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Hydrothermal carbonization (HTC) is an efficient thermochemical method for the conversion of organic feedstock to carbonaceous solids. HTC of different saccharides is known to produce microspheres (MS) with mostly Gaussian size distribution, which are utilized as functional materials in various applications, both as pristine MS and as a precursor for hard carbon MS. Although the average size of the MS can be influenced by adjusting the process parameters, there is no reliable mechanism to affect their size distribution. Our results demonstrate that HTC of trehalose, in contrast to other saccharides, results in a distinctly bimodal sphere diameter distribution consisting of small spheres with diameters of (2.1 ± 0.2) mum and of large spheres with diameters of (10.4 ± 2.6) mum. Remarkably, after pyrolytic post-carbonization at 1000 °C the MS develop a multimodal pore size distribution with abundant macropores > 100 nm, mesopores > 10 nm and micropores < 2 nm, which were examined by small-angle X-ray scattering and visualized by charge-compensated helium ion microscopy. The bimodal size distribution and hierarchical porosity provide an extraordinary set of properties and potential variables for the tailored synthesis of hierarchical porous carbons, making trehalose-derived hard carbon MS a highly promising material for applications in catalysis, filtration, and energy storage devices. This journal is © The Royal Society of Chemistry.

Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant Ru/Co bilayer nanostructure in a contact-free fashion using THz time-domain spectroscopy. By applying an effective resistor network to the data, we resolve the complex current pathways within the nanostructure and determine the degree of electronic transparency of the internal interface between the Ru and Co nanolayers. Published under an exclusive license by AIP Publishing.

The industrial production of prototypes made of polyurethane via silicone molds in the vacuum casting process is one of the most widespread applications of rapid tooling. The silicone molds show progressive deterioration, as the isocyanate component of the polyurethane resin diffuses into the mold cavity surface during the casting process, thus limiting their durability. Here, we present the first comprehensive description of the underlying chemical and physical mechanisms on a molecular level. It is shown that the isocyanate polymerizes inside the polydimethylsiloxane matrix with moisture to polyurea. Polyurea clusters, which emerge from the resulting interpenetrating polymer network with continuing isocyanate exposure, promote fissure formation under mechanical demolding stresses. The mechanism was investigated with a wide variety of characterization methods, and qualitative variations were demonstrated using different commercial materials. Influencing factors such as mold geometry, process flow, and different aspects of the material composition were examined experimentally. A thorough understanding of the deterioration mechanism paves the way for the development of durable molds and an economical midseries technology in plastics processing.

The electrochemical properties of carbonaceous materials produced by hydrothermal carbonization, referred to as hydrochar, can be substantially improved by post-carbonization via pyrolysis. Although these materials have been widely studied for a variety of applications, the mechanisms underlying the pyrolysis are yet poorly understood. This study provides a comprehensive temperature-resolved characterization of the chemical composition, morphology and crystallinity of sucrose-derived hydrochar during pyrolysis. Thermogravimetric analysis, differential scanning calorimetry, and elemental analysis have shown that the dry hydrochar loses about 41% of its dry mass due to the exothermic disintegration of oxygen-containing groups until the carbonization is completed at about 850 degrees C with a total carbon yield of 93%. The carbonization and aromatization of the initially furanic and keto-aliphatic structure were analyzed by 13C solid-state nuclear magnetic resonance spectroscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. The transition from an amorphous to a nanocrystalline graphitic structure was analyzed using X-ray diffraction and Raman spectroscopy. The pore formation mechanism was examined by helium ion microscopy, transmission electron microscopy, and nitrogen adsorption measurements. The results indicate the formation of oxygen-rich nanoclusters up to 700 degrees C, which decompose up to 750 degrees C leaving behind equally sized pores, resulting in a surface area of up to 480 m2/g.

The benefits conferred by the thermal stability, very low detection limit, and high sensitivity of planar Hall effect (PHE) sensors have supported up-to-date diversity of applications like nT magnetometer, current sensing, or low magnetic moments detection in lab-on-a-chip devices. Herein, we demonstrate in this review the implications linked to planar Hall effect sensors, initiating from the backbone of PHE and its evolution throughout the recent few decades. Key parameters affecting sensors' performance such as noise different sources, thermal stability, and magnetoresistance magnitude are discussed. The progression of sensor junction from disk, cross to bridge, ring, and ellipse configuration is delivered. Moreover, the logical sequence of structure from a single magnetoresistive layer to bi-, trilayers, and spin-valves is briefly investigated. Research contributions to the development of these sensors are highlighted with the focus on microfluidics and flexible sensorics areas. The conclusions extracted from this review are beneficial for the production, development, and performance quality validation of planar Hall effect-based devices and microfluidics and future expectations. Not at least, this review can be a valuable source of information for scientists that intend to use PHE for fundamental research or to develop new applications and devices.

Herein, sputter-deposited ferromagnetic Weyl semimetal (WSM) and full-Heusler compound Co2TiGe is investigated. Crystal quality is analyzed using X-ray diffraction and reflectivity. In addition, temperature-dependent transport and magnetization measurements are carried out. The sample shows indications on the formation of L2(1)crystal structure. Magnetization measurements show a saturation magnetization of 1.98 mu(B)(f.u.)(-1)and 1.45 mu(B)(f.u.)(-1)at 50 and 300 K, respectively. This is in close agreement to the calculated value of 2 mu(B)(f.u.)(-1)at 0 K using the Slater-Pauling rule. The obtained Curie temperature is 378.5 K, which is close to prior results for bulk samples. The residual resistivity of 142.7 mu omega cm is mainly dominated by disorder scattering. At temperatures above 60 K, the Coulomb interaction dominates the resistance. The residual resistance ratio is around 1.49. Hall measurements show positive ordinary Hall and anomalous Hall constants and a positive dependence on temperature. Skew scattering and side jumps or intrinsic mechanisms contribute in similar amounts to the anomalous Hall resistivity, which indicates a higher than usual intrinsic contribution, which is expected for WSMs. The expected relation between the longitudinal and the anomalous Hall conductivity of sigma xyA proportional to sigma xx0is not met.

Spin currents can exert spin-transfer torques on magnetic systems even in the limit of vanishingly small net magnetization, as recently shown for antiferromagnets. Here, we experimentally show that a spin-transfer torque is operative in a macroscopic ensemble of weakly interacting, randomly magnetized Co nanomagnets. We employ element- and time-resolved X-ray ferromagnetic resonance (XFMR) spectroscopy to directly detect subnanosecond dynamics of the Co nanomagnets, excited into precession with cone angle ≳0.003° by an oscillating spin current. XFMR measurements reveal that as the net moment of the ensemble decreases, the strength of the spin-transfer torque increases relative to those of magnetic field torques. Our findings point to spin-transfer torque as an effective way to manipulate the state of nanomagnet ensembles at subnanosecond time scales.

Efficient spin injection from epitaxial ferrimagnetic ${\mathrm{Ni}\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$ thin films into a $\mathrm{Pd}$ layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The ${\mathrm{Ni}\mathrm{Fe}}_{2}{\mathrm{O}}_{4}$ films (60 nm to 1 $\ensuremath{\mu}$) are grown by pulsed-laser deposition on isostructural spinel ${\mathrm{Mg}\mathrm{Al}}_{2}{\mathrm{O}}_{4}$, ${\mathrm{Mg}\mathrm{Ga}}_{2}{\mathrm{O}}_{4}$, and ${\mathrm{Co}\mathrm{Ga}}_{2}{\mathrm{O}}_{4}$ substrates with lattice mismatch varying between 3.2 and 0.2%. For the thinner films ($\ensuremath{\le}330$ nm), an increase in the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert damping parameter as determined from ferromagnetic resonance measurements. High-resolution transmission electron microscopy studies indicate substantial decrease of antiphase boundary and interface defects that cause strain relaxation, i.e., misfit dislocations, in the films with decreasing lattice mismatch. This highlights the importance of reducing structural defects in spinel ferrites for efficient spin injection. It is further shown that angle-dependent spin Seebeck effect measurements provide a qualitative method to probe for in-plane magnetic anisotropies present in the films.

Magnetoresistive sensors using a tunnel magnetoresistance (TMR) spin valve structure with CoFe and CoFeB free layer (FL) are investigated. Lateral dimension, thickness, and magnetic properties of the circular-shaped FL energetically favor the nucleation of a magnetic vortex. In the vortex configuration, the sensors show the expected hysteresis-free transfer curve. Distinct differences between CoFe and CoFeB in the vortex typical parameters are observed. The experimental results are compared to micromagnetic simulations. Influence of saturation magnetization ${M}_{s}$ on the vortex transfer curve is studied in order to reproduce the experimental data. However, only by adjusting ${M}_{s}$ iteratively the experimental data cannot be fully reproduced: The vortex annihilation ( ${H}_{\mathrm {an}}$ ) in CoFeB occurs at smaller fields than simulated. On the other hand, the change in TMR signal at ${H}_{\mathrm {an}}$ is significantly smaller in the experiment for CoFe. Discrepancies are most pronounced at ${H}_{\mathrm {an}}$ . This investigation focuses on the magnetic and electric properties at the edge of the FL structure. Reduction in ${H}_{\mathrm {an}}$ can be explained for 1.1 $\mu \text{m}$ FL diameters by introducing a magnetically disturbed edge. Reduced change in TMR signal at ${H}_{\mathrm {an}}$ can be understood by introducing an electrically inactive edge area. The analysis shows that for CoFe and CoFeB different edge inhomogeneity effects are present or edge inhomogeneities have different impacts.

We demonstrate the broadband THz antireflection coating based on bismuth nanofilms. The antireflection effect stems from the complex-valued conductivity of bismuth, providing excellent impedance matching with high-index dielectrics such as silicon, in the range of at least 0–4 THz. The details of THz conductivity of bismuth will also be presented.

Two thin film deposition routes were studied for the growth of high quality single crystalline Ru (0001) epitaxial films on c-Al2O3 substrates using radio frequency-magnetron sputtering. Such films are very important as buffer layers for the deposition of epitaxial non-collinear antiferromagnetic Mn3X films. The first route involved depositing Ru at 700 degrees C, leading to a smooth 30nm thick film. Although, high resolution x-ray diffraction revealed twinned Ru film orientations, in situ post-annealing eliminated one orientation, leaving the film orientation aligned with the substrate, with no in-plane lattice rotation and a large lattice mismatch (13.6%). The second route involved the deposition of Ru at room temperature followed by in situ post-annealing at 700 degrees C. Transmission electron microscopy confirmed a very high quality of these films, free of crystal twinning, and a 30 degrees in-plane lattice rotation relative to the substrate, resulting in a small in-plane lattice mismatch of -1.6%. X-ray reflectivity demonstrated smooth surfaces for films down to 7nm thickness. 30nm thick high quality single-crystalline Mn3Ga and Mn3Sn films were grown on top of the Ru buffer deposited using the second route as a first step to realize Mn3X films for antiferromagnetic spintronics applications. Published under license by AIP Publishing.

An electric current can be used to switch the magnetization of an antiferromagnetic material that could be integrated with silicon technology.

We investigated the structural and magnetic properties of sputter-deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using X-ray diffraction. X-ray reflection and atomic force microscopy measurements were utilized to investigate the surface properties, roughness, thickness, and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, as well as the used substrates [SrTiO3 (001) and MgO (001)] or buffer layer (TiN), Mn-Fe-Ga crystallized in the cubic or the tetragonally distorted phase. Anomalous Hall effect and alternating gradient magnetometry measurements confirmed strong perpendicular magnetocrystalline anisotropy. Hard magnetic behavior was reached by tuning the composition. TiN-buffered Mn2.7Fe0.3Ga revealed sharper switching of the magnetization compared with the unbuffered layers.

Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic N\'eel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for high-quality films grown with molecular beam epitaxy. Here, we demonstrate that the magnetic order of magnetron-sputtered CuMnAs films can also be manipulated by electrical current pulses. The switching efficiency and relaxation as a function of temperature, current density, and pulse width can be described by a thermal-activation model. Our findings demonstrate that CuMnAs can be fabricated with an industry-compatible deposition technique, which will accelerate the development cycle of devices based on this remarkable material., Comment: 6 + 4 pages, 4 + 4 figures (main + appendix)

The manifestation of spin-orbit interactions, long known to dramatically affect the band structure of heavy-element compounds, governs the physics in the surging class of topological matter. A particular example is found in the new family of topological crystalline insulators. In this systems transport occurs at the surfaces and spin-momentum locking yields crystal-symmetry protected spin-polarized transport. We investigated the current-phase relation of SnTe thin films connected to superconducting electrodes to form SQUID devices. Our results demonstrate that an assisting in-plane magnetic field component can induce 0-π-transitions. We attribute these findings to giant g-factors and large spin-orbit coupling of SnTe topological crystalline insulator, which provides a new platform for investigation of the interplay between spin-orbit physics and topological transport.

The rising field of spin caloritronics focuses on the interactions between spin and heat currents in a magnetic material. The observation of the spin Seebeck effect opened the route to this branch of research making possible the design of thermoelectric devices made of insulating magnetic materials. A round robin test performed by five partners on a single device highlighted the reproducibility problems related to the measurements of the spin Seebeck coefficient, the quantity that describes the strength of the spin Seebeck effect. This work stimulated the search for more reproducible measurement methods.

We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(\textit{x})$/CoFeB/MgO$(\textit{y})$/CoFeB$(\textit{z})$/Ta/Pd. We obtain a large perpendicular exchange bias of 79.6$\,$kA/m for $x=0.3\,$nm. For stacks with $z=1.05\,$nm, the magnetic properties of the soft electrode resemble the characteristics of superparamagnetism. For stacks with $x=0.4\,$nm, $y=2\,$nm, and $z=1.20\,$nm, the exchange bias presents a significant decrease at post annealing temperature $T_\textrm{ann}=330\,^{\circ}$C for 60 min, while the interlayer exchange coupling and the saturation magnetization per unit area sharply decay at $T_\textrm{ann}=340\,^{\circ}$C for 60 min. Simultaneously, the tunnel magnetoresistance ratio shows a peak of $65.5\%$ after being annealed at $T_\textrm{ann}=300\,^{\circ}$C for 60 min, with a significant reduction down to $10\%$ for higher annealing temperatures ($T_\textrm{ann}\geq330\,^{\circ}$C) and down to $14\%$ for longer annealing times ($T_\textrm{ann}=300\,^{\circ}$C for 90 min). We attribute the large decrease of tunnel magnetoresistance ratio to the loss of exchange bias in the pinned electrode.

In general, it is difficult to access the thermal conductivity of thin insulating films experimentally just by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl$_2$O$_4$ (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO ($0.7$ W/(K$\cdot$m)) and MgO ($5.8$ W/(K$\cdot$m)), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.

The ferrimagnetic ${\mathrm{Mn}}_{3}\mathrm{Ge}$ compound has appealing properties for spintronic applications, e.g., a low saturation magnetization, and often a large coercive field is found. Here, we report on a combined experimental and theoretical approach to both reduce the magnetization and increase the coercivity of ${\mathrm{Mn}}_{3}\mathrm{Ge}$ by doping. By calculating defect formation energies, we predict several dopants that are expected to specifically occupy only one lattice site of the crystal structure. For Ni as a dopant, we predict a reduction in the magnetization, which we verify by preparing thin film samples by magnetron co-sputtering. We confirm the predicted reduction in magnetization as well as a greatly enhanced coercivity of more than 5 T. To improve the understanding of the sublattice magnetization in the doped ferrimagnetic material, we performed magnetic spectroscopy experiments on selected samples and compared the results with calculated data. An important finding from a detailed analysis of the spectroscopic data is that a frequently observed soft contribution in the magnetization loop arises from impurities in the film.

We investigate thickness series of films of the Heusler alloy Co$_2$FeAl in order to study the effect of annealing on the interface with a MgO layer and on the bulk magnetic properties. Our results reveal that while the perpendicular interface anisotropy constant $K^{\perp}_{\rm S}$ is zero for the as-deposited samples, its value increases with annealing up to a value of $1.14\, \pm \,0.07$~mJ/m$^2$ for the series annealed at 320$^{\rm o}$C and of $2.07\, \pm \,0.7$~mJ/m$^2$ for the 450$^{\rm o}$C annealed series owing to a strong modification of the interface during the thermal treatment. This large value ensures a stabilization of a perpendicular magnetization orientation for a thickness below 1.7~nm. The data additionally shows that the in-plane biaxial anisotropy constant has a different evolution with thickness in as-deposited and annealed systems. The Gilbert damping parameter $\alpha$ shows minima for all series for a thickness of 40~nm and an absolute minimum value of $2.8\pm0.1\cdot10^{-3}$. The thickness dependence is explained in terms of an inhomogenous magnetization state generated by the interplay between the different anisotropies of the system and by crystalline disorder., Comment: 6 pages, 5 figures

The rising field of spin caloritronics focuses on the interactions between spin and heat currents in a magnetic material; the observation of the spin Seebeck effect opened the route to this branch of research. This paper reports the results of a round robin test performed by five partners on a single device highlighting the reproducibility problems related to the measurements of the spin Seebeck coefficient, the quantity that describes the strength of the spin Seebeck effect. This work stimulated the search for more reproducible measurement methods through the analysis of the systematic effects., Comment: PDFLaTeX, 8 pages, 8 figures

Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the bather of a magnetic tunnel junction may induce pure spin-currents and generate 'thermal' spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nanosized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6 x 9 mu m(2) ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.

We investigated the structural, magnetic, and electrical properties of the perpendicularly magnetized Mn4-xFexGe thin films (0.3

We investigate the influence of the barrier thickness of ${\mathrm{Co}}_{40}{\mathrm{Fe}}_{40}{\mathrm{B}}_{20}$-based magnetic tunnel junctions (MTJs) on the laser-induced tunnel magneto-Seebeck (TMS) effect. Varying the barrier thickness from 1 to 3 nm, we find a distinct maximum in the TMS effect for a 2.6-nm barrier thickness. This maximum is measured independently for two barrier materials, namely, ${\mathrm{MgAl}}_{2}{\mathrm{O}}_{4}$ (MAO) and MgO. Additionally, samples with a MAO barrier exhibit a high thermovoltage of more than $350\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{V}$ in comparison to $90\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}\mathrm{V}$ for the MTJs with a MgO barrier when heated with the maximum laser power of 150 mW. Our results allow for the fabrication of improved stacks when dealing with temperature differences across MTJs for future applications in spin caloritronics, the emerging research field that combines spintronics and thermoelectrics.

We identify and investigate thermal spin transport phenomena in sputter-deposited $\mathrm{Pt}/{\mathrm{NiFe}}_{2}{\mathrm{O}}_{x}$ ($4\ensuremath{\ge}x\ensuremath{\ge}0$) bilayers. We separate the voltage generated by the spin Seebeck effect from the anomalous Nernst effect (ANE) contributions and even disentangle the ANE in the ferromagnet (FM) from the ANE produced by the Pt that is spin polarized due to its proximity to the FM. Further, we probe the dependence of these effects on the electrical conductivity and the band gap energy of the FM film varying from nearly insulating ${\mathrm{NiFe}}_{2}{\mathrm{O}}_{4}$ to metallic ${\mathrm{Ni}}_{33}{\mathrm{Fe}}_{67}$. A proximity-induced ANE could only be identified in the metallic $\mathrm{Pt}/{\mathrm{Ni}}_{33}{\mathrm{Fe}}_{67}$ bilayer in contrast to $\mathrm{Pt}/{\mathrm{NiFe}}_{2}{\mathrm{O}}_{x}$ ($xg0$) samples. This is verified by the investigation of static magnetic proximity effects via x-ray resonant magnetic reflectivity.

Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck voltages of only some {\mu}V, which hampers applications. Here, we demonstrate that half-metallic Heusler compounds are hot candidates for enhancing spin-dependent thermoelectric effects. This becomes evident when considering the asymmetry of the spin-split density of electronic states around the Fermi level that determines the spin-dependent thermoelectric transport in magnetic tunnel junctions. We identify Co$_2$FeAl and Co$_2$FeSi Heusler compounds as ideal due to their energy gaps in the minority density of states, and demonstrate devices with substantially larger Seebeck voltages and tunnel magneto-Seebeck effect ratios than the commonly used Co-Fe-B based junctions., Comment: 9 pages, 4 figures

The determination of the longitudinal spin Seebeck effect (LSSE) coefficient is currently plagued by a large uncertainty due to the poor reproducibility of the experimental conditions used in its measurement. In this work we present a detailed analysis of two different methods used for the determination of the LSSE coefficient. We have performed LSSE experiments in different laboratories, by using different setups and employing both the temperature difference method and the heat flux method. We found that the lack of reproducibility can be mainly attributed to the thermal contact resistance between the sample and the thermal baths which generate the temperature gradient. Due to the variation of the thermal resistance, we found that the scaling of the LSSE voltage to the heat flux through the sample rather than to the temperature difference across the sample greatly reduces the uncertainty. The characteristics of a single YIG/Pt LSSE device obtained with two different setups was $(1.143\pm0.007)\cdot 10^{-7}$ Vm/W and $(1.101\pm0.015)\cdot 10^{-7}$ Vm/W with the heat flux method and $(2.313\pm0.017)\cdot 10^{-7}$ V/K and $(4.956\pm0.005)\cdot 10^{-7}$ V/K with the temperature difference method. This shows that systematic errors can be considerably reduced with the heat flux method., PDFLaTeX, 10 pages, 6 figures

The manipulation of the magnetization by spin-orbit torques (SOTs) has recently been extensively studied due to its potential for efficiently writing information in magnetic memories. Particular attention is paid to non-centrosymmetric systems with space inversion asymmetry, where SOTs emerge even in single-layer materials. The half-metallic half-Heusler PtMnSb is an interesting candidate for studies of this intrinsic SOT. Here, we report on the growth and epitaxial properties of PtMnSb thin films and PtMnSb/Pt bilayers deposited on MgO(001) substrates by dc magnetron co-sputtering at high temperature in ultra-high vacuum. The film properties were investigated by x-ray diffraction, x-ray reflectivity, atomic force microscopy, and electron microscopy. Thin PtMnSb films present a monocrystalline C1b phase with (001) orientation, coexisting at increasing thickness with a polycrystalline phase with (111) texture. Films thinner than about 5 nm grow in islands, whereas thicker films grow layer-by-layer, forming a perfect MgO/PtMnSb interface. The thin PtMnSb/Pt bilayers also show island growth and a defective transition zone, while thicker films grow layer-by-layer and Pt grows epitaxially on the half-Heusler compound without significant interdiffusion., 5 pages, 4 figures

Automotive magnetic field sensing applications require a robust sensing concept. One way to meet the corresponding sensor requirements, such as a negligible hysteresis and a large linear working range, is to employ the vortex state. Consequently, the nucleation field H n of the vortex state becomes a highly important sensor parameter. In this study, we examine different factors that affect H n. Tunneling magnetoresistance spin-valve sensors with disk-shaped CoFeB free layers, which energetically favor the nucleation of the vortex state, are electrically characterized and compared with micromagnetic simulations. Phase transitions into intermediate magnetic states, such as various buckling states, the S-state, or the double vortex state, are extracted from hysteresis loops. The resulting phase diagrams show that the formation of the S-state only occurs below a thickness of approximately 25 nm, whereas the double vortex state nucleates frequently only above approximately 35 nm. Both the S- and double vortex states lower the nucleation field of the single vortex state compared to higher order buckling states. Understanding both the origin and the influence of the intermediate phases opens the way to designing a robust and reliable vortex sensor concept.Automotive magnetic field sensing applications require a robust sensing concept. One way to meet the corresponding sensor requirements, such as a negligible hysteresis and a large linear working range, is to employ the vortex state. Consequently, the nucleation field H n of the vortex state becomes a highly important sensor parameter. In this study, we examine different factors that affect H n. Tunneling magnetoresistance spin-valve sensors with disk-shaped CoFeB free layers, which energetically favor the nucleation of the vortex state, are electrically characterized and compared with micromagnetic simulations. Phase transitions into intermediate magnetic states, such as various buckling states, the S-state, or the double vortex state, are extracted from hysteresis loops. The resulting phase diagrams show that the formation of the S-state only occurs below a thickness of approximately 25 nm, whereas the double vortex state nucleates frequently only above approximately 35 nm. Both the S- and double...

International audience; The ability to stabilize the sensitivity of a magnetoresistance sensor in unstable thermal environments is a key parameter in many high precision measurements. Here, we propose a method to stabilize the sensitivity of a highly sensitive and low noise magnetic sensor based on a planar Hall Effect crossed junction. The stability is achieved by controlling the interplay between Zeeman energy, exchange bias energy, and anisotropy energy as a function of the temperature of the sensor stack comprising a trilayer structure NiFe/Cu/IrMn (10/0.12/10 nm). The high thermal stability of the sensor sensitivity of 4.5 ± 0.15 × 10−3 V/A/T/K is achieved when the external magnetic field is set around ±2 ± 0.04 mT and the applied current is fixed at 20 mA in the temperature range of 110 K–360 K. This method improves the magnetic sensor detection by about an order of magnitude, enabling its deployment in various research fields, particularly to study magnetic properties of small quantities of magnetic materials toward the detection of single magnetic objects, which was impossible before.

We present a study of the dynamic magnetic properties of TiN-buffered epitaxial thin films of the Heusler alloy Fe1.5CoGe. Thickness series annealed at different temperatures are prepared and the magnetic damping is measured, a lowest value of α = 2.18 × 10−3 is obtained. The perpendicular magnetic anisotropy properties in Fe1.5CoGe/MgO are also characterized. The evolution of the interfacial perpendicular anisotropy constant KS⊥ with the annealing temperature is shown and compared with the widely used CoFeB/MgO interface. A large volume contribution to the perpendicular anisotropy of (4.3 ± 0.5) × 105 J/m3 is also found, in contrast with vanishing bulk contribution in common Co- and Fe-based Heusler alloys.

Magnetic tunnel junctions with Fe1+zCo2-xSi (0 ≤ x ≤ 1)electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262% at 15 K and 159% at room temperature were observed for x = 0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap.

Mn 3 − x Ga ( x =0.1, 0.4, 0.7) thin films on MgO and SrTiO 3 substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall effect was observed for the tetragonal distorted lattice in the crystallographic D0 22 phase. The Hall resistivity ϱ xy was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties.

We report magnon spin transport in nickel ferrite (NiFe$_2$O$_4$, NFO)/ platinum (Pt) bilayer systems at room temperature. A nonlocal geometry is employed, where the magnons are excited by the spin Hall effect or by the Joule heating induced spin Seebeck effect at the Pt injector, and detected at a certain distance away by the inverse spin Hall effect at the Pt detector. The dependence of the nonlocal magnon spin signals as a function of the magnetic field is closely related to the NFO magnetization behavior. In contrast, we observe that the magnetoresistance measured locally at the Pt injector does not show a clear relation with the average NFO magnetization. We estimate the magnon spin relaxation length to be 3.1 $\pm$ 0.2 $\mu$m in the investigated NFO samples., Comment: 6 pages, 4 figures

We fabricated NiFe2Ox thin films on MgAl2O4(001) by reactive dc magnetron co-sputtering varying the oxygen partial pressure. The fabrication of a material with a variable oxygen deficiency leads to controllable electrical and optical properties which are beneficial for the investigations of the transport phenomena and could, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity, we obtained the conduction mechanisms that govern the systems in the high and low temperature regimes. We further extracted low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. The Hall coefficient is negative and decreases with increasing conductivity as expected for n-type conduction, while the Hall- and the drift mobilities show a large difference. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energies, with lower band gap values in the less oxidized samples.

Commonly used antiferromagnets contain expensive precious metals, which limits their applicability. Novel materials that are made of abundant elements are thus required for a large scale application, e.g., in spintronic devices. We propose a combinatorial, high-throughput approach based on density functional theory calculations to search for such new antiferromagnets. The power of the method is demonstrated by screening the ternary Heusler compounds for antiferromagnetic phases. We utilize the AFLOWLib, a computational materials database that contains over one million ternary phases. Among these we identify 291 potentially stable magnetic Heusler compounds. By explicitly checking for antiferromagnetic configurations we identify 70 antiferromagnetic Heusler compounds. Comparison with available experimental data shows that the method has excellent selectivity: all known antiferromagnetic Heusler compounds are correctly identified and no material is erroneously assigned an antiferromagnetic ground state. By calculating the N\'eel temperatures we predict 21 antiferromagnetic Heusler compounds with a N\'eel temperature above room temperature.