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Your search keyword '"Guan, Z. F."' showing total 20 results
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20 results on '"Guan, Z. F."'

3. Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors.

Author

Deng, F., Liu, Q. Z., Yu, L. S., Guan, Z. F., Lau, S. S., Redwing, J. M., Geisz, J., and Kuech, T. F.

Subjects
STRAINS & stresses (Mechanics), BAND gaps, QUANTUM wells, GALLIUM arsenide
Abstract

Deals with a study which investigated the effect of strain-induced band-gap modulation in a GaAs/AlGaAs multiple-quantum-well structure with the wells located at various depths in the structure. Background to the study; Experimental procedures; Results and discussion.

Published
1996
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4. Photoelastic waveguides and the controlled introduction of strain in III-V semiconductors by means of thin film technology.

Author

Liu, Q. Z., Deng, F., Yu, L. S., Guan, Z. F., Pappert, S. A., Yu, P. K. L., Lau, S. S., Redwing, J. M., and Kuech, T. F.

Subjects
THIN films, SEMICONDUCTORS, STRAINS & stresses (Mechanics), PHOTOELASTICITY, WAVEGUIDES
Abstract

Deals with a study that investigated the use of thin film technology to introduce controllable and thermally stable stress into semiconductor heterostructures. Reason for the reproducibility and controllability of the induced stress in the structure; Dependence of the stability of the stress; Interrelationship between the photoelastic waveguide characteristics and the stress.

Published
1995
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5. Planar 1.3 and 1.55 μm InGaAs(P)/InP electroabsorption waveguide modulators using oxygen ion mixing and the photoelastic effect.

Author

Pappert, S. A., Xia, W., Jiang, X. S., Guan, Z. F., Zhu, B., Liu, Q. Z., Yu, L. S., Clawson, A. R., Yu, P. K. L., and Lau, S. S.

Subjects
ION bombardment, ELECTRONIC modulators, WAVEGUIDES, INDIUM phosphide
Abstract

Focuses on a study which described the use of elevated temperature implantation to simultaneously achieve compositional disordering and electrical isolation and form guided-wave modulators using oxygen ion beam mixing. Insight on indium phosphide (InP)-based ion-beam mixing devices; Description of results on elevated temperature oxygen ion beam mixing in InP-based superlattices; Discussion on the photoelastic effect in InP-based structures.

Published
1994
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6. Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures.

Author

Pappert, S. A., Xia, W., Zhu, B., Clawson, A. R., Guan, Z. F., Yu, P. K. L., and Lau, S. S.

Subjects
ELECTRIC currents, OXYGEN, SUPERLATTICES
Abstract

Studies the simultaneous compositional disordering and the formation of electrical resistive layers induced by oxygen implantation in indium gallium arsenide/indium phosphide superlattices. Details on the experiment; Results of the study; Conclusion.

Published
1992
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8. Transfer of patterned ion-cut silicon layers

Author

Yun, C. H., primary, Wengrow, A. B., additional, Cheung, N. W., additional, Zheng, Y., additional, Welty, R. J., additional, Guan, Z. F., additional, Smith, K. V., additional, Asbeck, P. M., additional, Yu, E. T., additional, and Lau, S. S., additional

Published
1998
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12. Photoelastic AlGaAs/GaAs waveguide polarizer

Author

Yu, L. S., primary, Guan, Z. F., additional, Liu, Q. Z., additional, Deng, F., additional, Pappert, S. A., additional, Yu, P. K. L., additional, Lau, S. S., additional, Florez, L. T., additional, and Harbison, J. P., additional

Published
1993
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13. Photoelastic waveguides formed by interfacial reactions

Author

Yu, L. S., primary, Guan, Z. F., additional, Xia, W., additional, Liu, Q. Z., additional, Deng, F., additional, Pappert, S. A., additional, Yu, P. K. L., additional, Lau, S. S., additional, Florez, L. T., additional, and Harbison, J. P., additional

Published
1993
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