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1. Measurement of the crystallization and phase transition of niobium dioxide thin-films using a tube furnace optical transmission system

2. An antibody to IL-1 receptor 7 protects mice from LPS-induced tissue and systemic inflammation

3. Optimization of the position of TaOx:N-based barrier layer in TaOx RRAM devices

4. Material to system-level benchmarking of CMOS-integrated RRAM with ultra-fast switching for low power on-chip learning

5. Fcγ-Receptor-Independent Controlled Activation of CD40 Canonical Signaling by Novel Therapeutic Antibodies for Cancer Therapy

6. A Generalized Workflow for Creating Machine Learning-Powered Compact Models for Multi-State Devices

28. Fcγ-receptor-independent controlled activation of CD40 canonical signaling by novel therapeutic antibodies for cancer therapy

30. Investigation of ReRAM Variability on Flow-Based Edge Detection Computing Using HfO2-Based ReRAM Arrays

31. Stochasticity and robustness in spiking neural networks

34. Towards Synaptic Behavior of Nanoscale ReRAM Devices for Neuromorphic Computing Applications

35. Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform

36. Threshold switching stabilization of NbO2 films via nanoscale devices

37. In-memory Computation of Error-Correcting Codes Using a Reconfigurable HfOx ReRAM 1T1R Array

38. Comparison of Radiation Effects in Custom and Commercially Fabricated Resistive Memory Devices

39. Structural Correlation of Ferroelectric Behavior in Mixed Hafnia-Zirconia High-k Dielectrics for FeRAM and NCFET Applications

40. Electrical and structural properties of binary Ga–Sb phase change memory alloys

41. Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State

42. Design Limits of In-Memory Computing: Beyond the Crossbar

43. Robust RRAM-based In-Memory Computing in Light of Model Stability

44. Impact of Switching Variability of 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices on Distinct Level Operations

45. Impact of Atomic Layer Deposition Co-Reactant Pulse Time on 65nm CMOS Integrated Hafnium Dioxide-based Nanoscale RRAM Devices

46. Simulation of Temporal Correlation Detection using HfO2-Based ReRAM Arrays

47. Accurate Inference with Inaccurate RRAM Devices: Statistical Data, Model Transfer, and On-line Adaptation

48. (Invited) Materials and Processes for Superconducting Qubits and Superconducting Electronic Circuits on 300mm Wafers

49. Crystallization Properties of Al-Sb Alloys for Phase Change Memory Applications

50. Design Considerations for Memristive Crossbar Physical Unclonable Functions

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