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3. Effect of an intensified multifactorial intervention on cardiovascular outcomes and mortality in type 2 diabetes (J-DOIT3): an open-label, randomised controlled trial

5. Efficacy and Safety of 5-Aminolevulinic Acid Combined with Iron on Skeletal Muscle Mass Index and Physical Performance of Patients with Sarcopenia: A Multicenter, Double-Blinded, Randomized-Controlled Trial (ALADDIN Study)

13. Fear of hypoglycemia and its determinants in insulin-treated patients with type 2 diabetes mellitus

14. Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes

17. MOESM2 of Efficacy of dapagliflozin versus sitagliptin on cardiometabolic risk factors in Japanese patients with type 2 diabetes: a prospective, randomized study (DIVERSITY-CVR)

19. Dapagliflozin improves treatment satisfaction in overweight patients with type 2 diabetes mellitus: a patient reported outcome study (PRO study).

20. MOESM1 of Dapagliflozin improves treatment satisfaction in overweight patients with type 2 diabetes mellitus: a patient reported outcome study (PRO study)

23. Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers

24. ダパグリフロジン投与における肥満2型糖尿病患者の治療満足度への影響:a patient reported outcome study (PRO study)

25. Effects of linagliptin versus voglibose on treatment-related quality of life in patients with type 2 diabetes: sub-analysis of the L-STEP study

26. Effect of an intensified multifactorial intervention on cardiovascular outcomes and mortality in type 2 diabetes (J-DOIT3): an open-label, randomised controlled trial

27. Distribution of cardiac troponin I in the Japanese general population and factors influencing its concentrations

38. Novel Designed SiC Devices for High Power and High Efficiency Systems

40. 600 V -Class V-Groove SiC MOSFETs

45. Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes

47. Glucagon Underutilized Among Type 1 Diabetes Mellitus Patients in Japan

49. 0.97 mΩcm2/820 V 4H-SiC Super Junction V-Groove Trench MOSFET

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