267 results on '"Khachatrian, Ani"'
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2. Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA
3. Single-Event Transient Study of Ga₂O₃ Rectifiers
4. The Propagation of Extended SET Tails in RF Amplifiers Using 45-nm CMOS on PDSOI
5. Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
6. SET-Induced Dropout and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs
7. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier
8. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
9. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 2: Accurately Determining Laser-Equivalent LET
10. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 1: Metrics for Assessing Response Agreement
11. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response – Part 1: Metrics for Assessing Response Agreement
12. SET-Induced Drop-out and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs
13. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response – Part 2: Accurately Determining Laser-Equivalent LET
14. Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics
15. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
16. The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs
17. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low Noise Amplifier
18. (Invited) Radiation Damage in the Ultra Wide Bandgap Semiconductor Ga2O3
19. Radiation Hardened Millimeter-Wave Receiver Implemented in 90-nm, SiGe HBT Technology
20. Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3
21. SET Characterization of a High and Low Side Gate Driver (RIC7S113) using Pulsed Laser and Heavy Ion Testing
22. Using Machine Learning to Mitigate Single-Event Upsets in RF Circuits and Systems
23. Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs
24. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
25. Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects
26. (Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC
27. Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics
28. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
29. Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3.
30. Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
31. Mapping the Spatial Dependence of Charge-Collection Efficiency in Semiconductor Devices Using Pulsed-Laser Testing
32. Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors
33. Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption
34. Kinetic model of C/H/N/O emissions in laser-induced breakdown spectroscopy of organic compounds
35. Laser-induced breakdown spectroscopy with laser irradiation resonant with vibrational transitions
36. Simulation of Pulsed Laser-Induced Testing in Microelectronic Devices
37. Single-Event Effect Performance of a Commercial ReRAM
38. Radiation Effects of Commercial Resistive Random Access Memories
39. Single-Event Effect Response of a Commercial ReRAM
40. Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform
41. Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits
42. Comparison of Sensitive Volumes Associated With Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
43. New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles
44. Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform
45. Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI
46. Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics
47. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
48. Vibrational relaxation of OH by oxygen atoms
49. Laser fluorescence study of the S( 1D) + CD 4 reaction: determination of the SD product internal state distribution
50. Experimental and Theoretical Studies of the Channel Phase in the Coherent Control of Molecular Processes
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