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37 results on '"LaRoche, J. R."'

6. Monolithic III-V/Si Integration

Author

Fitzgerald, Eugene A., primary, Bulsara, M. T., additional, Bai, Y., additional, Cheng, C., additional, Liu, W. K., additional, Lubyshev, D., additional, Fastenau, J. M., additional, Wu, Y., additional, Urtega, M., additional, Ha, W., additional, Bergman, J., additional, Brar, B., additional, Drazek, C., additional, Daval, N, additional, Leterte, F., additional, Hoke, W. E., additional, LaRoche, J. R., additional, Herrick, Katherine J., additional, and Kazior, T. E., additional

Published
2019
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8. Device Processing for GaN High Power Electronics

Author

Pearton, S. J., Cao, X. A., Cho, H., Lee, K. P., Monier, C., Ren, F., Dang, G., Zhang, A. P., Johnson, W., LaRoche, J. R., Gila, B. P., Abernathy, C. R., Shul, R. J., Baca, A. G., Han, J., Chyi, J.-I., and Van Hove, J. M.

Published
2000
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13. High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

Author

Kazior, T. E., primary, LaRoche, J. R., additional, Urteaga, M., additional, Bergman, J., additional, Choe, M. J., additional, Lee, K. J., additional, Seong, T., additional, Seo, M., additional, Yen, A., additional, Lubyshev, D., additional, Fastenau, J. M., additional, Liu, W. K., additional, Smith, D., additional, Clark, D., additional, Thompson, R., additional, Bulsara, M. T., additional, Fitzgerald, E. A., additional, Drazek, C., additional, and Guiot, E., additional

Published
2010
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14. Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates

Author

Hoke, W. E., primary, Kennedy, T. D., additional, LaRoche, J. R., additional, Torabi, A., additional, Bettencourt, J. P., additional, Saledas, P., additional, Lee, C. D., additional, Lyman, P. S., additional, Kazior, T. E., additional, Bulsara, M. T., additional, Fitzgerald, E. A., additional, Lubyshev, D., additional, and Liu, W. K., additional

Published
2010
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15. Monolithic III-V/Si Integration

Author

Fitzgerald, Eugene, primary, Bulsara, M. T., additional, Bai, Y., additional, Cheng, C., additional, Liu, W. K., additional, Lubyshev, Dmitri, additional, Fastenau, Joel, additional, Wu, Y., additional, Urtega, M., additional, Ha, W., additional, Bergman, J., additional, Briar, B., additional, Drazek, C., additional, Daval, Nicolas, additional, Letertre, F., additional, Hoke, W. E., additional, LaRoche, J. R., additional, Herrick, K. J., additional, and Kazior, T. E., additional

Published
2009
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16. Engineering Substrates for 3D Integration of III-V and CMOS

Author

Herrick, Katherine J., primary, Kazior, T. E., additional, LaRoche, J. R., additional, Liu, A W., additional, Lubyshev, D., additional, Fastenau, J. M., additional, Urteaga, M., additional, Ha, W., additional, Bergman, J., additional, Brar, B., additional, Bulsara, M. T., additional, Fitzgerald, Eugene A., additional, Clark, D., additional, Smith, D, additional, Thompson, R. F., additional, Daval, N, additional, and Celler, George K., additional

Published
2008
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18. Pt∕ZnO nanowire Schottky diodes

Author

Heo, Y. W., primary, Tien, L. C., additional, Norton, D. P., additional, Pearton, S. J., additional, Kang, B. S., additional, Ren, F., additional, and LaRoche, J. R., additional

Published
2004
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24. 160-A bulk GaN Schottky diode array

Author

Baik, K. H., primary, Irokawa, Y., additional, Kim, Jihyun, additional, LaRoche, J. R., additional, Ren, F., additional, Park, S. S., additional, Park, Y. J., additional, and Pearton, S. J., additional

Published
2003
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33. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit.

Author

Hoke, W. E., Chelakara, R. V., Bettencourt, J. P., Kazior, T. E., LaRoche, J. R., Kennedy, T. D., Mosca, J. J., Torabi, A., Kerr, A. J., Lee, H.-S., and Palacios, T.

Subjects
COMPLEMENTARY metal oxide semiconductors, GALLIUM nitride, TRANSISTORS, CURRENT mirrors, ELECTRON mobility, SILICON
Abstract

GaN high electron mobility transistors (HEMTs) were monolithically integrated with silicon CMOS to create a functional current mirror circuit. The integrated circuit was fabricated on 100 mm diameter modified silicon-on-insulator (SOI) wafers incorporating a resistive (111) silicon handle substrate and a lightly doped (100) silicon device layer. In a CMOS-first process, the CMOS was fabricated using the (100) device layer. Subsequently GaN was grown by plasma molecular beam epitaxy in windows on the (111) handle substrate surface without wire growth despite using gallium-rich growth conditions. Transmission lines fabricated on the GaN buffer/SOI wafer exhibited a microwave loss of less than 0.2 dB/mm up to 35 GHz. Direct current measurements on GaN HEMTs yielded a current density of 1.0 A/mm and transconductance of 270 mS/mm. At 10 GHz and a drain bias of 28 V, 1.25 mm long transistors demonstrated a small signal gain of 10.7 dB and a maximum power added efficiency of 53% with a concomitant power of 5.6 W. The silicon and GaN transistors were interconnected to form high yield test interconnect daisy chains and a monolithic current mirror circuit. The CMOS output drain current controlled the GaN transistor quiescent current and consequently the microwave gain. [ABSTRACT FROM AUTHOR]

Published
2012
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34. A spruce gene map infers ancient plant genome reshuffling and subsequent slow evolution in the gymnosperm lineage leading to extant conifers.

Author

Pavy, Nathalie, Pelgas, Betty, Laroche, J�r�me, Rigault, Philippe, Isabel, Nathalie, and Bousquet, Jean

Subjects
PHANEROGAMS, GYMNOSPERMS, PLANT genomes, BIOLOGICAL evolution, GENE mapping, PLANT genetics
Abstract

Background: Seed plants are composed of angiosperms and gymnosperms, which diverged from each other around 300 million years ago. While much light has been shed on the mechanisms and rate of genome evolution in flowering plants, such knowledge remains conspicuously meagre for the gymnosperms. Conifers are key representatives of gymnosperms and the sheer size of their genomes represents a significant challenge for characterization, sequencing and assembling. Results: To gain insight into the macro-organisation and long-term evolution of the conifer genome, we developed a genetic map involving 1,801 spruce genes. We designed a statistical approach based on kernel density estimation to analyse gene density and identified seven gene-rich isochors. Groups of co-localizing genes were also found that were transcriptionally co-regulated, indicative of functional clusters. Phylogenetic analyses of 157 gene families for which at least two duplicates were mapped on the spruce genome indicated that ancient gene duplicates shared by angiosperms and gymnosperms outnumbered conifer-specific duplicates by a ratio of eight to one. Ancient duplicates were much more translocated within and among spruce chromosomes than conifer-specific duplicates, which were mostly organised in tandem arrays. Both high synteny and collinearity were also observed between the genomes of spruce and pine, two conifers that diverged more than 100 million years ago. Conclusions: Taken together, these results indicate that much genomic evolution has occurred in the seed plant lineage before the split between gymnosperms and angiosperms, and that the pace of evolution of the genome macro-structure has been much slower in the gymnosperm lineage leading to extent conifers than that seen for the same period of time in flowering plants. This trend is largely congruent with the contrasted rates of diversification and morphological evolution observed between these two groups of seed plants. [ABSTRACT FROM AUTHOR]

Published
2012
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36. Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition.

Author

Ip, K., Heo, Y. W., Norton, D. P., Pearton, S. J., LaRoche, J. R., and Ren, F.

Subjects
PULSED laser deposition, COATING processes, CRYSTALS, ZINC oxide, ZINC compounds, SPINTRONICS, MICROELECTRONICS
Abstract

The electrical characteristics of Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition on bulk, single-crystal ZnO substrates are reported. The forward turn-on voltage of the junctions was in the range 3.6–4 V for Pt/Au metallization used for the p-Ohmic contact on Zn0.9Mg0.1O.The reverse breakdown voltage is as high as 9 V, but displays a small negative temperature coefficient of -0.1–0.2 V K-1 over the range 30–200°C. The achievement of acceptable rectification in the junctions required growth of an n-type ZnO buffer on the ZnO substrate prior to growth of the p-type, phosphorus-doped Zn0.9mg0.1O.Without this buffer, the junctions showed very high leakage current. [ABSTRACT FROM AUTHOR]

Published
2004
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37. Monolithic III-V/Si Integration

Author

Fitzgerald, Eugene A., Bulsara, M. T., Bai, Y., Cheng, C., Liu, W. K., Lubyshev, D., Fastenau, J. M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N, Leterte, F., Hoke, W. E., LaRoche, J. R., Herrick, Katherine J., and Kazior, T. E.

Abstract

We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al2O3/GaAs process for III-V MOS.

Published
2008
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