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Despite the widespread applications of high-pressure plasma in semiconductor and display industry, such as deposition and ashing process, the use of cutoff probes for diagnosing high-pressure plasma was rarely studied. In this study, we investigated a method of measuring electron density in a cutoff probe using the resonance peak in a high-pressure plasma environment. This method is validated through both electromagnetic wave simulations and experimental methodologies. Our findings reveal that the proposed method demonstrates discrepancies of less than 1.47% compared to the input plasma frequency in the results of electromagnetic wave simulations at a gas pressure of 10 mTorr, while at 2.5 Torr, it exhibited a maximum discrepancy of 13.3% when selecting resonance frequencies lower than the electron–neutral collision frequency. This discrepancy at high pressure is reduced to within 1.92% by selecting a resonance frequency higher than the electron–neutral collision frequency. Also, the feasibility of these electron density measurements has been confirmed under conditions of high gas pressure where the cutoff frequency is not measurable, as evidenced by both simulation and experimental results. Our research on the diagnostic methods in high-pressure plasmas could significantly enhance the measurement and interpretation of plasma parameters in various industrial processes. [ABSTRACT FROM AUTHOR]

In thin film deposition, Ar/SiH4 mixtures are widely used to make polysilicon (poly-Si) and hydrogenated amorphous silicon (a-SiH) layers. Despite extensive research conducted on this mixture, little research has focused on the variations in plasma properties, radicals, and ions that occur during plasma discharge in inductively coupled plasma (ICP) equipment compared to capacitive coupled plasma equipment. In this paper, we investigate the properties of the plasma generated through mathematical modeling of Ar/SiH4 inductive coupled plasma discharge by using the electron energy distribution function (EEDF) obtained by solving the Boltzmann equation. We closely examine the variation in plasma properties and the correlation of plasma variables by controlling the radio frequency power and gas pressure during the process conditions. The Boltzmann equation was computed by assuming the two-term approximation, resulting in a Druyvesteyn-like EEDF due to the high-pressure conditions. To validate the simulation model, the 2D simulation results were compared with probe measurements performed in a two-turn ICP chamber. The results demonstrated encouraging agreement with the measured data. This research not only enhances our comprehension of the discharge characteristics but also establishes a framework for optimizing the discharge conditions to enhance the process and effectively regulate external variables. [ABSTRACT FROM AUTHOR]

In this study, we examined the potential errors in plasma-density measurements using the cutoff probe method under various structural conditions, such as tip distance and length. Our studies indicate that under conditions of thin sheath thickness, the length or distance of the metal tips on the cutoff probe has a slight effect on the plasma transmission spectrum or cutoff frequency. However, under conditions with a notably thick sheath, the structure of the probe tip can cause an error of up to 2% between the measured cutoff frequency and actual plasma frequency. Consequently, for precise measurements of plasma density using the cutoff probe method, it is imperative to maintain a probe tip distance exceeding five times the sheath width and utilize a sufficiently long probe tip length. This finding is anticipated to provide essential guidelines for the design and fabrication of effective cutoff probes and enhance the accuracy of plasma-density measurements using a cutoff probe. [ABSTRACT FROM AUTHOR]

In this study, the influence of ceramic shield characteristics, including thickness and geometry, on the transmission spectrum and electron density measurements of a ceramic shield cutoff probe (CSC) was investigated to measure high-density or process plasma. Through electromagnetic simulations and circuit modeling, we examined the measurement characteristics of the CSC based on different ceramic shield geometries. When the ceramic shield is sufficiently thin, it does not affect the CSC wave transmission characteristics. However, for a thick ceramic shield, a cutoff frequency shift of up to 3% toward the lower side can occur. This shift is attributed to the electrical properties of the ceramic material, which can function as a parasitic capacitor. In addition, when fabricating a CSC, depending on the shape of the ceramic shield or the method used to couple it with the CSC body, a cutoff frequency shift can occur toward the lower side. The simulation results were validated through experiments, revealing a cutoff frequency shift toward the lower side of up to 18.0% in the simulations and up to 11.6% in the experiments. The findings of this study could assist in high-density or processing plasma measurements using cutoff probes. [ABSTRACT FROM AUTHOR]

Herein, we investigated the effect of a dielectric film on the transmission spectrum of a bar-type flat cutoff probe (BCP). By conducting electromagnetic wave simulations, we found that placing a dielectric film with a thickness of 1 mm or less on the sensor did not affect the measurement of the BCP under thin sheath condition. However, a film thickness of 1 mm or more results in a low-frequency shift in the cutoff frequency. The shift in the cutoff frequency was related not only to the film thickness, but also to the dielectric constant of the film and sheath width, which could be understood through a circuit model of the BCP. The calculated results were experimentally validated using alumina plates of various thicknesses. Consequently, our findings demonstrate that measuring the electron density on a BCP is feasible even when a dielectric film is deposited, thereby improving the accuracy of the measurement. [ABSTRACT FROM AUTHOR]

We investigated the effect of the sheath around the probe tips on the transmission spectrum of a cutoff probe using an electromagnetic simulation and a circuit model. Our results show that the width of the sheath can change the transmission spectrum, which can affect the absolute value of the electron density. In a real-world cutoff probe structure, this effect may become apparent in a low-density plasma or when a high bias voltage is applied to the plasma. The key factor is capacitance, which contains the sheath component. In the case of a low-density plasma, the change in the sheath capacitance of the sheath region contributes to the shift in the resonant frequency. For thick sheath widths, at least a 5% discrepancy can occur between the actual plasma frequency and the measurement owing to variations in the capacitance, particularly the sheath components surrounding the probe. We expect that this study will facilitate reduction in the measurement error and uncertainty in microwave cutoff probe measurements, particularly when applied to low-density plasma measurements. [ABSTRACT FROM AUTHOR]

A flat-cutoff sensor installed on the chamber wall or chuck allows precise measurement of the plasma density in real time, even with a wafer placed on the sensor. However, a few studies have been conducted on the measurement characteristics in an environment where a wafer containing a metal layer is placed on a sensor. In this study, we investigated the effect of wafers containing metal layers on flat-cutoff sensor measurements using circuit models and experiments. The metal layer in the wafer shifts the cutoff frequency up to four times higher, and the degree of shift depends on the plasma density. The relationship between the shift in the cutoff frequency and plasma density can be interpreted as the ratio of the plasma inductance to that of the metal layer from the circuit model of the flat-cutoff sensor. The calculation results were verified experimentally using wafers containing Al and Ti metal layers. As a result, measurement was found to be possible even when a wafer containing a metal layer was placed on a flat-cutoff sensor, and these results can improve the measurement accuracy of the flat-cutoff sensor for the real-time plasma measurement. [ABSTRACT FROM AUTHOR]

Real-time monitoring of plasma parameters at the wafer plane is important because it significantly affects the processing results, yield enhancement, and device integrity of plasma processing. Various plasma diagnostic sensors, including those embedded in a chamber wall and on-wafer sensors, such as flat-cutoff sensors, have been developed for plasma measurements. However, to measure the plasma density on the wafer surface in real-time when processing plasma with bias power, such as in the semiconductor etching process, one must analyze the transmission spectrum of the flat-cutoff sensor in an environment with bias power applied. In this study, the transmission-spectrum and measured plasma-density characteristics of an electrode-embedded flat-cutoff sensor are analyzed via electromagnetic simulations and experiments under applied bias power. Our findings indicate that the flat-cutoff sensor accurately measures the plasma density, which is equivalent to the input plasma density under low bias power. Conversely, under high bias power, the plasma density measured by the sensor is lower than the input plasma density. Also, a thick-sheath layer is formed owing to the high bias power, which may complicate the measurement of plasma parameters using the flat-cutoff sensor. Plasma diagnostics using a flat-cutoff sensor in thick-sheath environments can be achieved by optimizing the flat-cutoff sensor structure. Our findings can enhance the analysis of plasma parameters on-wafer surfaces in processing environments with bias power applied. [ABSTRACT FROM AUTHOR]

In the semiconductor manufacturing process, when conducting inductively coupled plasma-reactive ion etching in challenging environments, both wafers and the ceramic components comprising the chamber's interior can be influenced by plasma attack. When ceramic components are exposed to long-term plasma environments, the eroded components must be replaced. Furthermore, non-volatile reactants can form and settle on semiconductor chips, acting as contaminants and reducing semiconductor production yield. Therefore, for semiconductor processing equipment parts to be utilized, it is necessary that they exhibit minimized generation of contaminant particles and not deviate significantly from the composition of conventionally used Al2O3 and Y2O3; part must also last long in various physicochemical etching environment. Herein, we investigate the plasma etching behavior of Y2O3–Y4Al2O9 (YAM) composites with a variety of mixing ratios under different gas fraction conditions. The investigation revealed that the etching rates and changes in surface roughness for these materials were significantly less than those of Y2O3 materials subjected to both chemical and physical etching. Microstructure analysis was conducted to demonstrate the minimization of crater formation. Mechanical properties of the composite were also analyzed. The results show that the composite can be commercialized as next-generation ceramic component in semiconductor processing equipment applications. [ABSTRACT FROM AUTHOR]

The external electrical characteristics of helicon wave plasmas have been studied over a wide range of magnetic fields, radio frequency (RF) power, frequencies, and Ar gas pressures. External parameters, such as antenna voltage, current, and phase shifts, and internal parameters, such as electron density, are measured. The equivalent discharge resistance, reactance, and power transfer efficiency are calculated through these measurements. The characteristics of helicon mode is compared with inductively coupled plasma (ICP) and low mode. The power efficiency of the helicon mode is better than that of other modes. Consequently, electron density of helicon mode is much higher than that of other modes. This means the existence of a mechanism where electrons are very efficiently accelerated by the electric field of the antenna in the helicon mode. The power efficiency of helicon mode is higher at lower RF frequency and at optimum gas pressure than that of other modes. Index Terms - Electrical, helicon wave, plasma.

The characteristics of plasma produced by plane polarized m = [+ or -]1 and m = [+ or -1]2 mode helicon waves were investigated for the first time. Plane polarized m = [+ or -]1 and m = [+ or -]2 mode helicon waves were mainly excited using a Nagoya type III antenna and a quadrupole antenna, respectively. Two-dimensional cross-field measurements of ArII optical emission induced by hot electrons were made to investigate the RF power deposition. The components of the wave magnetic field measured with a magnetic probe were compared with the field profiles computed for the m = [+ or -]1 and m = [+ or -]2 modes. Two and four high intensity plasma columns were observed for the m = [+ or -]1 and m = [+ or -]2 modes, respectively. These columns were located at the regions between the antenna legs. The radial profiles of the wave magnetic field were in good agreement with computations.

Silicon nitride thin film (Si[N.sub.x]) is deposited onto the 3 inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The plasma parameters from [N.sub.2]-Si[H.sub.4] electron cyclotron resonance plasma are obtained. Radial distribution of radical atom density is determined by optical emission spectroscopy. From the comparison of the uniformities of deposited film thickness, electron density and radical atom density, it was concluded that the uniformity of film thickness is related to that of radical density rather than plasma density. The dependence of the uniformity film thickness on the waveguide mode was also examined.

The effect of radio-frequency bias on electron density in an inductively coupled plasma reactor was measured using a wave cutoff probe, over a wide range of conditions in pure Ar, pure CF4, and 50%–50% mixtures of Ar/CF4, at pressures of 0.7–4.0 Pa (5–30 mTorr), bias frequencies of 10–30 MHz, bias voltages up to 750 V, and inductive source powers of 50–300 W. Also, at selected experimental conditions, comparisons with Langmuir probe measurements were made. Two types of bias-induced changes in electron density were detected. First, at high source powers, we observed a bias-induced decrease in electron density, which had a slow time response (several minutes), a linear dependence on bias voltage, and little or no dependence on bias frequency or pressure. This decrease is a gas composition effect caused by etch or sputter products liberated from the wafer surface. Second, at low source powers, we observed a faster, bias-induced increase in electron density, which was proportional to the bias frequency and the square root of the bias voltage. This second effect was caused by absorption of bias power by electrons via stochastic heating. Simple models of each effect were derived and were shown to yield quantitative predictions in agreement with the observations. To obtain correct predictions, the effect of bias-induced electron heating cannot be considered by itself; rather, its effect on the efficiency of the inductive source must also be considered. [ABSTRACT FROM AUTHOR]