127 results on '"Jo, Minseok"'
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2. Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels
3. Materials and process aspect of cross-point RRAM (invited)
4. Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament
5. Clickable Object Detection Network for a Wide Range of Mobile Screen Resolutions
6. Data retention characteristics of MANOS-type flash memory device with different metal gates at various levels of charge injection
7. Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing
8. Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO 2nMOSFET
9. TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application.
10. Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness.
11. Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer
12. Development of a Semiempirical Compact Model for DC/AC Cell Operation of ${\rm HfO}_{\rm{x}}$-Based ReRAMs
13. New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High- $k$/IL Gate Dielectric
14. Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications
15. Cover Picture: Memristive switching behavior in Pr0.7 Ca0.3 MnO3 by incorporating an oxygen-deficient layer (Phys. Status Solidi RRL 10-11/2011)
16. Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer
17. Estimation of Interfacial Fixed Charge at Al2O3/SiO2 Using Slant-Etched Wafer for Solar Cell Application
18. Noise-Analysis-Based Model of Filamentary Switching ReRAM With $\hbox{ZrO}_{x}/\hbox{HfO}_{x}$ Stacks
19. Estimation of Interfacial Fixed Charge at Al2O3/SiO2Using Slant-Etched Wafer for Solar Cell Application
20. Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
21. New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory
22. TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application
23. Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes
24. Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect
25. Forming-Free CuC-Buffer Oxide Resistive Switching Behavior with Improved Resistance Ratio
26. Nonvolatile Memory Functionality of ZnO Nanowire Transistors Controlled by Mobile Protons
27. Organic Memory: Three‐Dimensional Integration of Organic Resistive Memory Devices (Adv. Mater. 44/2010)
28. Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
29. Improved switching characteristics of perovskite oxide‐based resistance random access memory by high‐pressure oxygen annealing at low temperature
30. Three‐Dimensional Integration of Organic Resistive Memory Devices
31. Novel cross-point resistive switching memory with self-formed schottky barrier
32. Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant
33. Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices
34. Organic Memory: Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices (Adv. Mater. 11/2010)
35. Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness
36. Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance
37. Effect of high pressure hydrogen annealing on silicon nanowire MOSFET devices with multi-channel wires
38. Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition
39. Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg
40. Hybrid Complementary Logic Circuits of One-Dimensional Nanomaterials with Adjustment of Operation Voltage
41. Nanoscale Logic Circuits: Hybrid Complementary Logic Circuits of One‐Dimensional Nanomaterials with Adjustment of Operation Voltage (Adv. Mater. 21/2009)
42. Effect of High-Pressure Oxygen Annealing on Electrical Characteristics of Metal–Alumina–Nitride–Oxide–Silicon-Type Flash Memory Devices
43. Gate voltage dependence on hot carrier degradation at an elevated temperature in a device with ultrathin silicon oxynitride
44. Charge loss behavior of manos-type flash memory cell with different levels of charge injection
45. Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure
46. Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection
47. Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall
48. Impact of oxygen incorporation at the Si3N4∕Al2O3 interface on retention characteristics for nonvolatile memory applications
49. Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient
50. Effect of Oxygen Postdeposition Annealing on Bias Temperature Instability of Hafnium Silicate MOSFET
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