17 results on '"Huang, Chong-Rong"'
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2. Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
3. Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate
4. Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer
5. Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
6. Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer
7. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator
8. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
9. Improved I on /I off Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al 0.5 GaN Etch-Stop Layer.
10. The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design
11. Low-Mg out-diffusion of a normally off p-GaN gate high-electron-mobility transistor by using the laser activation technique
12. High Threshold Voltage Normally off Ultra-Thin-Barrier GaN MISHEMT with MOCVD-Regrown Ohmics and Si-Rich LPCVD-SiNx Gate Insulator
13. Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal
14. Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
15. Grey model for evaluation and analysis of competitiveness in the packaging and testing industry
16. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al 2 O 3 /AlN Composite Gate Insulator.
17. The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design.
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