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Your search keyword '"Izumisawa, Masaru"' showing total 5 results
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5 results on '"Izumisawa, Masaru"'

1. High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process

Author

Saito, Wataru, Omura, Ichiro, Aida, Satoshi, Koduki, Shigeo, Izumisawa, Masaru, Yoshioka, Hironori, and Ogura, Tsuneo

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Semiconductor preparation -- Methods, Silicon compounds -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time realizing low on-resistance below the theoretical Si limit. The results show the possibility of new Si power-MOSFET with a higher application voltage range.

Published
2005

2. Semisuperjunction MOSFETs: new design concept for lower on-resistance and softer reverse-recovery body diode

Author

Saito, Wataru, Omura, Ichiro, Aida, Satoshi, Koduki, Shigeo, Izumisawa, Masaru, and Ogura, Tsuneo

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Metal oxide semiconductor field effect transistors -- Structure, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

The MOSFET with the superjunction (SJ) structure offering remarkable advantages over the conventional SJ structure is proposed and demonstrated. The high-voltage power semi-SJ MOSFET is very effective for reduction of power dissipation due to low on-resistance and soft recovery body diode.

Published
2003

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