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7. Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN.

Author

Wang, Lulu, Duo, Yiwei, Song, Yijian, Huo, Ziqiang, Yang, Jiankun, Ran, Junxue, Yan, Jianchang, Wang, Junxi, Li, Jinmin, and Wei, Tongbo

Subjects
CHEMICAL vapor deposition, FLEXIBLE structures, DISLOCATION density, OPTOELECTRONIC devices, EPITAXY
Abstract

In this work, we present a stress-free AlN film with improved crystal quality assisted by h-BN and demonstrate the mechanical exfoliation of wafer-scale single-crystal AlN freestanding membrane and reveal the controllable exfoliation mechanism of AlN. Uniform and continuous wafer-scale h-BN is directly grown on c-plane sapphire using a flow modulation epitaxy mode by metal-organic chemical vapor deposition. The nucleation and evolution processes of quasi-van der Waals epitaxy (QvdWE) of AlN on h-BN are revealed. It is found that O2-plasma-treated h-BN can effectively promote the nucleation islands of AlN and contribute to the release of biaxial stress and the reduction of dislocation density in the epilayers. Eventually, the QvdWE growth of a stress-free AlN film (0.08 GPa) is achieved, and wafer-scale mechanical exfoliation of the AlN membrane has been realized. This work provides an effective strategy for the quality improvement of III-nitride films and paves the way for the vertical structure and flexible deep-ultraviolet optoelectronic devices. [ABSTRACT FROM AUTHOR]

Published
2024
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