1. Phosphorus doping of silicon by proton induced nuclear reactions
- Author
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Rafael Garcia-Molina, Konstantin M. Erokhin, Nicolay P. Kalashnikov, Isabel Abril, Interacción de Partículas Cargadas con la Materia, and Universidad de Alicante. Departamento de Física Aplicada
- Subjects
inorganic chemicals ,Nuclear reaction ,Silicon ,Materials science ,Nuclear resonant reaction ,Physics and Astronomy (miscellaneous) ,Proton ,Phosphorus ,Nuclear Theory ,Inorganic chemistry ,Radiochemistry ,technology, industry, and agriculture ,chemistry.chemical_element ,Crystallographic defect ,Phosphorus doping ,Condensed Matter::Materials Science ,Ion implantation ,chemistry ,Física Aplicada ,Physics::Accelerator Physics ,Nuclear Experiment ,Beam (structure) - Abstract
We propose a method to dope silicon with phosphorus by means of the nuclear resonant reaction 30Si(p,γ)31P, which takes place when a natural silicon target is bombarded with a few MeV proton beam. This alternative method considerably reduces the usual target damage produced by the more commonly used direct phosphorus implantation. Partial support from the Spanish DGICYT (Project Nos. PB92-0341 and PB93-1125). N.P.K. thanks the Spanish DGICYT for financial support (SAB93-0182) during his sabbatical stay in the Universidad de Murcia.
- Published
- 1995
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