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99 results on '"Hattori, Mai"'

8. Association of Antihypertensive Effects of Esaxerenone with the Internal Sodium Balance in Dahl Salt-Sensitive Hypertensive Rats

Author

Hattori, Mai, primary, Rahman, Asadur, additional, Kidoguchi, Satoshi, additional, Jahan, Nourin, additional, Fujisawa, Yoshihide, additional, Morisawa, Norihiko, additional, Ohsaki, Hiroyuki, additional, Kobara, Hideki, additional, Masaki, Tsutomu, additional, Hossain, Akram, additional, Steeve, Akumwami, additional, and Nishiyama, Akira, additional

Published
2022
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14. Effects of an intrathecal TRPV1 antagonist, SB366791, on morphine-induced itch, body temperature, and antinociception in mice

Author

Sakakibara,Satoshi, Imamachi,Noritaka, Sakakihara,Manabu, Katsube,Yukiko, Hattori,Mai, and Saito,Yoji

Subjects
Journal of Pain Research
Abstract

Satoshi Sakakibara, Noritaka Imamachi, Manabu Sakakihara, Yukiko Katsube, Mai Hattori, Yoji SaitoDepartment of Anesthesiology, Shimane University Faculty of Medicine, Shimane, JapanCorrespondence: Noritaka ImamachiDepartment of Anesthesiology, Shimane University Faculty of Medicine, 89-1 Enyacho Izumo, Shimane693-8501, JapanTel +81 85 320 2295Fax +81 85 320 2292Email imamachi@med.shimane-u.ac.jpPurpose: Transient receptor potential vanilloid 1 (TRPV1) not only is activated by multiple stimuli but also is involved with histamine-induced itch. The effects of TRPV1 on morphine-induced itch are unknown. We examined the effects of intrathecal administration of TRPV1 antagonist on morphine-induced itch, body temperature, and antinociception for mice.Methods: Each C57/BL6j mouse was intrathecally administered with one of the following solutions: morphine, SB366791 (as the TRPV1 antagonist), morphine + SB366791, saline, or vehicle. For each mouse, each instance of observed scratching behavior was counted, the body temperature was measured, and the nociceptive threshold was determined using the tail-immersion test.Results: SB366791 dose-dependently reduced the scratching behavior induced by the administration of morphine. SB366791 and the morphine + SB366791 groups did not manifest an increase in body temperature. Antinociceptive effects were observed to occur dose-dependently for morphine but not for SB366791. Compared with morphine alone, the administration of morphine + SB366791 did not reduce significant antinociceptive effects.Conclusion: We propose that an intrathecal TRPV1 antagonist, SB366791, reduced morphine-induced itch without causing hyperthermia and did not suppress morphine-induced antinociception for mice.Keywords: pruritus, opioid, TRPV1, nociception, hyperthermia

Published
2019

22. Epitaxial Stabilization of Complete Solid-solution β-(AlxGa1–x)2O3(100) Films by Pulsed-laser Deposition

Author

Wakabayashi, Ryo, Yoshimatsu, Kohei, Hattori, Mai, Lee, Jung-Soo, Sakata, Osami, and Ohtomo, Akira

Abstract

We report on the lattice and band structures of complete solid-solution β-(AlxGa1–x)2O3(x= 0–1) films that were epitaxially grown on β-Ga2O3(100) substrates by using oxygen-radical-assisted pulsed-laser deposition. We found that oxygen-plasma treatment of the substrate surface was the key to achieving a two-dimensional growth mode of not only β-Ga2O3but also θ-Al2O3with the β-gallia structure. The band gap of β-(AlxGa1–x)2O3increased from 4.51 ± 0.02 eV (x= 0) to 6.91 ± 0.02 eV (x= 1). The x-dependence of the (100) spacing and band gap showed the anomalous bowing behavior, as the curvatures changed around x∼ 0.5. This tendency was ascribed to the different arrangements of the Al and Ga cations along their tetrahedral and octahedral site preference in the β-gallia structure. We also fabricated a short-period superlattice composed of θ-Al2O3and β-Ga2O3layers to verify the sharp interface from the X-ray diffraction profile.

Published
2021
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23. In-frame Val 216 -Ser 217 deletion of KIT in mild piebaldism causes aberrant secretion and SCF response

Author

Hattori, Mai, primary, Ishikawa, Osamu, additional, Oikawa, Daisuke, additional, Amano, Hiroo, additional, Yasuda, Masahito, additional, Kaira, Kyoichi, additional, Ishida-Yamamoto, Akemi, additional, Nakano, Hajime, additional, Sawamura, Daisuke, additional, Terawaki, Shin-ichi, additional, Wakamatsu, Kaori, additional, Tokunaga, Fuminori, additional, and Shimizu, Akira, additional

Published
2018
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30. β-Ga2O3用ITOオーミック電極

Author

OSHIMA, Takayoshi, Wakabayashi, Ryo, Hattori, Mai, Hashiguchi, Akihiro, Kawano, Naoto, Sasaki, Kohei, Masui, Takekazu, Kuramata, Akito, Yamakoshi, Shigenobu, Yoshimatsu, Kohei, and Ohtomo, Akira

Published
2016

37. Formation of indium–tin oxide ohmic contacts for β-Ga2O3

Author

Oshima, Takayoshi, primary, Wakabayashi, Ryo, additional, Hattori, Mai, additional, Hashiguchi, Akihiro, additional, Kawano, Naoto, additional, Sasaki, Kohei, additional, Masui, Takekazu, additional, Kuramata, Akito, additional, Yamakoshi, Shigenobu, additional, Yoshimatsu, Kohei, additional, Ohtomo, Akira, additional, Oishi, Toshiyuki, additional, and Kasu, Makoto, additional

Published
2016
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39. Generalized verrucosis caused by a GATA2 deficiency

Author

Hattori, Mai, primary, Shimizu, Akira, additional, Amano, Hiroo, additional, Ishikawa, Osamu, additional, Mitsui, Takeki, additional, Kaira, Kyoichi, additional, Oikawa, Daisuke, additional, Tokunaga, Fuminori, additional, Nakano, Hajime, additional, and Sawamura, Daisuke, additional

Published
2016
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43. Oxygen-radical-assisted pulsed-laser deposition of β-(AlxGa1-x)2O3 alloy films

Author

Wakabayashi, Ryo, Hattori, Mai, OSHIMA, Takayoshi, Mukai, Akira, Sasaki, Kohei, Masui, Takekazu, Kuramata, Akito, Yamakoshi, Shigenobu, Yoshimatsu, Kohei, and Ohtomo, Akira

Abstract

酸化ガリウムのデバイス応用を目指しβ-(AlxGa1-x)2O3薄膜成長を行った。Ga前駆体の高い蒸気圧が組成制御上の問題になっていた。本研究では、酸素ラジカルを用いたPLD法を行うことによって前駆体の蒸発を抑え、Al組成制御性の高いβ-(AlxGa1-x)2O3薄膜成長が可能であること示した。

Published
2014

46. Band alignment at <italic>β</italic>-(Al<italic>x</italic>Ga1−<italic>x</italic>)2O3/<italic>β</italic>-Ga2O3 (100) interface fabricated by pulsed-laser deposition

Author

Wakabayashi, Ryo, Hattori, Mai, Yoshimatsu, Kohei, Horiba, Koji, Kumigashira, Hiroshi, and Ohtomo, Akira

Subjects
*WIDE gap semiconductors, *EPITAXIAL layers, *PULSED laser deposition, *BAND gaps, *CONDUCTION bands, *X-ray photoelectron spectroscopy
Abstract

High-quality β-(AlxGa1−x)2O3 (x = 0–0.37) films were epitaxially grown on β-Ga2O3 (100) substrates by oxygen-radical-assisted pulsed-laser deposition with repeating alternate ablation of single crystals of β-Ga2O3 and α-Al2O3. The bandgap was tuned from 4.55 ± 0.01 eV (x = 0) to 5.20 ± 0.02 eV (x = 0.37), where bowing behavior was observed. The band alignment at the β-(AlxGa1−x)2O3/β-Ga2O3 interfaces was found to be type-I with conduction- and valence-band offsets of 0.52 ± 0.08 eV (0.37 ± 0.08 eV) and 0.13 ± 0.07 eV (0.02 ± 0.07 eV) for x = 0.37 (0.27), respectively. The large conduction-band offsets are ascribed to the dominant contribution of the cation-site substitution to the conduction band. [ABSTRACT FROM AUTHOR]

Published
2018
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