18 results on '"Giles, L.F."'
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2. Formation energies and relative stability of perfect and faulted dislocation loops in silicon
3. Point defect injection during nitrous oxidation of silicon at low temperatures
4. Transient enhanced diffusion of B at low temperatures under extrinsic conditions
5. Process optimisation for direct formation of device worthy thin film SIMOX structures using 90 keV oxygen implantation
6. Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion
7. Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients
8. Estimation of the Number of Injected Interstitial Atoms during Nitrous Oxidation of Silicon
9. Toxicity of copper, lead, nickel and zinc in agar culture to aerobic, diazotrophic bacteria extracted from waste-derived compost
10. Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation
11. An investigation of the role of the time averaged ion beam current density upon the defect densities in thin film SIMOX
12. A new chemical etch for defects studies in very thin film (< 1000 Å) SIMOX material
13. New etchant for crystallographic defect studies in thin SOI materials (<1000 Å)
14. Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation
15. Formation of oxidation induced stacking sacrificial thinning of SIMOX materials.
16. Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation.
17. Growth and retrogrowth of oxidation induced stacking faults (OISF) in SIMOX.
18. Process optimisation for direct formation of device worthy thin film SIMOX structures using 90 keV oxygen implantation
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