1. Propriétés électriques des structures MIS sur InP passivé par un oxyde
- Author
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A. Mahdjoub, Y. Robach, and J. Joseph
- Subjects
Passivation ,Chemistry ,oxidation ,020209 energy ,Mineralogy ,02 engineering and technology ,Liquid medium ,semiconductor ,021001 nanoscience & nanotechnology ,InP In PO sub 3 sub 3 ,interface state density ,Indium phosphate ,indium compounds ,metal insulator semiconductor structures ,capacitance voltage characteristics ,State density ,MIS capacitors ,[PHYS.HIST]Physics [physics]/Physics archives ,III V semiconductors ,native oxide ,0202 electrical engineering, electronic engineering, information engineering ,Physical chemistry ,interface electron states ,passivation ,0210 nano-technology - Abstract
By oxidation of InP in liquid medium, condensed indium phosphate In(PO 3 ) 3 could be obtained. In a previous work the physicochemical properties of this compound were studied and it was shown that it could be a good candidate for the passivation of InP. In this work MIS capacitors have been elaborated using this native oxide, C(V) characteristics of these structures have been measured and analysed. From these results, it was inferred that the minimum of the interface state density is typically of 10 11 cm -2 eV -1 Par oxydation de l'InP en milieu liquide on peut obtenir le phosphate condense In(PO 3 ) 3 . L'etude des proprietes physicochimiques de ce compose a deja montre qu'il pouvait etre un bon candidat a la passivation de l'InP. Dans ce travail, des capacites MIS ont ete fabriquees en utilisant cet oxyde natif, et les caracteristiques C(V) de ces structures ont ete mesurees et analysees. Ces resultats montrent que le minimum de la densite d'etats d'interface est typiquement de 10 11 cm -2 eV -1
- Published
- 1989
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