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Hole-transporting materials (HTMs) based on the 10H, 10'H-9,9'-spirobi [acridine] core (BSA50 and BSA51) were synthesized, and their electronic properties were explored. Experimental and theoretical studies show that the presence of rigid 3,6-dimethoxy-9H-carbazole moieties in BSA 50 brings about improved hole mobility and higher work function compared to bis(4-methoxyphenyl)amine units in BSA51, which increase interfacial hole transportation from perovskite to HTM. As a result, perovskite solar cells (PSCs) based on BSA50 boost power conversion efficiency (PCE) to 22.65 %, and a PSC module using BSA50 HTM exhibits a PCE of 21.35 % (6.5×7 cm) with a V

Surface passivation is a critical factor for improving the photovoltaic performance of perovskite solar cells. However, more robust principle investigations are required to build effective passivation strategies enabling high-performance perovskite solar cells. Here, it is demonstrated that a non-reactive organic polymer induces band-bending at the perovskite surface through a passivation effect, furthermore suppressing Pb0 formation at the perovskite surface. Consequently, the photovoltaic performance and stability of the perovskite solar cells can be improved. The key findings show that the polymer passivation layer can control the Fermi-level at the perovskite surface, which changes the band structure at the perovskite surface and affects carrier dynamics by suppressing non-radiative pathways. Moreover, the organic polymer can prevent degradation of the perovskite surface. By using the passivating layer, the open circuit voltage improves from 1.046 to 1.100 V, the photoconversion efficiency exceeds 21%, and the stability of the perovskite solar cells is substantially improved. The organic polymer poly(bisphenol A anhydride-co-1,3-phenylenediamine) (PEIm) was used to control the perovskite band structure, and this passivation mechanism is revealed here.

Phase control of low-dimensional metal-halide perovskites (LDPs) greatly affects their optoelectronic properties, and phase-pure LDPs are desirable to achieve efficient perovskite optoelectronic devices such as solar cells and light-emitting diodes. Herein, we introduce a method to obtain phase-pure LDP by using a neutral amine, cyclohexylmethyl amine (CHMA). The incorporation of CHMA into a formamidinium lead bromide (FAPbBr(3)) precursor solution leads to the protonation of the amine that allows the phase transition of 3D FAPbBr(3) to phase-pure quasi-2D perovskite (n = 2). For comparison, cyclohexylmethylammonium bromide (CHMABr), which is a conventional form of ammonium halide salt with the same organic moiety to the amine, is used, which resulted in a 2D perovskite (n = 1). The perovskite films fabricated by the two different methodologies are characterized. This study paves the way for further research on the realization of phase-pure perovskites and their relevant optoelectronic devices.

An ideal conducting polymer anode (CPA) in organic and perovskite light-emitting diodes (LEDs) requires high electrical conductivity κ, high work function WF, and prevention of exciton quenching between an anode and an overlying emitting layer. However, increasing the κ and WF at the same time has been a very challenging unsolved issue due to their trade-off relationship: previous approaches to increase the WF have reduced the films’ κ and vice versa. Therefore, delicate molecular scale control of the conducting polymer compositions are required to solve this fundamental issue. Here, we introduce an effective molecular scale control strategy to decouple the WF with κ in a CPA while maintaining blocking capability of exciton quenching. This change resulted in a high current efficiency up to 52.86 cd A−1 (10.93% ph el−1) in green polycrystalline perovskite LEDs. Our results provide a significant clue to develop effective CPAs for highly-efficient organic and perovskite LEDs.

Metal halide perovskites (MHPs) have emerged as promising candidates for next-generation display because of their advantages on luminescent properties and external quantum efficiency exceeding 20 % in less than 5 years since the first efficient EL operation. However, the short operational lifetime of PeLEDs is limiting their practical application. Especially, the ion migration in perovskite under intense electric field is known to destroy the crystal structure and cause device failure. Here, we suggest new strategies to overcome the lifetime limitation of PeLEDs. First, we introduced the proton-transfer-induced 3D/2D hybrid structure with extremely suppressed ion migration and low defect density, showing extremely suppressed luminance overshoot and >20 times longer operational lifetime. Also, we could further prolong the lifetime of PeLEDs by using ideal mixed-cation system and suppressing the electric-field-induced catastrophic failure by inducing self-assembled core/shell structure.

A summary of recent advances in the near-infrared light-emitting diodes that are fabricated by solution-processed means, with coverage of devices based on organic semiconductors, halide perovskites and colloidal quantum dots., Near-infrared light-emitting diodes based on solution-processed semiconductors, such as organics, halide perovskites and colloidal quantum dots, have emerged as a viable technological platform for biomedical applications, night vision, surveillance and optical communications. The recently gained increased understanding of the relationship between materials structure and photophysical properties has enabled the design of efficient emitters leading to devices with external quantum efficiencies exceeding 20%. Despite considerable strides made, challenges remain in achieving high radiance, reducing efficiency roll-off and extending operating lifetime. This Review summarizes recent advances on emissive materials synthetic methods and device key attributes that collectively contribute to improved performance of the fabricated light-emitting devices.

Defects of metal-halide perovskites detrimentally influence the optoelectronic properties of the thin film and, ultimately, the photovoltaic performance of perovskite solar cells (PSCs). Especially, defect-mediated nonradiative recombination that occurs at the perovskite interface significantly limits the power conversion efficiency (PCE) of PSCs. In this regard, interfacial engineering or surface treatment of perovskites has become a viable strategy for reducing the density of surface defects, thereby improving the PCE of PSCs. Here, an organic molecule, tris(5-((tetrahydro-2H-pyran-2-yl)oxy)pentyl) phosphine oxide (THPPO), is synthesized and introduced as a defect passivation agent in PSCs. The P.O terminal group of THPPO, a Lewis base, can passivate perovskite surface defects such as undercoordinated Pb2+. Consequently, improvement of PCEs from 19.87 to 20.70% and from 5.84 to 13.31% are achieved in n-i-p PSCs and hole-transporting layer (HTL)-free PSCs, respectively.

Interface engineering and passivating contacts are key enablers to reach the highest efficiencies in photovoltaic devices. While printed carbon-graphite back electrodes for hole-transporting material (HTM)-free perovskite solar cells (PSCs) are appealing for fast commercialization of PSCs due to low processing costs and extraordinary stability, this device architecture so far suffers from severe performance losses at the back electrode interface. Herein, a 2D perovskite passivation layer as an electron blocking layer (EBL) at this interface to substantially reduce interfacial recombination losses is introduced. The formation of the 2D perovskite EBL is confirmed through X-ray diffraction, photoemission spectroscopy, and an advanced spectrally resolved photoluminescence microscopy mapping technique. Reduced losses that lead to an enhanced fill factor and V-OC are quantified by electrochemical impedance spectroscopy and J(SC)-V-OC measurements. This enables reaching one of the highest reported efficiencies of 18.5% for HTM-free PSCs using 2D perovskite as an EBL with a significantly improved device stability.

Despite organic/inorganic lead halide perovskite solar cells becoming one of the most promising next‐generation photovoltaic materials, instability under heat and light soaking remains unsolved. In this work, a highly hydrophobic cation, perfluorobenzylammonium iodide (5FBzAI), is designed and a 2D perovskite with reinforced intermolecular interactions is engineered, providing improved passivation at the interface that reduces charge recombination and enhances cell stability compared with benchmark 2D systems. Motivated by the strong halogen bond interaction, (5FBzAI)2PbI4 used as a capping layer aligns in in‐plane crystal orientation, inducing a reproducible increase of ≈60 mV in the V oc, a twofold improvement compared with its analogous monofluorinated phenylethylammonium iodide (PEAI) recently reported. This endows the system with high power conversion efficiency of 21.65% and extended operational stability after 1100 h of continuous illumination, outlining directions for future work., 2D perovskites are of great importance to increase both the efficiency and stability of perovskite interfaces. Motivated by the stronger halogen bond interaction, (5FBzAI)2PbI4 used as a capping layer in 3D/2D systems self‐organizes with an in‐plane crystal orientation, inducing a reproducible increase of ≈60 mV in the V oc, and remarkable operational stability.

Perovskite light-emitting diodes (PeLEDs) based on three-dimensional (3D) polycrystalline perovskites suffer from ion migration, which causes overshoot of luminance over time during operation and reduces its operational lifetime. Here, we demonstrate 3D/2D hybrid PeLEDs with extremely reduced luminance overshoot and 21 times longer operational lifetime than 3D PeLEDs. The luminance overshoot ratio of 3D/2D hybrid PeLED is only 7.4% which is greatly lower than that of 3D PeLED (150.4%). The 3D/2D hybrid perovskite is obtained by adding a small amount of neutral benzylamine to methylammonium lead bromide, which induces a proton transfer from methylammonium to benzylamine and enables crystallization of 2D perovskite without destroying the 3D phase. Benzylammonium in the perovskite lattice suppresses formation of deep-trap states and ion migration, thereby enhances both operating stability and luminous efficiency based on its retardation effect in reorientation., Ion migration can induce overshoot of luminance in normal 3D perovskite light-emitting diode devices and results in reduced lifetime. Here Kim et al. show that the ion migration and overshoot can be suppressed in 3D/2D hybrid perovskites, leading to 21 times longer operational lifetime.

Metal-halide perovskite (MHP) nanoparticles (NPs) have attracted considerable attention as a promising light emitter for efficient light-emitting diodes (LEDs) due to their high color-purity and photoluminescence quantum efficiency (PLQE). In contrast to MHP polycrystalline (PC) bulk films, charge carrier recombination as well as ion migration dynamics in MHP NP films have not been studied yet despite the importance to achieve high electroluminescence efficiency in LEDs. Here, we use steady-state and transient photoluminescence measurements, and photo-responsivity analysis to study the charge carrier recombination and ion migration dynamics in MHP NP films and then, compare these with those of MHP PC films. Results show that MHP NP films do not undergo the severe ion migration and have dominant radiative recombination of excitons by efficiently confining electron-hole pairs. As a result, MHP NP films have high photo-stability, photo-responsibility, and PLQE (> 60%). Our findings provide insight into charge carrier and ion dynamics in MHP NP films, and confirm the potential of NP films for use in efficient LEDs.

n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ∼0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (∼13.8 cd/A) than did inverted PLEDs with pristine graphene (∼2.74 cd/A). N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.

Organic-inorganic halide perovskite light emitting diode (PeLED) as a narrow band emitter is an emerging research field. To overcome limited electroluminescence efficiency of PeLEDs, trap-assisted non-radiative recombination in polycrystalline perovskite films should be reduced and the electron-hole balance in the PeLEDs must be improved. In this work, we investigated a practical way to effectively overcome above-mentioned issues by unravelling additive-based nanocrystal pinning (A-NCP) process using the carefully controlled electron transporting organic material solutions diluted in a volatile non-polar solvent. We found that without affecting the intrinsic crystal structure, A-NCP improved the radiative recombination rate by reducing effective defect density at grain boundaries due to the defect healing effect. Moreover, it induced the improved electron-hole balance in the dominantly p-type CH3NH3PbBr3 based PeLEDs, leading to the highest efficiency of 8.79% ever reported to date among organic-inorganic halide perovskite-based green PeLEDs. Therefore, our work gives the effective approaches for efficient PeLEDs from the investigations of the role of A-NCP incorporating a tiny amount of an electron transporting molecule as an additive to increase radiative recombination rate of polycrystalline perovskite films.

Thermoelastic analysis by means of three-dimensional polyhedral elements based on the Smoothed Finite elements method (S-FEM), for example nodal Cell-based S-FEM (CS-FEM), Node-based S-FEM (NS-FEM), and Edge-based S-FEM (ES-FEM), was studied. S-FEM allows implicit shape functions, making it possible to construct shape functions of S-FEM based polyhedral elements in a straightforward manner. The performance of S-FEM based polyhedral elements was compared with one another and with the conventional finite elements including hexahedral and tetrahedral element. Numerical examples show that the polyhedral elements by means of CS-FEM and ES-FEM provide better accuracy and convergence rate than conventional hexahedral finite elements, while the polyhedral elements by means of NS-FEM leads to spurious mode.

Flexible electronic devices fabricated on plastic substrate are more desirable than rigid counterparts for future displays, lightings, or solar cells. For flexible electronics to become practical, the indium-tin-oxide (ITO) electrode should be replaced due to its brittleness, increasing cost, and chemical instability. Graphene has emerged as a promising material for flexible transparent conducting electrodes because of its unique electronic and mechanical properties with high optical transmittance. Therefore, graphene has been widely used in flexible electronic devices including light-emitting diodes (LEDs), solar cells (SCs), and field-effect transistors (FETs). However, for practical applications of graphene in flexible electronics, its limitations should also be overcome. This review describes the use of graphene in LEDs, SCs and FETs, and various strategies to overcome the deficiencies of graphene to obtain highly-efficient and stable flexible electronics. Finally, we present future prospects and suggest further directions for research on graphene-based flexible electronic devices.

A simple and accurate scheme for modeling microstructures is proposed with the help of element trimming combined with signed distance function based boundary smoothing. To accommodate randomly distributed fibers in unidirectional composites, digital image processing is used. The interfaces of multi-materials are identified by introducing a signed distance function, and then, square background elements crossing the interfaces are simply trimmed and divided to represent a single material behavior by a single element. After element trimming, the elements that are polygon-shaped in the two-dimensional domain are split into conventional three-node triangle elements (six-node prism elements in the three-dimensional domain) available in many commercial software packages. The present modeling scheme was verified through benchmark examples in terms of the accuracy and efficiency and then applied to the modeling of unidirectional composites based on real microscopic images to evaluate the equivalent elastic properties.

Polyhedral elements with an arbitrary number of nodes or non-planar faces, obtained with an edge-based smoothed finite element method, retain good geometric adaptability and accuracy in solution. This work is intended to extend the polyhedral elements to nonlinear elastic analysis with finite deformations. In order to overcome the volumetric locking problem, a smoothing domain-based selective smoothed finite element method scheme and a three-field-mixed cell-based smoothed finite element method with nodal cells were developed. Using several numerical examples, their performance and the accuracy of their solutions were examined, and their effectiveness for practical applications was demonstrated as well.

Summary The node or edge based smoothed finite element method is extended to develop polyhedral elements that are allowed to have an arbitrary number of nodes or faces, and so retain a good geometric adaptability. The strain smoothing technique and implicit shape functions based on the linear point interpolation makes the element formulation simple and straightforward. The resulting polyhedral elements are free from the excessive zero-energy modes, and yield a robust solution very much insensitive to mesh distortion. Several numerical examples within the framework of linear elasticity demonstrate the accuracy and convergence behavior. The smoothed finite element methods based polyhedral elements in general yield solutions of better accuracy and faster convergence rate than those of the conventional finite element methods. This article is protected by copyright. All rights reserved.

A versatile metal nanowiring platform enables the fabrication of Ag nanowires (AgNW) at a desired position and orientation in an individually controlled manner. A printed, flexible AgNW has a diameter of 695 nm, a resistivity of 5.7 μΩ cm, and good thermal stability in air. Based on an Ag nanowiring platform, an all-NW transistors array, as well as various optoelectronic applications, are successfully demonstrated.

Organometal halide perovskites are promising photo-absorption materials in solar cells due to their high extinction coefficient, broad light absorption range and excellent semiconducting properties. The highest power conversion efficiency (PCE) of perovskite solar cells (PrSCs) is now 20.1%. However, a high-temperature processed mesoscopic metal oxide (e.g., TiO2) must be removed to realize flexible PrSCs on plastic substrates using low temperature processes. Although the planar heterojunction (PHJ) structure can be considered as the most appropriate structure for flexible PrSCs, they have shown lower PCEs than those with a mesoscopic metal oxide layer. Therefore, development of interfacial layers is essential for achieving highly efficient PHJ PrSCs, and necessary in fabrication of flexible PrSCs. This review article gives an overview of progress in PHJ PrSCs and the roles of interfacial layers in the device, and suggests a practical strategy to fabricate highly efficient and flexible PHJ PrSCs. We conclude with our technical suggestion and outlook for further research direction.

Highly efficient organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) based on graphene anode are developed for the first time. Chemically inert graphene avoids quenching of excitons by diffused metal atom species from indium tin oxide. The flexible PeLEDs with graphene anode on plastic substrate show good bending stability; they provide an alternative and reliable flexible electrode for highly efficient flexible PeLEDs.

A novel flexible encapsulation method (Flex Lami-capsulation) is reported, which can be applied in the roll-to-roll process for mass production of organic electronic devices. Flex Lami-capsulation is very simple, fast, and getter-free, and is as effective as glass encapsulation. Use of this method is feasible in large-area flexible displays and does not have the drawbacks of conventional encapsulation methods.

Flexible transparent electrode materials such as conducting polymers, silver nanowires, carbon nanotubes and graphenes are being investigated as possible replacements for conventional brittle inorganic electrodes. However, they have critical drawbacks of low work function (WF), resulting in a high hole injection barrier to an overlying semiconducting layer in simplified organic or organic–inorganic hybrid perovskite light-emitting diodes (OLEDs or PeLEDs). Here, we report a new anode material (AnoHIL) that has multifunction of both an anode and a hole injection layer (HIL) as a single layer. The AnoHIL has easy WF tunability up to 5.8 eV and thus makes ohmic contact without any HIL. We applied our anodes to simplified OLEDs, resulting in very high efficiency (62% ph el−1 for single and 88% ph el−1 for tandem). The AnoHIL showed a similar tendency in simplified PeLEDs, implying universal applicability to various optoelectronics. We also demonstrated large-area flexible lightings using our anodes. Our results provide a significant step toward the next generation of high-performance simplified indium tin oxide (ITO)-free light-emitting diodes. Flexible transparent electrode materials, including conducting polymers, silver nanowires, carbon nanotubes, and graphene, have been investigated to replace conventional brittle indium tin oxide (ITO). However, they have serious problems of low work function (WF), resulting in a high hole injection barrier to overlying semiconducting layers. Now, Tae-Woo Lee from Seoul National University in Korea and co-workers have developed ITO-free simplified organic and perovskite light-emitting diodes with high-efficiency by using a single-layered high WF polymeric anode, which can act as both an anode and a hole injection layer. Since the high WF polymeric anode make efficient hole injection to the overlying organic and perovskite semiconducting layers, they dramatically improve the device efficiencies even without any hole injection layer. We report a new anode material that has multifunction of both an anode and a hole injection layer (HIL) as a single layer. Our anode has easy work function tunability up to 5.8 eV and thus makes ohmic contact without any HIL. We applied our anodes to simplified organic light-emitting diodes, resulting in high efficiency (62% ph el−1 for single and 88% ph el−1 for tandem). Our anode showed a similar tendency in simplified perovskite light-emitting diodes. We also demonstrated large-area flexible lightings using our anodes. Our results provide a significant step toward the next generation of high-performance simplified light-emitting diodes.

This paper reports highly bright and efficient CsPbBr3 perovskite light-emitting diodes (PeLEDs) fabricated by simple one-step spin-coating of uniform CsPbBr3 polycrystalline layers on a self-organized buffer hole injection layer and stoichiometry-controlled CsPbBr3 precursor solutions with an optimized concentration. The PeLEDs have maximum current efficiency of 5.39 cd A-1 and maximum luminance of 13752 cd m-2 . This paper also investigates the origin of current hysteresis, which can be ascribed to migration of Br- anions. Temperature dependence of the electroluminescence (EL) spectrum is measured and the origins of decreased spectrum area, spectral blue-shift, and linewidth broadening are analyzed systematically with the activation energies, and are related with Br- anion migration, thermal dissociation of excitons, thermal expansion, and electron-phonon interaction. This work provides simple ways to improve the efficiency and brightness of all-inorganic polycrystalline PeLEDs and improves understanding of temperature-dependent ion migration and EL properties in inorganic PeLEDs.

A self-organized hole extraction layer (SOHEL) with high work function (WF) is designed for energy level alignment with the ionization potential level of CH3 NH3 PbI3 . The SOHEL increases the built-in potential, photocurrent, and power conversion efficiency (PCE) of CH3 NH3 PbI3 perovskite solar cells. Thus, interface engineering of the positive electrode of solution-processed planar heterojunction solar cells using a high-WF SOHEL is a very effective way to achieve high device efficiency (PCE = 11.7% on glass).

Organic–inorganic hybrid perovskite solar cells are fabricated using a watersoluble, self-doped conducting polyaniline graft copolymer based on poly(4styrenesulfonate)- g -polyaniline (PSS -g- PANI) as an effi cient hole-extraction layer (HEL) because of its advantages, including low-temperature solution processability, high transmittance, and a low energy barrier with perovskite photoactive layers. Compared with conventional poly(3,4-ethylenedioxythiop hene):poly(styrene sulfonate) (PEDOT:PSS) dispersed in water solution, PSS g- PANI molecules are dissolved in water because of the polymeric dopant covalently bonded with PANI, and can steadily remain as an initial solution during long-term storage and over a wide pH range to fabricate a HEL with fewer surface defects. The built-in potential and device characteristics are substantially improved because of the surface energy state of PSS -g- PANI below Fermi-energy level. Moreover, the PSS -g- PANI mixed with electronwithdrawing perfl uorinated ionomer (PFI) exhibits a higher work function (5.49 eV) and deeper surface energy state below the Fermi level; thus, an ohmic contact at the HEL/methylammonium lead iodide perovskite interface is obtained. Finally, the power conversion effi ciency was increased from 7.8%the perovskite solar cells with PEDOT:PSS to 12.4%those with the PSS -g- PANI:PFI.

We report on the development of flexible organic solar cells (OSCs) incorporating graphene sheets synthesized by chemical vapor deposition (CVD) as transparent conducting electrodes on polyethylene terephthalate (PET) substrates. A key barrier that must be overcome for the successful fabrication of OSCs with graphene electrodes is the poor-film properties of water-based poly(3,4-ethylenedioxythiphene):poly(styrenesulfonate) (PEDOT:PSS) when coated onto hydrophobic graphene surfaces. To form a uniform PEDOT:PSS film on a graphene surface, we added perfluorinated ionomers (PFI) to pristine PEDOT:PSS to create 'GraHEL', which we then successfully spin coated onto the graphene surface. We systematically investigated the effect of number of layers in layer-by-layer stacked graphene anode of an OSC on the performance parameters including the open-circuit voltage (Voc), short-circuit current (Jsc), and fill factor (FF). As the number of graphene layers increased, the FF tended to increase owing to lower sheet resistance, while Jsc tended to decrease owing to the lower light absorption. In light of this trade-off between sheet resistance and transmittance, we determined that three-layer graphene (3LG) represents the best configuration for obtaining the optimal power conversion efficiency (PCE) in OSC anodes, even at suboptimal sheet resistances. We finally developed efficient, flexible OSCs with a PCE of 4.33%, which is the highest efficiency attained so far by an OSC with CVD-grown graphene electrodes to the best of our knowledge.

We employed a low-cost solution-processed ultrathin insulating polymeric layer of poly(4-hydroxystyrene) (PHS), with a high glass transition temperature (Tg ∼ 185 °C), as an interfacial layer between the polymer:fullerene photoactive layer and the Al negative electrode for enhancing device power conversion efficiency (PCE) of polymer bulk-heterojunction photovoltaic cells and investigated the roles of the interfacial nanolayer by ultraviolet photoemission spectroscopy and capacitance–voltage measurement. The thin polymeric layer forms a dipole layer and causes the vacuum level of the adjacent negative electrode to shift upward, which resulted in an increase of the built-in potential. As a result, the open-circuit voltage and PCE of the device using a PHS nanolayer were remarkably improved. We finally achieved a very high PCE of 6.5% with the PHS/Al negative electrode which is even much better than that of the device using an Al electrode (5.0%). The solution-processed inexpensive PHS layer with a high Tg can be an attractive alternative to conventional vacuum-deposited low-work-function metal and insulating metal fluoride interfacial layers.

Dimensionally-engineered perovskite heterostructures are highly attractive, as recently shown to be useful for enhancing the stability and efficiency in perovskite solar cells. Here, we first report piezo-electric and -phototronic effects found in two-dimensional (2D)|3D perovskite heterostructures under various pressures. The piezo-electric and -phototronic effects are strongly enhanced by employing 2D|3D heterostructure instead of a 3D single layer in the perovskite devices, which is believed to be due to energy-band modulation and band-misalignment lessening by piezoelectrically-polarized charges induced under moderate compressive pressure. Furthermore, the perovskite 2D|3D piezo-electric and -phototronic device shows only a 29% reduction of its initial performance even under 30-days atmospheric conditions and almost perfect endurance properties. These results suggest that dimensionally-engineered perovskite heterostructures may provide a fundamentally good way to improve perovskite-based electronic and optoelectronic devices.

Organic-inorganic lead halide perovskites with over 23% power conversion efficiency have attracted enormous academic and industrial attention due to their low-cost fabrication and high device performance. Self-passivated tin oxide as an electron transport layer has shown potential mainly due to the enhanced electron transfer, stability and reduced hysteresis device features. Here we report on novel, non-colloidal tin oxide precursors based on acetylacetonate (one halide free and two halogenated with Cl and Br respectively). We explore the unique film morphology acquired from the non-colloidal precursors and the improved device performance they yield. Our results show that the halide residue in the films plays an impactful role in the thermal durability of the fabricated SnO2 film, as well as providing a passivation layer. Moreover, our optimized tin oxide films achieved an unprecedented power conversion efficiency of 22.19% in planar perovskite solar cells (21.4% certified by Newport), and once upscaled to large-area modules, 16.7% devices based on a 15 cm(2) area were achieved.