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2. UHF-Dielectrophoresis Crossover Frequency as a New Marker for Discrimination of Glioblastoma Undifferentiated Cells

Author

Marie-Odile Jauberteau, Serge Battu, Canan Baristiran Kaynak, Fabrice Lalloué, Mehmet Kaynak, Arnaud Pothier, Barbara Bessette, Sofiane Saada, Cristiano Palego, Pierre Blondy, Claire Dalmay, Remi Manczak, Gaëlle Bégaud, Thomas Provent, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Innovations for High Performance Microelectronics (IHP), IHP Frankfurt, MINACOM, Homéostasie Cellulaire et Pathologies (HCP), Université de Limoges (UNILIM)-CHU Limoges-Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST FR CNRS 3503), Contrôle de l’Activation Cellulaire, Progression Tumorale et Résistance thérapeutique (CAPTuR), Institut Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST), Université de Limoges (UNILIM)-Université de Limoges (UNILIM), Bangor University, and Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)

Subjects
BiCMOS chip, biological cell manipulation, glioblastoma cells, high frequency dielectrophoresis, [SDV]Life Sciences [q-bio], Cellular differentiation, [PHYS.PHYS.PHYS-BIO-PH]Physics [physics]/Physics [physics]/Biological Physics [physics.bio-ph], glioblastoma cells, Microfluidics, Crossover, Cell, [SDV.CAN]Life Sciences [q-bio]/Cancer, 02 engineering and technology, [SDV.BC]Life Sciences [q-bio]/Cellular Biology, 01 natural sciences, [SPI]Engineering Sciences [physics], 0202 electrical engineering, electronic engineering, information engineering, medicine, Radiology, Nuclear Medicine and imaging, Instrumentation, high frequency dielectrophoresis, ComputingMilieux_MISCELLANEOUS, BiCMOS chip, Radiation, Chemistry, biological cell manipulation, 010401 analytical chemistry, 020206 networking & telecommunications, Dielectrophoresis, 0104 chemical sciences, Cell biology, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, medicine.anatomical_structure, Ultra high frequency, Cell culture, [SDV.IB]Life Sciences [q-bio]/Bioengineering, Intracellular
Abstract

International audience; This article introduces the first results of dielectric spectroscopy characterization of glioblastoma cells; measuring their crossover frequencies in the Ultra High Frequency range (above 50 MHz) by dielectrophoresis techniques. Experiments were performed on two glioblastoma lines: U87-MG and LN18 that were cultured following different conditions, in order to achieve different phenotypic profiles. We demonstrate here that the presented dielectrophoresis electrokinetic method can be used to discriminate the undifferentiated from the differentiated cells. In this study, microfluidic lab-on-chip systems implemented on Bipolar-Complementary Oxide Semiconductor (BiCMOS) technology are used allowing single cell handling and analysis. Based on characterizations of their own intracellular features, both selected glioblastoma cell lines cultured in distinct culture conditions have shown clear differences of DEP crossover frequency signatures compared to differentiated cells cultured in normal medium. These results support the concept and validate the efficiency for cell characterization in glioblastoma pathology.

Published
2019
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3. Discrimination Cellulaire par Dielectrophorèse Ultra Haute Fréquence : Etude des Fréquences de Transition de Cellules de Glioblastomes

Author

Rémi Manczak, Sofiane Saada, Thomas Provent, Claire Dalmay, Barbara Bessette, Gaëlle Bégaud, Serge Battu, Pierre Blondy, Marie-Odile Jauberteau, Canan Baristiran Kaynak, Mehmet Kaynak, Cristiano Palego, Fabrice Lalloué, Arnaud Pothier, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Contrôle de l’Activation Cellulaire, Progression Tumorale et Résistance thérapeutique (CAPTuR), Institut Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST), Université de Limoges (UNILIM)-Université de Limoges (UNILIM), IHP, 15236 Francfort (Oder), Allemagne, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Université de Bangor, Bangor, LL57 1UT, Royaume-Uni, SUMCASTEC Participants Community, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Bangor University, and pothier, arnaud

Subjects
[SPI]Engineering Sciences [physics], [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SDV.CAN] Life Sciences [q-bio]/Cancer, [SPI] Engineering Sciences [physics], [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, [SDV.CAN]Life Sciences [q-bio]/Cancer, [SDV.BC]Life Sciences [q-bio]/Cellular Biology, [SDV.BC] Life Sciences [q-bio]/Cellular Biology, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; Cet article présente les premiers résultats de spectroscopie diélectrique menées sur des cellules de lignées de glioblastomes (GBM) en mesurant, par diélectrophorèse, leurs fréquences de transition dans le domaine des Ultra Hautes Fréquences (>50 MHz). L’approche de caractérisation électrocinétique employée peut être utilisée pour discriminer des spécificités de propriétés diélectriques intracellulaires entre des cellules pouvant présenter des différences de profils phénotypiques : cellules indifférenciées vs différenciées. Grace à un microsystème microfluidique, permettant l’analyse de cellules individuelles, nous avons pu mettre en évidence des différences notables de fréquences de transition sur deux lignées de GBM que nous pouvons corréler à des spécificités phénotypiques et biologiques.

Published
2019
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4. High-Frequency Dielectrophoresis Characterization of Differentiated vs Undifferentiated Medulloblastoma Cells

Author

Marie Odile Jauberteau, Mariateresa Mancuso, Serge Battu, Fabrice Lalloué, Caterina Merla, Remi Manczak, Mehmet Kaynak, Arnaud Pothier, Sofiane Saada, Canan Baristiran Kaynak, Barbara Bessette, Cristiano Palego, Arianna Casciati, Pierre Blondy, Claire Dalmay, Gaëlle Bégaud, Mirella Tanori, Barbara Tanno, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Homéostasie Cellulaire et Pathologies (HCP), Université de Limoges (UNILIM)-CHU Limoges-Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST FR CNRS 3503), Contrôle de l’Activation Cellulaire, Progression Tumorale et Résistance thérapeutique (CAPTuR), Institut Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST), Université de Limoges (UNILIM)-Université de Limoges (UNILIM), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Bangor University, Agenzia Nazionale per le nuove Tecnologie, l’energia e lo sviluppo economico sostenibile (ENEA), MINACOM, Institut de Recherche en Communications Optiques et Microondes (IRCOM), Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), and OSA

Subjects
0106 biological sciences, Medulloblastoma, Dielectric spectroscopy, Cell phenotype, Chemistry, Cell, Differentiated vs undifferentiated cells, [SDV.BC]Life Sciences [q-bio]/Cellular Biology, Dielectrophoresis, medicine.disease, 01 natural sciences, Characterization (materials science), Cell biology, 03 medical and health sciences, 0302 clinical medicine, Biological specificity, medicine.anatomical_structure, Cell culture, HF dielectrophoresis, 010608 biotechnology, 030220 oncology & carcinogenesis, medicine, ComputingMilieux_MISCELLANEOUS, Intracellular, Cell discrimination
Abstract

International audience; This paper introduces first results of characterization of medullobastoma cell lines using high frequency dielectrophoresis (HF-DEP) approach at frequencies ranging up to few hundreds of MHz. Such technique enables accessing intracellular dielectric property specificities on individual cells. Actually, the frequency dependent DEP behavior of several medullobastoma cells has been studied showing clear differences between cells from different types which correlate well the biological specificity established though cell phenotype characterization. These results should pave the way to novel and complementary cell discrimination approach based on a label free HF-DEP crossover frequency signature measurement. © 2018 FESB, University of Split.

Published
2018
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5. Discrimination of Glioblastoma Cancer Stem Cells by measuring their UHF-Dielectrophoresis Crossover Frequency

Author

Claire Dalmay, Serge Battu, Mehmet Kaynak, Arnaud Pothier, Barbara Bessette, Gaëlle Bégaud, Pierre Blondy, Fabrice Lalloué, M.O. Jauberteau, Sofiane Saada, Cristiano Palego, C. Baristiran Kaynak, Mesut Inac, Remi Manczak, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Contrôle de l’Activation Cellulaire, Progression Tumorale et Résistance thérapeutique (CAPTuR), Institut Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST), Université de Limoges (UNILIM)-Université de Limoges (UNILIM), IHP, Innovations for High Performance Microelectronics (IHP), IHP Frankfurt, Lehigh University [Bethlehem], Bangor University, and Sindou, Philippe

Subjects
education.field_of_study, Electric fields, Cellular differentiation, 020208 electrical & electronic engineering, Microfluidics, Crossover, Population, Statistics, 020206 networking & telecommunications, 02 engineering and technology, Stem cells, [SDV.BC]Life Sciences [q-bio]/Cellular Biology, Dielectrophoresis, Cell biology, Chemically defined medium, Sociology, Cancer stem cell, Frequency measurement, 0202 electrical engineering, electronic engineering, information engineering, Dielectrics, Stem cell, education, [SDV.BC] Life Sciences [q-bio]/Cellular Biology, Electrodes, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; This paper introduces firsts results of characterization of glioblastoma cell lines; measuring their crossover frequencies by dielectrophoresis (DEP) technics in the UHF frequency range (above 50 MHz). LN18 line cells were cultured following different conditions, in order to achieve an enrichment of cancer stem cells (CSCs). The DEP electrokinetic method is used to discriminate the CSCs from the differentiated cells. In this study, microfluidic lab-on-chip systems implemented on Bipolar-Complementary Oxide Semiconductor (BiCMOS) technology is used allowing single cell handling and analysis. Based on measurements of their own intracellular specificities, the enriched CSCs population, cultured in dedicated defined medium, have shown clear differences of DEP crossover frequency signatures compared to differentiated cells cultured in normal medium. That demonstrates the concept and validates the technique efficiency for CSC discrimination in glioblastoma pathology.

Published
2018
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6. Substrate Integrated Waveguides for mm-wave Functionalized Silicon Interposer

Author

Matthias Wietstruck, Darine Kaddour, Giuseppe Acri, Florence Podevin, Selin Tolunay Wipf, Matthieu Bertrand, Vincent Puyal, Philippe Ferrari, Mehmet Kaynak, C. Wipf, Emmanuel Pistone, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Laboratoire de Conception et d'Intégration des Systèmes (LCIS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Université Grenoble Alpes (UGA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation ( IMEP-LAHC ), Université Joseph Fourier - Grenoble 1 ( UJF ) -Institut polytechnique de Grenoble - Grenoble Institute of Technology ( Grenoble INP ) -Institut National Polytechnique de Grenoble ( INPG ) -Université Savoie Mont Blanc ( USMB [Université de Savoie] [Université de Chambéry] ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes ( UGA ), Laboratoire de Conception et d'Intégration des Systèmes ( LCIS ), Institut polytechnique de Grenoble - Grenoble Institute of Technology ( Grenoble INP ) -Université Grenoble Alpes ( UGA ), Équipe MIcro et Nanosystèmes pour les Communications sans fil ( LAAS-MINC ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ), Innovations for High Performance Microelectronics ( IHP ), Techniques of Informatics and Microelectronics for integrated systems Architecture ( TIMA ), Université Joseph Fourier - Grenoble 1 ( UJF ) -Institut polytechnique de Grenoble - Grenoble Institute of Technology ( Grenoble INP ) -Institut National Polytechnique de Grenoble ( INPG ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Grenoble Alpes ( UGA ), and IHP - Leibniz-Institut für innovative Mikroelektronik

Subjects
010302 applied physics, Materials science, business.industry, 020206 networking & telecommunications, Topology (electrical circuits), 02 engineering and technology, Substrate (electronics), 01 natural sciences, [ SPI.TRON ] Engineering Sciences [physics]/Electronics, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, CMOS, law, 0103 physical sciences, Shielded cable, 0202 electrical engineering, electronic engineering, information engineering, Interposer, Optoelectronics, business, Realization (systems), Waveguide, ComputingMilieux_MISCELLANEOUS, Electronic circuit
Abstract

This paper presents D-band mm-wave SIWs, which are embedded in a high-resistivity silicon interposer. Thanks to the interposer thickness equal to $\pmb{70\ \mu} \mathbf{m}$ , high-performance SIW were obtained, with measured attenuation constant between 0.4 and 0.6 dB/mm from 110 GHz to 170 GHz. These first results pave the way for the realization of high performance passive circuits and antennas embedded in the interposer. Also, by using a fully shielded waveguide highly insensitive to adj acent wave-guiding and radiating structures, this topology provides significant advantages for packaging solutions at mm-wave frequencies. Such a functionalized interposer could offer lower cost, higher electrical performance as compared to standard CMOS technologies.

Published
2018
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7. 2 nd - and 4 th -Order planar dual-mode ring filters at 140 GHz in a 130nm BiCMOS technology

Author

Anne-Laure Franc, Matthias Wietstruck, Gaetan Prigent, Mehmet Kaynak, Fabio Coccetti, Pedro Rynkiewicz, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and IHP - Leibniz-Institut für innovative Mikroelektronik

Subjects
Materials science, business.industry, Capacitive sensing, 020208 electrical & electronic engineering, Bandwidth (signal processing), Dual mode, 020206 networking & telecommunications, 02 engineering and technology, Bicmos technology, Resonator, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Planar, Band-pass filter, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Insertion loss, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; Integrated planar filters at 140 GHz are hereby presented. 2 nd -order dual-mode ring-based filters are studied with and without MIM capacitive loads which allow a footprint reduction by 2.7. Both filters exhibit similar electric response with a 3-dB relative fractional bandwidth (FBW3dB) of 12 % and 4 dB of insertion loss. Two 4 th -order filters are formed by cascading two identic cells (with or without the MIM). They present a narrow FBW3dB of 9.5 % with insertion loss of approximately 10 dB. In this case, the capacitive loading leads to a 1.9 area reduction factor.

Published
2017
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8. Millimeter-wave three-state tunable stopband resonator based on integrated MEMS

Author

Fabio Coccetti, Selin Tolunay Wipf, Anne-Laure Franc, Mehmet Kaynak, Gaetan Prigent, Pedro Rynkiewicz, Matthias Wietstruck, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), RF Microtech France, IHP - Leibniz-Institut für innovative Mikroelektronik, Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), and Pistre, Karine

Subjects
Microelectromechanical systems, Materials science, [SPI.OTHER] Engineering Sciences [physics]/Other, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, 02 engineering and technology, Stopband, Microstrip, Stub (electronics), Resonator, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Electric power transmission, Electrical length, Extremely high frequency, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Tunable resonator, MEMS, Integrated, Millimeter wave, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; This paper presents a fully integrated MEMS-based tunable stopband resonator. Two MEMS available in a SiGe BiCMOS technology are implemented to modify the electrical length of a microstrip stub that targets three center frequencies which are 60 GHz, 77 GHz, and 94 GHz. The agreement between the electromagnetic simulations and the measurement results is very good, proving the high reliability of the technology.

Published
2017
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9. Tunable dual-mode ring filter based on BiCMOS embedded MEMS in V-band

Author

Anne-Laure Franc, Mehmet Kaynak, Matthias Wietstruck, Gaetan Prigent, Selin Tolunay Wipf, Fabio Coccetti, Pedro Rynkiewicz, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), RF Microtech France, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), and Pistre, Karine

Subjects
Microelectromechanical systems, Tunable filter, MEMS, Integrated filter, BiCMOS, Millimeter wave, V-band, Materials science, [SPI.OTHER] Engineering Sciences [physics]/Other, business.industry, 020208 electrical & electronic engineering, Process (computing), 020206 networking & telecommunications, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Gallium arsenide, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, chemistry.chemical_compound, Quality (physics), Band-pass filter, chemistry, Hardware_GENERAL, Filter (video), Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, V band
Abstract

International audience; This paper presents the design of a fully integrated tunable filter implemented in SiGe-BiCMOS technology. The narrow bandpass filter (12%) is aimed at addressing two operating frequencies at 56 GHz and 74 GHz. A synthesis is proposed to control the nominal filter as well as tunability which is obtained by the use of embedded MEMs. A good agreement between electromagnetic simulation and measurement is obtained which proves the quality of both the proposed concept and the technological process.

Published
2017
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10. 60 GHz planar filters and transmission lines characterization in 0.25µm BiCMOS techgnology

Author

Pedro Rynkiewicz, Mehmet Kaynak, Gaetan Prigent, Fabio Coccetti, Anne-Laure Franc, Matthias Wietstruck, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), RF Microtech France, IHP - Leibniz-Institut für innovative Mikroelektronik, Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), IHP Frankfurt, and Innovations for High Performance Microelectronics (IHP)

Subjects
010302 applied physics, Engineering, Waveguide filter, business.industry, Coplanar waveguide, 020206 networking & telecommunications, 02 engineering and technology, Distributed element filter, Constant k filter, 01 natural sciences, Microstrip, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Band-pass filter, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Optoelectronics, Prototype filter, business, m-derived filter
Abstract

International audience; In this article, three main aspects of passive millimeter-wave integrated filter realization are exposed. Firstly, the importance of the transmission line choice is discussed by comparing microstrip and coplanar waveguide (CPW) in BiCMOS 0.25μm technology. 50-Ω transmission lines exhibit similar losses around 0.6 dB/mm at 60 GHz. Secondly, two filter topologies, a dual-behavior resonator based filter and a dualmode ring based filter, are compared in terms of insertion losses, surface area and out-of-band rejection. They are both designed using microstrip lines and exhibit a similar 3dB fractional bandwidth (FBW 3dB ) around 12% with a 60 GHz center frequency. Finally, a miniaturization method is presented using Metal-Insulator-Metal (MIM) capacitive loading. A loaded filter is then realized and characterized. Similar electrical performance are demonstrated with a size reduction factor of 2.3.

Published
2017
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11. Miniaturisation de filtres millimétriques en anneau par chargement capacitif en technologie CMOS 0,25 µm

Author

Rynkiewicz, Pedro, Franc, Anne-Laure, Coccetti, Fabio, Wietstruck, Matthias, Kaynak, Mehmet, Prigent, Gaëtan, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Franc, Anne-Laure, Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and IHP - Leibniz-Institut für innovative Mikroelektronik

Subjects
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

12. BiCMOS Integrated Microfluidic Packaging by Wafer Bonding for Lab-on-Chip Applications

Author

Barbaros Cetindogan, Alexander Goritz, Mehmet Kaynak, Arnaud Pothier, Canan Baristiran-Kaynak, Cristiano Palego, Matthias Wietstruck, Steffen Marschmeyer, Mirko Fraschke, Andreas Mai, Thomas Voss, Mesut Inac, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Bangor University, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Wafer bonding, 020208 electrical & electronic engineering, 020206 networking & telecommunications, Nanotechnology, 02 engineering and technology, Wafer backgrinding, Die (integrated circuit), Embedded Wafer Level Ball Grid Array, [SPI]Engineering Sciences [physics], Die preparation, 0202 electrical engineering, electronic engineering, information engineering, Wafer testing, Wafer, Probe card, ComputingMilieux_MISCELLANEOUS
Abstract

In this paper, a fully BiCMOS integrated microfluidic technology platform for Lab-on Chip (LoC) applications is presented. Fusion bonding and adhesive bonding techniques are applied to realize a 3-wafer-stack integration. A glass wafer is used on top of the BiCMOS wafer and the Si channel wafer to enable simultaneous optical and electrical measurements. An alignment accuracy of less than 1 µm between BiCMOS and channel wafer is achieved while having channel heights between 30 and 100 µm. All the microfluidic process integration steps are kept below 300 °C. The microfluidic inlet and the outlet are positioned on the backside of the wafer stack to provide both the optical inspection and the electrical measurements from the wafer's front side. The developed wafer level integration technique provides high throughput solutions for emerging chemical and biological LoC applications.

Published
2017
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13. Résonateur bi-mode accordable intégré en bande millimétrique

Author

Rynkiewicz, Pedro, Franc, Anne-Laure, Coccetti, Fabio, Tolunay Wipf, Selin, Wietstruck, Matthias, Kaynak, Mehmet, Prigent, Gaëtan, Franc, Anne-Laure, Pistre, Karine, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and IHP - Leibniz-Institut für innovative Mikroelektronik

Subjects
[SPI]Engineering Sciences [physics], [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SPI.OTHER] Engineering Sciences [physics]/Other, [SPI] Engineering Sciences [physics], [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017

14. BiCMOS Microfluidic Sensor for Single Cell Label-Free Monitoring Through Microwave Intermodulation

Author

Palego, Cristiano, Perry, G., Hjeij, Fatima, Dalmay, Claire, Bessaudou, Annie, Blondy, Pierre, Pothier, Arnaud, Lalloué, Fabrice, Jauberteau-Marchan, Marie-Odile, Bessette, Barbara, Kaynak, Canan Baristiran, Wietstruck, Matthias, Kaynak, Mehmet, Casbon, M., Benedikt, J., Barrow, D., Porch, A., Bangor University, MINACOM (XLIM-MINACOM), XLIM (XLIM), Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), Homéostasie Cellulaire et Pathologies (HCP), Université de Limoges (UNILIM)-CHU Limoges-Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST FR CNRS 3503), IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), School of Engineering [Cardiff], Cardiff University, IHP & Bangor University, and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SDV.IB]Life Sciences [q-bio]/Bioengineering, [SDV.BC]Life Sciences [q-bio]/Cellular Biology, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

15. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

Author

Subhajit Guha, Christian Walczyk, Christian Wenger, Brice Gautier, Mirko Fraschke, Philippe Hamoumou, Eduardo Perez, Francesco Santoni, Thomas Schroeder, Pauline Calka, Gang Niu, Lambert Alff, Aldo Di Carlo, Matthias Auf der Maur, INL - Hétéroepitaxie et Nanostructures ( INL - H&N ), Institut des Nanotechnologies de Lyon ( INL ), École Centrale de Lyon ( ECL ), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon ( CPE ) -Institut National des Sciences Appliquées de Lyon ( INSA Lyon ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ) -École Centrale de Lyon ( ECL ), Université de Lyon-Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Centre National de la Recherche Scientifique ( CNRS ), Institut de biologie et chimie des protéines [Lyon] ( IBCP ), Université Claude Bernard Lyon 1 ( UCBL ), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique ( CNRS ), IHP Frankfurt, INL - Plateforme Technologique Nanolyon ( INL - Nanolyon ), HYCHICO, Laboratoire de Spectronomie Moléculaire ( SMIL ), Université de Bourgogne ( UB ), Istituto Nazionale di Fisica Nucleare [Sezione di Roma 1] ( INFN ), Istituto Nazionale di Fisica Nucleare, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Institut de biologie et chimie des protéines [Lyon] (IBCP), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Innovations for High Performance Microelectronics (IHP), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), INL - Dispositifs Electroniques (INL - DE), Leibniz institute for innovative microelectronics [Frankfurt (Oder)] (IHP), and Istituto Nazionale di Fisica Nucleare [Sezione di Roma 1] (INFN)

Subjects
Materials science, chemistry.chemical_element, 02 engineering and technology, Settore ING-INF/01 - Elettronica, 01 natural sciences, Article, Protein filament, [SPI]Engineering Sciences [physics], Reliability (semiconductor), 0103 physical sciences, [ SPI ] Engineering Sciences [physics], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical conductor, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Multidisciplinary, business.industry, Conductive atomic force microscopy, 021001 nanoscience & nanotechnology, Resistive random-access memory, chemistry, Electrode, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, [ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Tin, business, Current density
Abstract

Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

Published
2016
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16. Microfluidic Embedded BiCMOS Process for DEP Trapping of Single Cell

Author

Kaynak, Canan Baristiran, Goritz, A., Fraschke, M., Wietstruck, Matthias, Kaynak, Mehmet, Hjeij, Fatima, Dalmay, Claire, Blondy, Pierre, Pothier, Arnaud, Palego, Cristiano, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), MINACOM (XLIM-MINACOM), Bangor University, and Collaboration IHP & Bangor University

Subjects
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2016

17. Characterization of CPW transmission lines and 60GHz DBR filters in 0.25µm BiCMOS technologly

Author

Pedro Rynkiewicz, Fabio Coccetti, Matthias Wietstruck, Mehmet Kaynak, Anne-Laure Franc, Gaetan Prigent, LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Groupe de Recherche en Electromagnétisme (LAPLACE-GRE), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Équipe MIcro et Nanosystèmes pour les Communications sans fil (LAAS-MINC), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), RF Microtech France, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), Pistre, Karine, Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and IHP - Leibniz-Institut für innovative Mikroelektronik

Subjects
010302 applied physics, Materials science, [SPI.OTHER] Engineering Sciences [physics]/Other, business.industry, 020206 networking & telecommunications, 02 engineering and technology, BiCMOS, 01 natural sciences, Bicmos technology, Microstrip, Resonator, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Electric power transmission, Filter (video), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Insertion loss, Optoelectronics, business, Electrical impedance
Abstract

International audience; In this paper, CPW transmission lines and Dual Behavior Resonator (DBR) filters implemented in SiGe BiCMOS 0.25-μm technology are presented. Three CPW lines, whose characteristic impedances are between 35 Ω and 80 Ω, exhibit attenuation loss lower than 0.7 dB/mm at 60 GHz. Two DBR filters based either on microstrip or on CPW transmission lines are compared. The filter with microstrip lines has already been measured and exhibits 11.6% of 3-dB relative fractional bandwidth (FEWmb) and 5.4 dB of insertion losses at 60 GHz. The second one is supposed to have similar performance with lower insertion loss (3.3 dB) and its measurement will be available for the conference.

Published
2015
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18. MEMSWAVE special Issue

Author

Kaynak, Mehmet, Blondy, Pierre, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), MINACOM (XLIM-MINACOM), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, GeneralLiterature_MISCELLANEOUS
Abstract

International audience; The International Journal of Microwave and Wireless Technology always welcomes free submissions by authors active in the microwave field. However, this issue also includes the invited manuscripts. This Special Issue of the Journal comprises expanded versions of selected papers from the MEMSWAVE Symposium, 2013. It is the first time in this issue that MEMSWAVE Symposium provides contribution to the International Journal of Microwave and Wireless Technology. MEMSWAVE Symposium is an exciting opportunity for RF- ...

Published
2014

19. Ultra-compact capacitively loaded evanescent half-mode SIW filters for LTE applications

Author

Kaynak, Mehmet, Blondy, Pierre, Stander, Tinus, Sinha, saurabh, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), MINACOM (XLIM-MINACOM), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), University of Pretoria (UPSpace), and University of Illinois System

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; Abstract This paper presents a novel miniaturized substrate integrated waveguide filter by combining both half-mode resonators and capacitive loading on a conventional two-layer printed circuit board (PCB) process. The resulting synthesis is successfully demonstrated in an long-term evolution application by means of a third-order filter of< 225 mm2 in size while featuring 2.3 dB insertion loss over a 5.5% fractional bandwidth at 3.7 GHz. Good first-iteration agreement between simulated and measured results, both in center frequency ...

Published
2014

20. International Journal of Microwave and Wireless Technologies

Author

Kaynak, Mehmet, Blondy, Pierre, figur, S. A, van raay, F, IHP Frankfurt, Innovations for High Performance Microelectronics (IHP), MINACOM (XLIM-MINACOM), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014
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21. Recognizing upper limb movements with wrist worn inertial sensors using k-means clustering classification.

Author

Biswas D, Cranny A, Gupta N, Maharatna K, Achner J, Klemke J, Jöbges M, and Ortmann S

Subjects
Acceleration, Activities of Daily Living, Adult, Aged, Algorithms, Biomechanical Phenomena, Cluster Analysis, Female, Healthy Volunteers, Humans, Linear Models, Male, Middle Aged, Monitoring, Ambulatory instrumentation, Monitoring, Ambulatory methods, Movement, Neurodegenerative Diseases physiopathology, Pattern Recognition, Automated, Support Vector Machine, Telemedicine, Wireless Technology, Wrist physiology, Young Adult, Arm physiology
Abstract

In this paper we present a methodology for recognizing three fundamental movements of the human forearm (extension, flexion and rotation) using pattern recognition applied to the data from a single wrist-worn, inertial sensor. We propose that this technique could be used as a clinical tool to assess rehabilitation progress in neurodegenerative pathologies such as stroke or cerebral palsy by tracking the number of times a patient performs specific arm movements (e.g. prescribed exercises) with their paretic arm throughout the day. We demonstrate this with healthy subjects and stroke patients in a simple proof of concept study in which these arm movements are detected during an archetypal activity of daily-living (ADL) - 'making-a-cup-of-tea'. Data is collected from a tri-axial accelerometer and a tri-axial gyroscope located proximal to the wrist. In a training phase, movements are initially performed in a controlled environment which are represented by a ranked set of 30 time-domain features. Using a sequential forward selection technique, for each set of feature combinations three clusters are formed using k-means clustering followed by 10 runs of 10-fold cross validation on the training data to determine the best feature combinations. For the testing phase, movements performed during the ADL are associated with each cluster label using a minimum distance classifier in a multi-dimensional feature space, comprised of the best ranked features, using Euclidean or Mahalanobis distance as the metric. Experiments were performed with four healthy subjects and four stroke survivors and our results show that the proposed methodology can detect the three movements performed during the ADL with an overall average accuracy of 88% using the accelerometer data and 83% using the gyroscope data across all healthy subjects and arm movement types. The average accuracy across all stroke survivors was 70% using accelerometer data and 66% using gyroscope data. We also use a Linear Discriminant Analysis (LDA) classifier and a Support Vector Machine (SVM) classifier in association with the same set of features to detect the three arm movements and compare the results to demonstrate the effectiveness of our proposed methodology., (Copyright © 2014 Elsevier B.V. All rights reserved.)

Published
2015
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