358 results on '"Kurishima, K"'
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2. Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition
3. Molecular mechanisms for the regulation of Nrf2-mediated cell proliferation in non-small-cell lung cancers
4. High-speed and high-reliability InP-based HBTs with a novel emitter
5. Long-term mobility of fallout 90Sr in ploughed soil, and 90Sr uptake by wheat grain
6. Increased levels of KL-6 and subsequent mortality in patients with interstitial lung diseases
7. A 128-GS/s 63-GHz-bandwidth InP-HBT-based analog-MUX module for ultra-broadband D/A conversion subsystem
8. Detail Study on Electronic Bonding States on SiN Passivation Film and Interface for Si Solar Cell Applications
9. Contact resistivity to C-doped (In)GaAsSb with Ti/Pt/Au and Pt/Ti/Pt/Au
10. Compositionally Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors with 500-GHz fT and BVCEO > 5V
11. Suppressed Self-Heating in Multi-Finger InP-Based DHBTs with Au Subcollector Fabricated on SiC Substrate by Surface-Activated Bonding
12. A 50-GHz-bandwidth InP-HBT analog-MUX module for high-symbol-rate optical communications systems
13. An over-67-GHz-bandwidth 2 Vppd linear differential amplifier with gain control in 0.25-µm InP DHBT technology
14. 75 GBd InP‐HBT MUX‐DAC module for high‐symbol‐rate optical transmission
15. InP/InGaAs double heterojunction bipolar transistors with BV CEO = 12 V and f max = 470 GHz
16. 0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100
17. A 100-Gbps low-power PRBS generator based on a half-rate-clock architecture using InP HBTs
18. High-dose concurrent chemo-proton therapy for Stage III NSCLC: preliminary results of a Phase II study
19. Generation of Dual-Carrier QPSK Signals with Mixed Electronics-Optics Modulator
20. A 60-GS/s 6-Bit DAC in 0.5-µm InP HBT Technology for Optical Communications Systems
21. Low-turn-on voltage heterojunction bipolar transistors with a C-doped InxGa1-xAs1-ySby base grown by metalorganic chemical vapor deposition
22. Interaction between Nrf2 and EGFR signaling in the proliferation of NSCLC cells.
23. Reliability study on InP/InGaAs emitter-base junction for high-speed and low-power InP HBT
24. 0.25-µm-Emitter InP HBTs with a Passivation Ledge Structure
25. Proton Beam Therapy for Patients with Stage I Non-small Cell Lung Cancer
26. Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft
27. High-Dose Radiotherapy in Patients With Stage III Non-Small Cell Lung Cancer in Practical Experience
28. Comparison of Neurone-specific Enolase and Pro-gastrin Releasing Peptide in the Prognostic Evaluation of Small Cell Lung Cancer Patients
29. High-bit-rate low-power decision circuit using InP-InGaAs HBT technology
30. Up to 80-Gbit/s operations of 1:4 demultiplexer IC with InP HBTs
31. 100 Gbit∕s clock recovery OEIC using InP∕InGaAs HPT
32. 90 Gbit∕s 0.5 W decision circuit using InP∕InGaAs double heterojunction bipolar transistors
33. 80 GHz electrical clock extraction from 80 Gbit∕s RZ optical data stream using direct optical injection locking of InP∕InGaAs HPT oscillator
34. High-speed and low-power static frequency divider and decision circuit with 0.5-µm-emitter-width InP HBTs.
35. A 60-GS/s 6-Bit DAC in 0.5-im InP HBT Technology for Optical Communications Systems.
36. 4-bit multiplexer/demultiplexer chip set for 40-gbit/s optical communication systems
37. Carbon-doped InxGa1−xAs1−ySby on InP grown by metal-organic chemical vapor deposition.
38. Reliability study on InP/InGaAs emitter-base junction for high-speed and low-power InP HBT.
39. A 150-GHz dynamic frequency divider using InP/InGaAs DHBTs
40. Over 40 Gbit∕s 16:1 multiplexer IC using InP∕InGaAs HBT technology
41. High-speed InP/InGaAs DHBTs with a thin pseudomorphic base
42. 3.48 ps ECL ring oscillator using over-300 GHz fT∕fmax InP DHBTs
43. Low-power 50 Gbit∕s InP HBT 1:4 demultiplexer IC with multiphase clock architecture
44. 3.21 ps ECL gate using InP∕InGaAs DHBT technology
45. Two-Channel InP HBT Differential Automatic-Gain-Controlled Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver.
46. Optically Injection-locked Self-oscillating HBT MMIC Optoelectronic Mixer for Bi-directional Fiber-fed Wireless Links.
47. A 60-GHz-Band Optical Injection-Locked Oscillator Using a Top/Back-Illuminated InP/InGaAs HPT.
48. Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base
49. Low-power 1:16 DEMUX and one-chip CDR with 1:4 DEMUX using InP-InGaAs heterojunction bipolar transistors
50. High-Current-Gain InAlP/AlGaAsSb/InP HBTs with a Compositionally-Graded AlGaAsSb Base Grown by MOCVD.
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