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291 results on '"Goodnick, S. M."'

2. Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

Author

Knezevic, I., Ramayya, E. B., Vasileska, D., and Goodnick, S. M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Disordered Systems and Neural Networks, Condensed Matter - Materials Science
Abstract

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail., Comment: Review article, to appear in Journal of Computational and Theoretical Nanoscience

Published
2008
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3. Electron Transport in Silicon Nanowires: The Role of Acoustic Phonon Confinement and Surface Roughness Scattering

Author

Ramayya, E. B., Vasileska, D., Goodnick, S. M., and Knezevic, I.

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We investigate the effects of electron and acoustic-phonon confinement on the low-field electron mobility of thin square silicon nanowires (SiNWs) that are surrounded by SiO$_2$ and gated. We employ a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver that accounts for scattering due to acoustic phonons (confined and bulk), intervalley phonons, and the Si/SiO$_2$ surface roughness. The wires considered have cross sections between 3 $\times$ 3 nm$^2$ and 8 $\times$ 8 nm$^2$. For larger wires, as expected, the dependence of the mobility on the transverse field from the gate is pronounced. At low transverse fields, where phonon scattering dominates, scattering from confined acoustic phonons results in about a 10% decrease of the mobility with respect to the bulk phonon approximation. As the wire cross-section decreases, the electron mobility drops because the detrimental increase in both electron--acoustic phonon and electron--surface roughness scattering rates overshadows the beneficial volume inversion and subband modulation. For wires thinner than 5 $\times$ 5 nm$^2$, surface roughness scattering dominates regardless of the transverse field applied and leads to a monotonic decrease of the electron mobility with decreasing SiNWs cross section., Comment: 13 pages, 9 figures, Revtex

Published
2008
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4. Electron mobility in silicon nanowires

Author

Ramayya, E. B., Vasileska, D., Goodnick, S. M., and Knezevic, I.

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The low-field electron mobility in rectangular silicon nanowire (SiNW) transistors was computed using a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver. The behavior of the phonon-limited and surface-roughness-limited components of the mobility was investigated by decreasing the wire width from 30 nm to 8 nm, the width range capturing a crossover between two-dimensional (2D) and one-dimensional (1D) electron transport. The phonon-limited mobility, which characterizes transport at low and moderate transverse fields, is found to decrease with decreasing wire width due to an increase in the electron-phonon wavefunction overlap. In contrast, the mobility at very high transverse fields, which is limited by surface roughness scattering, increases with decreasing wire width due to volume inversion. The importance of acoustic phonon confinement is also discussed briefly.

Published
2008
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5. Challenges, myths, and opportunities in hot carrier solar cells.

Author

Ferry, D. K., Goodnick, S. M., Whiteside, V. R., and Sellers, I. R.

Subjects
*HOT carriers, *SOLAR cells, *GOAL (Psychology), *MYTH, *SILICON solar cells
Abstract

Hot carrier solar cells hold the promise of efficiency significantly greater than that predicted by the Shockley–Queisser limit. Consequently, there has been considerable effort to create cells that achieve this goal, but so far, this has not been realized. There are many reasons for this. Here, the principles of the concept will be discussed along with some myths that hinder the future development of such devices. Also, a new approach to the hot carrier solar cell is described along with some recent experimental results that support such an approach. [ABSTRACT FROM AUTHOR]

Published
2020
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6. Is Self-Heating Important in Nanowire FETs?

Author

Vasileska, D., Hossain, A., Raleva, K., Goodnick, S. M., Hutchison, David, Series editor, Kanade, Takeo, Series editor, Kittler, Josef, Series editor, Kleinberg, Jon M., Series editor, Mattern, Friedemann, Series editor, Mitchell, John C., Series editor, Naor, Moni, Series editor, Nierstrasz, Oscar, Series editor, Pandu Rangan, C., Series editor, Steffen, Bernhard, Series editor, Sudan, Madhu, Series editor, Terzopoulos, Demetri, Series editor, Tygar, Doug, Series editor, Vardi, Moshe Y., Series editor, Weikum, Gerhard, Series editor, Dimov, Ivan, editor, Dimova, Stefka, editor, and Kolkovska, Natalia, editor

Published
2011
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7. Modeling Thermal Effects in Fully-Depleted SOI Devices with Arbitrary Crystallographic Orientation

Author

Raleva, K., Vasileska, D., Goodnick, S. M., Hutchison, David, Series editor, Kanade, Takeo, Series editor, Kittler, Josef, Series editor, Kleinberg, Jon M., Series editor, Mattern, Friedemann, Series editor, Mitchell, John C., Series editor, Naor, Moni, Series editor, Nierstrasz, Oscar, Series editor, Pandu Rangan, C., Series editor, Steffen, Bernhard, Series editor, Sudan, Madhu, Series editor, Terzopoulos, Demetri, Series editor, Tygar, Doug, Series editor, Vardi, Moshe Y., Series editor, Weikum, Gerhard, Series editor, Dimov, Ivan, editor, Dimova, Stefka, editor, and Kolkovska, Natalia, editor

Published
2011
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8. Thermal Modeling of GaN HEMTs

Author

Vasileska, D., Ashok, A., Hartin, O., Goodnick, S. M., Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Doug, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Lirkov, Ivan, editor, Margenov, Svetozar, editor, and Waśniewski, Jerzy, editor

Published
2010
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9. The Role of the Boundary Conditions on the Current Degradation in FD-SOI Devices

Author

Raleva, K., Vasileska, D., Goodnick, S. M., Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Doug, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Lirkov, Ivan, editor, Margenov, Svetozar, editor, and Waśniewski, Jerzy, editor

Published
2010
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10. Calculation of optical response functions of dilute-N GaPAsN lattice-matched to Si.

Author

Zou, Y. and Goodnick, S. M.

Subjects
*ELECTRIC dipole transitions, *VALENCE bands, *BRILLOUIN zones, *DIELECTRIC function, *CONDUCTION bands, *ELECTRONIC structure
Abstract

Dilute-N GaPAsN alloys have great potential for optoelectronics lattice-matched to Si. However, there is a lack of systematic calculation of the optical response of these alloys. The present paper uses the s p 3 d 5 s ∗ s N tight-binding model to calculate the fullband electronic structure of dilute-N GaPAsN and then calculate the optical response functions considering direct transitions within the electric dipole approximation. Good agreement is obtained for the dielectric function in comparison to available optical data for dilute nitrides. To achieve this, the s p 3 d 5 s ∗ parameters for GaP and GaAs are optimized for their optical properties in comparison to published data, which are then used as the basis for the s p 3 d 5 s ∗ s N parameters for dilute-N GaPN and GaAsN. The calculated absorption between the valence band and the newly formed lowest conduction band of the dilute nitrides increases as the N fraction increases, in agreement with experiments, mainly due to the net increase in their coupling in the entire Brillouin zone, supported by the calculated momentum matrix element in the present work. [ABSTRACT FROM AUTHOR]

Published
2020
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11. Monte Carlo Simulation of GaN Diode Including Intercarrier Interactions

Author

Ashok, A., Vasileska, D., Hartin, O., Goodnick, S. M., Hutchison, David, Series editor, Kanade, Takeo, Series editor, Kittler, Josef, Series editor, Kleinberg, Jon M., Series editor, Mattern, Friedemann, Series editor, Mitchell, John C., Series editor, Naor, Moni, Series editor, Nierstrasz, Oscar, Series editor, Pandu Rangan, C., Series editor, Steffen, Bernhard, Series editor, Sudan, Madhu, Series editor, Terzopoulos, Demetri, Series editor, Tygar, Doug, Series editor, Vardi, Moshe Y., Series editor, Weikum, Gerhard, Series editor, Lirkov, Ivan, editor, Margenov, Svetozar, editor, and Waśniewski, Jerzy, editor

Published
2008
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13. Introduction

Author

Raleva, K, primary, Shaik, A R, primary, Vasileska, D, primary, and Goodnick, S M, primary

Published
2017
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15. Summary

Author

Raleva, K, primary, Shaik, A R, primary, Vasileska, D, primary, and Goodnick, S M, primary

Published
2017
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26. Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors

Author

Marino, F. A., Faralli, N., Palacios, T., Ferry, D. K., Goodnick, S. M., and Saraniti, M.

Subjects
Aluminum -- Electric properties, Aluminum -- Optical properties, Gallium compounds -- Electric properties, Gallium compounds -- Optical properties, High-electron-mobility transistors -- Design and construction, High-electron-mobility transistors -- Composition, Monte Carlo method -- Usage, Multithreading -- Analysis, Business, Electronics, Electronics and electrical industries
Published
2010

28. Ballistic transport in InP-based HEMTs

Author

Akis, R., Faralli, N., Ferry, D. K., Goodnick, S. M., Phatak, K. A., and Saraniti, M.

Subjects
Gallium arsenide -- Electric properties, Gates (Electronics) -- Analysis, High-electron-mobility transistors -- Design and construction, Indium -- Electric properties, Business, Electronics, Electronics and electrical industries
Published
2009

47. Linear and nonlinear conductance of ballistic quantum wires with hybrid confinement.

Author

Kothari, H., Ramamoorthy, A., Akis, R., Goodnick, S. M., Ferry, D. K., Reno, J. L., and Bird, J. P.

Subjects
ELECTRON transport, ONE-dimensional conductors, NANOWIRES, ETCHING, BALLISTICS
Abstract

We characterize the linear and nonlinear electron transport in quantum point contacts (QPCs) realized by a hybrid combination of etching and gating. We demonstrate that the strong electron confinement generated through this hybrid QPC process results in quantized subbands with a large energy separation, leading to the observation of robust one-dimensional quantum-transport effects. Measurements of the nonlinear differential conductance reveal an unexpected bunching of curves at 0.20-0.25×2e2/h, rather than at the expected value of 0.5×2e2/h. Application of a simple analytical model indicates that this bunching is associated with the highly asymmetric manner in which the source-drain voltage is dropped across the QPC near pinch-off and under nonequilibrium conditions. [ABSTRACT FROM AUTHOR]

Published
2008
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