1. Molybdenum disulfide homogeneous junction diode fabrication and rectification characteristics.
- Author
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Li, Wei, Ke, Jeng-Yu, Ou-Yang, Yun-Xuan, Lin, Ying-Xuan, Ho, Ching-Hwa, Lee, Kuei-Yi, Fujii, Shunjiro, Honda, Shin-ichi, Okado, Hideaki, and Naitoh, Masamichi
- Abstract
The chemical vapor transport method was used in this research to synthesize MoS
2 bulk. Through mechanical exfoliation, we limited the thickness of MoS2 flakes from 1 to 3 ÎĽ m. In order to fabricate a pâ€"n homogeneous junction, we used oxygen plasma treatment to transform the MoS2 characteristics from n-type to p-type to fabricate a pâ€"n homogenous junction and demonstrate the charge neutrality point shift from â'80 to +102 V successfully using FET measurement. The MoS2 pâ€"n homogeneous junction diode showed an excellent p-n characteristic curve during the measurements and performed great rectifying behavior with 1â€"10 Vpp in the half-wave rectification experiment. This work demonstrated that MoS2 flake had great potential for p-n diodes that feature significant pâ€"n characteristics and rectifying behavior. [ABSTRACT FROM AUTHOR]- Published
- 2022
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