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A cantilever-based uncooled IR imager was developed utilizing a novel optical readout scheme based on inter-pixel interference. A series of small arrays (approximately 100 × 100 pixels) were fabricated using 8-in. silicon MEMS processes. The array design and process development will be discussed and initial uniformity and imaging results presented. Future challenges in developing a direct-view IR imager will be addressed.

We present a detailed system design and available technology choices for building a large scale ($>$ 100 qubits) ion trap quantum information processor (QIP). The system design is based on technologies that are within reach today, and utilizes single-instruction-on-multiple-data (SIMD) principles to re-use resources that cannot be duplicated easily. The system engineering principles adopted highlight various design tradeoffs in the QIP design and serve as a guideline to find design spaces for a much larger QIP.

Optoelectronic modules and multifiber optical connectors were successfully applied to intrasystem interconnection within a large telecommunication transmission terminal. The optoelectronic modules are 32-channel 850 nm vertical cavity surface emitting laser (VCSEL) and detector arrays packaged using multichip module technology system components include multimode silica optical fibers and silicon V-groove technology based multifiber optical connectors. The system architecture presented particularly difficult challenges for parallel optics because of complex cable assemblies required by the fan-out nature of the cables and the signal bifurcation needed to accomplish duplication, Nevertheless, the experiments completed demonstrate that parallel optics can dramatically increase the capacity of telecommunications equipment with no significant changes in system or physical architecture. The density of the optical modules and connectors clearly demonstrates that optical interconnection technology will be able to support the input/output (I/O) requirements of new generations of integrated circuit technology.

A parallel, 32-channel, high density (140 /spl mu/m pitch), 500 Mb/s NRZ, point-to-point, optical data link has been fabricated using existing GaAs IC, silicon optical bench (SiOB), and multichip module (MCM-D) technologies. The main components of the transmitter and the receiver modules are a GaAs-based vertical cavity surface emitting laser (VCSEL) array at 850 mn with its IC driver array chip and an integrated metal-semiconductor-metal (MSM) receiver (photodetector and signal processing circuits) array at 850 nm. The package module uses a modified 164 I/O JEDEC premolded plastic quad flat pack (PQFP) in combination with a polymer film integrated circuit (POLYFIC) chip carrier. The electrical input and output are 500 Mb/s NRZ binary signals. The optical I/O in both modules consists of a directly-connectorized (nonpigtail) fiber array block that plugs into the 32/spl times/1 optical fiber ribbon directly on one side and accepts 32 optical signals from the SEL array or delivers them to the MSM receiver array via a gold-coated 45/spl deg/ polished fiber array mirror. The MACII-32 ribbon cable is an enhanced version of the standard MACII connector ribbon cable. This paper characterizes key components of the optical data link, describes its package design, and discusses preliminary component and optical data link test results. >

We review the fabrication process of a recently introduced phase only MEMS based spatial light modulators for maskless lithography. A brief description of this device is presented. The physical properties of its structural layers and the difficulties encountered during its fabrication process are described in detail.

Summary form only given. It has been demonstrated that large-scale transparent optical switches can be built using micro-electro-mechanical systems (MEMS) technology. An added advantage of transparent switches is that the switching function is independent of data rate and data format. In this paper, we discuss a three-dimensional MEMS optical crossconnect (OXC) switch fabric, with a focus on the optical performance.

We have demonstrated an electroabsorption-modulated hybrid integrated wavelength selectable laser source comprised of a spot-size converted 1.55 /spl mu/m DFB laser array and a spot-size converted semiconductor optical amplifier/EA modulator, mounted on silicon and optically connected via silica-on-silicon waveguides. The InP components are fabricated using a novel dual-waveguide spot-size converter integration technique that produces low coupling losses and uses existing manufacturing techniques. The low chirp performance of this device makes it suitable for long-haul transmission at 2.5 Gbit/s using any of 16 50 GHz spaced channels.

A novel 6-GHz lightwave/microwave transceiver module has been demonstrated which combines AT&T's advanced lightwave packaging (ALP) technology with GE's monolithic microwave integrated circuit (MMIC) module technology. The optical transceiver module produced 11 dB of RF-to-RF gain over an octave bandwidth of 3-6 GHz. The ALP is miniaturized so that it may be integrated within a transmit, receive (T/R) module package or as a stand-alone small-size optical transceiver. >

We report drift-free two-axis tilting MEMS mirrors fabricated from single crystal silicon. These micromirrors survive 1000 G mechanical shocks and exhibit angular stability better than 4 millidegrees under simulated office vibrations. Two hermetically sealed mirror arrays were used to build a low-loss nonblocking 1000/spl times/1000-port optical cross-connect switch.

The first phase of OETC (OETC-1) produced a parallel, 32-channel, high density (140 mm pitch), 500 Mb/s NRZ, point to point, optical data link. This link has a 32 channel VCSEL array operating at 850 nm and a 32 channel MCM receiver array. The key packaging technologies include the silicon optical bench technology and a multichip module technology. The transmitter and receiver parts were directly connected (no pigtails) using MACII-32 connectors.

This paper discusses the present state of the art of components, systems, and application technology related to parallel optical data links (ODL) as demonstrated by the OptoElectronic Technology Consortium (OETC). Parallel ODL technology is poised for large volume commercialization despite some uncertainties in industrial standards and system applications. This is fueled by the demand for high-bandwidth to support the upcoming information age. To meet the need for low-cost, broadband digital multimedia services, parallel ODL technology faces the challenge of providing reasonable cost/performance ratios when compared with other established technologies. Responding to this challenge has required the integration of a number of state-of-the-art component technologies (e.g. VCSEL, monolithic integrated photoreceiver, MCM, GaAs IC, optical array connector and cable) with system designs and applications.

Summary form only given. A parallel, 32 channel, high density (140 /spl mu/m pitch) 500 Mbps/channel NRZ optical data link has been successfully fabricated using existing GaAs IC, silicon optical bench, and multichip module technologies. Packaging designs, its implementation, and link characterization will be discussed.

As optical system architectures have matured over the past ten years, the use of silicon optical bench (SiOB) technology for cost effective packaging of opto-electronic components has migrated from relatively simple laser and photodetector submounts to sophisticated hybrid integrated optical subsystems. Lucent Technologies Bell Laboratories has been developing SiOB technology for use as an integrated packaging platform for lasers, photodetectors, waveguides and passive optical components. In this paper we describe two integrated optical sub-assemblies using planar lightguide circuits (PLCs) as examples of transceivers and complex laser source modules. The assemblies integrate lasers, photodetectors, passive waveguide splitters, wavelength division multiplex (WDM) filters, etched fiber and ball lens attachment sites, turning mirrors, optical reversing elements, deposited metals, solder dams and solders for mechanical and electrical contacts onto a single silicon optical sub-assembly. The approach allows for low cost batch processing, assembly and testing of complex components using the silicon wafer as a carrier and the use of automated pick-and-place machines for assembly.

It is clear that WDM has arrived, that the trend is to more and more wavelengths, and that integrated optical components are going to be critical to future system developments. The opportunities and challenges for these devices will be discussed.

We will describe in this paper a technology to integrate all the optical functions on one single piecepart, the planar lightguide circuit (PLC), departing from the traditional approach of separately packaged transmitter (Tx) and receiver (Rx). The rationale is that the increase in complexity/cost incurred at wafer-scale processing is, in large volume (>100k/yr), greatly outweighed by the reduction in the final number of pieceparts/assembly cost, resulting in a net lowering of the overall cost of the optical network unit.

Summary form only given. In previous papers, we reported on waveguide amplifiers fabricated from Er/sup 3/+)-doped sodalime glass films on oxidized silicon wafers. In this work we report on waveguide amplifiers with a lower Er concentration and fabricated via an improved processing technique, which allows the lowest threshold of any waveguide amplifier reported to date.

This letter describes a 238/spl times/238 beam-steering optical cross connect constructed using surface micromachined mirrors. Its innovative optical configuration resulted in superior optical performance, achieving a mean fiber-to-fiber insertion loss of 1.33 dB and a maximum insertion loss for all 56 644 connections of 2 dB.

Dielectric charging, mechanical creep and fatigue of materials, stresses in thin films, sensitivity to mechanical vibrations and shock is but a partial list of issues that may arise on the road to reliable MEMS. Major electrical and mechanical phenomenon that may limit the lifetime or functionality of MEMS devices will be discussed along with the design rules, materials choices and reliability vs. functionality tradeoffs that are required for designing MEMS for high performance and reliability.

In summary, a multi-service node based on an optical MEMS crossconnect switch with 1.33 dB mean loss has been demonstrated. While a simple 16-wavelength, channel-equalizing add/drop multiplexer was demonstrated as a possible node configuration, a broad range of new functions can be implemented by connecting conventional and different optical components to the low-loss crossconnect switch.

A 72/spl times/72 wavelength-selective crossconnect switch, that is scalable to 1296/spl times/1296 with current technology, is presented. Silica-on-silicon wavelength multiplexers with integrated monitoring taps and a MEMS micromirror array were assembled in a hybrid 3D beam steering crossconnect having 20 dB insertion loss, 100 GHz channel spacing and 30 GHz passbands.