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46 results on '"Gaetan Prigent"'

1. N-path frequency down-converter modeling and experimental operating principle validation

Author

Olivier D. Bernal, T. Marchal, Gaetan Prigent, Pierre Labrunee, and Jacques Sombrin

Subjects
Digital down converter, Computer science, 020208 electrical & electronic engineering, Clock rate, Bandwidth (signal processing), Topology (electrical circuits), 02 engineering and technology, Integrated circuit, law.invention, Harmonic analysis, Computer Science::Hardware Architecture, law, Harmonics, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electronic circuit
Abstract

This paper describes a new wideband-enabling frequency converter topology based on N-path circuits. A model of the N-path frequency converter, derived from the N-path theory, is proposed. It can predict both conversion gains and the output spectrum, and explain unwanted harmonics as well. The operating principle is validated by an integrated circuit (IC) fabricated in 130nm BiCMOS technology, exhibiting a minimum 185-MHz bandwidth over a 0.5-1.5 GHz clock frequency range.

Published
2020

2. Substrate Integrated Waveguide Bandpass Filters implemented on Silicon Interposer for Terahertz Applications

Author

Mehmet Keynak, Anne-Laure Franc, Gaetan Prigent, Matthias Wietstruck, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Innovations for High Performance Microelectronics (IHP), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)

Subjects
Materials science, Silicon, Terahertz radiation, business.industry, 020208 electrical & electronic engineering, Si-based Integrated Passive Devices, chemistry.chemical_element, Filters, 020206 networking & telecommunications, 02 engineering and technology, Substrate (electronics), law.invention, Reduction (complexity), [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Resonator, chemistry, Band-pass filter, law, 0202 electrical engineering, electronic engineering, information engineering, Insertion loss, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, SIW, business, Waveguide
Abstract

International audience; This paper deals with the design of Substrate Integrated Waveguide (SIW) bandpass filter for D-band (140 GHz) and terahertz (280 GHz and 420 GHz) applications. The filters are implemented in High Resistivity (HR) Silicon interposer technology provided by IHP foundry using Through Silicon Vias (TSV). Filters with 3 dB relative bandwidth of 5% and 10% are designed. A comparison of the filters performance is made for the different frequency range. It evidences the interest of SIW technology in sub-millimeter wave domain towards the resonator quality factor increase and, therefore, insertion loss reduction for filters.

Published
2020

3. Synthesis of a Tunable Impedance Inverter Based on Variable Position of Capacitive-Loads

Author

Pedro Rynkiewicz, Anne-Laure Franc, Gaetan Prigent, Prigent, Gaëtan, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)

Subjects
Materials science, synthesis, business.industry, Capacitive sensing, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, Topology (electrical circuits), 02 engineering and technology, tunable filters, law.invention, Variable (computer science), Capacitor, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Position (vector), Transmission line, law, 0202 electrical engineering, electronic engineering, information engineering, Inverter, Impedance inverter, business, Electrical impedance
Abstract

International audience; This work presents a topology to meet the demand of tunable quarter-wavelength impedance inverters. The proposed solution lies in a transmission line loaded by capacitors whose positions are variable. The associated synthesis is proposed and leads to the possibility of producing a quarter-wave inverter operating at two different frequencies and with two characteristic impedances that can be optimized thanks to the degree of freedom provided by the position of the capacitors.

Published
2019

4. 2 nd - and 4 th -Order planar dual-mode ring filters at 140 GHz in a 130nm BiCMOS technology

Author

Anne-Laure Franc, Matthias Wietstruck, Gaetan Prigent, Mehmet Kaynak, Fabio Coccetti, Pedro Rynkiewicz, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and IHP - Leibniz-Institut für innovative Mikroelektronik

Subjects
Materials science, business.industry, Capacitive sensing, 020208 electrical & electronic engineering, Bandwidth (signal processing), Dual mode, 020206 networking & telecommunications, 02 engineering and technology, Bicmos technology, Resonator, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Planar, Band-pass filter, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; Integrated planar filters at 140 GHz are hereby presented. 2 nd -order dual-mode ring-based filters are studied with and without MIM capacitive loads which allow a footprint reduction by 2.7. Both filters exhibit similar electric response with a 3-dB relative fractional bandwidth (FBW3dB) of 12 % and 4 dB of insertion loss. Two 4 th -order filters are formed by cascading two identic cells (with or without the MIM). They present a narrow FBW3dB of 9.5 % with insertion loss of approximately 10 dB. In this case, the capacitive loading leads to a 1.9 area reduction factor.

Published
2017

5. Millimeter-wave three-state tunable stopband resonator based on integrated MEMS

Author

Fabio Coccetti, Selin Tolunay Wipf, Anne-Laure Franc, Mehmet Kaynak, Gaetan Prigent, Pedro Rynkiewicz, Matthias Wietstruck, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), RF Microtech France, IHP - Leibniz-Institut für innovative Mikroelektronik, Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), and Pistre, Karine

Subjects
Microelectromechanical systems, Materials science, [SPI.OTHER] Engineering Sciences [physics]/Other, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, 02 engineering and technology, Stopband, Microstrip, Stub (electronics), Resonator, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Electric power transmission, Electrical length, Extremely high frequency, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Tunable resonator, MEMS, Integrated, Millimeter wave, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; This paper presents a fully integrated MEMS-based tunable stopband resonator. Two MEMS available in a SiGe BiCMOS technology are implemented to modify the electrical length of a microstrip stub that targets three center frequencies which are 60 GHz, 77 GHz, and 94 GHz. The agreement between the electromagnetic simulations and the measurement results is very good, proving the high reliability of the technology.

Published
2017

6. Compact meandered shorted-stub K-band filter using 0.18-μm CMOS process

Author

Mohd Khairul Mohd Salleh, Noriza Othman, and Gaetan Prigent

Subjects
Materials science, CMOS, business.industry, K band, Bandwidth (signal processing), Insertion loss, Optoelectronics, Center frequency, business, Electronic filter, Microstrip, Stub (electronics)
Abstract

A compact shorted-stub on-chip filter is presented in this paper. All the stubs and line sections of the 3rd order filter were meandered in order to miniaturize the overall size of the filter. Realized using microstrip lines on the top-layer of a 0.18 um CMOS, the overall filter circuit covers a surface area of 1.288 mm by 0.992 mm. The center frequency of the filter is 25 GHz, with an insertion loss of 10 dB at 48 % bandwidth. The layout, simulation results and measurement results are shown in the paper.

Published
2017

7. Tunable dual-mode ring filter based on BiCMOS embedded MEMS in V-band

Author

Anne-Laure Franc, Mehmet Kaynak, Matthias Wietstruck, Gaetan Prigent, Selin Tolunay Wipf, Fabio Coccetti, Pedro Rynkiewicz, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), RF Microtech France, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), and Pistre, Karine

Subjects
Microelectromechanical systems, Tunable filter, MEMS, Integrated filter, BiCMOS, Millimeter wave, V-band, Materials science, [SPI.OTHER] Engineering Sciences [physics]/Other, business.industry, 020208 electrical & electronic engineering, Process (computing), 020206 networking & telecommunications, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Gallium arsenide, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry.chemical_compound, Quality (physics), Band-pass filter, chemistry, Hardware_GENERAL, Filter (video), Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, V band
Abstract

International audience; This paper presents the design of a fully integrated tunable filter implemented in SiGe-BiCMOS technology. The narrow bandpass filter (12%) is aimed at addressing two operating frequencies at 56 GHz and 74 GHz. A synthesis is proposed to control the nominal filter as well as tunability which is obtained by the use of embedded MEMs. A good agreement between electromagnetic simulation and measurement is obtained which proves the quality of both the proposed concept and the technological process.

Published
2017

8. 60 GHz planar filters and transmission lines characterization in 0.25µm BiCMOS techgnology

Author

Pedro Rynkiewicz, Mehmet Kaynak, Gaetan Prigent, Fabio Coccetti, Anne-Laure Franc, Matthias Wietstruck, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), RF Microtech France, IHP - Leibniz-Institut für innovative Mikroelektronik, Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), IHP Frankfurt, and Innovations for High Performance Microelectronics (IHP)

Subjects
010302 applied physics, Engineering, Waveguide filter, business.industry, Coplanar waveguide, 020206 networking & telecommunications, 02 engineering and technology, Distributed element filter, Constant k filter, 01 natural sciences, Microstrip, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Band-pass filter, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Optoelectronics, Prototype filter, business, m-derived filter
Abstract

International audience; In this article, three main aspects of passive millimeter-wave integrated filter realization are exposed. Firstly, the importance of the transmission line choice is discussed by comparing microstrip and coplanar waveguide (CPW) in BiCMOS 0.25μm technology. 50-Ω transmission lines exhibit similar losses around 0.6 dB/mm at 60 GHz. Secondly, two filter topologies, a dual-behavior resonator based filter and a dualmode ring based filter, are compared in terms of insertion losses, surface area and out-of-band rejection. They are both designed using microstrip lines and exhibit a similar 3dB fractional bandwidth (FBW 3dB ) around 12% with a 60 GHz center frequency. Finally, a miniaturization method is presented using Metal-Insulator-Metal (MIM) capacitive loading. A loaded filter is then realized and characterized. Similar electrical performance are demonstrated with a size reduction factor of 2.3.

Published
2017

9. Implementation of passive functions on 0.18 μm CMOS at Ka-Band

Author

Mohd Khairul Mohd Salleh, Gaetan Prigent, and Noriza Othman

Subjects
010302 applied physics, Engineering, business.industry, 020206 networking & telecommunications, 02 engineering and technology, Substrate (electronics), Dielectric, 01 natural sciences, Line width, Electronic circuit simulation, Microstrip, CMOS, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Optoelectronics, Ka band, business, Microwave
Abstract

A simplified model of microstrip line, implemented on a 0.18 μm CMOS technology at 36 GHz is presented. The technology comprises 6 metal layers and 11 layers of different substrates. The study shows that the 11-layer substrates CMOS technology can be assimilated to a single substrate with a dielectric constant of 4.1, having 6.9 μm of overall thickness. It is also found that, the line width that should be used to realize a 50-Ω microstrip lines is 12 um. The findings presented in this paper can accelerate the design process of microwave passive functions involving microstrip lines on such COMS technology, via the utilization circuit simulation software.

Published
2016

10. Radiation Characteristics of a Coplanar Waveguide Series Gap in Ku Band

Author

Cedric Martel, Olivier Pascal, Juan Duran, Gaetan Prigent, and Pistre, Karine

Subjects
Materials science, business.industry, Coplanar waveguide, 020208 electrical & electronic engineering, [SPI.PLASMA] Engineering Sciences [physics]/Plasmas, 020206 networking & telecommunications, 02 engineering and technology, Radiation, Ku band, Capacitance, Line (electrical engineering), law.invention, Capacitor, law, Electric field, Etching, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, business
Abstract

The radiation of a series gap in a coplanar waveguide (CPW) line has been studied for Ku band applications. While theoretical models usually describe accurately the capacitance of the gap, they fail to include the radiation loss. This paper shows that it is a relevant phenomenon in Ku Band when the width of the line is close to 1mm and low precision etching is employed (low cost printing technology). Additionally, a technique for the reduction of such losses is presented and evaluated.

Published
2016

11. DESIGN AND FABRICATION OF RF-MEMS SWITCH FOR V-BAND RECONFIGURABLE APPLICATION

Author

Jinyu Ruan, Gaetan Prigent, Thanh Mai Vu, Robert Plana, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (UMR 3192) (Lab-STICC), Université européenne de Bretagne - European University of Brittany (UEB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), Département Electronique - UFR Sciences et Techniques - Université de Brest, Université de Brest (UBO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)

Subjects
Microelectromechanical systems, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Fabrication, Materials science, business.industry, Process (computing), Optoelectronics, Electrical and Electronic Engineering, Condensed Matter Physics, business, Electronic, Optical and Magnetic Materials, V band, Characterization (materials science)
Abstract

International audience; This paper presents a study of RF MEMS switch designed to be integrated in tunable filters for applications from W-frequency band to V-frequency band. Along the whole process, we go into detail of each procedure to present a complete study from design to fabrication and characterization of a RF-MEMS switch. The proposed concepts are validated by experimental results.

Published
2012

12. Characterization of CPW transmission lines and 60GHz DBR filters in 0.25µm BiCMOS technologly

Author

Pedro Rynkiewicz, Fabio Coccetti, Matthias Wietstruck, Mehmet Kaynak, Anne-Laure Franc, Gaetan Prigent, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), RF Microtech France, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Pistre, Karine, Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and IHP - Leibniz-Institut für innovative Mikroelektronik

Subjects
010302 applied physics, Materials science, [SPI.OTHER] Engineering Sciences [physics]/Other, business.industry, 020206 networking & telecommunications, 02 engineering and technology, BiCMOS, 01 natural sciences, Bicmos technology, Microstrip, Resonator, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Electric power transmission, Filter (video), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Insertion loss, Optoelectronics, business, Electrical impedance
Abstract

International audience; In this paper, CPW transmission lines and Dual Behavior Resonator (DBR) filters implemented in SiGe BiCMOS 0.25-μm technology are presented. Three CPW lines, whose characteristic impedances are between 35 Ω and 80 Ω, exhibit attenuation loss lower than 0.7 dB/mm at 60 GHz. Two DBR filters based either on microstrip or on CPW transmission lines are compared. The filter with microstrip lines has already been measured and exhibits 11.6% of 3-dB relative fractional bandwidth (FEWmb) and 5.4 dB of insertion losses at 60 GHz. The second one is supposed to have similar performance with lower insertion loss (3.3 dB) and its measurement will be available for the conference.

Published
2015

13. Substrate integrated waveguide filter design with wave concept iterative procedure

Author

N. Raveu, Olivier Pigaglio, K. Al-Abdullah, A. Ismail Alhzzoury, Gaetan Prigent, and Henri Baudrand

Subjects
Waveguide (electromagnetism), Engineering, Waveguide filter, business.industry, Substrate (electronics), Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Reduction (complexity), Band-pass filter, Filter (video), Electronic engineering, Optoelectronics, Sensitivity (control systems), Electrical and Electronic Engineering, business, Microwave
Abstract

A bandpass filter in substrate integrated waveguide (SIW) technology is designed with its suitable excitation. Sensitivity analysis of the SIW filter electrical response toward the number and positions of metallic via holes are performed using wave concept iterative procedure. It leads to a reduction of the number of vias with identical performance of the filter. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2939–2942, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26381

Published
2011

14. WCIP APPLIED TO ACTIVE PLASMA CIRCUITS

Author

Thierry Callegari, Henri Baudrand, Nathalie Raveu, Gaetan Prigent, and Pagès, Nathalie

Subjects
Materials science, [SPI] Engineering Sciences [physics], business.industry, Plasma, Substrate (electronics), Plasma oscillation, Electronic, Optical and Magnetic Materials, 3EP, Optics, Physics::Plasma Physics, Physics::Space Physics, Optoelectronics, Sensitivity (control systems), Center frequency, business, Electronic circuit
Abstract

The Wave Concept Iterative Procedure is validated for multi-layered substrate with frequency dependent and negative index media. By shifting the plasma frequency, reconfigurable filter design is proposed with a center frequency tunability of 25%. Sensitivity to collisional plasma is proposed.

Published
2011

15. Synthesis of quarter wavelength side-coupled ring (QSCR) resonator applications to bandpass filters design

Author

Mohd Khairul Mohd Salleh, Olivier Pigaglio, Gaetan Prigent, and R. Crampagne

Subjects
Engineering, business.industry, Size reduction, Electrical engineering, Condensed Matter Physics, Ring (chemistry), Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Wavelength, Resonator, Band-pass filter, Optoelectronics, Electrical and Electronic Engineering, business, Microwave
Abstract

This article deals with the design of dual-mode ring resonator fed by quarter wavelength coupled-lines and its applications for bandpass filters. A specific synthesis was developed for ring-based resonator which made ease the design of further bandpass filters. Three compact bandpass filters were designed at 2 GHz. Comparison between experiments and simulated results proved both synthesis accuracy and QSCR-based filters efficiency toward electrical performances and size reduction. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 307–312, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23067

Published
2008

16. Quarter-Wavelength Side-Coupled Ring Resonator for Bandpass Filters

Author

O. Pigaglio, Gaetan Prigent, Mohd Khairul Mohd Salleh, and R. Crampagne

Subjects
Engineering, Radiation, business.industry, Bandwidth (signal processing), Condensed Matter Physics, Microstrip, Resonator, Optics, Band-pass filter, Insertion loss, Electrical and Electronic Engineering, Center frequency, business, Passband, Helical resonator
Abstract

This paper deals with a dual-mode ring resonator fed by quarter-wavelength side-coupled lines. The resonator synthesis was developed so as to fix the central frequency, bandwidth, and transmission zeros frequencies, as well as the insertion loss in the passband. Based on this resonator, several bandpass filters were designed, which include the cascaded rings and the combination of such ring resonator with coupled line sections. Simulations are proposed throughout the paper to illustrate the various possibilities offered by the concept. The filters' experimental results in microstrip technology are also presented to validate the idea.

Published
2008

17. Planar tunable filters in mm-frequency range

Author

Gaetan Prigent, Thanh Mai Vu, and Mohd Khairul Mohd Salleh

Subjects
Waveguide filter, Band-pass filter, Computer science, Filter (video), Electronic filter topology, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Prototype filter, Distributed element filter, Constant k filter, Electronic filter, Hardware_LOGICDESIGN
Abstract

This invited paper discusses the implementation of tunable bandpass filters for millimeter frequency range. Several aspects will be addressed: the development of original filter topologies for which we develop synthesis for both the filter itself and tunable filter incorporating the tuning element in the synthesis. We will discuss the technology implementation to improve performances nominal filter but also to ensure the tunability using either classical techniques such as MEMs or technologies in technological breakthrough such as plasma or microfluidic techniques.

Published
2014

18. Design of Narrow-Band DBR Planar Filters in Si–BCB Technology for Millimeter-Wave Applications

Author

S. Le Maguer, G. Six, F. Le Pennec, Eric Rius, Henri Happy, Gaetan Prigent, and Cédric Quendo

Subjects
Engineering, Radiation, business.industry, Design of experiments, Topology (electrical circuits), Condensed Matter Physics, Resonator, chemistry.chemical_compound, Planar, chemistry, Band-pass filter, Benzocyclobutene, Filter (video), Extremely high frequency, Electronic engineering, Electrical and Electronic Engineering, business
Abstract

This paper discusses a method used to design planar bandpass filters for millimeter-wave applications in U- and W-band frequency ranges. For technical reasons, these filters have to be implemented on silicon-based technology. So as to decrease the insertion losses levels inherent in silicon substrate, we propose a thin-film microstrip-like technology implemented on a benzocyclobutene layer. In addition, a dual-behavior resonator-based filter topology enabled us to fit a hardened specification. In association with this new topology, we employed an automated design procedure that combines both circuit and full-wave simulations. It is based on a statistical sensitivity study performed by design-of-experiment analysis.

Published
2004

19. Technological evolution and performances improvements of a tunable phase-shifter using liquid crystal

Author

Fabrice Huret, Noham Martin, Gaetan Prigent, Paul Laurent, and Philippe Gelin

Subjects
Engineering, business.industry, Dielectric, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Microstrip, Electronic, Optical and Magnetic Materials, Stub (electronics), Optics, Transmission line, Liquid crystal, Electrical and Electronic Engineering, business, Phase shift module, Microwave, Electronic circuit
Abstract

The topic of this paper is the study of electrically tunable phase-shifters based on the use of liquid crystals. The dielectric characterization of the commercial liquid crystal involved in this study allows us to determine its dielectric permittivities (with and without DC voltage applied) and then its dielectric anisotropy. In this way, two phase-shifter configurations were studied. Every devices propose inverted microstrip line. The two circuits have been realized with coplanar accesses to be use in the millimeter-frequency range. With the aim to improve the phase shift parameter (in °/GHz/cm), our work aims to reduce the transmission line. Instead of a rectilinear transmission line, this one is based on a symmetric stub line. The phase shift obtained is enhanced from 0.87°/GHz/cm to 2.77°/GHz/cm. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 338–341, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20463

Published
2004

21. Probe pitch and taper feed lines dispersive effect on the measured characteristic impedances

Author

Anne Laure Franc, Gaetan Prigent, Emmanuel Pistono, Mohd Khairul Mohd Salleh, Philippe Ferrari, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Optics, business.industry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Electrical impedance, ComputingMilieux_MISCELLANEOUS, Characteristic impedance, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2014

22. Design of an input multiplexer using dual-band planar filters

Author

Gaetan Prigent and Thanh Mai Vu

Subjects
Band-pass filter, Hardware_GENERAL, Computer science, GSM, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Prototype filter, Topology (electrical circuits), Multi-band device, Multiplexer, Microstrip, UMTS frequency bands
Abstract

The design of an input quadriplexer is presented. It is based on a novel topology of ring-based dual-band filters. Two 2nd-order dual-band filters are implemented in microstrip technology and measured. These filters are then set in parallel to form the final IMUX dedicated to telecommunications standards: GSM (1.8 GHz), UMTS (2.1 GHz), Wi-Fi (2.45 GHz) and Wi-Max (2.9 GHz). The proposed concepts are validated by measurement results.

Published
2013

23. Multiple-Rings Filter with Dissociated Transmission Zeros

Author

Olivier Pigaglio, Mohd Khairul Mohd Salleh, Gaetan Prigent, and Pistre, Karine

Subjects
Physics, Waveguide filter, Band-pass filter, Filter (video), Control theory, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Electronic filter topology, Prototype filter, Distributed element filter, Constant k filter, Topology, m-derived filter
Abstract

Cascaded-rings bandpass filter is presented with dissociated transmission zeros. While the position of the transmission zeros is largely depending on the coupled-line sections of the rings, less coupling level is required in some of the coupled-line sections, and the design will not be limited to some fixed values of impedance throughout the topology. This improves the degree of the liberty in designing cascaded rings filter for high selectivity applications. Three examples that employ three, four and five quarter-wavelength side-coupled ring resonator basic cells are given, where each of them leads to bandpass response of 8th, 11th and 14th order, respectively. While very sharp bandpass response can be achieved, the different positions of transmission zeros also help in improving the out-of-band rejection. An example of realization is presented for a bandpass filter with three rings, on FR4 substrate.

Published
2013

24. Cascaded ring bandpass filters with high out-of-band rejection

Author

Zuhani Ismail Khan, Gaetan Prigent, Mohd Khairul Mohd Salleh, S. K. M. Khanfar, and Nadia Abdul Wahab

Subjects
Physics, Waveguide filter, Electronic filter topology, Electronic engineering, Prototype filter, Topology (electrical circuits), Distributed element filter, Topology, Passband, Sallen–Key topology, m-derived filter
Abstract

This paper presents two microwave bandpass filter topologies which are based on two different ways of series-cascading two quarter-wavelength side-coupled ring resonators. In the first topology, a quarter-wavelength impedance inverter is used to connect the two rings. As each ring gives two poles, a 4th order bandpass filter is obtained from the topology. The impedance inverter is replaced by a quarter-wavelength coupled line in the second topology. In this case, two half-wavelength resonators are formed at the interconnection between the rings and the coupled line, leading to the creation of an extra of two poles in the passband response. Thus, a 6th order filter is obtained from the second topology. Both topologies are realized at 2 GHz center frequency using microstrips on epoxy-glass substrate. Measurement results are found to be in good agreement with the simulations with very high out-of-band rejection level.

Published
2012

25. Development of a microsystem based on a microfluidic network to tune and reconfigure RF circuits

Author

Cédric Quendo, Benjamin Potelon, Eric Rius, Jean-François Favennec, Anne Marie Gué, Norbert Fabre, Véronique Conédéra, Ali Boukabache, Gaetan Prigent, Daouda Lamine Diedhiou, Stéphane Pinon, Équipe Nano Ingénierie et Intégration des Systèmes (LAAS-N2IS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Lab-STICC_UBO_MOM_DIM, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Ecole Nationale Supérieure d'Electrotechnique, d'Electronique, d'Informatique, d'Hydraulique et de Télécommunications (ENSEEIHT), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées, Lab-STICC_ENIB_MOM_DIM, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulouse (UT)-Université de Toulouse (UT)

Subjects
Permittivity, Materials science, business.industry, Mechanical Engineering, Microfluidics, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, 021001 nanoscience & nanotechnology, Band-stop filter, Microstrip, Electronic, Optical and Magnetic Materials, Stub (electronics), [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Mechanics of Materials, Microsystem, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Microwave, Electronic circuit
Abstract

International audience; This special issue presents devices and the results of a tunable microwave microsystem associating RF circuits and microfluidic components. A channel is buried inside the substrate of a microstrip waveguide. This channel is located beneath a resonant stub. With this configuration a microfluidic passive tunable filter can be fabricated. Dielectric fluids are used to disrupt the electric field in a microstrip structure and thus modify the effective permittivity of the substrate. In this work, a notch filter is realized with an open-ended quarter-wavelength stub placed on top of a hollow SU-8 structure. This structure offers two advantages: channels can easily be fabricated and a reduction of SU8 losses. The filter shows a good performance; the initial cut-off frequency of 25 GHz shifts more than 20% when deionized water is used in fluidic channels. And the shape of RF function is kept throughout the range.

Published
2012

26. Fabrication and characterization of a fully integrated biosensor associating microfluidic device and RF circuit

Author

Véronique Conédéra, Benjamin Potelon, Eric Rius, A-M Gue, A. Boukabache, J-F. Favennec, Cedric Quendo, Gaetan Prigent, Stéphane Pinon, Daouda Lamine Diedhiou, David Bourrier, Équipe Nano Ingénierie et Intégration des Systèmes (LAAS-N2IS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Lab-STICC_UBO_MOM_DIM, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Ecole Nationale Supérieure d'Electrotechnique, d'Electronique, d'Informatique, d'Hydraulique et de Télécommunications (ENSEEIHT), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées, Lab-STICC_ENIB_MOM_DIM, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulouse (UT)-Université de Toulouse (UT)

Subjects
Materials science, Fabrication, microwave, Resonator, Microfluidics, microfluidic, SU8, 02 engineering and technology, Microstrip, sensor, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electronic circuit, filter, business.industry, Attenuation, 020206 networking & telecommunications, 021001 nanoscience & nanotechnology, Cutoff frequency, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Filter (video), Optoelectronics, 0210 nano-technology, business, Biosensor
Abstract

International audience; This paper presents the first results of the fabrication and characterization of a biological sensor based on two complementary parts. A microfluidic channel along with a micromachined stop-band filter are used to detect the type of fluid which flows beneath the electronic circuit. The tridimensional (3D) structure of the microstrip technology is integrated using SU8 material which thus supports the use of buried channels. Besides being a method without contact, this bio-sensor avoids evaporation, contamination, or label fixation. Changes to the cutoff frequency and attenuation allow us to differentiate three values of the salt in water concentration with a maximum variation of attenuation of 6.5%.

Published
2012

27. Series coupled microwave ring resonators

Author

Mustafar Kamal Hamzah, Mohd Khairul Mohd Salleh, Gaetan Prigent, and Mohd Tarmizi Ali

Subjects
Materials science, business.industry, Optical ring resonators, Order (ring theory), Ring (chemistry), law.invention, Resonator, Band-pass filter, law, Filter (video), Electronic engineering, Optoelectronics, business, Passband, Microwave
Abstract

An odd number of one-wavelength ring resonators are proposed to be directly series-connected along a quarter-wavelength of their sides to exhibit a bandpass response with very high rejection level. As each ring presents a dual-mode response, the order of the overall bandpass response will be equal to two times the number of rings being used. Furthermore, the pseudo-elliptic characteristics of the ring resonators will enhance the selectivity of the resulting filter since a transmission zero is obtained at both sides of the passband. An application of the concept is implemented for the case of three series-connected rings that exhibits a 6th order bandpass response centered at 2 GHz. Fabricated on epoxy-glass substrate, the results show a very good agreement between the simulation and measurement with a very good rejection level surpassing 50 dB up to 3.5 GHz.

Published
2011

28. Series-cascaded ring resonators for compact microwave filter with high rejection

Author

Rahimi Baharom, Mustafar Kamal Hamzah, Gaetan Prigent, Mohd Khairul Mohd Salleh, and Ihsan Mohd Yassin

Subjects
Physics, Voltage-controlled filter, business.industry, Butterworth filter, Optical ring resonators, Band-stop filter, law.invention, Optics, Band-pass filter, law, business, High-pass filter, Active filter, m-derived filter
Abstract

Very selective fifth order bandpass ring filter is presented based on two series-connected quarter-wavelength side-coupled ring resonators. As the connection between the two quarter-wavelength lines forms a half-wavelength resonator, an extra pole is produced, leading to a total of five poles since each ring resonator presents two poles. This adds to the compactness of the overall filter and improves the selectivity and rejection. Centered at 2 GHz, the filter layout is simulated and implemented on FR4 substrate using microstrips. Filter simulation and measurement results are presented to validate the idea.

Published
2010

29. Wide-band microwave bandpass ring filter

Author

Mohd Khairul Mohd Salleh, Olivier Pigaglio, and Gaetan Prigent

Subjects
Physics, Dielectric resonator antenna, business.industry, Bandwidth (signal processing), Optical ring resonators, Microstrip, law.invention, Resonator, Optics, Band-pass filter, law, Electronic engineering, business, Helical resonator, Ground plane
Abstract

This paper presents a wide-band 2nd order bandpass filter based on a dual-mode ring resonator. A slot ring is constructed in the ground plane and coupled to quarter-wavelength microstrip feedlines. This way, the coupling gap between the ring resonator and the quarter-wavelength lines can be reduced to the value of the substrate thickness. Thus, the coupling of the resonator can be improved and the bandwidth of the filter is increased. Simulation and measurement results are proposed throughout the paper to illustrate the concept and to validate the idea.

Published
2010

30. Membrane technology for band-pass filter in W-band

Author

Robert Plana, Gaetan Prigent, Thanh Mai Vu, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (UMR 3192) (Lab-STICC), Université européenne de Bretagne - European University of Brittany (UEB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), Département Electronique - UFR Sciences et Techniques - Université de Brest, Université de Brest (UBO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)

Subjects
Engineering, Waveguide filter, W-band, Broadband filter, business.industry, HFSS, Coplanar waveguide, Condensed Matter Physics, Composite image filter, Silicon membrane technology, Atomic and Molecular Physics, and Optics, Narrow band filter, Electronic, Optical and Magnetic Materials, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Band-pass filter, W band, Electronic engineering, Optoelectronics, Prototype filter, Electrical and Electronic Engineering, business, Microwave
Abstract

This article deals with the design of coplanar waveguide band-pass filters in W-band implemented on silicon membrane technology. Several topologies of filters are developed at 94 GHz: broadband filters with stubs, narrow band filters with coupled-lines, and a pseudo-elliptical ring. Different concepts are validated by electromagnetic simulations HFSS and by experimental results. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1393–1397, 2010; Published online in Wiley InterScience (www.interscience. wiley.com). DOI 10.1002/mop.25216

Published
2010

31. Widely Tunable High-Q SIW Filter using Plasma Material

Author

A. Djermoun, Gaetan Prigent, Thierry Callegari, N. Raveu, and Pistre, Karine

Subjects
Materials science, business.industry, [SPI.OTHER] Engineering Sciences [physics]/Other, Capacitive sensing, Bandwidth (signal processing), Ranging, Resonator, Q factor, Electronic engineering, Insertion loss, Optoelectronics, Radio frequency, business, Voltage
Abstract

This paper presents a novel concept to tune the resonant frequency of an evanescent-mode substrate integrated waveguide resonator while maintaining a high-Q in the tuned frequency range. The tunability is based on the insertion of vertical switchable capacitive post within SIW cavity. The filter is tuned from 18 GHz to 7.5 GHz, with insertion losses ranging from 0.8 dB to 2 dB in the frequency range for 1.4% bandwidth filter. The main interest of this work is the use of argon material under high pressure and DC voltage to generate a dense plasma media.

Published
2010

32. Synthesis for tunable dual behavior resonator

Author

Thanh Mai Vu, Gaetan Prigent, Robert Plana, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (UMR 3192) (Lab-STICC), Université européenne de Bretagne - European University of Brittany (UEB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), Département Electronique - UFR Sciences et Techniques - Université de Brest, Université de Brest (UBO), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP)

Subjects
[SPI.OTHER]Engineering Sciences [physics]/Other, Microelectromechanical systems, Materials science, business.industry, Automatic frequency control, Filtering theory, Topology (electrical circuits), law.invention, Dual (category theory), Capacitor, Resonator, law, Electronic engineering, Optoelectronics, Center frequency, business
Abstract

International audience; We propose a novel topology for dual behavior resonator (DBR) allowing a greater control of the central frequency. This topology is used in the design of a self-matching resonator with tunable center frequency for which we develop a specific synthesis.

Published
2009

33. Achievable bandwidth of a quarter wavelength side-coupled ring resonator

Author

Gaetan Prigent, Z. Ismail Khan, and Mohd Khairul Mohd Salleh

Subjects
Physics, business.industry, Bandwidth (signal processing), Optical ring resonators, Microstrip, law.invention, Wavelength, Resonator, Band-pass filter, law, Filter bandwidth, Electronic engineering, Optoelectronics, business, Electrical impedance
Abstract

Studies on the achievable range of bandwidth of a side-coupled ring resonator bandpass filter are presented. The elements of the resonator susceptible on varying the filter bandwidth are identified and design solutions are given in order to push the bandwidth to its minimum and maximum values. Based on the side-coupled ring resonator topology, two microstrip filters were designed at 10 GHz to achieve the narrowest and widest bandwidth with respect to insertion losses and technological limitation. Results of the studies with the given technology show that the ring resonator is suitable to address bandwidth from narrow (3.6%) to wide (31%). These concepts are validated through simulations and experiments for filters implemented on alumina substrate.

Published
2009

34. MEMs based reconfigurable dual behavior resonator using BCB technology in W-frequency range

Author

Thanh Mai Vu, Gaetan Prigent, and Robert Plana

Subjects
Microelectromechanical systems, Range (particle radiation), Resonator, Materials science, Filtering theory, Electronic engineering, Topology (electrical circuits), Network topology, Capacitance, Dual (category theory)
Abstract

This paper presents a novel tuneable resonator topology from W-frequency band to V-frequency band. The resonator is developed on TFMS structure using RF-MEMs implemented in Si-BCB technology. Specific synthesis are developed and validated through electromagnetic simulations.

Published
2009

35. Quarter wavelength side-coupled ring filters for V-band applications

Author

Mohd Khairul Mohd Salleh, Patrick Pons, R. Crampagne, and Gaetan Prigent

Subjects
Coupling, Materials science, business.industry, Coplanar waveguide, Microstrip, Resonator, chemistry.chemical_compound, Optics, Band-pass filter, chemistry, Filter (video), Benzocyclobutene, business, V band
Abstract

Designs of three bandpass filters based on quarter wavelength side-coupled ring resonator are presented for V-band applications. Centered at around 60 GHz with three different bandwidths of 2.4%, 6.2% and 11.27%, the filters are designed on a 25-mum-thick benzocyclobutene (BCB) substrate deposited on a 400-mum-thick silicon bulk. In the filter designs, three technology configurations involving multilayer microstrip and coplanar waveguide (CPW) environment are considered to achieve flexibility in coupling. Results from electromagnetic simulations of the filters are presented through this paper.

Published
2008

36. Design of bandpass filter in W-band on a silicon membrane

Author

T. M. Vu, Robert Plana, Laurent Bary, Alexandre Rumeau, Gaetan Prigent, and Laurent Mazenq

Subjects
Materials science, Electric power transmission, Narrowband, W band, Band-pass filter, Bandwidth (signal processing), Broadband, Electronic engineering, Prototype filter, Integrated circuit design
Abstract

The choice of membrane technology for filters in W-band was made considering the low dielectric losses observed in previous studies. Within this frequency range, the constraints related to losses and technological feasibility limit heavily the range of achievable impedances. Thus, this limits achievable bandwidth for broadband filters. Moreover for narrowband coupled-lines filters, we were faced with transmission lines shape-factor problems (wider than long). Therefore, we have chosen a narrowband pseudo-elliptic filter topology which has shown its efficiency and promising performances.

Published
2008

37. Bandpass filter for millimeter-wave applications up to 220 GHz integrated in advanced thin SOI CMOS technology on High Resistivity substrate

Author

Daniel Gloria, C. Raynaud, Frederic Gianesello, and Gaetan Prigent

Subjects
Materials science, Narrowband, CMOS, Band-pass filter, Filter (video), business.industry, Extremely high frequency, Electronic engineering, Optoelectronics, Silicon on insulator, Wafer, Center frequency, business
Abstract

This paper deals with the design of bandpass filters in V- and G-frequency band. A comparison between classical shunt-stub filter performances integrated in high resistivity (HR) silicon on insulator technology (SOI), standard CMOS and III-V technology is made. The use of HR SOI demonstrates performances comparable to state of the art III-V technologies up to G-band. These results evidence the impact of HR SOI wafer towards substrate losses reduction. Once the technology has proved its efficiency, implementation of a narrowband coupled-lines bandpass filter with central frequency of 60-GHz was investigated.

Published
2007

38. Design of Branch-Line Coupler in the G-Frequency Band

Author

Gaetan Prigent, Eric Rius, Karine Blary, Henri Happy, Sylvie Lepilliet, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire d'Electronique de l'ENSEEIIHT de Toulouse (LEN7), Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université de Toulouse (UT), Laboratoire d'Electronique et Systèmes de Télécommunications (LEST), and Université de Brest (UBO)-Ecole Nationale Supérieure des Télécommunications de Bretagne-Centre National de la Recherche Scientifique (CNRS)

Subjects
Silicon, Materials science, Frequency band, Millimeter wave technology, 02 engineering and technology, Transistors, Microstrip, [SPI]Engineering Sciences [physics], 03 medical and health sciences, G band, Broadband, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Hybrid coupler, Thin film, Center frequency, Dielectric substrates, 030307 microscopy, 0303 health sciences, business.industry, Space technology, Electrical engineering, Impedance, Attenuation, 020206 networking & telecommunications, Frequency, Millimeter wave radar, Rat-race coupler, business
Abstract

International audience; This paper deals with the design of broadband hybrid coupler in thin film microstrip (TFMS) technology for millimeter-wave applications in the G-band frequency range. The couplers to be designed are realized in BCB-based (benzo-cyclo-butene) technology. Classical 3-dB branch-line coupler is developed with 180-GHz central frequency. This coupler is used for the design of a wide-band matching network. Measurements performed in a wide frequency range up to 220-GHz attest from the design accuracy as well as the technological process quality

Published
2006

39. Design of wide-band branch-line coupler in the G-frequency band

Author

Sylvie Lepilliet, Eric Rius, Henri Happy, K. Blary, Gaetan Prigent, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire d'Electronique de l'ENSEEIIHT de Toulouse (LEN7), Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université de Toulouse (UT), Laboratoire d'Electronique et Systèmes de Télécommunications (LEST), and Université de Brest (UBO)-Ecole Nationale Supérieure des Télécommunications de Bretagne-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Frequency band, 020208 electrical & electronic engineering, Wide-band, 020206 networking & telecommunications, 02 engineering and technology, BCB-based technology, Microstrip, Branch-linecoupler, Rat-race coupler, Thin-Film Microstrip technology, [SPI]Engineering Sciences [physics], G band, Broadband, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Hybrid coupler, Center frequency, Wideband, G-Band
Abstract

International audience; This paper deals with the design of broadband hybrid coupler in thin film microstrip (TFMS) technology for millimeter-wave applications in the G-band frequency range. The couplers to be designed are realized in BCB-based technology. The technological process as well as transmission lines characterization and optimization in term of attenuation are described. Classical 3-dB branch-line coupler is developed with 180-GHz central frequency. Then, based on this topology, a broadband coupler using series matching networks is developed. Such a topology allows to reach bandwidth over 50 %, with very flat coupling. Measurements performed in a wide frequency range up to 220 GHz attest from the design accuracy as well as the technological process quality

Published
2006

40. Design of narrow band-pass planar filters for millimeter-wave applications up to 220 GHz

Author

Eric Rius, Henri Happy, Gaetan Prigent, Karine Blary, Sylvie Lepilliet, A. Cappy, Gilles Dambrine, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire d'Electronique de l'ENSEEIIHT de Toulouse (LEN7), Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université de Toulouse (UT), Laboratoire d'Electronique et Systèmes de Télécommunications (LEST), and Université de Brest (UBO)-Ecole Nationale Supérieure des Télécommunications de Bretagne-Centre National de la Recherche Scientifique (CNRS)

Subjects
Silicon, Narrowband, Computer science, Millimeter wave technology, Transposition (telecommunications), 02 engineering and technology, Transistors, Microstrip, law.invention, [SPI]Engineering Sciences [physics], Planar, Band-pass filter, law, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Microwave filters, Dielectric substrates, business.industry, 020208 electrical & electronic engineering, Transistor, Electrical engineering, 020206 networking & telecommunications, Frequency, Millimeter wave radar, Band pass filters, Design methodology, Extremely high frequency, Prototype filter, business
Abstract

International audience; This paper deals with the design of passive band-pass filters in thin film microstrip (TFMS) technology for millimeter-wave application in G-band frequency range. The filters to be designed are realized on a BCB-based technology. Quality of the design method as well as technological process has already been fully tested in W-band at 94-GHz. Thus, transposition to higher frequency is investigated at 180 GHz. In such a frequency range, designers are faced to technological point locks. So as to overcome them, specific design techniques are discussed for several filter realization

Published
2005

41. Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz

Author

Gaetan Prigent, G. Six, Gilles Dambrine, Eric Rius, Henri Happy, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Materials science, Fabrication, Silicon, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Integrated circuit, 7. Clean energy, Microstrip, law.invention, chemistry.chemical_compound, Benzocyclobutene, law, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Monolithic microwave integrated circuit, Radiation, business.industry, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, Condensed Matter Physics, chemistry, Optoelectronics, business, Microwave
Abstract

This paper presents the results of the fabrication and characterization up to 220 GHz, of thin-film microstrip (TFMS) transmission-line structures. The transmission lines are fabricated on a low-resistivity silicon substrate (/spl rho/=10 /spl Omega/ /spl middot/ cm). TFMS lines with a thick dielectric layer (20 /spl mu/m of benzocyclobutene is used here) present losses of 0.3 dB/mm at 94 GHz and 0.6 dB/mm at 220 GHz. Thus, using this technology, it will be possible to develop monolithic microwave integrated circuits on a silicon substrate.

Published
2005

42. Improvement of an inverted microstrip line-based microwave tunable phase-shifter using liquid crystal

Author

Noham Martin, Fabrice Huret, Gaetan Prigent, Philippe Gelin, and Paul Laurent

Subjects
Permittivity, Liquid-crystal display, Materials science, business.industry, Physics::Optics, Dielectric, Microstrip, law.invention, Optics, law, Liquid crystal, Transmission line, business, Phase shift module, Microwave
Abstract

This paper deals with the study of electrically tunable phase-shifters based on the use of liquid crystals. First, the dielectric characterization of the commercial liquid crystal involved in our investigations allowed us to determine its dielectric anisotropy. Secondly, two phase-shifter configurations were studied. Both structures propose inverted microstrip line with coplanar accesses, but they are based on a different design of the transmission line. The measurements carried out with the first one evidenced an efficient phase shift. The second one showed considerable improvement in performances.

Published
2003

43. Wide and narrow-band bandpass coplanar filters in the W-frequency band

Author

A. Cappy, Gaetan Prigent, Henri Happy, S. Boret, Eric Rius, Gilles Dambrine, Laboratoire d'Electronique et Systèmes de Télécommunications (LEST), Université de Brest (UBO)-Ecole Nationale Supérieure des Télécommunications de Bretagne-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Engineering, Frequency band, Acoustics, 02 engineering and technology, STRIPS, Classification of discontinuities, monolithic microwave integrated circuit (MMIC), law.invention, Band-pass filter, law, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Insertion loss, Bandpass filter, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Waveguide filter, Radiation, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, Filter (signal processing), Condensed Matter Physics, Electric power transmission, coplanar technology, W-frequency band, business
Abstract

This paper deals with the design of passive coplanar devices in the W-frequency band. As long as coplanar transmission lines are correctly dimensioned, analytical models based on quasi-TEM approximation can be used. Such models are associated with a correct definition of the reference planes at the junctions and employed for junction discontinuities, T- and cross-junctions. In order to validate these assertions, simulated and experimental data on classical quarter-wavelength shunt-stub filters are first presented. Then the design of traditional coupled-line filters is examined. The problems in terms of insertion loss associated with these kinds of narrow-band applications are discussed here. Minimization of insertion losses requires increasing the width of the strips. Consequently, the design becomes complex and modeling using transmission-line models less accurate. Nevertheless, as an optimization procedure is needed to tune the filter theoretically, such a very fast design method is necessary. Simulated and experimental results in the range 500 MHz to 110 GHz are compared throughout the paper.

Published
2003

44. DOE based design method for coupled-lines narrow bandpass filter response improvement

Author

Marcel Le Floch., Sandrick Le Maguer, Michel Ney, Eric Rius, Gaetan Prigent, François Le Pennec, Département Micro-Ondes (MO), Université européenne de Bretagne - European University of Brittany (UEB)-Télécom Bretagne-Institut Mines-Télécom [Paris] (IMT), and Télécom Bretagne (devenu IMT Atlantique), Ex-Bibliothèque

Subjects
Waveguide filter, Engineering, business.industry, Acoustics, 020208 electrical & electronic engineering, Electronic filter topology, 020206 networking & telecommunications, 02 engineering and technology, Constant k filter, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Band-pass filter, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Prototype filter, business, Sallen–Key topology, m-derived filter, Electronic filter
Abstract

International audience; In this paper we discuss about various modifications of classical coupled-lines narrow bandpass filter to obtain some frequency response improvement. The first modification concerns the broadening of the resonator strip-widths to improve their unloaded Q-factor. The second modification consists in replacing the in/out coupled lines section by tapped lines feeding. Finally a transmission zero is added using a geometrical modification that favor coupling between non-adjacent resonators. The theoretical investigation is carried out through a DOE based sensitivity study using both a circuit modeling approach and a full wave analysis. Theoretical and experimental results on microstrip filters are compared.; In this paper we discuss about various modifications of classical coupled-lines narrow bandpass filter to obtain some frequency response improvement. The first modification concerns the broadening of the resonator strip-widths to improve their unloaded Q-factor. The second modification consists in replacing the in/out coupled lines section by tapped lines feeding. Finally a transmission zero is added using a geometrical modification that favor coupling between non-adjacent resonators. The theoretical investigation is carried out through a DOE based sensitivity study using both a circuit modeling approach and a full wave analysis. Theoretical and experimental results on microstrip filters are compared.

Published
2002

45. A New Coplanar Band-pass Filter Topology For Improving The Control of Narrowband Band-pass Filter Response

Author

Gaetan Prigent, Marcel Le Floch., Eric Rius, Sandrick Le Maguer, Michel Ney, and François Le Pennec

Subjects
Physics, Narrowband, Band-pass filter, Electronic filter topology, Bandwidth (signal processing), Electronic engineering, Prototype filter, Network synthesis filters, Constant k filter, Topology, m-derived filter, Computer Science::Information Theory
Abstract

A new topology of narrowband band-pass filter based on modification of classical tapped-line interdigital coupled lines filters is presented. From a sensitivity point of view, this new topology appears as very attractive when designing very narrowband filters. Theoretical and experimental results in coplanar technology are presented. The theoretical study is carried out by both a circuit modelling approach (HP-MDS) and a full wave analysis (Agilent-Momentum).

Published
2001

46. Different spectral scale level in the wave concept iterative procedure to solve multi-scale problems

Author

Henri Baudrand, Olivier Pigaglio, N. Raveu, and Gaetan Prigent

Subjects
Microstrip antenna, Scale (ratio), Mesh generation, Iterative method, Computer science, Polygon mesh, Electrical and Electronic Engineering, Algorithm, Electronic circuit, Network analysis
Abstract

An improvement of the wave concept iterative procedure (WCIP) is proposed that avoids excessive computational storage and simulation times for bulky devices. The description of such features has been a major difficulty since both small and large dimensions exist which led to hardened constraints when accuracy is required. An alternative consists in the use of appropriate modifications and interfaces of coarse numerical meshes (macropixel), which allows implementation of fine features within the circuit area. These concepts are tested and validated through comparison between measurement and simulated results. This method is applied on multi-scale circuits that could not be simulated before because of memory storage limitation.

Published
2010

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