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The use of radio-frequency photoreflecrance technique, which senses the changes in sample conductivity as carriers recombine following excitation by a laser pulse is detailed. The Auger and radiative recombination coefficients obtained from high-level injection decay times in low doping concentration samples showing very good agreement with the values obtained from low-level injection conditions.

0.53 eV p-type InGaAsSb double heterostructures were studied to determine photon recycling and recombination processes.

The extent of relative tilt angle, crystalline quality and relaxation of Ga(sub x)In(sub 1-x)Sb layers grown on (001) GaSb substrates by organometallic vapor phase epitaxy were studied through double-crystal x-ray diffraction and transmission electron microscopy. An unexpectedly large tilt was produced between Ga0.8In0.2Sb epitaxial layers and oriented (001) GaSb substrates which has not been previously reported. Correlation between the tilt formation and the relaxation indicates that the lattice relaxation is affected by the tilt between the epilayer and the substrate.

Research was conducted to examine InGaAsSb thermophotovoltaic diode. Diode performance was associated with electro-optical characteristics such as minority carrier lifetime, mobility and diffusion length while initial links to microstructural properties were provided. Results suggest that bulk defects in 0.53 eV InGaAsSb do not restrict the minority carrier lifetime. It was also proven that the InGaAsSb material system has high performance potential.

A microwave photoconductivity decay (MPCD) method is used for characterizing recombination lifetime in high-purity 4H-SiC substrates produced with three different anneal processes. The analysis has shown a trapping center closer to the conduction band results in a longer MPCD decay transient.

The thermal anneal process has increased the minority carrier lifetime in SiC substrates to in excess of 3 [mu]s when compared to the starting as-grown substrates with lifetimes typically in the

Modern state-of-the-art polymer adhesive wafer bonding technologies, materials and applications are reviewed. After investigations it is found that as an easy, strong and cheap bonding process, adhesive wafer bonding can be used for many application, like wafer-level three-dimensional integrated circuit, wafer-level packaging and several microsystems that can be integrated with CMOS integrated circuits.