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Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance.
- Source :
-
Applied Physics Letters . 3/18/2013, Vol. 102 Issue 11, p112106. 4p. 1 Diagram, 5 Graphs. - Publication Year :
- 2013
-
Abstract
- The Z1/2 center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z1/2 center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z1/2 defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (VC) determined by electron paramagnetic resonance, suggesting that the Z1/2 deep level originates from VC. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 102
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 86256978
- Full Text :
- https://doi.org/10.1063/1.4796141