88 results on '"Irokawa, Y."'
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2. Design and Fabrication of GaN High Power Rectifiers
3. Analysis of Deep Traps at Al2O3/n-GaN Interface using Photo-assisted C-V Measurement
4. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
5. Electrical activation characteristics of silicon-implanted GaN.
6. Impedance Analysis on Hydrogen Interaction with Pt-AlGaN/GaN Schottky Barrier Diodes
7. Hydrogen interaction with GaN metal–insulator–semiconductor diodes
8. Improving Drilling Performance in the Upper Cretaceous: A Case Study From Santos Basin, Brazil
9. Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures
10. Electrical Interface Structure of Schottky Junctions by π-conjugated Polymer/III-nitride Hetero Structure
11. Characterization of Al In GaN/GaN Heterointerface by HAADF-STEM and Electron Holography
12. Effects of surface states on hydrogen sensing performance of Pt‐GaN Schottky diodes
13. Implantation temperature dependence of Si activation in AlGaN
14. Activation characteristics of ion-implanted Si+ in AlGaN
15. GaN enhancement mode metal-oxide semiconductor field effect transistors
16. Electrical characteristics of GaN implanted with Si+ at elevated temperatures
17. Si[sup +] Ion Implantation into GaN at Cryogenic Temperatures
18. Si+ ion implanted MPS bulk GaN diodes
19. MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors
20. 2.6 A, 0.69 MW cm−2 single-chip bulk GaN p-i-n rectifier
21. Comparison of Interface State Density Characterization Methods for SiO[sub 2]/4H-SiC MOS Diodes
22. Reduction of Surface-Induced Current Collapse in AlGaN/GaN HFETs on Freestanding GaN Substrates
23. Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates
24. DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates
25. Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes
26. 160-A bulk GaN Schottky diode array
27. Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers
28. Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers
29. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
30. Inversion behavior in Sc2O3/GaN gated diodes
31. Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes
32. Charge pumping in Sc2O3∕GaN gated mos diodes
33. Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
34. Edge termination design and simulation for bulk GaN rectifiers
35. High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes
36. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface.
37. Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors.
38. Chapter 12 - Design and Fabrication of GaN High Power Rectifiers
39. RHEED-ISS study on the surface at high temperature
40. Auger eectron spectroscopy study of the system at high temperature
41. Surface segregation of zirconium in oxygen-processed system at high temperatures
42. Behavior of zirconium in the ZrOW(100) system at high temperature, studied by ISS, AES and work-function measurements
43. Si+ ion implanted MPS bulk GaN diodes
44. Lateral Schottky GaN Rectifiers Formed by Si+ Ion Implantation.
45. Design of junction termination structures for GaN Schottky power rectifiers
46. Effects of surface states on hydrogen sensing performance of Pt-GaN Schottky diodes.
47. Activation characteristics of ion-implanted Si+ in AlGaN.
48. Electrical characteristics of GaN implanted with Si+ at elevated temperatures.
49. MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors.
50. 2.6 A, 0.69 MW cm−2 single-chip bulk GaN p-i-n rectifier
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