28 results on '"Kawahara, Koutarou"'
Search Results
2. Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD
3. Superior Switching Characteristics of SiC-MOSFET Embedding SBD
4. Quantitative comparison between Z½ center and carbon vacancy in 4H-SiC.
5. Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET
6. Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs
7. Analytical model for reduction of deep levels in SiC by thermal oxidation.
8. Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC.
9. Deep levels induced by reactive ion etching in n- and p-type 4H–SiC.
10. Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC.
11. The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
12. 6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module
13. SiC中の深い準位の解析とキャリア寿命増大に向けた準位低減法の確立
14. Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy
15. Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence
16. Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations
17. Junction technology in SiC for high-voltage power devices
18. Deep Levels Generated by Thermal Oxidation in n-Type 4H-SiC
19. Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
20. Deep levels generated by thermal oxidation in p-type 4H-SiC
21. Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
22. Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model
23. Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
24. Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
25. Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC
26. Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC
27. Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy
28. Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.