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1. Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Author

Rami Khazaka, Y. Bogumilowicz, Bernard Previtali, Sylvain David, Denis Rouchon, Nicolas Chevalier, Sylvain Maitrejean, Zdenek Chalupa, Hervé Boutry, Anne Marie Papon, V. Lapras, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[PHYS]Physics [physics], 010302 applied physics, Materials science, Nanostructure, business.industry, Stacking, General Physics and Astronomy, Silicon on insulator, 02 engineering and technology, Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Surfaces, Coatings and Films, Etching (microfabrication), 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

In this contribution, we report on the growth of Ge inside extremely thin 16-nm thick cavities through selective lateral growth of Ge on 300 mm silicon-on-insulator (0 0 1) substrates. We showed that the density of defects depends on the cavity shape, with extended defects such as micro-twins and stacking faults observed on the top surface along the 〈1 1 0〉 directions when the Si/Ge growth interface is along the 〈1 1 0〉 directions. The optimization of the cavity shape, by tuning the etching conditions, leads to a significant reduction of the defects in the Ge nanostructures, and this approach paves the road towards the co-integration of Si and Ge based devices.

Published
2018

2. InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

Author

J. Moeyaert, P. Bezard, Mickael Martin, Sylvain David, P. Hauchecorne, Georges Beainy, R. Alcotte, E. Eustache, Bassem Salem, M. Bawedin, T. Cerba, Thierry Baron, Gilles Patriarche, Eric Tournié, Franck Bassani, Hervé Boutry, Xavier Chevalier, G. Lombard, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Arkema (ARKEMA), Arkema (Arkema), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and ANR-15-IDEX-0002,UGA,IDEX UGA(2015)

Subjects
Materials science, Fabrication, 02 engineering and technology, Substrate (electronics), Field effect transistors, 01 natural sciences, Inorganic Chemistry, Etching (microfabrication), High electron mobility transistors, 0103 physical sciences, Materials Chemistry, Lamellar structure, Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Thin layers, Semiconducting III–V materials, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Etching, Organometallic vapor phase epitaxy, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Layer (electronics)
Abstract

International audience; We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (0 0 1)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20 nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30 nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15 nm spaced by almost 10 nm. Early electrical characterizations exhibit a current flow through the connected fins.

Published
2019

3. Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substrates

Author

Hervé Boutry, A.M. Papon, H. Dansas, Zdenek Chalupa, V. Lapras, Bernard Previtali, Sylvain Maitrejean, Y. Bogumilowicz, Rami Khazaka, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Oxide, Nanowire, Silicon on insulator, chemistry.chemical_element, Germanium, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, Transmission electron microscopy, Etching (microfabrication), 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Quantum tunnelling
Abstract

In this contribution, we report on the growth of horizontal Ge nanowires inside extremely thin tunnels surrounded by oxide. This is achieved through selective lateral growth of Ge on silicon-on-insulator (001) substrates. The 16 nm high tunnels are formed by HCl vapor etching of Si followed by Ge growth in the same epitaxy chamber. First, the benefit of growing the Ge nanowires at high temperature was highlighted to homogenize the length of the nanowires and achieve a high growth rate. Afterwards, we showed that increasing the tunnel depth led to a significant reduction in the growth rate. Finally, transmission electron microscopy showed that no defects were present in the Ge nanowires. These results are encouraging for the planar co-integration of heterogeneous materials on Si.In this contribution, we report on the growth of horizontal Ge nanowires inside extremely thin tunnels surrounded by oxide. This is achieved through selective lateral growth of Ge on silicon-on-insulator (001) substrates. The 16 nm high tunnels are formed by HCl vapor etching of Si followed by Ge growth in the same epitaxy chamber. First, the benefit of growing the Ge nanowires at high temperature was highlighted to homogenize the length of the nanowires and achieve a high growth rate. Afterwards, we showed that increasing the tunnel depth led to a significant reduction in the growth rate. Finally, transmission electron microscopy showed that no defects were present in the Ge nanowires. These results are encouraging for the planar co-integration of heterogeneous materials on Si.

Published
2018

4. InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOCVD for the fabrication of InAs FINFET

Author

Tiphaine Cerba, Mickaël Martin, Jeremy Moeyaert, Reynald Alcotte, Bassem Salem, Etienne Eustache, Philippe Bézard, Xavier Chevalier, Geoffrey Lombard, Franck Bassani, Sylvain David, Jean-Luc Rouvière, George Beainy, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Hervé Boutry, Maryline Bawedin, Thierry Baron, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Arkema (ARKEMA), Arkema (Arkema), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
[PHYS]Physics [physics]
Abstract

session III-V Devices on Group IV Substrates (6A-2.2); International audience

Published
2018

5. Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Author

Y. Bogumilowicz, T. Cerba, Hervé Boutry, Eric Tournié, Thierry Baron, Patrice Gergaud, Jean-Luc Rouvière, R. Alcotte, M. Bawedin, Franck Bassani, Laurent Cerutti, Mickael Martin, J. Moeyaert, Jean-Baptiste Rodriguez, Sylvain David, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Phase boundary, Materials science, Silicon substrate, 02 engineering and technology, Chemical vapor deposition, Two-step growth, 01 natural sciences, Metal organic chemical vapor deposition, Metal, Surface roughness, Si substrate, 0103 physical sciences, Materials Chemistry, 010302 applied physics, [PHYS]Physics [physics], Metals and Alloys, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, X-ray diffraction, Crystallography, Chemical engineering, visual_art, visual_art.visual_art_medium, 0210 nano-technology, Layer (electronics), Gallium antimonide, Rocking-curve
Abstract

International audience; Antiphase boundaries free GaSb epitaxial layers with low surface roughness (< 0.5 nm) have been synthesized on standard microelectronic 300 mm nominal (001)-Si substrates by metal organic chemical vapor deposition using a two-step growth process. By adjusting the growth temperature and the thickness of the nucleation layer, antiphase boundary free GaSb layers as thin as 250 nm are obtained. The 12% lattice mismatch between GaSb and Si is accommodated by both the formation of threading dislocations and a periodic array of 90° misfit dislocations at the interface. A GaSb layer inserted between AlSb barriers has been grown on an optimized GaSb/(001)-Si buffer layer and exhibits room temperature photoluminescence.

Published
2018

6. Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InP

Author

Alexandre Arnoult, H. Grampeix, Maud Vinet, Mickael Martin, Mathilde Billaud, Philippe Ferrandis, Julien Duvernay, Thierry Baron, Mikael Casse, Gilles Reimbold, Hervé Boutry, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, NANO 2017 programLabEx Minos ANR-10-LABX-5501French 'Recherches Technologiques de Base' (Basis Technological Research)RENATECH programs, European Project: 688784,H2020,H2020-ICT-2015,INSIGHT(2015), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'Énergie Atomique et aux Énergies Alternatives (CEA) - Grenoble-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] (LAAS), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UPS), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique [Toulouse] (INP)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UPS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique [Toulouse] (INP), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Université Grenoble Alpes (UGA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Université de Toulon ( UTLN ), Laboratoire des technologies de la microélectronique ( LTM ), Université Joseph Fourier - Grenoble 1 ( UJF ) -Centre National de la Recherche Scientifique ( CNRS ), Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ), Laboratoire d'Electronique et des Technologies de l'Information ( CEA-LETI ), Université Grenoble Alpes ( UGA ) -Direction de Recherche Technologique (CEA) ( DRT (CEA) ), and Commissariat à l'énergie atomique et aux énergies alternatives ( CEA ) -Commissariat à l'énergie atomique et aux énergies alternatives ( CEA )

Subjects
Materials science, Deep-level transient spectroscopy, Analytical chemistry, Oxide, General Physics and Astronomy, 02 engineering and technology, Chemical vapor deposition, Dielectric, 01 natural sciences, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Deposition (phase transition), Metalorganic vapour phase epitaxy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], 010302 applied physics, [ PHYS ] Physics [physics], 021001 nanoscience & nanotechnology, Capacitor, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology, Molecular beam epitaxy
Abstract

International audience; To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposi-tion. In this work, we examined the influence of the III-V material surface cleaning and the semiconductor growth technique on the electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InP(100) substrates. By means of the capacitance-voltage measurements, we demonstrated that samples do not have the same total oxide charge density depending on the cleaning solution used [(NH 4) 2 S or NH 4 OH] prior to oxide deposition. The determination of the interface trap density revealed that a Fermi-level pinning occurs for samples grown by metalorganic chemical vapor deposition but not for similar samples grown by molecular beam epitaxy. Deep level transient spectroscopy analysis explained the Fermi-level pinning by an additional signal for samples grown by metalorganic chemical vapor deposition, attributed to the tunneling effect of carriers trapped in oxide toward interface states. This work emphasizes that the choice of appropriate oxide and cleaning treatment is not enough to prevent a Fermi-level pinning in III-V metal-oxide-semiconductor capacitors. The semiconductor growth technique needs to be taken into account because it impacts the trapping properties of the oxide. Published by AIP Publishing.

Published
2018

7. HfO2/Al2O3/InGaAs MOSCAP Structures and InGaAs Plasma Nitridation Elaborated in a 300mm Pilot Line

Author

Hervé Boutry, Thierry Baron, Oliver Faynot, Thomas Ernst, Christophe Vallée, Mathilde Billaud, Gilles Reimbold, Julien Duvernay, Bernard Pelissier, Mickaël Cassé, Mickael Martin, Zdenek Chalupa, Maud Vinet, Helen Grampeix, Sylvain David, Laboratoire des technologies de la microélectronique (LTM), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Plasma nitridation, Materials science, business.industry, 020209 energy, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, 02 engineering and technology, Line (text file), 021001 nanoscience & nanotechnology, 0210 nano-technology, business, Cartography
Abstract

The achievement of a good high-k oxide/InGaAs interface quality is a key challenge to obtain high performance MOSFET. Associating Al2O3 and HfO2 in a bilayer oxide is interesting to benefit from the good interface quality obtained with Al2O3 and the better electrostatic control achievable with HfO2. Furthermore, some recent work evidenced the reduction of the interface trap density (Dit) by using a plasma nitridation process [1]. For the first time, we evaluated the passivation properties of a Al2O3/HfO2 bilayer and a nitridation treatment on industrial equipment compatible with 300 mm Si wafers. First, we investigated the number of Al2O3 ALD cycles required to obtain a good interface. Second, we evaluated the effect of a nitridation treatment on the Al2O3/InGaAs interface properties performed on a 300 mm capacitive plasma tool. MOSCAP structures were fabricated on a 27 nm thick In0.53Ga0.47As layer grown on InP substrates. The samples were cleaned in a NH4OH solution (4%) for 1 min at room temperature and rinsed in deionized water. Then, Al2O3 and HfO2 films were deposited in a ALD chamber at 300°C with trimethylaluminium (TMA), Hafnium tetrachloride (HfCl4) and H2O as precursors. The ALD cycle numbers for Al2O3 were 0, 3, 5, 8 and 10 and 32 for HfO2. A post-deposition annealing was carried out at 370°C for 30 min in N2 ambient. For the nitridation study, one InGaAs sample was directly treated with a NH3 plasma for 120 s at 50W and two samples were treated with a NH3 plasma or a N2 plasma for 120 s at 50W after the deposition of Al2O3 (10 ALD cycles) to prevent damages on the III-V layer. After the plasma treatment, Al2O3 was again deposited to reach a 8 nm-thick layer for electrical characterization. Ni/Au gate electrode was deposited through a shadow mask by e-beam evaporation. The sample without Al2O3 (Fig1.a) presents distorted profiles, especially at 10 kHz, sign of a poor InGaAs/HfO2 interface quality. Depositing three Al2O3 cycles (fig.1.b) allows a limited improvement of the characteristics. The dispersion in accumulation of the 10 and 30 kHz curves is reduced but no clear accumulation plateau can be seen. From 5 to 10 cycles, samples (c-e), the situation is significantly improved with a clear accumulation regime. The interface trap densities (Dit) were estimated using the conductance method [2] and were found equal to ~11, 6.1 and 5.5 ×1012 cm-2eV-1 for the 5, 8 and 10 cycles samples respectively. A clear improvement is obtained from 5 to 8 cycles while only a slight improvement is obtained from 8 to 10 cycles. Compare to the Al2O3/InGaAs capacitor (fig.1.f), the best compromise between low Dit and high level capacitance appears to be 8 Al2O3 cycles. Wide frequency dispersion in accumulation can be seen after NH3 treatment without the Al2O3 protection (fig.2c) due to border traps in the dielectric. The plasma treatment prior to the dielectric deposition induces defects at the beginning of the nucleation. This dispersion is reduced when the treatment is implemented through an Al2O3 layer (fig.2b and d). N2 plasma reduces the capacitance whereas NH3 plasma does not deteriorate the C-V characteristics and keeps the same capacitance as the sample without nitridation. According to XPS analysis, N is clearly detected after plasma treatment. The N1s peak can be divided into two components, N1s A at 399.0 eV and N1s B at 397.9 eV. The N1s A component has been attributed to N-O bonds, and N1s B to N-Ga bonds [3]. Residual As oxides are reduced with NH3 (fig. 3e and f) but no As nitride is evidenced. After plasma treatment, the Ga3+ peak increases significantly (fig.3c and d), because of N incorporation at the interface. The Ga3+ component can be attributed to Ga-O and Ga-N bonds resulting in an oxynitride formation [1]. In conclusion, Al2O3/HfO2 bilayer was optimized on a 300 mm equipment to achieve low Dit and high level capacitance (1.75 µF/cm²). NH3 nitridation process performed on a 300 mm capacitive plasma tool integrates nitrogen at the InGaAs surface without deterioration of the C-V characteristics. Low Dit is estimated at 2×1012 cm-2eV-1 at room temperature after NH3 plasma which is close to the value shown in [1] obtained with an ECR plasma. Measurements at lower temperature will further explain the Ditenergy distribution. [1] T. Hoshii, J. Appl. Phys., vol. 112, no. 7, p. 073702, 2012. [2] R. Engel-Herbert, Appl. Phys. Lett., vol. 97, no. 6, p. 062905, 2010. [3] T. S. Lay, J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol. 22, no. 3, p. 1491, 2004. Figure 1

Published
2015

8. Integration of III-V materials on (001)-Si substrate for optoelectronic and nanoelectronic applications

Author

Tiphaine Cerba, Mickaël Martin, Jeremy Moeyaert, Sylvain David, Jean-Luc Rouvière, Laurent Cerutti, Reynald Alcotte, Jean-Baptiste Rodriguez, Hervé Boutry, Franck Bassani, Yann Bogumilowicz, Eric Tournié, Thierry Baron, Clot, Marielle, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), NASA Goddard Space Flight Center (GSFC), Institut de Physique Nucléaire d'Orsay (IPNO), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics, [PHYS] Physics [physics]
Abstract

International audience

Published
2017

9. Al2O3/InGaAs interface study on MOS capacitors for a 300mm process integration

Author

J. Duvernay, Mikael Casse, Thomas Ernst, Helen Grampeix, Maud Vinet, Bernard Pelissier, Mickael Martin, Hervé Boutry, M. Billaud, Zdenek Chalupa, and Thierry Baron

Subjects
010302 applied physics, Materials science, business.industry, Interface (computing), Oxide, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, chemistry.chemical_compound, Capacitor, chemistry, X-ray photoelectron spectroscopy, law, 0103 physical sciences, Process integration, Optoelectronics, Electrical measurements, 0210 nano-technology, business, Deposition (law), High-κ dielectric
Abstract

Al 2 O 3 /InGaAs interface has been studied and optimized for a 300mm compatible process. XPS analysis and electrical measurements of MOS capacitors revealed that a NH4OH treatment associated with TMA precursor pulse before the ALD deposition is efficient to remove InGaAs oxides. This yields to a good Al 2 O 3 /InGaAs interface quality with a low D it value (∼3×1012 cm−2eV−1), and passivated border traps.

Published
2015

10. Monte Carlo simulation of electron transport in narrow gap heterostructures

Author

Hervé Boutry, Jean-Luc Thobel, F. Dessenne, Olivier Bonno, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
Physics, Solid-state physics, Condensed matter physics, Monte Carlo method, General Physics and Astronomy, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Thermal conduction, Schrödinger equation, [SPI]Engineering Sciences [physics], Impact ionization, symbols.namesake, Effective mass (solid-state physics), symbols, Electronic band structure
Abstract

International audience; A Monte Carlo method is proposed for the study of in-plane electron transport in narrow gap heterostructures. Special attention is paid to the consequences of the strong nonparabolicity of the conduction band. The electron states are calculated within the framework of envelope function theory, which leads to a Schrödinger equation with an energy-dependent effective mass. This equation is solved in a numerically efficient way by including a standard eigenvalue solver in an iterative method. The mixing between conduction and valence band states is taken into account, at an approximate level, through a “Bloch overlap factor,” defined by analogy with the case of three-dimensional transport. This model was applied to a typical AlSb/InAs single well structure, and realistic results were obtained. The important role played by the Bloch overlap factor is demonstrated. When it is neglected, the mobility is strongly underestimated. A more sophisticated double well structure was also investigated. It is intended to reduce impact ionization, thanks to transfer toward the thinner well. This transfer is found to depend strongly on the potential profile

Published
2002

11. Junction technology outlook for sub-28nm FDSOI CMOS

Author

Olivier Rozeau, Maud Vinet, Cyrille Le Royer, Fabrice Nemouchi, Perrine Batude, Hervé Boutry, J. Borrel, C. Plantier, Jean-Michel Hartmann, Claire Fenouillet-Beranger, Sylvain Barraud, Yves Morand, Louis Hutin, Thomas Ernst, V. Carron, and Laurent Grenouillet

Subjects
Materials science, CMOS, business.industry, Process integration, Electrical engineering, Key (cryptography), Silicon on insulator, business, Efficient energy use
Abstract

We review in this paper some key enabling process integration modules, the development of which will allow pursuing the trend of energy efficiency improvement in sub-28nm FDSOI technologies.

Published
2014

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