1. Rhombohedral epitaxy of cubic SiGe on trigonal c-plane sapphire
- Author
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Park, Yeonjoon, King, Glen C., and Choi, Sang H.
- Subjects
- *
HEMATITE , *EPITAXY , *SAPPHIRES , *X-ray diffraction - Abstract
Abstract: Highly [111]-oriented rhombohedral hetero-structure epitaxy of cubic SiGe semiconductor on trigonal c-plane sapphire was achieved and characterized with two new advanced X-ray diffraction methods to control the formation of primary-twin crystals. The formation of twin crystals on (111) plane was controlled with growth parameters such that the volume percentage of primary-twin crystal was reduced from 40% to 0.3% compared to the majority single crystal. The control of stacking faults can yield single-crystalline semiconductors without defects or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. In this study, about 94% of all epitaxial layers were fabricated in a single-crystalline phase. We propose the temperature-dependent alignment model of energetically favored majority single-crystalline SiGe layer on c-plane sapphire. This study shows that nearly single-crystalline cubic semiconductors can be grown in the [111] orientation on the basal (0001) planes of selected trigonal crystal substrates. [Copyright &y& Elsevier]
- Published
- 2008
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