MHz. The spiral sensor yielded the maximum sensitivity, while the meander topology produced the lowest.

Published
2024
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34. Comparative Study of Al2O3 and HfO2 for Surface Passivation of Cu(In,Ga)Se-2 Thin Films: An Innovative Al2O3/HfO2 Multistack Design

Author

SCAFFIDI, Romain, BULDU KOHL, Dilara, BRAMMERTZ, Guy, DE WILD, Jessica, KOHL, Thierry, BIRANT, Gizem, MEURIS, Marc, POORTMANS, Jef, Flandre, D, VERMANG, Bart, SCAFFIDI, Romain, BULDU KOHL, Dilara, BRAMMERTZ, Guy, DE WILD, Jessica, KOHL, Thierry, BIRANT, Gizem, MEURIS, Marc, POORTMANS, Jef, Flandre, D, and VERMANG, Bart

Subjects
multistacks, Al2O3, CIGS interface passivation, thin-film photovoltaics, HfO2
Abstract

In Cu(In,Ga)Se-2 (CIGS) thin-film solar cells, interface recombination is one of the most important limiting factors with respect to device performance. Herein, metal-insulator-semiconductor samples are used to investigate and compare the passivation effects of Al2O3 and HfO2 at the interface with CIGS. Capacitance-voltage-frequency measurements allow to qualitatively and quantitatively assess the existence of high negative charge density (Q (f) approximate to -10(12) cm(-2)) and low interface-trap density (D (it) approximate to 10(11) cm(-2) eV(-1)). At the rear interface of CIGS solar cells, these, respectively, induce field-effect and chemical passivation. A trade-off is highlighted between stronger field-effect for HfO2 and lower interface-trap density for Al2O3. This motivates the usage of Al2O3 to induce chemical passivation at the front interface of CIGS solar cells but raises the issue of its processing compatibility with the buffer layer. Therefore, an innovative Al2O3/HfO2 multistack design is proposed and investigated for the first time. Effective chemical passivation is similarly demonstrated for this novel design, suggesting potential decrease in recombination rate at the front interface in CIGS solar cells and increased efficiency. 300 degrees C annealing in N-2 environment enable to enhance passivation effectiveness by reducing D (it) while surface cleaning may reveal useful for alternative CIGS processing methods. This work received funding from the European Union's H2020 research and innovation program under grant agreement No. 715027. Supporting Information is available from the Wiley Online Library or fromthe author.

Published
2021

43. Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

Author

Gammon P.M., Chan C.W., Gity F., Trajkovic T., Kilchytska V., Fan L., Pathirana V., Camuso G., Ben Ali K., Flandre D., Mawby P.A., and Gardner J.W.

Subjects
Environmental sciences, GE1-350
Abstract

A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to silicon carbide (SiC). This novel silicon-on-silicon-carbide (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology (i.e device confinement, radiation tolerance, high and low temperature performance) with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance). Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

Published
2017
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48. Total-dose effects caused by high-energy neutrons and gamma rays in multiple-gate FETs

Author

Kilchytska, Valeriya, Alvarado, J., Collaert, N., Rooyakers, R., Militaru, O., Berger, G., and Flandre, D.

Subjects
Field-effect transistors -- Testing, Field-effect transistors -- Design and construction, Field-effect transistors -- Properties, Neutrons -- Influence, Neutrons -- Usage, Gamma rays -- Influence, Gamma rays -- Usage, Business, Electronics, Electronics and electrical industries
Published
2010

49. ULPFA: a new efficient design of a power-aware full adder

Author

Hassoune, I., Flandre, D., O'Connor, I., and Legat, J.-D.

Subjects
Adders (Electronics) -- Innovations, Adders (Electronics) -- Energy use, Integrated circuits -- Design and construction, Semiconductor chips -- Design and construction, Standard IC, Business, Computers and office automation industries, Electronics, Electronics and electrical industries
Published
2010

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