234 results on '"Kubler, L."'
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2. Epitaxy relationships between Ge-islands and SiC(0 0 0 1)
3. A C 1s core level x-ray photoelectron diffraction characterization of substitutional carbon in epitaxial Si(sub 1-y)C(sub y) alloys grown on Si(111) and Si(001)
4. Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1)
5. Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(0 0 1) surfaces
6. A structural parallel between Ge- and Si-induced 4 × 4 and 3 × 3 reconstructions on SiC(0 0 0 1) drawn from comparative RHEED oscillations
7. X-ray photoelectron and Auger electron diffraction probing of Ge heteroepitaxyon Si (001) 2 x 1
8. Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption
9. Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth
10. A particular epitaxial Si1 − yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy
11. Synthesis of epitaxial Si1 − yCy alloys on Si(001) with high level of non-usual substitutional carbon incorporation
12. Determination of interface state density of PtSi/strained-Si1−xGex/Si Schottky diodes
13. MBE Si regrowth on carbon-induced Si(001)-c(4×4) reconstructions studied by RHEED
14. Ge growth mode modification on carbon-induced Si(001)-c(4×4) surfaces
15. Carbon-associated Si(001)-c(4×4) reconstruction dosed with hydrogen
16. Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4×4).
17. Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001).
18. Surface morphology evolutions during the first stages of epitaxial growth of Si on Ge(0 0 1): a RHEED study
19. Chainage Chronologique de Dossiers Application a l’Evaluation du Risque de la Defaillance d’un Stimulateur Cardiaque par Etude de la Derive des Periodes
20. Electrocardiographic Diagnosis of Myocardial Infarction and Coronary Insufficiency in the Pacemaker Patient
21. Electrocardiographic Diagnosis of Myocardial Infarction in Pacemaker Patients
22. Clinical Investigation of a Multi-Programmer
23. Cardiac Pacing in Children: A French Multicenter Study of 241 Patients
24. P415Overcoming phrenic nerve stimulation with bipolar leads - Results from the ORPHEE observational study
25. Surface morphology evolution during Si capping of Ge islands grown on Si (001)-C (4*4)
26. X-ray photoelectron and Auger electron diffraction probing of Ge heteroepitaxy on Si (001) 2×1.
27. Chainage Chronologique de Dossiers Application a l’Evaluation du Risque de la Defaillance d’un Stimulateur Cardiaque par Etude de la Derive des Periodes
28. Magnetic Susceptibility of Pure Boron
29. Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4x4)
30. Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H-SiC(0001)
31. Strain induced morphology manipulations of Si and Ge-based heterostructures on Si(001) surfaces
32. Atomic structure of carbon-induced Si(001)c(4×4) reconstruction as a Si-Si homodimer and C-Si heterodimer network
33. Biomimetic insect infochemical communication system
34. Original Ge-induced phenomena on various SiC(0 0 0 1) reconstructions
35. Si 1 − y C y surface alloys used as self-patterned templates for the growth of Ge dots
36. Automatic Adjustment of the Response Factor Approaching Physiology
37. Bidimensional intercalation of Ge between SiC(0001) and a heteroepitaxial graphite top layer
38. Ge epitaxial island growth on a graphitized C-rich 4H-SiC(0001) surface
39. Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4×4)
40. Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on6H−SiC(0001)
41. 6H- AND 4H-SiC(0001) Si SURFACE RICHNESS DOSING BY HYDROGEN ETCHING: A WAY TO REDUCE THE FORMATION TEMPERATURE OF RECONSTRUCTIONS
42. 3C-SiC Growth on 6H-SiC (0001) Substrates
43. Crystal growth of 3C–SiC polytype on 6H–SiC(0001) substrate
44. Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3 $\times $3)
45. Atomic structure of carbon-inducedSi(001)c(4×4)reconstruction as a Si-Si homodimer and C-Si heterodimer network
46. Energetics of surface and subsurface carbon incorporation in Si(100)
47. AFM and RHEED study of Ge/Si(001) quantum dot modification by Si capping
48. X-ray photoelectron characterization of6H−SiC(0001)
49. Oxidation of 6HSiC(0001)
50. X-ray spectroscopy of the oxidation of 6H-SiC(0001)
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