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Nanostructuring has been an effective method to improve the charge separation of semiconductors with poor charge transport properties. FeVO4is a promising photoanode with a band gap of ∼2.1 eV, theoretical photocurrent of 13 mA cm-1, and solar-to-hydrogen efficiency of up to 16%. However, its photoelectrochemical (PEC) activity is limited by the low charge transport properties. In this report, a two-step synthesis method is found to control the growth of FeVO4photoanodes to become a nanorod or film. Nanostructured FeVO4is demonstrated to achieve higher photocurrent density due to the higher charge separation efficiency and enlarged absorption range. In addition, the band gap of FeVO4nanorods has decreased by 0.16 eV, which is attributed to the formation of vanadium vacancy, as supported by calculation results. This work demonstrates that nanostructuring and vacancy incorporation synergistically improve the PEC performance of FeVO4-based photoanodes. Ministry of Education (MOE) This work was supported by the Singapore Ministry of Education (MOE) Tier 2 grant (MOE2016T21030) and Tier 1 grant [2020-T1-001-147 (RG64/20)].

Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe2O3 (haematite) – now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe2O3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe2O3.

The quantum eraser is a variation of the celebrated Young's interference experiment that can be used to demonstrate the elusive complementarity principle in quantum physics. Here we show the construction of its classical analogue for deployment in classrooms in a simple, cost-effective yet robust manner by employing a laser pointer, double-slits, and polarizers., 4 pages, 3 figures, 4 supplementary information pages

Smartphones are widely available and used extensively by students worldwide. These phones often come equipped with high-quality cameras that can be combined with basic optical elements to build a cost-effective DIY spectrometer. Here, we discuss a series of demonstrations and pedagogical exercises, accompanied by our DIY diffractive spectrometer that uses a free web platform for instant spectral analysis. Specifically, these demonstrations can be used to encourage hands-on and inquiry-based learning of wave optics, broadband vs discrete light emission, quantization, Heisenberg's energy-time uncertainty relation, and the use of spectroscopy in day-to-day life. Hence, these simple tools can be readily deployed in high school classrooms to communicate the practices of science., 7 pages, 7 figures

Topologically protected whirling magnetic textures could emerge as data carriers in next-generation post-Moore computing. Such textures are abundantly observed in ferromagnets (FMs); however, their antiferromagnetic (AFM) counterparts are expected to be even more relevant for device applications, as they promise ultra-fast, deflection-free dynamics whilst being robust against external fields. Unfortunately, they have remained elusive, hence identifying materials hosting such textures is key to developing this technology. Here, we present comprehensive micromagnetic and analytical models investigating topological textures in the broad material class of A-type antiferromagnets, specifically focusing on the prototypical case of $\alpha \text{-Fe}_2 \text{O}_3$,an emerging candidate for AFM spintronics. By exploiting a symmetry breaking interfacial Dzyaloshinskii-Moriya interaction (iDMI), it is possible to stabilize a wide topological family, including AFM (anti)merons and bimerons and the hitherto undiscovered AFM skyrmions. Whilst iDMI enforces homochirality and improves the stability of these textures, the widely tunable anisotropy and exchange interactions enable unprecedented control of their core dimensions. We then present a unifying framework to model the scaling of texture sizes based on a simple dimensional analysis. As the parameters required to host and tune homochiral AFM textures may be obtained by rational materials design of $\alpha \text{-Fe}_2 \text{O}_3$, it could emerge as a promising platform to initiate AFM topological spintronics., Comment: 17 pages, 9 figures. Submitted to Physical Review X

While chiral magnets, metal-based magnetic multilayers, or Heusler compounds have been considered as the material workhorses in the field of skyrmionics, oxides are now emerging as promising alternatives, as they host special correlations between the spin-orbital-charge-lattice degrees of freedom and/or coupled ferroic order parameters. These interactions open new possibilities for practically exploiting skyrmionics. In this article, we review the recent advances in the observation and control of topological spin textures in various oxide systems. We start with the discovery of skyrmions and related quasiparticles in bulk and heterostructure ferromagnetic oxides. Next, we emphasize the shortcomings of implementing ferromagnetic textures, which have led to the recent explorations of ferrimagnetic and antiferromagnetic oxide counterparts, with higher Curie temperatures, stray-field immunity, low Gilbert damping, ultrafast magnetic dynamics, and/or absence of skyrmion deflection. Then, we highlight the development of novel pathways to control the stability, motion, and detection of topological textures using electric fields and currents. Finally, we present the outstanding challenges that need to be overcome to achieve all-electrical, nonvolatile, low-power oxide skyrmionic devices., Authors Zhi Shiuh Lim and Hariom Jani have contributed equally; 22 Pages, 4 Figures; Keywords: Spintronics, Topology, Oxides, Ferrimagnets, Antiferromagnets, Skyrmions, Beyond-Moore Computing

Phase change materials provide unique reconfigurable properties for photonic applications that mainly arise from their exotic characteristic to reversibly switch between the amorphous and crystalline nonvolatile phases. Optical pulse based reversible switching of nonvolatile phases is exploited in various nanophotonic devices. However, large area reversible switching is extremely challenging and has hindered its translation into a technologically significant terahertz spectral domain. Here, this limitation is circumvented by exploiting the semiconducting nature of germanium antimony telluride (GST) to achieve dynamic terahertz control at picosecond timescales. It is also shown that the ultrafast response can be actively altered by changing the crystallographic phase of GST. The ease of fabrication of phase change materials allows for the realization of a variable ultrafast terahertz modulator on a flexible platform. The rich properties of phase change materials combined with the diverse functionalities of metamaterials and all-optical ultrafast control enables an ideal platform for design of efficient terahertz communication devices, terahertz neuromorphic photonics, and smart sensor systems. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) The authors acknowledge research funding support from the Ministry of Education, Singapore (AcRF Tier 1, Grant RG191/17, MOE2017-T2-1-110, MOE2019-T2-1-058, and MOE2016-T3-1-006(S)), Advanced Manufacturing and Engineering (AME) Programmatic grant (A18A5b0056) from Agency for Science, Technology and Research (A*STAR) and NRF CRP on Oxide Electronics on silicon Beyond Moore (NRF-CRP15-2015-01).

In the quest for post-CMOS technologies, ferromagnetic skyrmions and their anti-particles have shown great promise as topologically protected solitonic information carriers in memory-in-logic or neuromorphic devices. However, the presence of dipolar fields in ferromagnets, restricting the formation of ultra-small topological textures, and the deleterious skyrmion Hall effect when driven by spin torques have thus far inhibited their practical implementations. Antiferromagnetic analogues, which are predicted to demonstrate relativistic dynamics, fast deflection-free motion and size scaling have recently come into intense focus, but their experimental realizations in natural antiferromagnetic systems are yet to emerge. Here, we demonstrate a family of topological antiferromagnetic spin-textures in $\alpha$-Fe$_2$O$_3$ - an earth-abundant oxide insulator - capped with a Pt over-layer. By exploiting a first-order analogue of the Kibble-Zurek mechanism, we stabilize exotic merons-antimerons (half-skyrmions), and bimerons, which can be erased by magnetic fields and re-generated by temperature cycling. These structures have characteristic sizes of the order ~100 nm that can be chemically controlled via precise tuning of the exchange and anisotropy, with pathways to further scaling. Driven by current-based spin torques from the heavy-metal over-layer, some of these AFM textures could emerge as prime candidates for low-energy antiferromagnetic spintronics at room temperature., Comment: 18 pages, 4 figures

Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe2O3 (haematite) – now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe2O3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe2O3., One major challenge for antiferromagnetic spintronics is how to control the antiferromagnetic state. Here Jani et al. demonstrate the reversible ionic control of the room-temperature magnetic anisotropy and spin reorientation transition in haematite, via the incorporation and removal of hydrogen.

Infinite-layer Nd_{1-x}Sr_{x}NiO_{2} thin films with Sr doping level x from 0.08 to 0.3 are synthesized and investigated. We find a superconducting dome x between 0.12 and 0.235 accompanied by a weakly insulating behavior in both under- and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x≥0.18, the normal state Hall coefficient (R_{H}) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes decreases monotonically with decreasing x from the overdoped side and approaches the superconducting dome at the midpoint, suggesting a reconstruction of the Fermi surface with the dopant concentration across the dome.

Tailoring spin-orbit interactions and Coulomb repulsion are the key features to observe exotic physical phenomena such as magnetic anisotropy and topological spin texture at oxide interfaces. Our study proposes a novel platform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3 (3d-5d oxide) interfaces by tuning the LaMnO3 growth conditions which controls the lattice displacement and spin-correlated interfacial coupling through charge transfer. We report on a tunable and enhanced interface-induced Rashba spin-orbit coupling and Elliot-Yafet spin relaxation mechanism in LaMnO3/SrIrO3 bilayer with change in the underlying magnetic order of LaMnO3. We also observed enhanced spin-orbit coupling strength in LaMnO3/SrIrO3 compared to previously reported SrIrO3 layers. The X-Ray spectroscopy measurement reveals the quantitative valence of Mn and their impact on charge transfer. Further, we performed angle-dependent magnetoresistance measurements, which show signatures of magnetic proximity effect in SrIrO3 while reflecting the magnetic order of LaMnO3. Our work thus demonstrates a new route to engineer the interface induced Rashba spin-orbit coupling and magnetic proximity effect in 3d-5d oxide interfaces which makes SrIrO3 an ideal candidate for spintronics applications., Comment: 10 Pages, 4 Figures

The strikingly contrasting optical properties of various phases of chalcogenide phase change materials (PCM) has recently led to the development of novel photonic devices such as all-optical non-von Neumann memory, nanopixel displays, color rendering, and reconfigurable nanoplasmonics. However, the exploration of chalcogenide photonics is currently limited to optical and infrared frequencies. Here, a phase change material integrated terahertz metamaterial for multilevel nonvolatile resonance switching with spatial and temporal selectivity is demonstrated. By controlling the crystalline proportion of the PCM film, multilevel, non-volatile, terahertz resonance switching states with long retention time at zero hold power are realized. Spatially selective reconfiguration at sub-metamaterial scale is shown by delivering electrical stimulus locally through designer interconnect architecture. The PCM metamaterial also features ultrafast optical modulation of terahertz resonances with tunable switching speed based on the crystalline order of the PCM film. The multilevel nonvolatile, spatially selective, and temporally tunable PCM metamaterial will provide a pathway toward development of novel and disruptive terahertz technologies including spatio-temporal terahertz modulators for high speed wireless communication, neuromorphic photonics, and machine-learning metamaterials.

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (∼350 devices), fast switching (≤30 ns), excellent endurance (∼10

In this work, we examine the pressure and biaxial tensile strain dependence of the intervalley electron–phonon matrix elements in the lowest conduction band of GaAs, GaP, Si and Ge within the density functional perturbation theory. We study both individual transitions and average deformation potential values which can be used as parameters in transport simulations. In the case of a hydrostatic pressure, we draw the general conclusion that the hydrostatic pressure dependence of the intervalley electron–phonon matrix elements can be safely neglected in the interpretation of most commonly studied phenomena. In contrast, the case of a biaxial strain in silicon shows that strain-dependence should be taken into account in calculations of the intervalley electron–phonon matrix elements.

Nature Materials 16, 1216–1224 (2017); published online 23 October 2017; corrected after print 4 December 2017. In the version of this Article originally published, the x-axis units of Fig. 3a were incorrectly given as ms, and should have read μs. This has now been corrected. Two places in the text also needed amending to reflect this change: the penultimate sentence of Fig.

We report the effects of magnetic field (μ0H = 0–7 T) and hydrostatic pressure (P = 1 bar to 9.53 kbar) on electrical resistivity in the phase separated manganite La0.3Pr0.4Ca0.3MnO3. The resistivity shows a first-order transition from paramagnetic insulating to ferromagnetic metallic state at a temperature T = TIM in ambient pressure and zero magnetic field. The first-order transition becomes second-order with increasing pressure and/or magnetic field. Both hydrostatic pressure and magnetic field decrease the magnitude resistivity and shift the resistivity peak at T = TIM towards high temperature with different rates (dTIM/dH = 13.5 K/T for P = 1 bar, 8.8 K/T for P = 9.53 kbar, and dTIM/dP ∼ 4.42 K/kbar in zero field). However, the magnitude of the magnetoresistance decreases with increasing pressure. Baroresistance in the absence of magnetic field for ΔP = 9.53 kbar reaches nearly 100% around 150 K. Interestingly, while the resistivity at a constant temperature shows irreversible behaviour upon cycling ...