1. Comparing metal assisted chemical etching of N and P-type silicon nanostructures
- Author
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Hanna Ohlin, Thomas Frisk, Ilya Sychugov, and Ulrich Vogt
- Subjects
MACE ,Metal assisted chemical etching ,N-type ,P-type ,X-ray diffractive optics ,Zone plate ,Electronics ,TK7800-8360 ,Technology (General) ,T1-995 - Abstract
Metal assisted chemical etching is a promising method for fabricating high aspect ratio micro- and nanostructures in silicon. Previous results have suggested that P-type and N-type silicon etches with different degrees of anisotropy, questioning the use of P-type silicon for nanostructures. In this study, we compare processing X-ray zone plate nanostructures in N and P-type silicon through metal assisted chemical etching with a gold catalyst. Fabricated zone plates were cleaved and studied with a focus on resulting verticality, depth and porosity. Results show that for high aspect ratio nanostructures, both N and P-type silicon prove to be viable alternatives exhibiting different etch rates, but similarities regarding porosity and etch direction.
- Published
- 2023
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