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Your search keyword '"Jun, Ning Bao' showing total 4 results
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4 results on '"Jun, Ning Bao'

1. Improvement of RCA transistor using RTA annealing after the formation of interfacial oxide

Author

Chun, Zhang L., Yan, Jin Hai, Fei, Ye Hong, Zhi, Gao Yu, and Jun, Ning Bao; Xian, Mo Bang

Subjects
Bipolar transistors -- Electric properties, Circuit design -- Testing, Annealing -- Measurement, Circuit designer, Integrated circuit design, Business, Electronics, Electronics and electrical industries
Abstract

A RCA transistor with double-polysilicon structure is developed, in which an ultra-thin interfacial oxide layer is deliberately produced between polysilicon and silicon emitter. Good stability of the ultra-thin oxide is obtained by using rapid thermal annealing (RTA) method after the formation of RCA oxide.

Published
2002

2. Improvement of RCA transistor using RTA annealing after the formation of interfacial oxide

Author

Ning Bao Jun, Gao Yu Zhi, Jin Hai Yan, Ye Hong Fei, Zhang Li Chun, and Mo Bang Xian

Subjects
Materials science, Silicon, business.industry, Annealing (metallurgy), Interfacial oxide, Bipolar junction transistor, Transistor, Electrical engineering, chemistry.chemical_element, Electronic, Optical and Magnetic Materials, Hafnium, law.invention, chemistry, law, Optoelectronics, Thermal stability, Electrical and Electronic Engineering, business, Common emitter
Abstract

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 /spl times/ 8 /spl mu/m/sup 2/. The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively.

Published
2002
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4. Improvement of RCA Transistor Using RTA Annealing After the Formation of Interfacial Oxide.

Author

Zhang Li Chun, Jin Hai Yan, Ye Hong Fei, Gao Yu Zhi, Ning Bao Jun, and Mo Bang Xian

Subjects
TRANSISTORS, SILICON, BIPOLAR transistors
Abstract

Focuses on a study which described a polysilicon emitter RCA transistor, an ultra-thin interfacial oxide layer between polysilicon and silicon emitter. Discussion on silicon bipolar transistors; Description of device fabrication; Analysis of results.

Published
2002
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