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The FCC structured CoCrFeMnNi high entropy alloy (HEA) has attracted great attention due to its excellent ductility and strain hardening ability, but the lowest yield strength is insufficient for structural applications. To achieve high strength and ductility, we developed a new strategy called harmonic structure (HS) consisting of soft coarse and hard fine grains via controlled mechanical milling time. The SEM and EBSD microscopic characterizations reveal that the formation of HS from surface to the interior of powder is due to a difference in the degree of plastic deformation. The hardness of HS HEAs increased with increasing distance from center to surface regions due to a reduction in grain size. Compared with the homogeneous HEA, the yield strength of HS HEAs increased from 370 MPa to 730 MPa and 760 MPa due to grain boundary strengthening, dislocation strengthening, and twin boundary strengthening effects. While HS HEAs exhibited enhanced strain hardening ability due to gradient structure with their mechanical incompatibility provide back stress strengthening. Furthermore, the compressive deformation behavior of homogeneous and HS HEAs was analyzed by microstructural evolution.

Historically, nanophotonics deals with a control of light at the nanoscale being closely connected with the rapid advances in plasmonics – the physics of surface plasmon polaritons supported by metal–dielectric interfaces. Properly engineered nanostructures allow the subwavelength propagation of light and its strong confinement in nanowaveguides and nanocavities, making possible the field enhancement and lasing. Spaser was suggested as a special type of nanolaser with a very small footprint that can be modulated quickly thus becoming a good candidate for on-chip optical data processing. However, recent developments in the physics of high-index dielectric nanoparticles and resonant dielectric metasurfaces allowed to advance the field of nanophotonics and introduce novel nonplasmonic nanostructures and nanolasers empowered by topology and interference effects. Here we present first some examples of experimentally realized spasers, and then discuss the recent developments in the cutting-edge high-index dielectric nanostructures employed for nonplasmonic nanolasers based on Mie resonances, anapole states, bound states in the continuum, and the physics of topological phases.

Wavelength-scale lasers provide promising applications through low power consumption requiring for optical cavities with increased quality factors. Cavity radiative losses can be suppressed strongly in the regime of optical bound states in the continuum; however, a finite size of the resonator limits the performance of bound states in the continuum as cavity modes for active nanophotonic devices. Here, we employ the concept of a supercavity mode created by merging symmetry-protected and accidental bound states in the continuum in the momentum space, and realize an efficient laser based on a finite-size cavity with a small footprint. We trace the evolution of lasing properties before and after the merging point by varying the lattice spacing, and we reveal this laser demonstrates the significantly reduced threshold, substantially increased quality factor, and shrunken far-field images. Our results provide a route for nanolasers with reduced out-of-plane losses in finite-size active nanodevices and improved lasing characteristics., Though laser action has been reported for optical bound states in the continuum (BIC) cavities with high quality factors, these BIC lasers lacked practical applicability. Here, the authors report an ultralow-threshold super-BIC laser featuring merged symmetry-protected and accidental BICs.

The fabrication of high-quality metallic powders has been attracted considerable attention in terms of producing advanced materials through additive manufacturing (AM) technology. The efficiency of...

Single-photon emitters, the basic building blocks of quantum communication and information, have been developed using atomically thin transition metal dichalcogenides (TMDCs). Although the bandgap of TMDCs was spatially engineered in artificially created defects for single-photon emitters, it remains a challenge to precisely align the emitter's dipole moment to optical cavities for the Purcell enhancement. Here, we demonstrate position- and polarization-controlled single-photon emitters in monolayer WSe2. A tensile strain of ∼0.2% was applied to monolayer WSe2 by placing it onto a dielectric rod structure with a nanosized gap. Excitons were localized in the nanogap sites, resulting in the generation of linearly polarized single-photon emission with a g(2) of ∼0.1 at 4 K. Additionally, we measured the abrupt change in polarization of single photons with respect to the nanogap size. Our robust spatial and polarization control of emission provides an efficient way to demonstrate deterministic and scalable single-photon sources by integrating with nanocavities.

High quality factor and small mode volume in nanocavities enable the demonstration of efficient nanophotonic devices with low power consumption, strong nonlinearity, and high modulation speed, due to the strong light-matter interaction. In this review, we focus on recent state-of-the-art nanocavities and their applications. We introduce single nanocavities including semiconductor nanowires, plasmonic cavities, and nanostructures based on quasi-bound states in the continuum (quasi-BIC), for laser, photovoltaic, and nonlinear applications. In addition, nanocavity arrays with unique feedback mechanisms, including BIC cavities, parity-time symmetry coupled cavities, and photonic topological cavities, are introduced for laser applications. These various cavity designs and underlying physics in single and array nanocavities are useful for the practical implementation of promising nanophotonic devices.

Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, the generation and direct integration of QEs in an aluminum nitride-based photonic integrated circuit platform is reported. For individual waveguide-integrated QEs, an off-chip count rate exceeding 6 × 104 counts per second (cps; saturation rate >8.6 × 104 cps) is measured at room temperature under continuous-wave (CW) excitation. In an unpatterned thin-film sample, antibunching with g(2)(0) ∼0.08 and photon count rates exceeding 8 × 105 cps (saturation rate >1 × 106 cps) are measured at room temperature under CW excitation. Although spin and detailed optical line width measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability., United States. Army Research Office MURI ((Ab-Initio Solid-State Quantum Materials Grant W911NF-18-1-0431), National Science Foundation (U.S.). Research Advanced by Interdisciplinary Science and Engineering (Grant CHE-1839155), Air Force Research Laboratory. RITA program ( FA8750-16-2-0141), National Research Foundation of Korea (Grants 2015R1A6A3A03020926 and 2018R1D1A1B07043390)

To allow a high quality factor (Q-factor) to a sub-wavelength dielectric resonator, quasi-bound states in the continuum (Q-BICs) have gained much interest. However, the Q-BIC resonance condition is too sensitive to the geometry of the resonator, and its practical broadband generation on a single-wafer platform has been limited. Here we present that, employing the base angle as a structural degree of freedom, the truncated nano-cone resonator supports the Q-BIC resonance with a high Q-factor of >150 over a wide wavelength range of >100 nm. We expect our approach will boost the utilization of the Q-BIC resonance for various applications requiring broadband spectral tuning.

Photolithography is the prevalent microfabrication technology. It needs to meet resolution and yield demands at a cost that makes it economically viable. However, conventional far-field photolithography has reached the diffraction limit, which imposes complex optics and short-wavelength beam source to achieve high resolution at the expense of cost efficiency. Here, we present a cost-effective near-field optical printing approach that uses metal patterns embedded in a flexible elastomer photomask with mechanical robustness. This technique generates sub-diffraction patterns that are smaller than 1/10th of the wavelength of the incoming light. It can be integrated into existing hardware and standard mercury lamp, and used for a variety of surfaces, such as curved, rough and defect surfaces. This method offers a higher resolution than common light-based printing systems, while enabling parallel-writing. We anticipate that it will be widely used in academic and industrial productions., Photolithography is an established microfabrication technique but commonly uses costly shortwavelength light sources to achieve high resolution. Here the authors use metal patterns embedded in a flexible elastomer photomask with mechanical robustness for generation of subdiffraction patterns as a cost effective near-field optical printing approach.

Purpose: The most common risk factor for fecal incontinence (FI) is obstetric injury. FI affects 1.4%–18% of adults. Most patients are unaware when they are young, when symptoms appear suddenly and worsen with aging. Autologous fat graft is widely used in cosmetic surgical field and may substitute for injectable bulky agents in treating FI. Authors have done fat graft for past several years. This article reports the effectiveness of the fat graft in treating FI and discusses satisfaction with the procedure.Methods: Fat was harvested from both lateral thighs using 10-mL Luer-loc syringe. Pure fat was extracted from harvests and mixed with fat, oil, and tumescent through refinement. Fats were injected into upper border of posterior ano-rectal ring, submucosa of anal canal and intersphincteric space. Thirty-five patients with FI were treated with this method from July 2016 to February 2017 in Busan Hangun Hospital. They were 13 male (mean age, 60.8 years) and 22 female patients (mean age, 63.3 years). The Wexner score was checked before procedure. We evaluated outcome in outpatients by asking the patients. For 19 patients we checked the Wexner score after procedure.Results: Symptom improved in 29 (82.9%), and not improved in 6 (17.1%). In 2 of 6 patients, they felt better than before procedure, although not satisfied. No improvement in 4. Mean Wexner score was 9.7 before procedure. There were no serious complications such as inflammation or fat embolism.Conclusion: Autologous fat graft can be an effective alternative treatment for FI. It is safe and easy to perform, and cost effective.

We demonstrate lasing with ultralow threshold from small-scale dielectric metasurfaces with only ~10×10 periods operating at a super-BIC regime. Engineered high-Q resonance originates from topological merging of accidental and symmetry-protected bound states in the continuum.

We demonstrate lasing action from corner states in nanophotonic topological structures. We identify multipole corner modes with distinct emission profiles via hyperspectral imaging and discern signatures of non-Hermitian radiative coupling of the topological states.

Efficient integration of a single-photon emitter with an optical waveguide is essential for quantum integrated circuits. In this study, we integrated a single-photon emitter in a hexagonal boron nitride (h-BN) flake with a Ag plasmonic waveguide and measured its optical properties at room temperature. First, we performed numerical simulations to calculate the efficiency of light coupling from the emitter to the Ag plasmonic waveguide, depending on the position and polarization of the emitter. In the experiment, we placed a Ag nanowire, which acted as the plasmonic waveguide, near the defect of the h-BN, which acted as the single-photon emitter. The position and direction of the nanowire were precisely controlled using a stamping method. Our time-resolved photoluminescence measurement showed that the single-photon emission from the h-BN flake was enhanced to almost twice the intensity as a result of the coupling with the Ag nanowire. We expect these results to pave the way for the practical implementation of on-chip nanoscale quantum plasmonic integrated circuits.

Topological photonics provides a fundamental framework for robust manipulation of light, including directional transport and localization with built-in immunity to disorder. Combined with an optical gain, active topological cavities hold special promise for a design of light-emitting devices. Most studies to date have focused on lasing at topological edges of finite systems or domain walls. Recently discovered higher-order topological phases enable strong high-quality confinement of light at the corners. Here, we demonstrate lasing action of corner states in nanophotonic topological structures. We identify several multipole corner modes with distinct emission profiles via hyperspectral imaging and discern signatures of non-Hermitian radiative coupling of leaky topological states. In addition, depending on the pump position in a large-size cavity, we generate selectively lasing from either edge or corner states within the topological bandgap. Our studies provide the direct observation of multipolar lasing and engineered collective resonances in active topological nanostructures., Higher-order photonic topological states, such as corner states, could enable robust and high-quality confinement of light to a small mode volume. Here, the authors demonstrate lasing from topological multipole corner states and investigate their emission profiles via hyperspectral imaging.

A porous Si segment in a Si nanowire (NW), when exposed to light, generates a current with a high on/off ratio. This unique feature has been recently used to demonstrate photon-triggered NW devices including transistors, logic gates, and photodetection systems. Here, we develop a reliable and simple procedure to fabricate porous Si segments in chemically synthesized Si NWs for photon-triggered current generation. To achieve this, we employ 100 nm-diameter chemical-vapor-deposition grown Si NWs that possess an n-type high doping level and extremely smooth surface. The NW regions uncovered by electron-beam resist become selectively porous through metal-assisted chemical etching, using Ag nanoparticles as a catalyst. The contact electrodes are then fabricated on both ends of such NWs, and the generated current is measured when the laser is focused on the porous Si segment. The current level is changed by controlling the power of the incident laser and bias voltage. The on/off ratio is measured up to 1.5 × 104 at a forward bias of 5 V. In addition, we investigate the porous-length-dependent responsivity of the NW device with the porous Si segment. The responsivity is observed to decrease for porous segment lengths beyond 360 nm. Furthermore, we fabricate nine porous Si segments in a single Si NW and measure the identical photon-triggered current from each porous segment; this single NW device can function as a high-resolution photodetection system. Therefore, our fabrication method to precisely control the position and length of the porous Si segments opens up new possibilities for the practical implementation of programmable logic gates and ultrasensitive photodetectors.

Electronic pacemakers can treat electrical conduction disorders in hearts; however, they are invasive, bulky, and linked to increased incidence of infection at the tissue-device interface. Thus, researchers have looked to other more biocompatible methods for cardiac pacing or resynchronization, such as femtosecond infrared light pulsing, optogenetics, and polymer-based cardiac patches integrated with metal electrodes. Here we develop a biocompatible nongenetic approach for the optical modulation of cardiac cells and tissues. We demonstrate that a polymer-silicon nanowire composite mesh can be used to convert fast moving, low-radiance optical inputs into stimulatory signals in target cardiac cells. Our method allows for the stimulation of the cultured cardiomyocytes or ex vivo heart to beat at a higher target frequency.

Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.

The development of advanced imaging tools is important for the investigation of the fundamental properties of nanostructures composed of single or multiple nanomaterials. However, complicated preparation processes and irreversible alterations of the samples to be examined are inevitable in most current imaging techniques. In this work, we developed a simple method based on polarization-resolved light scattering measurements to characterize the structural and optical properties of complex nanomaterials. In particular, we examined a single Si nanowire embedded with porous Si segments, in which the porous Si could not be easily distinguished from solid Si by scanning electron microscopy. The dark-field optical images and polarization-resolved scattering spectra showed unique optical features of porous and solid Si. In particular, the porosity, diameter, and number of porous Si segments in the single Si nanowire were identified from the scattering measurements. In addition, we performed systematic optical simulations based on the effective medium model in individual porous and solid Si nanowires. A good agreement between the simulation and measurement results enabled the estimation of the structural parameters of the nanowires, such as diameter and porosity. We believe that our method will be useful for analyzing the structural and optical properties of nanomaterials prior to using complicated and uneconomical imaging tools.

Nanolasers are key elements in the implementation of optical integrated circuits owing to their low lasing thresholds, high energy efficiencies, and high modulation speeds. With the development of semiconductor wafer growth and nanofabrication techniques, various types of wavelength-scale and subwavelength-scale nanolasers have been proposed. For example, photonic crystal lasers and plasmonic lasers based on the feedback mechanisms of the photonic bandgap and surface plasmon polaritons, respectively, have been successfully demonstrated. More recently, nanolasers employing new mechanisms of light confinement, including parity-time symmetry lasers, photonic topological insulator lasers, and bound states in the continuum lasers, have been developed. Here, the operational mechanisms, optical characterizations, and practical applications of these nanolasers based on recent research results are outlined. Their scientific and engineering challenges are also discussed.

Apparatus for fluorescence-based single photon generation includes collection optics and various setups for characterization. Managing this system often reveals complexity in such a way that adjusting in a small region changes optimal alignments of others. We suggest here a modular system, where the optimal alignment is given to each compartment and tested independently. Based on this concept, we built a system for single photon generation with fluorescence center in hexagonal boron nitride nano-flake, advantageous for scaling up the number of single mode fiber output and a high degree of stability. The system allowed for a practical use of single photon stream extended over an hour with a uniform count rate of small fluctuation levels., Comment: 5 pages, 5 figures

We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si3N4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si3N4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We bel...

Optical scattering at the nanoscale continues to lead to physical insights and various applications, including optical antennas and metamaterials and metasurfaces. The differential light-scattering cross section of a $s\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}g\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}e$ nanostructure, however, has remained elusive, despite being the fundamental parameter for characterizing scattering properties. This article presents quantitative, isolated measurements of the differential cross section and its far-field distribution for a lone gold nanorod. Simulations and modeling are in excellent agreement with the results, showing the phenomena and mechanisms that must be taken into account when engineering devices.

In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines at 4 K are three orders of magnitude broader than the transform-limited widths expected from excited state lifetime measurements. The broadening is ascribed to ultra-fast spectral diffusion. Continuing the photophysics study on several emitters at room temperature (RT), a maximum average brightness of ~427 kCounts/s is measured. Furthermore, by determining the decay rates of emitters undergoing three-level optical transitions, radiative and non-radiative lifetimes are calculated at RT. Finally, polarization measurements from 14 emitters are used to determine visibility as well as dipole orientation of defect systems within the GaN crystal. Our results underpin some of the fundamental properties of SPE in GaN both at cryogenic and RT, and define the benchmark for future work in GaN-based single-photon technologies.

© 2017 IEEE. Non-classical light sources, such as atoms and atom-like emitters play central roles in many areas of quantum information processing with applications as single photon generators, sources for nonlinearity and quantum memories. Solid-state quantum emitters have attracted growing interest due to the promise of combining remarkable optical properties with the convenience of scalability [1]. In recent years, there has been tremendous progress in developing quantum emitter systems based on crystallographic defects in wide-bandgap semiconductors. Nitrogen vacancies (NV) in diamond were among the first studied systems due to the well-defined optical transitions as well as electronic spin states that can be controlled optically. Quantum spins in diamond are among the most advanced systems in solid state for quantum based technologies such as quantum computing or quantum sensing [2]. Nevertheless, solid-state quantum emitters are not only limited to diamond and efforts to engineer single photon emitters (SPE) based on atom-like defects in scalable system have expanded beyond NV centers in diamond. Similar quantum emitters have been discovered in many other wide-bandgap host materials, including silicon carbide (SiC), III-nitride semiconductors such as gallium nitride (GaN) and aluminum nitride (AlN), and layered materials such as hexagonal boron nitride (hBN) [1]. Here, we will review our recent progress in developing and characterizing new quantum emitters in wide-bandgap semiconductors, and consider their applications as quantum light sources and sensors.

Efficient, on-demand, and robust single photon emitters (SPEs) are important to a wide varity of applications in quantum information processing [1]. Over the past decade, color centers in solid-state systems have emerged as excellent SPEs [2] and have also been shown to provide optical access to internal spin states at room and cyogenic temperatures. Color centers in diamond [3] and silicon carbide [4] are among the most intensively studied SPEs. Recently, other cost-efficient wide-bandgap materials have become attractive as potential host materials. Theoretical calculations show that aluminum nitride (AlN) with a bandgap of 6.015 eV can serve as a stable environment for well isolated SPEs with optically accessible spin states [5].