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Provides information on a study which discussed the effect of radio frequency power and substrate temperature T[subs] on the optical, electrical, and structural properties of a-Si[sub1-x]C[subx]:H alloy films. Deposition of the alloys; Status of the structural disorder in the amorphous network; Efficiency of C incorporation in the alloy films; Growth of device quality thin films of the alloys.

Focuses on a study which investigated the effect of argon dilution on the structure of microcrystalline silicon deposited from silane. Experimental procedures; Results; Conclusions.

Presents Raman scattering studies on modifications in the structural disorder due to fluorine incorporation in the hydrogenated amorphous silicon-carbon alloys. Impact of an increase in carbon content on the structural disorder in unfluorinated amorphous silicon-carbon alloys; Properties of amorphous silicon-carbon alloys; Explanation for the increased bond angle distortions that cause the deterioration of the structural short range order in the alloy.

Examines the short-range order and microstructure of a set of films deposited in different plasma conditions using Raman scattering, small-angle x-ray scattering and infrared vibrational spectroscopy. Information on the plasma enhanced chemical vapor deposition technique; Method used for the powder formation in the plasma; Factors considered in the deposition rates attained and sites of powder growth in the chamber for α-Si:H films.

Focuses on a study which investigated ion-implantation induced structural transformations in hydrogenated microcrystalline silicon. Overview of the ion-implantation process; Experimental procedures; Results and discussion.

Deals with pulsed laser deposition of diamondlike hydrogenated amorphous carbon films. Evidence for the incorporation of hydrogen in the film; Characteristics of diamondlike hydrogenated amorphous carbon films; Explanation for the increased proportion of tetrahedral character in the amorphous carbon.

Thin layers of amorphous germanium vacuum deposited onto a <111> surface of crystalline silicon were irradiated with a Kr+ ion beam to produce an amorphous Si-Ge alloy at the interface. Raman scattering measurements were performed on these films both before and after the ion irradiation. The vanishing of the strong Si-Si lattice mode near 521 cm-1 and an appearance of the localized Si-Ge vibrational mode near 375 cm-1 in the Raman spectra of ion-irradiated films are correlated to the formation of an amorphous alloy of probable composition of Si0.2Ge0.8 at the interface. [ABSTRACT FROM AUTHOR]

The passivating effects of plasma polymerized thin films of thiophene on the intrinsic properties of the surface of n-GaAs (100) have been studied by means of Raman scattering, photoluminescence, and capacitance-voltage measurements. After passivation, the low-temperature photoluminescence efficiency of n-GaAs is increased three times and the surface barrier at the interface between polymer and GaAs is reduced. The surface electric field and barrier height determined by Raman scattering studies and also from capacitance-voltage measurements are shown to be lowered implying that the band bending is controlled externally. [ABSTRACT FROM AUTHOR]