1. High-Efficiency Planarization of SiC Wafers by Water-CARE (Catalyst-Referred Etching) Employing Photoelectrochemical Oxidation
- Author
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Pho Van Bui, Daisetsu Toh, Ai Isohashi, Yasuhisa Sano, Satoshi Matsuyama, Ryosuke Ohnishi, Kazuto Yamauchi, and Hideka Kida
- Subjects
Photoelectrochemical oxidation ,Materials science ,Mechanical Engineering ,Condensed Matter Physics ,Catalysis ,chemistry.chemical_compound ,Chemical engineering ,chemistry ,Mechanics of Materials ,Etching (microfabrication) ,Chemical-mechanical planarization ,Silicon carbide ,General Materials Science ,Wafer - Abstract
Catalyst-referred etching (CARE) is an abrasive-free and damage-free polishing method that involves applying a catalytic reaction at the contact point of the catalyst surface and workpiece in a chemical solution. An atomically flat silicon carbide (SiC) wafer surface can be obtained by the CARE process. Recently, it was found that water can be used as a chemical solution, even in the case of SiC polishing. However, its current removal rate of 4H-SiC (0001) 4°off-axis substrate is only 2 nm/h and is expected to increase. In this study, the use of photoelectrochemical oxidation in combination with the CARE process using water was investigated, successfully increasing the removal rate up to approximately 100 nm/h.
- Published
- 2019
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