46 results on '"Hueting, Raymond J. E."'
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2. Electrostatic Doping and Devices
3. A new SiC power module assembly based on silver sintering bonding
4. Opportunities and Challenges of Pressure Contact Packaging for Wide Bandgap Power Modules
5. Opportunities and Challenges of Pressure Contact Packaging for Wide Bandgap Power Modules
6. Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging
7. Avalanche-Mode Si Light-Emitting Transistor for Narrow-Band Emission Near 760 nm
8. Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applications.
9. Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging.
10. Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes.
11. Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current
12. On the Accuracy of the Cox–Strack Equation and Method for Contact Resistivity Determination
13. Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions.
14. Toward GHz Switching in SOI Light Emitting Diodes
15. Minority Carrier Injection in High-Barrier Si-Schottky Diodes
16. Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche Diodes
17. Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes
18. Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes
19. Electrostatic Doping in Semiconductor Devices
20. Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology
21. Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS
22. The Avalanche-Mode Superjunction LED
23. An Improved Analytical Model for Carrier Multiplication Near Breakdown in Diodes
24. Interface Trap Density Estimation in FinFETs Using the Method in the Subthreshold Regime
25. Ideal RESURF Geometries
26. Opto-electronic modeling of light emission from avalanche-mode silicon p+n junctions
27. Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate.
28. On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( ${\pi }$ -FET)
29. Electric Field and Interface Charge Extraction in Field-Plate Assisted RESURF Devices
30. Impact of Interface Charge on the Electrostatics of Field-Plate Assisted RESURF Devices
31. Integration of a Piezoelectric Layer on Si FinFETs for Tunable Strained Device Applications
32. Piezoelectric Strain Modulation in FETs
33. Interface Trap Density Estimation in FinFETs Using the g\mathrm{ m}/ I\mathrm{ D} Method in the Subthreshold Regime.
34. Extraction of second order piezoelectric parameters in bulk acoustic wave resonators
35. One-Dimensional Physical Model to Predict the Internal Quantum Efficiency of Si-Based LEDs
36. Fabrication and Characterization of the Charge-Plasma Diode
37. Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETs
38. The Charge Plasma P-N Diode
39. Validity of the Parabolic Effective Mass Approximation in Silicon and Germanium n-MOSFETs With Different Crystal Orientations.
40. Analysis of the Subthreshold Current of Pocket or Halo-Implanted nMOSFETs.
41. Analysis of the Kirk Effect in Silicon-Based Bipolar Transistors With a Nonuniform Collector Profile.
42. Gate-Drain Charge Analysis for Switching in Power Trench MOSFETs.
43. The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?
44. Monolithic optical link in silicon-on-insulator CMOS technology.
45. Opportunities for shear energy scaling in bulk acoustic wave resonators.
46. Optimized reflector stacks for solidly mounted bulk acoustic wave resonators.
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