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2. Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA

Author

Nergui, Delgermaa, Brumbach, Zachary R., Ildefonso, Adrian, Teng, Jeffrey W., Rao, Sunil G., Ringel, Brett L., Khachatrian, Ani, McMorrow, Dale, and Cressler, John D.

Abstract

Three third-order digital modulation schemes, rectangular 8-quadrature amplitude modulation (8-QAM), 8-phase shift keying (8-PSK), and star 8-QAM are compared for RF receiver-level single-event upset (SEU) sensitivity using laser pulses to strike the low-noise amplifier (LNA). Star 8-QAM had significantly better SEU resilience than 8-PSK and rectangular 8-QAM, suggesting that the choice of the constellation mapping could be effective for mitigating SEUs due to single-event transients (SETs) in the LNAs of RF receivers.

Published
2024
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3. Single-Event Transient Study of Ga₂O₃ Rectifiers

Author

Khachatrian, Ani, Pearton, Stephen J., Ren, Fan, Ildefonso, Adrian, Hales, Joel, and McMorrow, Dale

Abstract

Single-event effects (SEEs) studies are carried out on gallium oxide (Ga2O3) vertical rectifiers using ultrafast laser pulses. Two-photon absorption (TPA) technique at 350 nm laser wavelength is used to determine how the device transient response changes with deposited charge, bias, and the presence of defects. Pulsed-laser single-event measurements on Ga2O3 devices show that increased reverse bias and growth-related defects lead to enhanced single-event transients (SETs).

Published
2024
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6. SET-Induced Dropout and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs

Author

Teng, Jeffrey W., Mensah, Yaw A., Brumbach, Zachary R., Ildefonso, Adrian, Khachatrian, Ani, McMorrow, Dale, and Cressler, John D.

Abstract

Radio frequency (RF) communications systems in space flight are subject to single-event upsets (SEUs) due to dropout of the local oscillator (LO) during a single-event transient (SET), named here as single-event dropout (SEDO). If the duration of the SEDO is substantial, it inevitably compromises data. To help alleviate SEUs due to SEDO, the present work compares the dropout dynamics and recovery times of two types of RF $\boldsymbol {LC}$ oscillators with matched performance: the cross-coupled and the differential-Colpitts. The SEDO responses of both oscillators were tested using a pulsed laser to deposit charge via a two-photon absorption (TPA) process. For matched electrical performance and laser excitation conditions, the Colpitts oscillator demonstrated $14\times $ faster recovery. This improved response was examined using a hybridized circuit/technology computer-aided design (TCAD) simulation approach, and it was determined that a lower impedance at the bases of critical oscillating transistors naturally reduces the SEDO sensitivity for Colpitts oscillators. While cross-coupled oscillators are widely used, the present work demonstrates that Colpitts oscillators should instead be considered in frequency synthesizers to mitigate SEUs due to SEDO in oscillators.

Published
2024
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7. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier

Author

Nergui, Delgermaa, Teng, Jeffrey W., Brumbach, Zachary R., Ildefonso, Adrian, Rao, Sunil G., Khachatrian, Ani, McMorrow, Dale, and Cressler, John D.

Abstract

Standard digital modulation schemes are compared for receiver-level single-event upset (SEU) sensitivity. Single-event transients (SETs) on the wideband silicon–germanium (SiGe) low-noise amplifier (LNA) carrying on–off keying (OOK), binary phase-shift keying (BPSK), and frequency-shift keying (2-FSK) modulated data were induced using laser pulses. Both the modulation scheme and its detection method had a significant impact on the SEU sensitivity of the receiver. The SET sensitivity and noise sensitivity of the modulation schemes and demodulation techniques were correlated. Therefore, designing a receiver to be more robust to noise inherently makes it more robust to SETs. For space missions that anticipate a high flux of radiation, taking SETs into account when choosing the radio frequency (RF) modulation scheme and the demodulation method may be important to avoid underestimating the total bit-error rate (BER) when other system trade-offs are compared against the system BER.

Published
2024
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8. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

Author

Brumbach, Zachary R., Nergui, Delgermaa, Teng, Jeffrey W., Mensah, Yaw A., Sam, Delwyn G., Ildefonso, Adrian, Khachatrian, Ani, McMorrow, Dale, and Cressler, John D.

Abstract

A comparison of laser-induced single-event transients (SETs) in silicon-germanium heterojunction bipolar transistor (SiGe HBT) variants designed for high-speed (HS) applications and high-breakdown (HB) applications is presented. A significantly lower amplitude SET response at low laser pulse energies was observed in the HS device compared to the HB device. At high laser pulse energies, however, the transient amplitudes converged and produced a nearly identical response. A 3-D technology computer-aided design (TCAD) model of a SiGe HBT was used to understand the differences between the observed SET responses. During an SET produced by a low laser pulse energy, the mean electric field in the collector-base (CB) junction of a simulated HB device is shown to have a greater magnitude across the depletion region compared to that of its HS counterpart. Motivated by the proportional relationship between drift current and CB junction electric field, a greater breakdown voltage device produced a larger SET response. During an SET produced by a high laser pulse energy, the charge from the SET exceeded the collector doping in both the HS and HB SiGe HBT. This creates a conductive path to the output terminal, removing the dependence of collector doping on SET amplitude. The results of this study should help inform design choices of which device breakdown variant should be used in a given circuit if SETs are a major consideration for the application.

Published
2024
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9. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 2: Accurately Determining Laser-Equivalent LET

Author

Hales, Joel M., Ildefonso, Adrian, Khachatrian, Ani, Allen, Gregory R., and McMorrow, Dale

Abstract

An accessible approach for estimating the laser-equivalent linear energy transfer (LET $_{\mathrm {L}}$ ) for any pulsed-laser single-event effect (PL SEE) testing condition is developed and validated. This approach satisfies one of the three criteria required for laser testing to serve as a predictive surrogate for heavy-ion testing. By using easily interpretable equations and identifying the relevant laser, materials, and device parameters, the LETL and its uncertainty ( $\Delta $ LET $_{\mathrm {L}}$ ) can be accurately estimated. The approach is validated by observing agreement between experimentally acquired and LETL-calculated collected charge (CC) across a variety of laser testing geometries and for multiple devices with different sensitive depths. Given the ubiquitous use of the 1064 nm wavelength for laser testing, additional analyses are devoted to understanding the contributions to the LETL. The sensitivity of the LETL to its input parameters and their error contributions to $\Delta $ LETL are also considered. By employing this calculational approach, multiple testing conditions are found to satisfy the three criteria for predictive testing. Software that can facilitate calculations of LETL and other laser-generated quantities would benefit the radiation effects community, and efforts are currently underway toward this goal.

Published
2024
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10. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 1: Metrics for Assessing Response Agreement

Author

Ildefonso, Adrian, Hales, Joel M., Khachatrian, Ani, Allen, Gregory R., and McMorrow, Dale

Abstract

A series of distance metrics to quantitatively assess the level agreement between laser- and ion-induced single-event effects are presented. Historically, this agreement has been assessed by visual inspection. While traditionally effective, this approach can lead to misleading comparisons and erroneous conclusions. To enable quantitative comparisons for response agreement, a more objective approach is required. The present work defines and demonstrates the use of five distinct distance metrics to quantitatively assess the level of single-event effect (SEE) response agreement. These metrics correspond to each of the five categories in which most of the published SEE work can be sorted. Various applications of these metrics are shown, including the objective correlation of laser pulse energy (PE) and ion linear energy transfer (LET). While demonstrated with laser and ion data, this approach can be applied to other surrogates for heavy-ion testing and may be used to validate results obtained from potential predictive surrogate testing techniques.

Published
2024
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18. (Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga2O3

Author

Xia, Xinyi, primary, Li, Jian-Sian, additional, Sharma, Ribhu, additional, Ren, Fan, additional, Rasel, Md Abu Jafar, additional, Stepanoff, Sergei, additional, Al-Mamun, Nahid, additional, Haque, Amanul, additional, Wolfe, Douglas, additional, Modak, Sushrut, additional, Chernyak, Leonid, additional, Law, Mark, additional, Khachatrian, Ani, additional, and Pearton, Stephen J, additional

Published
2022
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20. Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3

Author

Xia, Xinyi, primary, Li, Jian-Sian, additional, Sharma, Ribhu, additional, Ren, Fan, additional, Rasel, Md Abu Jafar, additional, Stepanoff, Sergei, additional, Al-Mamun, Nahid, additional, Haque, Aman, additional, Wolfe, Douglas E., additional, Modak, Sushrut, additional, Chernyak, Leonid, additional, Law, Mark E., additional, Khachatrian, Ani, additional, and Pearton, S. J., additional

Published
2022
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28. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach

Author

Hales, Joel M., Ildefonso, Adrian, Buchner, Stephen P, Khachatrian, Ani, Allen, Greg, and McMorrow, Dale

Abstract

A recently mymargin developed pulsed-laser (PL) testing approach, which uses a quasi-Bessel beam (QBB) to better emulate a heavy-ion charge profile, is employed to predict the heavy-ion generated single-event transient (SET) response in an LM124 operational amplifier. The device is well suited for evaluating SET prediction since it consists of many transistors, each of which exhibits complicated transient features with strong spatial dependencies. Two photodiodes are first employed to ensure the necessary conditions for predictive testing are in place. The QBB is then adjusted to the desired laser-equivalent LET to test the entire LM124 chip. An SET feature-reduction approach is used to analyze the complex transient features measured. Subsequently, broadbeam heavy-ion data are acquired and analyzed, and the transient features are reproduced remarkably well with the existing QBB data. Additionally, a strong agreement is found for the worst-case transients generated by the two sources. Importantly, since the laser-equivalent LET is calculated without fitting or adjustable parameters, the QBB is capable of predicting ion-induced SET response in a complex device.

Published
2023
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30. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Author

Ryder, Kaitlyn L., primary, Ryder, Landen D., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Zhang, En Xia, additional, LaLumondiere, Stephen D., additional, Monahan, Daniele M., additional, Bonsall, Jeremy P., additional, Khachatrian, Ani, additional, Buchner, Stephen P., additional, McMorrow, Dale, additional, Hales, Joel M., additional, Zhao, Yuanfu, additional, Wang, Liang, additional, Wang, Chuanmin, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, and Reed, Robert A., additional

Published
2021
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33. Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

Author

Tzintzarov, George N., primary, Ildefonso, Adrian, additional, Teng, Jeffrey W., additional, Frounchi, Milad, additional, Djikeng, Albert, additional, Iyengar, Prahlad, additional, Goley, Patrick S., additional, Khachatrian, Ani, additional, Hales, Joel, additional, Bahr, Ryan, additional, Buchner, Stephen P., additional, Mcmorrow, Dale, additional, and Cressler, John D., additional

Published
2021
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34. Kinetic model of C/H/N/O emissions in laser-induced breakdown spectroscopy of organic compounds

Author

Dagdigian, Paul J., Khachatrian, Ani, and Babushok, Valeri I.

Subjects
Laser spectroscopy -- Usage, Laser spectroscopy -- Methods, Optics -- Research, Optics -- Methods, Astronomy, Physics
Abstract

A kinetic model to predict the relative intensities of the atomic C/H/N/O emission lines in laser-induced breakdown spectroscopy (LIBS) has been developed for organic compounds. The model includes a comprehensive set of chemical processes involving both neutral and ionic chemistry and physical excitation and de-excitation of atomic levels affecting the neutral, ionic, and excited-state species concentrations. The relative excited-state atom concentrations predicted by this modeling are compared with those derived from the observed LIBS intensities for 355 nm ns laser irradiation of residues of two organic compounds on aluminum substrate. The model reasonably predicts the relative excited-state concentrations, as well as their time profiles. Comparison of measured and computed concentrations has also allowed an estimation of the degree of air entrainment. [c] 2010 Optical Society of America OCIS codes: 300.6365, 000.1570, 350.5400.

Published
2010

35. Laser-induced breakdown spectroscopy with laser irradiation resonant with vibrational transitions

Author

Khachatrian, Ani and Dagdigian, Paul J.

Subjects
Laser spectroscopy -- Methods, Laser spectroscopy -- Usage, Optics -- Research, Optics -- Methods, Astronomy, Physics
Abstract

An investigation of laser-induced breakdown spectroscopy (LIBS) of polymers, both in bulk form and spin coated on Si wafers, with laser irradiation in the mid-infrared spectral region is presented. Of particular interest is whether the LIBS signals are enhanced when the laser wavelength is resonant with a fundamental vibrational transition of the polymer. Significant increases in the LIBS signals were observed for irradiation on hydride stretch fundamental transitions, and the magnitude of the enhancement showed a strong dependence on the mode excited. The role of the substrate was investigated by comparison of results for bulk and spin-coated samples. The polymers investigated were Nylon 12 and poly(vinyl alcohol-co-ethylene). [c] 2009 Optical Society of America OCIS codes: 300.6365, 300.2140, 300.6340.

Published
2010

36. Simulation of Pulsed Laser-Induced Testing in Microelectronic Devices

Author

Ryder, Landen D., primary, Ryder, Kaitlyn L., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Khachatrian, Ani, additional, Buchner, Steven P., additional, McMorrow, Dale, additional, Hales, Joel M., additional, Zhao, Yuanfu, additional, Wang, Liang, additional, Wang, Chuanmin, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, and Reed, Robert A., additional

Published
2021
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37. Single-Event Effect Performance of a Commercial ReRAM

Author

Chen, Dakai, Kim, Hak S, Phan, Anthony, Wilcox, Edward, LaBel, Kenneth, Buchner, Stephen, Khachatrian, Ani, and Roche, Nicolas

Subjects
Electronics And Electrical Engineering
Abstract

We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFI.

Published
2014

38. Radiation Effects of Commercial Resistive Random Access Memories

Author

Chen, Dakai, LaBel, Kenneth A, Berg, Melanie, Wilcox, Edward, Kim, Hak, Phan, Anthony, Figueiredo, Marco, Buchner, Stephen, Khachatrian, Ani, and Roche, Nicolas

Subjects
Electronics And Electrical Engineering
Abstract

We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

Published
2014

39. Single-Event Effect Response of a Commercial ReRAM

Author

Chen, Dakai, Label, Kenneth A, Kim, Hak, Phan, Anthony, Wilcox, Edward, Buchner, Stephen, Khachatrian, Ani, and Roche, Nicolas

Subjects
Electronics And Electrical Engineering
Abstract

We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier.

Published
2014

42. Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode

Author

Ryder, Kaitlyn L., primary, Zhao, Yuanfu, additional, Wang, Liang, additional, Wang, Chuanmin, additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Weiss, Sharon M., additional, Reed, Robert A., additional, Ryder, Landen D., additional, Sternberg, Andrew L., additional, Kozub, John A., additional, Zhang, En Xia, additional, Khachatrian, Ani, additional, Buchner, Steven P., additional, Mcmorrow, Dale P., additional, and Hales, Joel M., additional

Published
2020
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44. Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

Author

Tzintzarov, George N., primary, Buchner, Stephen P., additional, McMorrow, Dale, additional, Warner, Jeffrey H., additional, Kaynak, Mehmet, additional, Zimmermann, Lars, additional, Cressler, John D., additional, Ildefonso, Adrian, additional, Goley, Patrick S., additional, Frounchi, Milad, additional, Nergui, Delgermaa, additional, Rao, Sunil G., additional, Teng, Jeffrey, additional, Campbell, Jacob, additional, and Khachatrian, Ani, additional

Published
2020
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45. Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

Author

Ildefonso, Adrian, primary, Warner, Jeffrey H., additional, Cressler, John D., additional, Tzintzarov, George N., additional, Nergui, Delgermaa, additional, Omprakash, Anup P., additional, Goley, Patrick S., additional, Hales, Joel M., additional, Khachatrian, Ani, additional, Buchner, Stephen P., additional, and McMorrow, Dale, additional

Published
2020
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47. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs

Author

Lourenco, Nelson E., Fleetwood, Zachary E., Ildefonso, Adrian, Wachter, Mason T., Roche, Nicolas J.-H., Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Warner, Jeffrey H., Paki, Pauline, Raman, Ashok, Cressler, John D., Itsuji, Hiroaki, Kobayashi, Daisuke, and Hirose, Kazuyuki

Subjects
Nuclear and High Energy Physics, Materials science, Heterojunction bipolar transistor, single-event transient (SET), 02 engineering and technology, silicongermanium technology, BiCMOS, 01 natural sciences, SiGe HBT, chemistry.chemical_compound, single-event effects (SEE), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Transient response, Electrical and Electronic Engineering, Scaling, Common emitter, 010308 nuclear & particles physics, business.industry, hardening, 020208 electrical & electronic engineering, Doping, Charge collection, Electrical engineering, semiconductor process scaling, NanoTCAD, Silicon-germanium, radiation, technology scaling, Nuclear Energy and Engineering, chemistry, Optoelectronics, Transient (oscillation), two-photon absorption experiments, business
Abstract

著者人数: 15名, Accepted: 2016-11-08, 資料番号: SA1160320000

Published
2017

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