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We demonstrate an integrated device in SOI platform for the coupling of OAM modes into multimode fibers. The coupler is tunable for different OAM modes with low intermodal crosstalk.

In this review tutorial, the workflow for the development of products based on Photonic Integrated Circuits (PIC) will be presented. The steps of a full development cycle, from system concept to test and packaging will be reviewed. The PIC platforms available for fabrication will be presented and compared, and their maturity will be discussed. Finally, a discussion about the Technology Readiness Levels (TRLs) and the requirements for each step, from prototype to pre-production will be made.

The exponential demand for bandwidth in data centers is on high alert with the increase in data traffic. In this scenario, the design of optical modulators is crucial for the continuous evolution of communication systems. For data center interconnect (DCI) applications, this mean that modulators should offer high bandwidth and low optical loss. In addition, devices must operate with low power consumption and be compatible with complementary metal–oxide–semiconductor (CMOS) processes for low-cost and large-scale manufacturing. These facts show the importance of advancement in Silicon (Si) modulators solutions, since they have the potential to fulfill all these requirements. However, designing a device that meets all these requirements at the same time is still challenging, because there are several trade-offs problems involved for which different Silicon modulators types are not yet able to solve. In this context, this paper reviews the challenges in Silicon photonics (SiPh) modulators for data center interconnect applications.

This work presents a capacitive modulator design and modeling of a new waveguide architecture using silicon and poly-si technologies. We use a methodology involving the entire lumped-type modulator design process, from the optical design to the small-signal RF analysis. By means of geometric and physical parameters adjustments, the trade-offs among several figures of merit are analyzed in this paper. Due to the waveguide configuration, it is shown that the modulator can improve the trade-off between $V_{\pi }$ and bandwidth compared to the state-of-the-art for this kind of device. For instance, the best combinations are $V_{\pi }\simeq$ 1 V @ 20.4 GHz and $V_{\pi }$ = 5.7 V @ $\sim$ 31 GHz, with equivalent optical losses of 3 dB and 1.1 dB, respectively.

We present and compare two novel integrated devices in SOI platform for the coupling of OAM modes into multimode fibers. Simulation results show generated OAM beams and mode overlap with a photonic bandgap fiber.

In this work, a polarization splitter-rotator in the SOI platform is demonstrated, based on the evanescent coupling to a polysilicon waveguide. The device is compact (< 30µm), low loss (< −1.5dB) and simple to fabricate.

In this work, an overview of requirements for compact optical modules and devices is presented, focusing on optical laser sources. Regarding coherent applications, the laser must have narrow linewidth, while, at the same time, be compact and present low power consumption, targeting C-form factor pluggable (CFP) modules. Latest results obtained by our group on laser development are presented, showing that the External-Cavity Laser (ECL) can fulfill the requirements for this application.

This paper presents recent advances on high-capacity optical fiber communication for coherent and non-coherent transmission systems. We describe works carried out at CPQD on digital signal processing, forward error correction, and integrated photonic devices for long-haul, unrepeatered, and data center interconnect scenarios. Future trends and perspectives for next generation systems based on the state-of-the-art research are also discussed.

A Silicon (Si) modulator and a design methodology using a system-oriented numerical approach are proposed. The main contributions of this work are to provide a Silicon modulator as an alternative solution for intra-data center interconnect (DCI) applications and a single figure-of-merit (FOM) for the modulator design, which takes as input the main device parameters (modulation efficiency ( V π × L ), optical loss, and electro-optical bandwidth ( f 3 d B )) and provides a global optical system optimization. By using a numerical approach, the modulator physical parameters are analyzed according to system performance metrics such as the required receiver sensitivity to reach a target bit error rate (BER), and the required transmitter launch power. A capacitive Silicon device and a 4-level pulse amplitude modulation (PAM-4) system simulator is presented. The results show an efficient modulator ( V π = 3.5 V ) with high bandwidth ( f 3 d B > 38 GHz ), which is promising for data centers solutions, where power consumption is critical and high-speed is required.

We propose and demonstrate a polarization splitter and rotator (PSR) operating in the range of 1530–1590 nm, built on the SOI platform and based on a new bow tie converter TM0-to-TE1. Comparing with other compact (

We demonstrate a broadband and polarization insensitive 3 dB power splitter compatible with CMOS process. The simulation results show low insertion loss in the wavelength range from 1460 to 1640 nm for both TE and TM polarization. The fabricated device has a maximum insertion loss of 0.5 dB and 0.07 dB for TE and TM polarization, respectively, from 1520 to 1580 nm wavelength.

This paper presents a capacitive modulator design and modeling using poly-si and silicon technologies. We propose a methodology involving the entire modulator design process, from the optical design, charge distribution calculation and small-signal RF analysis. Thus, in the case of silicon photonics modulators, the paper proposes means to optimize the trade-offs among several figures of merit. It is shown that high bandwidth operation (>30 GHz) can be achieved by sacrificing a little the modulation efficiency. info:eu-repo/semantics/publishedVersion

In this paper, the design methodology and main experimental results of an External Cavity Laser (ECL) with narrow linewidth ( 16 dBm) and potential to achieve 40 nm tunability in C-band. System performance of 16-Quadrature Amplitude Modulation (QAM) transmission is better than commercial reference Integrated Tunable Laser Assembly (ITLA). The device is compact, suitable for small-form factor transceivers and modules.

We propose a fiber-chip edge coupler based on a subwavelength grating in silicon-on-insulator (SOI) platform for coupling to cleaved and high numerical aperture (HNA) optical fibers (mode field diameter of 6.3 μm). Its robustness to fabrication errors and high tolerance to fiber misalignment (±1.5 μm for a 1 dB of excess loss) make it suitable for high-volume production, being a potential candidate for data center applications. Simulation results show a 1 dB bandwidth higher than 200 nm, a polarization dependent loss lower than 0.5 dB, and minimum coupling losses of 1.47 and 1.39 dB for TE and TM modes, respectively, considering a 204 μm-long mode converter.

In this work, the most recent research and development activities to design a photonic integrated circuit for submarine optical repeaters are reported. These activities are under the scope of a Brazilian project and accomplish the photonic integrated circuit design, fabrication and packaging. The developed technology must have high-reliability in order to target submarine applications. Simulation and experimental results are also presented, to prove the concept of each component inside the integrated photonic circuit.

This chapter describes the development of passive and active components for silicon photonic integrated circuits that were performed in the CPqD. Specifically, the devices studied are polarization splitter and rotator (PSR), optical \(90^{\circ }\) hybrid, modulator, and laser. Each one is explained showing the principle of operation, modeling, and results obtained. These designed devices are compatible with standard manufacturing processes enabling monolithic integration with other devices. In addition, they can be used as building blocks for coherent transceivers and receivers in silicon photonics.

In this work, we experimentally demonstrate a single-drive push-pull Silicon Mach-Zehnder modulator with more than 48 GHz modulation bandwidth and V Π L ≈ 2.3 V.cm, compatible with standard Silicon-on-Insulator (SOI) process. The modulator also presents S 11 < −15 dB up to 50 GHz.

This paper gives an insight into a Brazilian project which aims to develop a photonic integrated circuit (PIC) and packaging for submarine optical repeaters. The PIC design in order to achieve single-mode operation in both 980nm and 1.55 $\mu$ m is detailed. A high-reliability packaging technique is demonstrated. A transmission experiment with 200Gbps 16-QAM signal is achieved using the optical amplifier with the PIC.

In this work, we present a design for a high-bandwidth (> 40 GHz) O-band Silicon Mach-Zehnder modulator using a lateral junction and compare it with an interleaved junction in terms of efficiency, loss and bandwidth.

We present the concept and design of a hybrid integrated widely tunable III-V-on-silicon ring laser with 80 nm tuning range by means of theoretical investigation. Laser spontaneous emission is provided by two gain chips, one for the C band and the other for the L band. Gain chip sections are duplexed into the silicon photonic passive cavity using a lattice filter. Wavelength tunability is proposed using the Vernier effect between two ring resonators incorporated in the silicon photonic cavity. We present numerical results of modeled laser cavity using a time-domain circuit simulator optimizing the choice of the output mirror reflectivity. The simulated performance shows a waveguide output power up to 65 mW and a high SMSR (> 45 dB) over the entire wavelength range. Linewidth calculations show feasibility for high-order modulation formats.

We present the design of a carrier depletion silicon modulator with series push-pull diode configuration and slow-wave transmission line for the 1550 nm wavelength range. The electro-optical bandwidth is 40 GHz at −2.5 V diode bias and 35 Ω termination resistance in a 3.15 mm long device. The modulation efficiency V π L π is 2.2 V.cm and optical loss is 12.8 dB/cm for the same bias. The steps in the design process are detailed and simulation results are presented.

This letter reports a cost-effective transmitter solution for future generations of long reach passive optical networks (PONs). It is based on the direct adaptive orthogonal frequency division multiplexing modulation of a hybrid III/V-on-silicon laser. Because of low-noise and good linearity of the hybrid laser, modulation formats as high as 32-quadrature amplitude modulation are achieved. Data-rates of 21.5 and 12.4 Gb/s are demonstrated, respectively, in optical back-to-back and 50 km single-mode fiber (SMF)-link free from amplifiers, while on-off keying transmission is limited to at 20 km SMF. The proposed solution stands as a cost-effective solution for next-generation time and wavelength division multiplexing PONs with extended reach, as the hybrid laser can further be made tunable.

Emerging short-reach data center interconnect (typically in the range of tens of km) is a scenario wherein the capacity has to be maximized over point-to-point optical links without intermediate optical amplification, i.e. unrepeated links. For this application, cost and compactness of the optical transceiver form factor to fit the faceplate density requirement are essential to keep up with the bandwidth demand inside hyper-scale data centers. For the optical module to fit in the current dimensions of client routers without compromising the performance, both the electronics and the optics have to be efficiently designed. As far as the opto-electronic is concerned, photonic integrated circuits (PIC) have been discussed in the community so that all the photonic functionalities are performed accordingly with the physical dimensions, power budget and performance specifications. This paper addresses the basic building blocks of silicon photonics coherent optical transceivers, from the design to experimental validation. In addition to the silicon optical modulator, basic components such as polarization splitter-rotators (PSRs) and optical filters will be addressed.

Silicon photonics has been widely researched as a potential technology for the next generation of optical devices due to its high integration capabilities. After presenting the first Brazilian high speed integrated 100G-DPQPSK transmitter, this paper brings the design and characterization of a compact integrated silicon coherent receiver, with a footprint of are 4.5 mm x 1 mm. The characterization was performed with 112 Gb/s DP-QPSK modulation resulting in an estimated BER of 5.46 x10 -7 .