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Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications. [ABSTRACT FROM AUTHOR]

We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 1011 W cm-2 which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams. [ABSTRACT FROM AUTHOR]

All‐dielectric nanophotonic devices are usually fabricated by engraving arrays of nanoholes at the surface of high‐index materials, to engineer dedicated optical functions. However, their direct 3D integration in the volume of a material is challenging, inaccessible to current planar nanolithography methods. Here is introduced an ultrafast laser‐machining method that opens the possibility to realize scalable arrays of hollow nanochannels directly inside the bulk of silica glass within a single‐step, maskless, and digital approach. Using a custom‐shaped micro‐Bessel beam and by tuning laser pulse durations from femtoseconds to picosecond to boost processing versatility, dense assemblies of nanochannels with adjustable lengths (up to 30 µm), and submicron lattice periodicity (down to 0.7 µm) are achieved. As a proof‐of‐principle demonstration, a gradient‐index metaphotonic structure is realized and its performance is experimentally characterized, demonstrating its relevancy for imprinting phase functions with magnitude up to π/2$\pi /2$ in the short‐wave infrared spectral range. Results show that the unique flexibility and scalability provided by individual control of each channel opens a new realistic alternative approach for 3D fabrication of monolithic integrated nanophotonic devices inside a wide range of low‐index standard optical materials. [ABSTRACT FROM AUTHOR]

Highlights • A laser-induced forward transfer (LIFT) strategy combining quasi-continuous (QCW) and femtosecond (fs) lasers is successfully applied for high resolution printing from a 1 µm copper donor film. • Influences of copper film temperature, and especially diameter of the melted metal area, on the printing dynamics are revealed. • By simply adjusting the synchronization between the QCW and fs pulses, droplets with different shapes are printed. The reproducibility is demonstrated by printing two-dimensional arrays. • Double-pulse LIFT prints debris-free microstructures with controllable dimensions. Abstract Laser induced forward transfer process can be implemented in a double-pulse scheme where a solid thin film deposited on a transparent donor substrate is irradiated by two synchronized lasers. In a recently demonstrated methodology, a long pulse is first applied to melt the film and an appropriately delayed ultrashort laser pulse initiates material transfer in the liquid phase toward a receiver substrate. This provides a versatile method to print high-resolution (<2 µm) patterns with a long working distance (>40 µm). In this paper we focus on the study of the dynamical aspects associated with these printing performances. The temperature evolution of the thin copper film during irradiation with a quasi-continuous wave (QCW) pulse is calculated. By combining the calculations with time-resolved imaging experiments, we reveal the influence of the copper film temperature and molten metal diameter on the ejection dynamics. Characterization of the transferred materials shows that the delay between the two laser pulses is a control parameter for the shape and volume of the printed structures. This is finally exploited to demonstrate high-precision printing of different debris-free microstructures onto a Si receiver substrate set as far as 60 µm away from the donor film. [ABSTRACT FROM AUTHOR]

We show that the plasma produced by laser ablation of solid materials in specific conditions has an emission spectrum that is characterized by the saturation of the most intense spectral lines at the blackbody radiance. The blackbody temperature equals the excitation temperature of atoms and ions, proving directly and unambiguously a plasma in local thermodynamic equilibrium. The present investigations take benefit from the very rich and intense emission spectrum generated by ablation of a nickel-chromium-molybdenum alloy. This alternative and direct proof of the plasma equilibrium state re-opens the perspectives of quantitative material analyses via calibration-free laser-induced breakdown spectroscopy. Moreover, the unique properties of this laser-produced plasma promote its use as radiation standard for intensity calibration of spectroscopic instruments. [ABSTRACT FROM AUTHOR]

Driven by flexibility, precision, repeatability and eco-friendliness, laser-based technologies have attracted great interest to engineer or to analyze materials in various fields including energy, environment, biology and medicine. A major advantage of laser processing relies on the ability to directly structure matter at different scales and to prepare novel materials with unique physical and chemical properties. It is also a contact-free approach that makes it possible to work in inert or reactive liquid or gaseous environment. This leads today to a unique opportunity for designing, fabricating and even analyzing novel complex bio-systems. To illustrate this potential, in this paper, we gather our recent research on four types of laser-based methods relevant for nano-/micro-scale applications. First, we present and discuss pulsed laser ablation in liquid, exploited today for synthetizing ultraclean "bare" nanoparticles attractive for medicine and tissue engineering applications. Second, we discuss robust methods for rapid surface and bulk machining (subtractive manufacturing) at different scales by laser ablation. Among them, the microsphere-assisted laser surface engineering is detailed for its appropriateness to design structured substrates with hierarchically periodic patterns at nano-/micro-scale without chemical treatments. Third, we address the laser-induced forward transfer, a technology based on direct laser printing, to transfer and assemble a multitude of materials (additive structuring), including biological moiety without alteration of functionality. Finally, the fourth method is about chemical analysis: we present the potential of laser-induced breakdown spectroscopy, providing a unique tool for contact-free and space-resolved elemental analysis of organic materials. Overall, we present and discuss the prospect and complementarity of emerging reliable laser technologies, to address challenges in materials' preparation relevant for the development of innovative multi-scale and multi-material platforms for bio-applications. [ABSTRACT FROM AUTHOR]

Laboratory plasmas inherently exhibit temperature and density gradients leading to complex investigations. We show that plasmas generated by laser ablation can constitute a robust exception to this. Supported by emission features not observed with other sources, we achieve plasmas of various compositions which are both uniform and in local thermodynamic equilibrium. These properties characterize an ideal radiation source opening multiple perspectives in plasma spectroscopy. The finding also constitutes a breakthrough in the analytical field as fast analyses of complex materials become possible. [ABSTRACT FROM AUTHOR]

We present an experimental study of double-pulse laser-induced forward transfer (LIFT) and jet formation from different metal donor films. The dynamics of the jet formation and propagation have been investigated by time-resolved shadowgraphy studies. The morphologies of the irradiated films have been studied by means of scanning electron microscopy analysis. The experiments have been performed with copper, gold and nickel-copper double-layer films and the results point out the ability of double-pulse LIFT method to form long liquid metal jets and to print micro-droplets with a limited dependence on the metal properties. [ABSTRACT FROM AUTHOR]

There are natural limits to the spatial resolution and the deposited energy densities that can be achieved in femtosecond laser dielectric modification. These arise because of the threshold-like nature of nonlinear absorption. We use two-pulse experiments to show that both limits can be exceeded by taking advantage of absorption seeded by free electrons or self-trapped excitons, depending on the pulse separation. [ABSTRACT FROM AUTHOR]

Laser micro‐welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon (Si) and other technology‐essential semiconductors. Concentrating on circumventing the optical limits on the deliverable energy density at interfaces between narrow‐gap materials with intense infrared light, the first feasibility demonstration of transmission laser welding between Si workpieces using nanosecond laser pulses is made. A shear joining strength of 32 ± 10 MPa which compares very favorably to the complex process alternatives is obtained. Supported by experiments repeated on different material combinations including gallium arsenide, it is confirmed that this remarkable performance level is achievable for similar and dissimilar semiconductors. The demonstrations rely on a small footprint fiber laser, an aspect that holds great promises for the advent of a high‐efficiency flexible process beneficial for important technology developments including lab‐on‐a‐chip and hybrid semiconductor systems. [ABSTRACT FROM AUTHOR]

Direct laser writing of amorphous lines in crystalline silicon has the potential for becoming a flexible alternative to silicon‐on‐insulator technology for photonic integrated circuits. Yet, the maximum amorphous layer thickness achieved is 60 nm, which is below the requirements for waveguiding at telecom wavelengths. Here, the authors report on different strategies to push the layer thickness beyond today's limit. To this end, irradiation with femtosecond laser pulses covering an extremely broad wavelength range (515 nm–4 µm) up to the yet unexplored near‐ and mid‐infrared region of silicon transparency is investigated. The results show that much thicker amorphous layers can be obtained upon multipulse irradiation at 3‐µm wavelength. The deepest amorphization is achieved in silicon wafers covered with a thick silicon dioxide layer that strongly assists the heat extraction, yielding steep index profiles with a maximum amorphous layer thickness of 128 nm. This superior thickness is compatible with single mode waveguiding for a symmetric waveguide configuration. This study also contributes to a better understanding of the mechanisms involved in laser‐induced amorphization. [ABSTRACT FROM AUTHOR]

Carrier kinetics in the density range of N = 1017 - 1020 cm-3 is investigated inside the bulk of crystalline silicon. Most conventional experimental techniques used to study carrier mobility are indirect and lack sensitivity because of charging effects and recombination on the surface. An all optical technique is used to overcome these obstacles. By focusing 1.3-µm femtosecond laser pulses in the volume, we inject an initial free-carrier population by two-photon absorption. Then, we use pump-and-probe infrared microscopy as a tool to obtain simultaneous measurements of the carrier diffusion and recombination dynamics in a microscale region deep inside the material. The rate equation model is used to simulate our experimental results. We report a constant ambipolar diffusion coefficient Da of 2:5 cm² s-1 and an effective carrier lifetime τeff of 2:5 ns at room temperature. A discussion on our findings at these high-injection levels is presented. [ABSTRACT FROM AUTHOR]

Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 101 2W/cm2 . The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ffi1019cm~3, which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the --100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses. [ABSTRACT FROM AUTHOR]

The behaviour of semiconductor materials and devices subjected to femtosecond laser irradiation has been under scrutiny, for many reasons, during the last decade. In particular, recent works have shown that the specific functionality and/or geometry of semiconductor devices, among which non-volatile memory (NVM) devices hold a special place, could be used to improve the knowledge about ultrafast laser-semiconductor interactions. So far, such an approach has been applied to draw conclusions about the spatio-temporal properties of laser propagation in bulk materials. Here, by comparing the evolution of the electrical characteristics of Flash cells under the cumulative effect of repeated femtosecond laser pulses with first-order physical considerations and TCAD (Technology Computer Aided Design) simulations, we clearly establish the role of the carriers created by nonlinear ionization on the functionality of the structures. The complete electrical analysis informs indirectly on the energy of the laser-produced free-carriers which, to date, was almost inaccessible by an experimental method applicable to the bulk of a material. Establishing the link between the carrier energy and laser parameters is of major importance to improve the comprehension of the nonlinear ionization mechanisms associated to intense laser-semiconductor interactions and applied in various fields from microelectronics to laser micromachining. [ABSTRACT FROM AUTHOR]