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Unlike the single grating Czerny–Turner configuration spectrometers, a super-high spectral resolution optical spectrometer with zero coma aberration is first experimentally demonstrated by using a compound integrated diffraction grating module consisting of 44 high dispersion sub-gratings and a two-dimensional backside-illuminated charge-coupled device array photodetector. The demonstrated super-high resolution spectrometer gives 0.005 nm (5 pm) spectral resolution in ultra-violet range and 0.01 nm spectral resolution in the visible range, as well as a uniform efficiency of diffraction in a broad 200 nm to 1000 nm wavelength region. Our new zero-off-axis spectrometer configuration has the unique merit that enables it to be used for a wide range of spectral sensing and measurement applications.

As the key approach to enhance the efficient application of solar energy, solar selective absorbers have been extensively investigated in the past years. With great efforts contributed by scientists and engineers all around the world, new materials and excellent structures were achieved in solid progress to stimulate applications in broad fields. In this book, we will present an overview of both theory and experimental methods to fulfill the high-efficiency solar absorber devices. It begins with a historical description of the study and development for the spectrally selective solar absorber materials and structures based on the optical principles and methods in past decades. The optical properties of metals and dielectric materials are addressed to provide the background on how to realize high performance of the solar absorber devices applied in the solar energy field. In the following sections, different types of materials and structures, including the experimental methods, are discussed for practical construction and fabrication of the solar absorber devices, aiming at maximally harvest the solar energy, at the same time to suppress the heat-emission loss effectively. The optical principles and methods used to evaluate the performance of solar absorber devices with broad applications in different physical conditions are presented. The book will be suitable for graduate students in applied physics fields with valuables reference also for the researchers working actively in the solar energy fields.

In this work, we present a simple method to improve the thermoelectric performance of the RF sputtered bismuth telluride films by raising the power of deposition. The as-deposited samples synthesized under different powers were investigated and compared. It shows that the films prepared under relatively higher power conditions exhibit much higher electrical conductivity to result in a greater power factor accompanied with a minor drop in the Seebeck coefficients. A relationship is established between the improvement in thermoelectric performance and the decrease in crystallinity, which might also reduce the thermal conductivity. A maximum power factor of 5.65 &times, 10&minus, 4 W&middot, m&minus, 1&middot, K&minus, 2 at 470 K is obtained for the sample deposited under 50 W with its Seebeck coefficient being &minus, 105 &mu, V/K. The temperature-dependent behaviors of the samples are also looked into and discussed. This work might offer an in-situ and cost-effective approach to improve the performance of thermoelectric materials.

A typical 6-layered metal-dielectric film structure of SiO2 (57.3 nm)/Cr (2.9 nm)/SiO2 (72.9 nm)/Cr (6.6 nm)/SiO2 (57.6 nm)/Cu (>100.0 nm) was designed and fabricated by magnetron sputtering. It showed a high solar absorption of about 95.8% in the wavelength range of 250–2000 nm, a low thermal emittance of about 0.104 at 600 K and good thermal stability at 673 K after annealing for 12 h in vacuum condition. The angle-dependent reflectance spectra indicated that the proposed 6-layered film structure has a great angular tolerance even when the incident angle increases to 50°. All of the excellent spectral properties and good thermal stability demonstrate the 6- layered planar film structure will be suitable for practical applications of solar-thermal conversion.

In this work, a tunable broadband near-infrared light absorber was designed and fabricated with a simple and lithography free approach by introducing an ultrathin phase-change material Ge 2 Sb 2 Te 5 (GST) layer into the metal–dielectric multilayered film structure with the structure parameters as that: SiO 2 (72.7 nm)/Ge 2 Sb 2 Te 5 (6.0 nm)/SiO 2 (70.2 nm)/Cu (>100.0 nm). The film structure exhibits a modulation depth of ∼ 72.6% and an extinction ratio of ∼ 8.8 dB at the wavelength of 1410 nm. The high light absorption (95%) of the proposed film structure at the wavelength of 450 nm in both of the amorphous and crystalline phase of GST, indicates that the intensity of the reflectance in the infrared region can be rapidly tuned by the blue laser pulses. The proposed planar layered film structure with layer thickness as the only controllable parameter and large reflectivity tuning range shows the potential for practical applications in near-infrared light modulation and absorption.

Light transmission at the Au/air interface was measured for wedge-shaped Au film samples. Light refraction continuously changing its sign from positive to negative at the Au/air interface in the spectrum range of 470–700 nm was observed with a zero refraction occurred at about 525 nm. The results indicate that the effective refraction index n e of samples are not correlated with wedge angles, implying that n e can be considered an intrinsic characteristic of the metal material. The positive and negative refractions observed in the experiment can be attributed to the dispersive feature of the dielectric function of Au with qualitative explanation according to the mechanisms of electron transition and the boundary conditions restricted at the interface.

In this work, the two-dimensional profile of the light transmission through a prism-like metallic film sample of Au was measured at a wavelength of 632.8 nm in the visible intraband transition region to verify that, beyond the possible mechanisms of overcoming the diffraction limit, a strongly nonuniform optical absorption path length of the light traveling in the metal could induce a lensing effect, thereby narrowing the image of an object. A set of prism-like Au samples with different angles was prepared and experimentally investigated. Due to the nonuniform paths of the light traveling in the Au samples, lens-effect-like phenomena were clearly observed that reduced the imaged size of the beam spot with decreasing light intensity. The experimental measurements presented in the work may provide new insight to better understand the light propagation behavior at a metal/dielectric interface.

Optical spectrometers play a key role in acquiring rich photonic information in both scientific research and a wide variety of applications. In this work, we present a new spectrometer with an ultrahigh resolution of better than 0.012 nm/pixel in the 170–600 nm spectral region using a grating-integrated module that consists of 19 subgratings without any moving parts. By using two-dimensional (2D) backsideilluminated complementary metal-oxide-semiconductor (BSI-CMOS) array detector technology with 2048 × 2048 pixels, a high data acquisition speed of approximately 25 spectra per second is achieved. The physical photon-sensing size of the detector along the one-dimensional wavelength direction is enhanced by a factor of 19 to approximately 428 mm, or 38912 pixels, to satisfy the requirement of seamless connection between two neighboring subspectral regions without any missing wavelengths throughout the entire spectral region. As tested with a mercury lamp, the system has advanced performance capabilities characterized by the highest k parameter reported to date, being approximately 3.58 × 104, where k = (working wavelength region)/(pixel resolution). Data calibration and analysis as well as a method of reducing background noise more efficiently are also discussed. The results presented in this work will stimulate further research on precision spectrometers based on advanced BSI-CMOS array detectors in the future.

Optical spectrometers play an important role in modern scientific research. In this work, we present a two-channel spectrometer with a pixel resolution of better than 0.1 nm/pixel in the wavelength range of 200 to 950 nm and an acquisition speed of approximately 25 spectra per second. The spectrometer reaches a high k factor which characterizes the spectral performance of the spectrometer as k = (working wavelength region)/(pixel resolution) = 7500. Instead of using mechanical moving parts in traditional designs, the spectrometer consists of 8 integrated sub-gratings for diffracting and imaging two sets of 4-folded spectra on the upper and lower parts, respectively, of the focal plane of a two-dimensional backside-illuminated complementary metal-oxide-semiconductor (BSI-CMOS) array detector, which shows a high peak quantum efficiency of approximately 90% at 400 nm. In addition to the advantage of being cost-effective, the compact design of the spectrometer makes it advantageous for applications in which it is desirable to use the same two-dimensional array detector to simultaneously measure multiple spectra under precisely the same working conditions to reduce environmental effects. The performance of the finished spectrometer is tested and confirmed with an Hg-Ar lamp.

An efficient noise-reduction method with a more accurate wavelength calibration procedure is proposed for a spectrometer system to achieve a higher signal-to-noise ratio and spectral resolution. By using a two-dimensional (2D) array detector with an integrated grating composed of 10 sub-gratings, the system has a merit of high data acquisition speed to satisfy the condition in which in-situ spectral data analysis is critically required. The noise level has been effectively reduced down to approximately 25% of the previous level. The spectral curvature effect due to imperfection of the optical system is also analyzed and significantly reduced using the spectral calibration procedure to achieve higher resolution.

In this work, 4-layered SiO2/Bi2Te3/SiO2/Cu film structures were designed and fabricated and the optical properties investigated in the wavelength region of 250–1200 nm for their promising applications for direct solar-thermal-electric conversion. A typical 4-layered film sample with the structure SiO2 (66.6 nm)/Bi2Te3 (7.0 nm)/SiO2 (67.0 nm)/Cu (>100.0 nm) was deposited on a Si or K9-glass substrate by magnetron sputtering. The experimental results agree well with the simulated ones showing an average optical absorption of 96.5%, except in the shorter wavelength region, 250–500 nm, which demonstrates the superior absorption property of the 4-layered film due to the randomly rough surface of the Cu layer resulting from the higher deposition power. The high reflectance of the film structure in the long wavelength region of 2–20 μm will result in a low thermal emittance, 0.064 at 600 K. The simpler 4-layered structure with the thermoelectric Bi2Te3 used as the absorption layer may provide a straightforward way to obtain solar-thermal-electric conversion more efficiently through future study.

To improve the optical absorptance of a solar selective absorber over a wide wavelength range, an eight-layered metal-dielectric film structure was designed by the transfer matrix method and fabricated with the magnetron sputtering method. The experimental results showed that the multilayered film structure yields a high solar absorptance of 98.3% with excellent spectral selectivity over a wide angular range in the solar radiation region of 250–2000 nm, a total hemispherical emittance of 0.12 at 400 K, and nearly unchanged reflectance after heat treatment at 673 K for 48 h in vacuum, indicating the high efficiency of the photo-to-thermal conversion achieved for the sample to have the potential being practically applied in many fields.

The optical properties and thermal stability of a 6-layered metal/dielectric film structure are investigated in this work. A high optical absorption average of98% is achieved in the broad spectral range of 250-1200 nm with experiment results, in good agreement with our simulated results. The samples have a typical layered structure of: SiO(2)(57.3 nm)/Ti(5.7 nm)/SiO(2) (67.1 nm)/Ti(11.6 nm)/SiO(2)(51.4 nm)/Cu(100 nm), deposited on optically polished Si or K9-glass substrates by magnetron sputtering. The sample of the 6-layered metal/dielectric film structure has an AM1.5G solar absorptance of 95.5% with the features of low thermal emittance of 0.136 at 700K and good thermal stability, and will be potentially suitable for practical application in high-efficiency solar absorber devices in many fields.

A solar selective absorber with a multilayered SiO2 (87.0 nm)/Cr (8.3 nm)/SiO2 (96.3 nm) film structure was designed and fabricated by magnetron sputtering on a surface-roughened copper (Cu) substrate. The proposed structure can enhance solar absorption by combining both the typical solar absorption designs of the textured surface and metal–dielectric multilayer film structure. The measured solar absorptance is about 94%, which yields an enhancement of about 2% accompanied by a slightly higher thermal emittance than that observed for the surface-smoothed structure. The increasing thermal emittance of the surface-roughened film structure is expected to markedly cancel the advantage of absorptance enhancement as the temperature increases to 600 K, implying that the proposed film structure functions more efficiently at low or intermediate temperatures (

In this work, optical constants of direct current (DC) and radio frequency (RF) co-sputtered Ti-SiO2 nanocomposite thin films were investigated and tuned by controlling the deposition power of Ti in the SiO2 host matrix. X-ray photoelectron spectroscopy (XPS) results confirmed that the metallic Ti was completely oxidized into different titanium oxide states while the Si4+ state was reduced to the Si2+ or Si0 state by observing the Ti 2p, O 1s and Si 2p line shapes changing under different deposition conditions. The optical constants of the composites were characterized with a spectroscopic ellipsometer (SE) and reduced by using the modified harmonic oscillator approximation (HOA) model. The results show that the metal-dielectric nanocomposite will have an advantage over natural materials because its optical properties of n and k can be properly tuned by adjusting the concentration of Ti in the Ti-SiO2 nanocomposites, thus satisfying the requirements of photonic device design and applications in broad spectral regions.