27 results on '"Grampeix, Helen"'
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2. Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP.
3. Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories
4. Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories
5. Epitaxial Growth of Ge Thick Layers on Nominal and 6oC off Si(001); Ge Surface Passivation by Si
6. Realization of Hybrid Silicon core/silicon Nitride Shell Nanodots by LPCVD for NVM Application
7. Shallow Heavily Doped n\mathplus\mathplus Germanium by Organo-Antimony Monolayer Doping
8. Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP
9. Nano-characterization of switching mechanism in HfO2-based oxide resistive memories by TEM-EELS-EDS
10. Reference-free, Depth-dependent Characterization Of Nanoscaled Materials Using A Combined Grazing Incidence X-ray Fluorescence And X-ray Reflectometry Approach
11. Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges
12. 300 mm InGaAs-on-insulator substrates fabricated using direct wafer bonding and the Smart Cut™ technology
13. On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying
14. HfO2/Al2O3/InGaAs MOSCAP Structures and InGaAs Plasma Nitridation Elaborated in a 300mm Pilot Line
15. Reference-free, depth-dependent characterization of nanolayers and gradient systems with advanced grazing incidence X-ray fluorescence analysis
16. Thin film analysis by low-energy ion scattering by use of TRBS simulations
17. Detailed Analysis of the Role of Thin-${\rm HfO}_{2}$ Interfacial Layer in ${\rm Ge}_{2}{\rm Sb}_{2}{\rm Te}_{5}$-Based PCM
18. Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 conductive-bridging-RAMs and HfO2 Oxide-RAMs
19. Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs
20. Enabling 3D Monolithic Integration
21. Realization of Hybrid Silicon core/silicon Nitride Shell Nanodots by LPCVD for NVM Application
22. Realization of Hybrid Silicon core/silicon Nitride Shell Nanodots by LPCVD for NVM Application.
23. Detailed Analysis of the Role of Thin-HfO2 Interfacial Layer in Ge2Sb2Te5-Based PCM.
24. Epitaxial Growth of Ge Thick Layers on Nominal and 6oC off Si(001); Ge Surface Passivation by Si
25. Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories
26. GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current.
27. Shallow Heavily Doped n++ Germanium by Organo-Antimony Monolayer Doping.
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