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La presencia de contaminantes atmosféricos y de gases de efecto invernadero supone un problema actual de gran relevancia, tanto en la salud de las personas, como para el medio ambiente. Es por ello que, surge la necesidad de medir la cantidad de estos agentes presentes en el aire. Para ello se emplean diferentes sensores de gases. En este Trabajo de Fin de Master, se desarrollarán sensores de gases de tipo resistivo, utilizando la técnica de drop-casting y fabricados a partir de nanomateriales de semiconductores de óxidos metálicos, como el óxido de estaño, el óxido de cinco el óxido de titanio, utilizando como dopante el terbio. También se estudiarán las propiedades eléctricas y ópticas de los sensores desarrollados, con el fin de poder aplicarlos en la detección agentes contaminantes, como el monóxido de carbono y el dióxido de nitrógeno, y en la detección de gases de efecto invernadero, como el dióxido de carbono o el metano. De esta forma se intentará desarrollar sensores, que permitan medir la presencia en el aire de los distintos gases de estudio de manera efectiva., The presence of atmospheric pollutants and greenhouse gases is a current issue of great rele vance, both for human health and for the environment. This is why there is an increasing need to measure the amount of these agents present in the air. Different gas sensors are used for this purpose. In this Master’s Thesis, resistive gas sensors will be developed using the drop-casting technique and made from semiconductor nanomaterials such as tin oxide, zinc oxide, or titanium oxide, with terbium as a dopant. The electrical and optical properties of the developed sensors will also be studied to apply them in detecting pollutants such as carbon monoxide and nitrogen dioxide, as well as greenhouse gases like carbon dioxide and methane. The aim is to develop sensors that effectively measure the presence of these various gases in the air.

(c) 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works, Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A physical mechanism based on the evolution of the threshold voltage of irradiated NMOS transistors is proposed in this paper. Finally, consequences of inactivity windows in the conception of radiation tests are discussed., Ministerio de Educación y Ciencia, CERN, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

© 2018 IEEE This work was supported in part by the Spanish MINECO projects FPA2015-69210-C6-5-R and TIN2017-87237-P, and by the UCM mobility program for young professors., After having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determine if two bitflips are related. However, if there are enough bitflips, it is possible that unrelated pairs of errors appear in nearby cells and they are erroneously taken as a multiple event. In this paper, radiation experiments are studied as a special case of the urn-and-balls problem in probability theory to estimate how the measured multiple-event cross sections must be corrected to remove the overestimation due to the false events., Ministerio de Economía y Competitividad (MINECO), Universidad Complutense de Madrid, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Sistemas Informáticos y Computación, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

© IEEE TNS. This work was supported in part by the cooperation agreement K476/LHC between CERN and UCM, the Spanish research agency CICYT (FPA2002-00912), and ITN., Discrete bipolar operational amplifiers were irradiated with neutrons in order to study the evolution of the short circuit currents. Also, this paper explores the effect of the reduction of this current in devices based on operational amplifiers., Ministerio de Educación y Ciencia, CERN, ITN (Portugal), Universidad Complutense de Madrid, CICYT, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

© IEEE-Inst Electrical Electronics Engineers. This work was supported in part by the Spanish MCINN project TIN2013-40968-P, by the Secretaría de Educación Superior Ciencia Tecnología e Innovación del Ecuador (SENESCYT), and by the “José Castillejo” mobility grant for professors and researchers., This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported., Ministerio de Economía y Competitividad (MINECO), Secretaría de Educación Superior Ciencia Tecnología e Innovación del Ecuador (SENESCYT), Programa "José Castillejo" para movilidad de profesores, Ministerio de Educación, Cultura y Deporte (MECD), España, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

© 2016 Elsevier B.V. All rights reserved. This work was supported by MCINN project FPA2015-69120-C6–5R, A variable width pulse generator featuring more than 4-V peak amplitude and less than 10-ns FWHM is described. In this design the width of the pulses is controlled by means of the control signal slope. Thus, a variable transition time control circuit (TTCC) is also developed, based on the charge and discharge of a capacitor by means of two tunable current sources. Additionally, it is possible to activate/deactivate the pulses when required, therefore allowing the creation of any desired pulse pattern. Furthermore, the implementation presented here can be electronically controlled. In conclusion, due to its versatility, compactness and low cost it can be used in a wide variety of applications., Ministerio de Ciencia e Innovación (MICINN), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

© 2015 IEEE. This work was supported in part by the MCINN projects AYA2009-13300-C03-03 and Consolider SAUUL CSD2007-00013, by MCINN Grant CTQ2008-02578/BQU, and by UCM-BSCH, This paper proposes a technique to build SPICE micromodels of integrated circuits in bipolar technology appropriate to simulate single event transients. First of all, we will show how to obtain SPICE models of the internal transistors from texts in the scientific and academic literature. Next, several strategies to figure out the internal structure of the integrated circuits and bias point will be shown. Finally, simulation results will be compared to data issue from experiments, either performed by the authors or by other researchers. As the simulations do not require expensive software or hardware, this paper can be a start point for research groups with small budget or for academic purposes at universities., MICINN (Spain), Universidad Complutense de Madrid-BSCH, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Química Física, Fac. de Ciencias Físicas, Fac. de Ciencias Químicas, TRUE, pub

(c) 2010 IEEE. Personal use of this material is ermitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works., The influence of a load resistor on the shape of the single event transients was investigated in the LM124 operational amplifier by means of laser tests. These experiments indicated that, as a general rule, load resistors modify the size of the transients. SPICE simulations helped to understand the reasons of this behavior and showed that the distortion is related to the necessity of providing or absorbing current from the load resistor, which forces the amplifier to modify its operation point. Finally, load effects were successfully used to explain the distortion of single event transients in typical feed-back networks and the results were used to explain experimental data reported elsewhere., Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Química Física, Fac. de Ciencias Físicas, Fac. de Ciencias Químicas, TRUE, pub

This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments)., Ministerio de Ciencia e Innovación (MICINN), Universidad Complutense de Madrid - Banco Santander, Becas "José Castillejo", Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

(c) 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works, The peak detector effect is a phenomenon that makes single event transients much longer once an error amplifier switches from linear to saturation zone due to the presence of external capacitors. This is so-called since it was discovered in a simple voltage reference in which a parasitic lossy peak detector was unwillingly built in the output stage. In this paper, peak detector effect is generalized to explain the appearance of long duration pulses in typical low dropout voltage regulator built with discrete devices. This effect has been related to the way in which the negative feedback loop is closed and to the kind of pass device in the output stage. Thus, if the linear voltage regulator consists in an error amplifier the output of which controls a current source, the peak detector effect will occur if the current source is unidirectional, the output load does not drain enough current and is in parallel with an external capacitor., Ministerio de Ciencia e Innovación, Universidad Complutense de Madrid, Banco Santander - Central Hispano, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Química Física, Fac. de Ciencias Físicas, Fac. de Ciencias Químicas, TRUE, pub

© IEEE TNS, Tests on instrumentation amplifiers exposed to neutron radiation have been done. The tested devices were commercial instrumentation amplifiers or designed with rad-tol commercial operational amplifiers. The results show changes in frequency behavior, gain, offset voltage, output saturation voltages, and quiescent current. The radiation tolerance is bigger in amplifiers with JFET input stage or with large frequency bandwidth and is smaller if the amplifier has been designed for reducing the power consumption. The IAs built with OPAMPs have a higher tolerance than the commercial ones, but they have disadvantages: high temperature influence, low CMRR, etc., Ministerio de Educación y Ciencia, CERN, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

This abstract presents an experimental study of the impact of using a high flux in radiation ground tests on the measured cross-section of SRAMs. Experimental results obtained with 15 MeV protons will show that using a high particle flux makes the measured cross-section increase by almost 1 order of magnitude., Ministerio de Economía y Competitividad, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results. In this paper, simple formulae are proposed to determine the expected number of false 2-bit and 3-bit MCUs from the number of bitflips, memory size and the method used to search multiple events. These expressions are validated using Monte Carlo simulations and experimental data. Also, a technique is proposed to refine experimental data and thus partially removing possible false events. Finally, it is demonstrated that there is a physical limit to determine the cross section of memories with arbitrary accuracy from a single experiment., Ministerio de Economía y Competitividad (MINECO), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, inpress

A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and classified as cells of the configuration RAM, BRAM, or flip-flops. SBUs and MCUs with multiplicities ranging from 2 to 8 were identified using a statistical method. Possible shapes of multiple events are also investigated, showing a trend to follow wordlines. Finally, MUSCA SEP3 was used to make assesment for actual environments and an improvement of SEU injection test is proposed., Ministerio de Economía y Competitividad (MINECO), IRT Nanoelec, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, inpress

Commercial-off-the-shelf (COTS) capacitor-based isolation amplifiers were irradiated at the Portuguese Research Reactor (PRR) in order to determine its tolerance to the displacement damage and total ionising dose (TID). The set of experimental data shows that some of these devices are suitable for zones inside future nuclear facilities where the expected total radiation damage would be below 2.2 × 10 13 1 ‐ MeV neutron / cm 2 and 230 Gy (Si). However, some drawbacks must be taken into account by the electronic designers such as the increase of the output offset voltage and the slight modification of the transmission gain., Ministerio de Educación y Ciencia, CERN, UCM, CICYT, AECI, Miguel Casado San José Foundation, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

(c) 2007 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works, Power operational amplifiers were irradiated in a mixed neutron and gamma radiation environment. These experiments showed that the degradation of the power operational amplifiers shares a great deal of characteristics with that of the low signal devices (e.g., shift of the input offset voltage, increase of the input bias currents, and degradation of the frequency behavior). However, other phenomena were observed without equivalence in the family (linear dependence of the inverse of the quiescent current on the neutron fluence, more significant degradation of the negative output current and collapse of the primary operational amplifiers). These phenomena were explained from the special characteristics of the output stage, optimized to provide a current of several amperes. Finally, even though power devices are especially sensitive to radiation damage, some of the tested devices are suitable for radiation levels on the order of 5 ldr 1013 - 1014 n ldr cm-2 in case the whole electronic system, in which the device is integrated, is carefully designed., Ministerio de Educación y Ciencia, CERN, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

This work was supported in part by the Spanish MINECO projects under Grant TIN2017-87237-P and Grant PID2020-112916GB-I00, and in part by the European Union's Horizon 2020 Research and Innovation Program under Grant 101008126., In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices. This paper investigates the behavior of state-of-the-art memories manufactured in emerging technologies, including Ferroelectric Random-Access Memory (FRAM), Resistive Random-Access Memory (ReRAM), and Magnetic Random-Access Memory (MRAM), against radiation effects in static and dynamic modes. Radiation-ground tests were conducted under 15-MeV and 1-MeV protons, thermal and 14.8-MeV neutrons leading to various categories of radiation effects. Experimental results will show clear evidence of the robustness of bitcells manufactured using these emerging technologies against radiation, but at the same time, some susceptibility in these devices to suffer radiation effects when working in dynamic mode. Experimental results with the CY15B102Q and CY15B104Q FRAMs (Infineon Technologies), the MB85AS4MT, and MB85AS8MT ReRAMs (Fujitsu), and the MR10Q010CSC and MR25H40CDF MRAMs (Everspin) will be presented and discussed., Ministerio de Economía y Competitividad (MINECO), Unión Europea, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

In aerospace industry, Commercial-Off-The-Shelf (COTS) Static Random Access Memories (SRAMs) are a cost-effective solution for obtaining high performance at the system level, which is difficult to obtain using space qualified components. Additionally, the usage of Dynamic Voltage Scaling (DVS) is commonly used in space environments, where low power consumption is a critical issue. This paper presents an analysis of the sensitivity against Single Event Upsets (SEUs) of various COTS bulk SRAMs and Advanced Low-Power SRAMs against proton radiation when using DVS to save power. Experimental results will show a clear evidence that the sensitivity to SEUs increases when the power is lowered. 2 sets of successive technologies (130-nm, 90-nm and 65-nm bulk SRAMs; and 150-nm and 110-nm A-LPSRAMs) are evaluated against 15~MeV protons and compared with results of 14~MeV neutrons presented in a previous work. Experimental data are finally compared with analytical simulations obtained by using the MUSCA-SEP3 Monte-Carlo tool to predict the effect of DVS on the SEE sensitivity on more modern technologies in the ITRS/IRDS roadmap., Ministerio de Economía, Comercio y Empresa (España), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

This abstract presents an experimental study of the impact of using a high flux in radiation ground tests on the measured cross-section of SRAMs. Experimental results obtained with 15 MeV protons will show that using a high particle flux makes the measured cross-section increase by almost 1 order of magnitude., Ministerio de Economía y Competitividad, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

El objetivo de este proyecto es elaborar una herramienta web que permita a los profesores actualizar las fichas docentes de su asignatura de forma online mediante un formulario web, almacenando la información de las guías en una base de datos, de modo que el sistema señale los cambios realizados, gestione el acceso y permisos de los usuarios, y permita exportar y generar las fichas de las asignaturas en diversos formatos respetando los apartados y condiciones de la Memoria de Verificación (VERIFICA).

El proyecto ha consistido en la creación de un espacio virtual en Moodle para publicar contenidos complementarios para las asignaturas relacionadas con el área de la Electrónica.

This paper presents an analysis of the multiple events (and more specifically, Multiple Cell Upsets or MCUs) that may occur at successive generations of bulk CMOS SRAMs operating under harsh conditions, such as in avionics or space. Such MCU distribution is greatly impacted by the bitcell topology, which, in the International Technology Roadmap for Semiconductors (ITRS) / International Roadmap for Devices and Systems (IRDS) history, experienced a drastic change in the transition between the 90-nm and the 65-nm nodes. Experimental results obtained from proton and neutron accelerators, along with predictions issued from the MUSCA-SEP3 modeling tool, are provided. Various COTS Static Random Access Memories (SRAMs) manufactured by Infineon in bulk CMOS 130-nm nodes down to the 65-nm one were used as targets for the experimental results. Finally, MUSCA-SEP3 was also used to analyze and discuss scaling trends on more modern nodes (45-nm down to 14-nm)., Ministerio de Economía y Competitividad (MINECO), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, inpress

El objetivo de este proyecto es elaborar una herramienta web que permita a los profesores actualizar las fichas docentes de su asignatura de forma online mediante un formulario web, almacenando la información de las guías en una base de datos, de modo que el sistema señale los cambios realizados, gestione el acceso y permisos de los usuarios, y permita exportar y generar las fichas de las asignaturas en diversos formatos respetando los apartados y condiciones de la Memoria de Verificación (VERIFICA).

El proyecto ha consistido en la creación de un espacio virtual en Moodle para publicar contenidos complementarios para las asignaturas relacionadas con el área de la Electrónica.

This work was supported in part by the Spanish Ministry of Economy and Competitiveness (MINECO) under Project TIN2017-87237-P and in part by Spanish MINECO at CNA under Project ESP2015-68245-C4-4-P., This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) bulk 65-nm static random access memory (SRAM) under 15.6 MeV proton irradiation when powered up at ultralow bias voltage. Tests were run on standby and while reading the memory. Results show obvious evidence indicating that decreasing the bias voltage below 1 V exponentially increases the number of observed errors. Single-bit upsets (SBUs) and multiple-cell upsets (MCUs) (mostly with vertical shapes according to the manufacturers' layout) are reported and their behavior is analyzed in this article. Predictions on the single-event upset (SEU) sensitivity obtained with the multiscales single-event phenomena predictive platform (MUSCA-SEP3) modeling tool are also provided and compared with the experimental results. These are also compared with 14.2 MeV neutrons, showing a significant difference in the cross sections for both irradiation sources. Total ionizing dose (TID) tests and GEANT4 simulations were also run to check for the reason behind the difference in the cross section between these two particles., Ministerio de Economía y Competitividad (MINECO), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

This paper addresses the problem of hardware tasks reliability estimation in harsh environments. A novel statistical model is presented to estimate the reliability, the mean time to failure, and the number of errors of hardware tasks running on SRAM-based partially run-time reconfigurable FPGAs in harsh environments by taking both single-bit upsets and multiple-cell upsets into account. The model requires some features of the hardware tasks, including their computation time, size, the percent of critical bits, and the soft error rates of k-bit events (k ≥ 1) of the environment for the reliability estimation. Such an early estimation helps the developers to assess the reliability of their designs at earlier stages and leads to reduce the development cost. The proposed model has been evaluated by conducting several experiments on actual hardware tasks over different environmental soft error rates. The obtained results, endorsed by the 95% confidence interval, reveal the high accuracy of the proposed model. When comparing this approach with a reliability model (developed by the authors in a previous work) that does not consider the occurrence of multiple-cell upsets, an overestimation of the mean time to failure of 2.88X is observable in the latter. This points to the importance of taking into account multiple events, especially in modern technologies where the miniaturization is high., Ministerio de Economía y Competitividad (MINECO), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, inpress

In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results. In this paper, simple formulae are proposed to determine the expected number of false 2-bit and 3-bit MCUs from the number of bitflips, memory size and the method used to search multiple events. These expressions are validated using Monte Carlo simulations and experimental data. Also, a technique is proposed to refine experimental data and thus partially removing possible false events. Finally, it is demonstrated that there is a physical limit to determine the cross section of memories with arbitrary accuracy from a single experiment., Ministerio de Economía y Competitividad (MINECO), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, inpress

A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and classified as cells of the configuration RAM, BRAM, or flip-flops. SBUs and MCUs with multiplicities ranging from 2 to 8 were identified using a statistical method. Possible shapes of multiple events are also investigated, showing a trend to follow wordlines. Finally, MUSCA SEP3 was used to make assesment for actual environments and an improvement of SEU injection test is proposed., Ministerio de Economía y Competitividad (MINECO), IRT Nanoelec, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, inpress

This work was supported in part by the Spanish Ministry of Economy and Competitiveness (MINECO) under project TIN2017-87237, and by the Universidad Complutense de Madrid (UCM) Mobility Program for Young Professors. The authors are very grateful to our colleagues S. Rey, T. Gemond, and M. Baylac, from the Laboratoire de Physique Subatomique et Cosmologie (LPSC), Université Grenoble-Alpes & CNRS/IN2P3. The work on GENEPI2 at LPSC (CNRS/UGA) has been performed within the “Characterisation Program” of the IRT nanoelec., In harsh radiation environments, it is well known that the angle of incidence of impinging particles against the surface of the operating devices has significant effects on their sensitivity. This article discusses the sensitivity underestimations that are made if particle isotropy is not taken into account, by means of an analytical study made with a single-event upset predictive platform. To achieve this goal, experimental results carried out with a commercial-off-the-shelf (COTS) bulk 130-nm nonvolatile static random access memory (SRAM) for various incident angles on 14.2 MeV neutrons are first discussed. Then, a modeling tool called multiscales single-event phenomena predictive platform (MUSCA-SEP3) is used to predict the sensitivity of this memory under the same environmental conditions. Predictions and experimental results will be cross-checked, and therefore, the feasibility of this tool will be demonstrated for testing any other incident angle. Finally, an isotropic environment and an XY SRAM array will be emulated with MUSCA in order to demonstrate that the asymmetrical cross sections that were observed experimentally for various incidence angles are due to the underlying asymmetry of the metalization/passivation layers within the device with respect to its active silicon. Conclusions will finally be drawn as for the importance of taking into account particle isotropy in radiation-ground tests., Ministerio de Economía y Competitividad (MINECO), Universidad Complutense de Madrid (UCM) Mobility Program for Young Professors, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

© 2018 IEEE This work was supported in part by the Spanish MINECO projects FPA2015-69210-C6-5-R and TIN2017-87237-P, and by the UCM mobility program for young professors., After having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determine if two bitflips are related. However, if there are enough bitflips, it is possible that unrelated pairs of errors appear in nearby cells and they are erroneously taken as a multiple event. In this paper, radiation experiments are studied as a special case of the urn-and-balls problem in probability theory to estimate how the measured multiple-event cross sections must be corrected to remove the overestimation due to the false events., Ministerio de Economía y Competitividad (MINECO), Universidad Complutense de Madrid, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Sistemas Informáticos y Computación, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

“© © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”, This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for SRAM power supplies ranging from 0.5 V to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform (MUSCA-SEP3). Large-scale SELs and SEFIs, observed in the 90-nm and 130-nm SRAMs respectively, are also presented and discussed., MINECO, Universidad Complutense de Madrid, Depto. de Arquitectura de Computadores y Automática, Fac. de Informática, TRUE, inpress

Ministerio de Ciencia e Innovación (MICINN), Becas José Castillejo, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

© 2016 Elsevier B.V. All rights reserved. This work was supported by MCINN project FPA2015-69120-C6–5R, A variable width pulse generator featuring more than 4-V peak amplitude and less than 10-ns FWHM is described. In this design the width of the pulses is controlled by means of the control signal slope. Thus, a variable transition time control circuit (TTCC) is also developed, based on the charge and discharge of a capacitor by means of two tunable current sources. Additionally, it is possible to activate/deactivate the pulses when required, therefore allowing the creation of any desired pulse pattern. Furthermore, the implementation presented here can be electronically controlled. In conclusion, due to its versatility, compactness and low cost it can be used in a wide variety of applications., Ministerio de Ciencia e Innovación (MICINN), Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments)., Ministerio de Ciencia e Innovación (MICINN), Universidad Complutense de Madrid - Banco Santander, Becas "José Castillejo", Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

© 2017 The American Astronomical Society. Artículo firmado por 381 autores. We gratefully acknowledge financial support from the following agencies and organizations: Ministerio de Ciencia, Tecnología e Innovación Productiva (MinCyT), Comisión Nacional de Energía Atómica (CNEA), Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina; State Committee of Science of Armenia, Armenia; Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq), Fundação de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ), Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), Brasil; Croatian Science Foundation, Croatia; Ministry of Education, Youth and Sports, MEYS LE13012, LG14019, 7AMB14AR005, and the Czech Science Foundation grant 14-17501S, Czech Republic; Ministry of Higher Education and Research, CNRS-INSU and CNRS-IN2P3, CEA-Irfu, ANR, Regional Council Ile de France, Labex ENIGMASS, OSUG2020 and OCEVU, France; Max Planck Society, BMBF, DESY, Helmholtz Association, Germany; Department of Atomic Energy, Department of Science and Technology, India; Istituto Nazionale di Astrofisica (INAF), Istituto Nazionale di Fisica Nucleare (INFN), MIUR, Italy; ICRR, University of Tokyo, JSPS, Japan; Netherlands Research School for Astronomy (NOVA), Netherlands Organization for Scientific Research (NWO), Netherlands; The Bergen Research Foundation, Norway; Ministry of Science and Higher Education, the National Centre for Research and Development and the National Science Centre, Poland; Slovenian Research Agency, Slovenia; MINECO support through the National R + D + I, Subprograma Severo Ochoa, CDTI funding plans and the CPAN and MultiDark Consolider-Ingenio 2010 program, Spain; Swedish Research Council, Royal Swedish Academy of Sciences, Sweden; Swiss National Science Foundation (SNSF), Ernest Boninchi Foundation, Switzerland; Durham University, Leverhulme Trust, Liverpool University, University of Leicester, University of Oxford, Royal Society, Sc, We perform simulations for future Cherenkov Telescope Array (CTA) observations of RX J1713.7−3946, a young supernova remnant (SNR) and one of the brightest sources ever discovered in very high energy (VHE) gamma rays. Special attention is paid to exploring possible spatial (anti)correlations of gamma rays with emission at other wavelengths, in particular X-rays and CO/H I emission. We present a series of simulated images of RX J1713.7−3946 for CTA based on a set of observationally motivated models for the gamma-ray emission. In these models, VHE gamma rays produced by high-energy electrons are assumed to trace the nonthermal X-ray emission observed by XMM-Newton, whereas those originating from relativistic protons delineate the local gas distributions. The local atomic and molecular gas distributions are deduced by the NANTEN team from CO and H I observations. Our primary goal is to show how one can distinguish the emission mechanism(s) of the gamma rays (i.e., hadronic versus leptonic, or a mixture of the two) through information provided by their spatial distribution, spectra, and time variation. This work is the first attempt to quantitatively evaluate the capabilities of CTA to achieve various proposed scientific goals by observing this important cosmic particle accelerator., Unión Europea. FP7, Ministerio de Economía y Competitividad (MINECO), Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Argentina, Ministerio de Ciencia, Tecnología e Innovación Productiva (MinCyT), Argentina, Comisión Nacional de Energía Atómica (CNEA), Argentina, Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq), Brasil, Fundação de Amparo à Pesquisa do Estado do Rio de Janeiro (FAPERJ), Brasil, Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), Brasil, Croatian Science Foundation, Croatia, Ministry of Education, Youth and Sports, MEYS, Czech Republic, Czech Science Foundation, Czech Republic, Ministry of Higher Education and Research, Czech Republic, Regional Council Ile de France, France, Max Planck Society, Germany, BMBF, Germany, DESY, Germany, Helmholtz Association, Germany, Department of Atomic Energy, India, Department of Science and Technology, India, Istituto Nazionale di Astrofisica (INAF), Italy, Istituto Nazionale di Fisica Nucleare (INFN), Italy, MIUR, Italy, ICRR, Japan, University of Tokyo, JSPS, Japan, Netherlands Research School for Astronomy (NOVA), Netherlands Organization for Scientific Research (NWO), The Bergen Research Foundation, Norway, Ministry of Science and Higher Education, Poland, the National Centre for Research and Development, Poland, the National Science Centre, Poland, Slovenian Research Agency, Slovenia, Subprograma Severo Ochoa, Spain, CDTI, Spain, CPAN, Spain, MultiDark Consolider-Ingenio 2010 program, Spain, Swedish Research Council, Royal Swedish Academy of Sciences, Sweden, Swiss National Science Foundation (SNSF), Ernest Boninchi Foundation, Switzerland, Durham University, UK, Leverhulme Trust, UK, Liverpool University, UK, University of Leicester, UK, University of Oxford, UK, Royal Society, Science and Technologies Facilities Council, UK, U.S. National Science Foundation, USA, U.S. Department of Energy, USA, Argonne National Laboratory, USA, Barnard College, USA, University of California, USA, University of Chicago, USA, Columbia University, USA, Georgia Institute of Technology, USA, Institute for Nuclear and Particle Astrophysics (INPAC-MRPI program), USA, Iowa State University, USA, Washington University McDonnell Center for the Space Sciences, USA, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

“© © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”, Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Field Programmable Gate Arrays (FPGAs) and the original authors indicate that it is also valid for SRAMs. This paper presents a modified methodology that is based on checking the XORed addresses with bitflips, rather than on the difference. Irradiation tests on CMOS 130 & 90 nm SRAMs with 14-MeV neutrons have been performed to validate this methodology. Results in high-altitude environments are also presented and cross-checked with theoretical predictions. In addition, this methodology has also been used to detect modifications in the organization of said memories. Theoretical predictions have been validated with actual data provided by the manufacturer., Ministerio de Ciencia e Innovación (MICINN), Mobility grant “José Castillejo” for professors and researchers, UCM-BSCH, Depto. de Arquitectura de Computadores y Automática, Fac. de Informática, TRUE, pub

© IEEE-Inst Electrical Electronics Engineers. This work was supported in part by the Spanish MCINN project TIN2013-40968-P, by the Secretaría de Educación Superior Ciencia Tecnología e Innovación del Ecuador (SENESCYT), and by the “José Castillejo” mobility grant for professors and researchers., This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported., Ministerio de Economía y Competitividad (MINECO), Secretaría de Educación Superior Ciencia Tecnología e Innovación del Ecuador (SENESCYT), Programa "José Castillejo" para movilidad de profesores, Ministerio de Educación, Cultura y Deporte (MECD), España, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Arquitectura de Computadores y Automática, Fac. de Ciencias Físicas, Fac. de Informática, TRUE, pub

This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.

This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.

Apuntes de trabajo y exámenes resueltos de la Asignatura Electrónica Analógica, de la desaparecida Ingeniería Superior Electrónica. Asimismo, descripción de los modelos SPICE de los dispositivos electrónicos básicos.

Incidencias en la creación de una base de dato online de software científico de uso gratuito para alumnos de las titulaciones de la Facultada de Físicas

© 2015 IEEE. This work was supported in part by the MCINN projects AYA2009-13300-C03-03 and Consolider SAUUL CSD2007-00013, by MCINN Grant CTQ2008-02578/BQU, and by UCM-BSCH, This paper proposes a technique to build SPICE micromodels of integrated circuits in bipolar technology appropriate to simulate single event transients. First of all, we will show how to obtain SPICE models of the internal transistors from texts in the scientific and academic literature. Next, several strategies to figure out the internal structure of the integrated circuits and bias point will be shown. Finally, simulation results will be compared to data issue from experiments, either performed by the authors or by other researchers. As the simulations do not require expensive software or hardware, this paper can be a start point for research groups with small budget or for academic purposes at universities., MICINN (Spain), Universidad Complutense de Madrid-BSCH, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Química Física, Fac. de Ciencias Físicas, Fac. de Ciencias Químicas, TRUE, pub

© 2015 Elsevier., A reliable voltage reference is mandatory in mixed-signal systems. However, this family of components can undergo very long single event transients when operating in radiation environments such as space and nuclear facilities due to the impact of heavy ions. The purpose of the present paper is to demonstrate how a simple cell can be used to detect these transients. The cell was implemented with typical {COTS} components and its behavior was verified by {SPICE} simulations and in a laser facility. Different applications of the cell are explored as well., Ministerio de Educación y Ciencia, Universidad Complutense de Madrid, Banco Santander, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Depto. de Química Física, Fac. de Ciencias Físicas, Fac. de Ciencias Químicas, TRUE, pub