37 results on '"LaRoche, J. R."'
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2. Fabrication approaches to ZnO nanowire devices
3. Design of edge termination for GaN power Schottky diodes
4. Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric
5. Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO2
6. Monolithic III-V/Si Integration
7. The Oxide/Nitride Interface: a study for gate dielectrics and field passivation
8. Device Processing for GaN High Power Electronics
9. Device Characteristics of the GaAs/InGaAsN/GaAs P-n-P Double Heterojunction Bipolar Transistor
10. More Than Moore: GaN HEMTs and Si CMOS Get It Together
11. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
12. AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy
13. High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate
14. Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates
15. Monolithic III-V/Si Integration
16. Engineering Substrates for 3D Integration of III-V and CMOS
17. Large-scale statistical analysis of secondary xylem ESTs in pine
18. Pt∕ZnO nanowire Schottky diodes
19. Zn0.9Mg0.1O∕ZnOp–n junctions grown by pulsed-laser deposition
20. Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning
21. Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO
22. Comparison of Interface State Density Characterization Methods for SiO[sub 2]/4H-SiC MOS Diodes
23. Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO
24. 160-A bulk GaN Schottky diode array
25. Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers
26. InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
27. Thermal stability and etching characteristics of electron beam deposited SiO and SiO[sub 2]
28. Oxygen diffusion into SiO2-capped GaN during annealing
29. Study of NH 3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System
30. Nonalloyed high temperature ohmic contacts on Te-doped InP
31. The Use of Amorphous SiO and SiO[sub 2] to Passivate AuGe-Based Contact for GaAs Integrated Circuits
32. Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO2.
33. Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit.
34. A spruce gene map infers ancient plant genome reshuffling and subsequent slow evolution in the gymnosperm lineage leading to extant conifers.
35. Thermal stability and etching characteristics of electron beam deposited SiO and SiO2.
36. Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition.
37. Monolithic III-V/Si Integration
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