110 results on '"Gallagher, James C."'
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2. Using machine learning with optical profilometry for GaN wafer screening
3. Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
4. Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide
5. Process Optimization for Selective Area Doping of GaN by Ion Implantation
6. Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance
7. Effect of Chemical Pressure on High Temperature Ferrimagnetic Double Perovskites Sr2CrOsO6 and Ca2CrOsO6
8. Microstructural evolution of extended defects in 25μ m thick GaN homo-epitaxial layers
9. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance
10. Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN P-N Diode
11. The effect of chemical pressure on the structure and properties of A2CrOsO6 (A=Sr, Ca) ferrimagnetic double perovskite
12. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
13. A Simple Edge Termination Design for Vertical GaN P-N Diodes
14. Using Data Science and Machine Learning to Predict the Failure Rate of Pin Diodes
15. Impact of Substrate Defects on Vertical GaN Device Leakage Behavior
16. Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices.
17. Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers.
18. Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes
19. Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination
20. High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction p-n Diodes
21. Characterization and Modeling of a 1.3 kV Vertical GaN Diode
22. Using Wafer Scale Optical Profilometry to Estimate the Failure Rate of Vertical Pin GaN Diodes
23. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility.
24. Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
25. Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes.
26. (Invited) GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices
27. A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes
28. Structural and electronic properties of Si- and Sn-doped (−201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres
29. Publisher’s Note: “Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices” [J. Appl. Phys 127, 215703 (2020)]
30. Room-temperature skyrmions in strain-engineered FeGe thin films
31. Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures
32. Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation
33. Market Basket Analysis with Shortened Web Link Click Data
34. Demonstration of CuI as a P–N heterojunction toβ-Ga2O3
35. (Invited) Ion Implantation and Activation of n- and p-Type Dopants in GaN
36. GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging
37. Vertical power devices enabled by bulk GaN substrates
38. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
39. Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates.
40. Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors
41. Vertical Power Devices Enabled by Bulk GaN Substrates.
42. Contribution from Ising domains overlapping out-of-plane to perpendicular magnetic anisotropy in Mn4N thin films on MgO(001)
43. Large-amplitude acoustic solitary waves in a Yukawa chain
44. Dusty plasma (Yukawa) rings
45. High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen.
46. (Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices.
47. Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes
48. Thickness dependence of spin Hall angle of Au grown onY3Fe5O12epitaxial films
49. Exceptionally high magnetization of stoichiometric Y3Fe5O12 epitaxial films grown on Gd3Ga5O12
50. ChemInform Abstract: The Effect of Chemical Pressure on the Structure and Properties of A2CrOsO6 (A: Sr, Ca) Ferrimagnetic Double Perovskite.
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