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A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results. [ABSTRACT FROM AUTHOR]

A tandem combination of a uniform gain broad-area semiconductor laser and a (lateral) periodic gain section displays a stable, near-diffraction-limited single-lobed far-field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60-μm-wide apertures provided that the broad-area section is sufficiently long. [ABSTRACT FROM AUTHOR]

We consider the fabrication of high-quality interferogram-type diffractive optical elements with conventional photolithographic techniques and compare the results with those achievable with electron-beam lithography. The fringes associated with the phase transfer function of the binary phase holographic interferogram are approximated with rectangles, which can be realized at submicron accuracy using a pattern generator and step-and-repeat camera. The effects of the rectangle quantization are analyzed both numerically and experimentally with the aid of diffraction patterns produced by simple focusing elements. Both resolution and diffraction efficiency of the best holograms approach their theoretical values.